• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.421-422
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• 2013

Recently, ZnO has received attentionbecause of its applications in optoelectronics and spintronics. In order to investigate deep level defects in ZnO, we used N-doped ZnO with various of the N-doping concentration. which are reference samples (undoped ZnO), 27%, 49%, and 88%-doped ZnO. Photoinduced current transient spectroscopy (PICTS) measurement was carried out to find deep level traps in high resistive ZnO:N. In reference ZnO sample, a deep trap was found to located at 0.31 (as denoted as the CO trap) eV below conduction band edge. And the CN1 and CN2 traps were located at 0.09, at 0.17 eV below conduction band edge, respectively. In the case of both annealed samples at 200 and $300^{\circ}C$, the defect density of the CO trap increases and then decreases with an increase of N-doping concentration. On the other hands, the density of CN traps has little change according to an increase of N-doping concentration in the annealed sample at $300^{\circ}C$. According to the result of PICTS measurement for different N-doping concentration, we suggest that the CO trap could be controled by N-doping and the CN traps be stabilized by thermal annealing at $300^{\circ}C$.

• Journal of Periodontal and Implant Science
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• v.48 no.5
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• pp.326-333
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• 2018

Purpose: The present study investigated the outcomes of a newly-developed, simple, and practical nonsurgical treatment modality suitable for most forms of intrabony defects around failing dental implants using intrasulcular delivery of chlorhexidine solution and minocycline hydrochloride (HCl). Methods: Forty-five dental implants in 20 patients diagnosed with peri-implantitis were included. At baseline and the study endpoint, the probing pocket depth (PPD), clinical attachment level (CAL), and the presence of bleeding on probing (BOP) at 6 sites around each implant were recorded. The radiographic osseous defect morphology at the mesial or distal proximal aspect of each implant was classified as 1) narrow or wide and 2) shallow or deep. For a comparative analysis of bone changes according to the defect morphology, the distance from the implant shoulder to the most coronal bone-to-implant contact point (DIB) at the mesial and distal aspects of each implant was measured at baseline and the endpoint. Patients were scheduled to visit the clinic every 2-4 weeks for intrasulcular irrigation of chlorhexidine and delivery of minocycline HCl. Results: We observed statistically significant decreases in PPD, CAL, and BOP after treatment. At the endpoint, bone levels increased in all defects, regardless of the osseous morphology of the intrabony defect. The mean DIB change in deep defects was significantly greater than that in shallow defects. Although the mean bone gain in narrow defects was greater than in wide defects, the difference was not statistically significant. Conclusions: We propose that significant and sustainable improvements in both clinical and radiographic parameters can be expected when intrabony defects around dental implants are managed through a simple nonsurgical approach involving combined intrasulcular chlorhexidine irrigation and local delivery of minocycline HCl.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.09a
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• pp.52-59
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• 2001

The photoluminescence and the photo-current from p-type GaN films were investigated on both room- and low-temperatures for various Mg doping concentrations. At a low Mg doping level, there exists a photoluminescence center of the donor and the acceptor pair transition of the 3.28-eV band. This center is correlated with the defects for a shallow donor of the VGa and for an acceptor of MgGa. The acceptor level shows the binding energy of 0.2-0.25 eV, which was observed by the photon energy of the photo-current signal of 3.02-3.31 eV. At a high Mg doping level, there is a photoluminescence center of a deep donor and an acceptor pair transition of the 2.76-eV blue band. This center is attributed to the defect structures of MgGa-VN for the deep donor and MgGa for the acceptor. For low. doped samples, thermal annealing provides an additional photo-current signal for an unoccupied deep acceptor levels of 0.87-1.35 eV above valence band, indicating the p-type activation.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.5
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• pp.63-68
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• 1999

In this paper, the correlation between the growth mechanism and the optical property in GaN films grown by low-pressure metalorganic chemical vapor deposition was characterized using room temperature cathodoluminescence spectroscopy. An intense near band-edge emission, 364nm, and deep-level emission, 550nm, were observed. The intensity of 364nm peak was increased with increasing the beam current. Also the peak position of 364nm emission was red-shifted and the intensity of 550nm peak was increased with increasing the accelerating voltage. It shows that the deep-level emission is strongly associated with crystalline defects in the GaN at early stage. The relationship between the microstructure and the deep level emission observed by scanning electron microscope images and cathodoluminescence spectra was carefully analyzed.

• Journal of Korean Society of Industrial and Systems Engineering
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• v.47 no.1
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• pp.9-19
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• 2024

Deep learning-based computer vision anomaly detection algorithms are widely utilized in various fields. Especially in the manufacturing industry, the difficulty in collecting abnormal data compared to normal data, and the challenge of defining all potential abnormalities in advance, have led to an increasing demand for unsupervised learning methods that rely on normal data. In this study, we conducted a comparative analysis of deep learning-based unsupervised learning algorithms that define and detect abnormalities that can occur when transparent contact lenses are immersed in liquid solution. We validated and applied the unsupervised learning algorithms used in this study to the existing anomaly detection benchmark dataset, MvTecAD. The existing anomaly detection benchmark dataset primarily consists of solid objects, whereas in our study, we compared unsupervised learning-based algorithms in experiments judging the shape and presence of lenses submerged in liquid. Among the algorithms analyzed, EfficientAD showed an AUROC and F1-score of 0.97 in image-level tests. However, the F1-score decreased to 0.18 in pixel-level tests, making it challenging to determine the locations where abnormalities occurred. Despite this, EfficientAD demonstrated excellent performance in image-level tests classifying normal and abnormal instances, suggesting that with the collection and training of large-scale data in real industrial settings, it is expected to exhibit even better performance.

• Current Photovoltaic Research
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• v.1 no.1
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• pp.38-43
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• 2013

$Cu(In,Ga)_3Se_5$ is a candidate material for the top cell of $Cu(In,Ga)Se_2$ tandem cells. This phase is often found at the surface of the $Cu(In,Ga)Se_2$ film during $Cu(In,Ga)Se_2$ cell fabrication, and plays a positive role in $Cu(In,Ga)Se_2$ cell performance. However, the exact properties of the $Cu(In,Ga)_3Se_5$ film have not been extensively studied yet. In this work, $Cu(In,Ga)_3Se_5$ films were fabricated on Mo-coated soda-lime glass substrates by a three-stage co-evaporation process. The Cu content in the film was controlled by varying the deposition time of each stage. X-ray diffraction and Raman spectroscopy analyses showed that, even though the stoichiometric Cu/(In+Ga) ratio is 0.25, $Cu(In,Ga)_3Se_5$ is easily formed in a wide range of Cu content as long as the Cu/(In+Ga) ratio is held below 0.5. The optical band gap of $Cu_{0.3}(In_{0.65}Ga_{0.35})_3Se_5$ composition was found to be 1.35eV. As the Cu/(In+Ga) ratio was decreased further below 0.5, the grain size became smaller and the band gap increased. Unlike the $Cu(In,Ga)Se_2$ solar cell, an external supply of Na with $Na_2S$ deposition further increased the cell efficiency of the $Cu(In,Ga)_3Se_5$ solar cell, indicating that more Na is necessary, in addition to the Na supply from the soda lime glass, to suppress deep level defects in the $Cu(In,Ga)_3Se_5$ film. The cell efficiency of $CdS/Cu(In,Ga)_3Se_5$ was improved from 8.8 to 11.2% by incorporating Na with $Na_2S$ deposition on the CIGS film. The fill factor was significantly improved by the Na incorporation, due to a decrease of deep-level defects.

• Journal of Information Processing Systems
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• v.19 no.6
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• pp.745-755
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• 2023

The wire rope is an indispensable production machinery in coal mines. It is the main force-bearing equipment of the underground traction system. Accurate detection of wire rope defects and positions exerts an exceedingly crucial role in safe production. The existing defect detection solutions exhibit some deficiencies pertaining to the flexibility, accuracy and real-time performance of wire rope defect detection. To solve the aforementioned problems, this study utilizes the camera to sample the wire rope before the well entry, and proposes an object based on YOLOv5. The surface small-defect detection model realizes the accurate detection of small defects outside the wire rope. The transfer learning method is also introduced to enhance the model accuracy of small sample training. Herein, the enhanced YOLOv5 algorithm effectively enhances the accuracy of target detection and solves the defect detection problem of wire rope utilized in mine, and somewhat avoids accidents occasioned by wire rope damage. After a large number of experiments, it is revealed that in the task of wire rope defect detection, the average correctness rate and the average accuracy rate of the model are significantly enhanced with those before the modification, and that the detection speed can be maintained at a real-time level.

• Nuclear Engineering and Technology
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• v.55 no.1
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• pp.209-214
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• 2023

The effect of thermal annealing on defect recovery of in-core neutron-irradiated 4H-SiC was investigated. Au/SiC Schottky diodes were manufactured using a 4H-SiC epitaxial wafer that was neutron-irradiated at the HANARO research reactor. The electrical characteristics of their epitaxial layers were analyzed under various conditions, including different neutron fluences (1.3 × 10¹⁷ and 2.7 × 10¹⁷ neutrons/cm²) and annealing times (up to 2 h at 1700 ℃). Capacity-voltage measurements showed high carrier compensation in the neutron-irradiated samples and a recovery tendency that increased with annealing time. The carrier density could be recovered up to 77% of the bare sample. Deep-level-transient spectroscopy revealed intrinsic defects of 4H-SiC with energy levels 0.47 and 0.68 eV below the conduction-band edge, which were significantly increased by in-core neutron irradiation. A previously unknown defect with a high electron-capture cross-section was discovered at 0.36 eV below the conduction-band edge. All defect concentrations decreased with 1700 ℃ annealing; the decrease was faster when the defect level was shallow.

• Current Photovoltaic Research
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• v.2 no.1
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• pp.28-35
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• 2014

High-efficiency in $Cu(In,Ga)Se_2$ (CIGS) solar cells were usually achieved on soda-lime glass substrates due to Na incorporation that reduces deep-level defects. However, this supply of sodium from sodalime glass to CIGS through Mo back electrode could be limited at low deposition temperature. Na content could be more precisely controlled by supplying Na from known amount of an outside source. For the purpose, an $Na_2S$ layer was deposited on Mo electrode prior to CIGS film deposition and supplied to CIGS during CIGS film. With the $Na_2S$ underlayer a more uniform component distribution was possible at $350^{\circ}C$ and efficiency was improved compared to the cell without $Na_2S$ layer. With more precise control of bulk and surface component profile, CIGS film can be deposited at low temperature and could be useful for flexible CIGS solar cells.

• Journal of IKEEE
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• v.27 no.3
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• pp.288-295
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• 2023

In this work, we investigated the role of oxygen annealing on the performance of Metal-Semiconductor-Metal (MSM) UV photodetector (PD) fabricated by radio frequency (RF)-sputtered Ga₂O₃ films on SiC substrates. Oxygen-nnealed Ga₂O₃ films displayed a notable increase in photocurrent and a faster decay time, indicating a decrease in persistent photoconductivity. This improvement is attributed to the reduction of oxygen vacancies and variation of defects by oxygen post-annealing. Our findings provide valuable insights into enhancing PD performance through oxygen annealing.