• Journal of Life Science
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• v.28 no.4
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• pp.488-495
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• 2018

The p53 gene plays a critical role in the transcriptional regulation of cellular response to stress, DNA damage, hypoxia, and tumor development. Keeping in mind the recently discovered manifold physiological functions of p53, its involvement in the regulation of cancer is not surprising. In about 50% of all human cancers, inactivation of p53's protein function occurs either through mutations in the gene itself or defects in the mechanisms that activate it. This disorder plays a crucial role in tumor evolution by allowing the evasion of a p53-dependent response. Many recent studies have focused on directly targeting p53 mutants by identifying selective, small molecular compounds to deplete them or to restore their tumor-suppressive function. These small molecules should effectively regulate various interactions while maintaining good drug-like properties. Among them, the discovery of the key p53-negative regulator, MDM2, has led to the design of new small molecule inhibitors that block the interaction between p53 and MDM2. Some of these small molecule compounds have now moved from proof-of-concept studies into clinical trials, with prospects for further, more personalized anti-carcinogenic medicines. Here, we review the structural and functional consequences of wild type and mutant p53 as well as the development of therapeutic agents that directly target this gene, and compounds that inhibit the interaction between it and MDM2.

• Archives of Reconstructive Microsurgery
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• v.6 no.1
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• pp.29-38
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• 1997

A peripheral nerve when approximation of the ends imparts tension at the anastomosis and with a relatively long segment defect after excision of neuroma and neurofibroma cannnot be repaired by early primary suture. The one of the optimistic reconstruction method of severed peripheral nerves is to restore tension-free continuity at the repair site putting an autogenous nerve graft into the neural gap despite of ancipating motor or sensory deficit of the donor nerve area. To overcome the deficit of the autogenous nerve graft, several other conduits supplying a metabolically active environment which is able to support axon regeneration and progression, providing protection against scar invasion, and guiding the regrowing axons to the distal stump of the nerve have been studied. An author have used ipsilateral femoral vein, ipsilateral femoral vein filled with fresh thigh muscle, and autogenous sciatic nerve for the sciatic nerve defect of around 10 mm in length to observe the regeneration pattern in rat by light and electron microscopy. The results were as follows. 1. Light microscopically regeneration pattern of nerve fibers in the autogenous graft group was more abundant than vein graft and vein filled with muscle group. 2. On ultrastructural findings, the proxial end of the graft in various groups showed similar regenerating features of the axons, myelin sheaths, and Schwann cells. The fascicular arrangement of the myelinated and unmyelinated fibers was same regardless of the type of conduits. There were more or less increasing tendency in the number and the diameter of myelinated fibers correlated with the regeneration time. 3. In the middle of the graft, myelinated nerve fibers of vein filled with muscle group were more in number and myelin sheath was thinner than in the venous graft, but the number of regenerating axons in autogenous nerve graft was superior to that in both groups of the graft. The amount of collagen fibrils and amorphous materials in the endoneurial space was increased to elapsed time. 4. There was no difference in regenerating patterns of the nerve fibers of distal end of the graft. The size and shape of the myelinated nerve fbers were more different than that of proximal and middle portion of the graft. From the above results, the degree of myelination and regenerating activity in autogenous nerve is more effective and active in other types of the graft and there were no morphological differences in either ends of the graft regardless of regeneration time.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.30 no.1
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• pp.63-70
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• 2017

In this paper, a magnetic flux leakage(MFL) based steel bar damage detection was first researched to quantify the signals from damages on the wire rope. Though many researches inspecting damages using a MFL method was proceeded until the present, the researches are at the level that diagnose whether damages are or not. This has limitation to take measures in accordance with the damage level. Thus, a MFL inspection system was modeled using a finite element analysis(FEM) program dealing with electromagnetism problems, and a steel bar specimen was adopted as a ferromagnetic object. Then, an experimental study was also carried out to verify the simulation results with a steel bar which has same damage conditions as the simulation. The MFL signals was nearly not affected by the increase of the inspection velocity, and the magnitudes of the signals are not identical according to the change of the defect width even the defects have same depth. On the basis of the analysis, the signal properties from the damages were extracted to classify the type of damages, and it could be confirmed that classification of damages using extracted signal properties is feasible.

• Journal of the Korean Society for Nondestructive Testing
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• v.32 no.4
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• pp.410-417
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• 2012

Currently domestic thermal and nuclear power plants are comprised of many type's condenser and steam generator tubes to produce the electricity of good quality. There are some methods to inspect these tubes in the event that several defects were discovered in these facilities. Among many non-destructive methods, we used guided wave to inspect the soundness of tubes, because this method is very fast to detect the defect and very simple to install the equipment and also, can inspect up to the long range at a fixed point. Also, this method has a drawback that does not detect a very small size defect. So, we made an effort to overcome this drawback through the experimentation and signal analysis according to the size and shape of the defect through the manufacture of various artificial cracks capable to generate within the small size tube in the study and we anticipate that these detect limits can be overcome along with the development of the signal processing and manufacturing technology of the sensor for the inspection.

• Journal of Chest Surgery
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• v.30 no.4
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• pp.373-377
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• 1997

Between January, 1991 and May 1995, mitral valve repair was undertaken on 32 patients under 15 years for congenital mitral regurgitation. Mean age was 24.0$\pm$26.1 months(range 3 months to 15 years), 16 patients were male and 16 patients were female associated cardiac anomalies were found in 26 patients (81%), and ventricular septal defects were noted in 18 patients(56%). In regards to pathologic findings, there were annular dilatation(n:7), leaflet prolapse(n=18), cleft leaflet(n=5) and restricted valve motion (n=2). The method of repair consisted of annuloplasty(Modif ed Devega type) in 14, repair of redundunt leaflet in 6, closure of cleft in 5, triangular resection in 2 and splitting of papillary muscle in one. There was no operative mortality and two late deaths occurred as a result of heart failure and sepsis. Tro patients required replacement of the mitral valve after 3 months and 7 months respectivehy because of recurrent mitral regurgitation. Actuarial survival was 92.5% at 46 months and actuarial freedom from reoperation was 95% at 12 months and 92.5% at 46 months. Actuarial freedom from valve repair failure was 68% at 12 months and 61.8% at 46 months. Although valve repair failure rate was high, we believe that mitral valve repair should be of rcrred to children because of low mortality and low reoperation rate.

• Journal of Chest Surgery
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• v.29 no.2
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• pp.147-152
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• 1996

his study was undertaken to assess the residual interventricular shunt following surgical closure of the isolated ventricular septal defect. From January 1989 through December 1993, 211 patients underwent surgical closure of the isolated ventricular septal defect. All patients had 2D-Echocardlo-graphic study after operation to rule out residual ventricular septal defect. There was a 9.5% incidence of a definite residual shunt. The type of ventricular septal defect, closure method of the defect and cardiopulmonary bypass time showed no significant differences between two groups. The sue of ventricular septal defect (6.3 $\pm$ 3.7mm versus 10.6 $\pm$ 5.8mm : p : 0.0034), aortic cross-clamping time(32.6 $\pm$ 15.0 minutes versus 48.5 $\pm$ 20.0 minutes, p : 0.0003), pulmonary-to-systemic pressure ratio(0.31 $\pm$ 0.22 versus 0.51 $\pm$ 0.33, p=0.019) and mean pulmonary artery pressure(20.3 $\pm$ 11.9 mmHg versus 29.1 $\pm$ 16.2 mmHg, p : 0.009) were meaningfully different between two groups. There were 9 insta ces of spontaneous closure of the residual shunts at mean 21 months of following up (ranged 1 ~43 months). In conclusion, we suggest that the size of ventricular septal defect, aortic cross-clamping time and mean pulmonary artery pressure may play an important role in occurance of residual ventricular septal defect.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.347-351
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• 2003

II-Ⅵ ZnO compound semiconductor thin films were grown on $\alpha$-Al$_2$O$_3$(0001) single crystal substrate by radical beam assisted molecular beam epitaxy and the optical properties were investigated. Zn(6N) was evaporated using Knudsen cell and O radical was assisted at the partial pressure of 1$\times$10$^{4}$ Torr and radical beam source of 250-450 W RF power. In $\theta$-2$\theta$ x-ray diffraction analysis, ZnO thin film with 500 nm thickness showed only ZnO(0002)and ZnO(0004) peaks is believed to be well grown along c-axis orientation. Photoluminescence (PL) measurement using He-Cd ($\lambda$=325 nm) laser is obtained in the temperature range of 9 K-300 K. At 9 K and 300 K, only near band edge (NBE) is observed and the FWHM's of PL peak of the ZnO deposited at 450 RF power are 45 meV and 145 meV respectively. From no observation of any weak deep level peak even at room temperature PL, the ZnO grains are regarded to contain very low defect density and impurity to cause the deep-level defects. The peak position of free exciton showed slightly red-shift as temperature was increased, and from this result the binding energy of free exciton can be experimentally determined as much as $58\pm$0.5 meV, which is very closed to that of ZnO bulk. By van der Pauw 4-point probe measurement, the grown ZnO is proved to be n-type with the electron concentration($n_{e}$ ) $1.69$\times$10^{18}$$cm^3$, mobility($\mu$) $-12.3\textrm{cm}^2$/Vㆍs, and resistivity($\rho$) 0.30 $\Omega$$\cdot$cm.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.102-102
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• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

• Journal of Periodontal and Implant Science
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• v.38 no.sup2
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• pp.373-384
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• 2008

Purpose: The aim of this study is to compare the healing response of various Hydroxyapatite(HA) coated dental implants by Ion-Beam Assisted Deposition(IBAD) placed in the surgically created circumferential gap in dogs. Materials and methods: In four mongrel dogs, all mandibular premolars and the first molar were extracted. After an 8 weeks healing period, six submerged type implants were placed and the circumferential cylindrical 2mm coronal defects around the implants were made surgically with customized step drills. Groups were divided into six groups : anodized surface, anodized surface with 150nm HA and heat treatment, anodized surface with 300nm HA and heat treatment, anodized surface with 150nm HA and no heat treatment, and anodized surface with 150nm HA, heat treatment and bone graft, anodized surface with bone graft. The dogs were sacrificed following 12 weeks healing period. Specimens were analyzed histologically and histomorphometrically. Results: During the healing period, healing was uneventful and implants were well maintained. Anodized surface with HA coating and $430^{\circ}C$ heat treatment showed an improved regenerative characteristics. Most of the gaps were filled with newly regenerated bone. The implant surface was covered with bone layer as base for intensive bone formation and remodeling. In case that graft the alloplastic material to the gaps, most of the coronal gaps were filled with newly formed bone and remaining graft particles. The bone-implant contact and bone density parameters showed similar results with the histological findings. The bone graft group presented the best bone-implant contact value which had statistical significance. Conclusion: Within the scope of this study, nano-scale HA coated dental implants appeared to have significant effect on the development of new bone formation. And additional bone graft is an effective method in overcoming the gaps around the implants.

• Journal of the Korean Chemical Society
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• v.30 no.1
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• pp.27-32
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• 1986

Electrical conductivities of NiO-$Y_2O_3$ systems containing 0.8, 1.6, and 3.2 mol% NiO have been measured in the temperature range of 400 to 1100$^{\circ}$C at $PO_2$'s of 1 ${\times}10^{-5}$ to 2 ${\times}10^{-1}$ atm. Plots of $log\sigma$ vs 1/T at constant $PO_2$'s are found to be linear with an inflection at temperature around 650$^{\circ}$C. The slopes are steeper in the high temperature region above 650$^{\circ}$C than in the low temperature region below 650$^{\circ}$C. The average activation energies are 41.8kcal/mol in the high temperature region and 12.5kcal/mol in the low temperature region. $PO_2$'s dependence value, 1/n, is 1/5.1~1/5.4 in the high temperature region and 1/5.9~1/6.2 in the low temperature region. The NiO-$Y_2O_3$ systems are found to be an electronic p-type semiconductor. The predominant defects in the systems are believed to be triply ionized yttrium vacancy in the high temperature region and doubly ionized oxygen interstitial in the low temperature region. Ionic contribution to the total conductivity is found from ${\sigma}^{\propto}PO_2$ in the temperatures below 650$^{\circ}$C.