• Korean Journal of Veterinary Research
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• v.32 no.2
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• pp.157-164
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• 1992

Changes in the both inward current and conductance of membrane by the fertilization were observed using the one microelectrode voltage clamp(or switch clamp) technique. Unfertilized eggs and both 1- and 2-cell stage eggs after fertilization were donated from the superovulated mouse (ICR, more than 6 weeks old) treated with PMSG(pregnant mare serum gonadotropin, Sigma) and HCG(human chorionic gonadotropin, Sigma) and naturally mated ones, respectively in this experiment. Membrane potential was held at -90mV and the voltage step was applied from -80mV to 50mV with interval of 10mV or 20mV for 300ms. since both of amplitudes and time courses in the membrane currents were various according to the states of cells and clamping condition, results were presented by their $averages{\pm}SEM$(standard mean error)and ratios or percentages. Inward currents began to appear in response to the step depolarization from -60mV and reached its maximum at -50mV. However, since the potential was not clamped evenly during the voltage step, current-voltage(I-V) relationship might be positively shifted 10 or 20mV. From the steady-state currents plotted in the I-V curve, outward rectification was markedly observed. Peak inward currents$(i_{in})$ at -50mV were $-0.62{\pm}0.23nA$(n=4),$-0.52{\pm}0.25nA$(n=5) and $-0.37{\pm}0.25nA$(n=6), in the 1-cell stage, 2-cell stage fertilized eggs and in the unfertilized eggs, respectively. Pure inward current (difference between steady-state and peak, $i_{in. pure}$) were $-1.01{\pm}0.23nA$, $-0.69{\pm}0.43nA$ and $-0.68{\pm}0.29nA$, respectively in the 1-cell stage fertilized eggs, unfertilized eggs and 2-cell stage fertilized eggs. These results suggested that the outward current in fertilized eggs of 2-cell stage was more increased than those in the unfertilized eggs. Pure inward currents in the all stages of eggs showed a similar fashion in the I-V relationship from -50mV to 50mV and reversal potential at 50mV. Time constant of inactivation$({\tau})$ in the inward current was decreased as the membrane potential was depolarized in the unfertilized and 2-cell stage eggs but in the 1-cell stage eggs t was not likely to be affected significantly. Slope conductances were 14.2nS, 8.9n5 and 7.7nS in the 1-cell, 2-cell stage fertilized eggs and the unfertilized eggs, respectively. Membranes between two cells within a zona pellucida seem to be electrical-connected in the 2-cell stage eggs from the observation made in the analysis for the electronic spread and decay to the current stimuli. Both of inward current and membrane conductance were increased after fertilization in the mouse eggs. Inward current seems to be carried by the same ion or through the same channels up to the 2-cell stage and ion that carried inward current was thought to play important function after fertilization in the mouse eggs.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.12
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• pp.87-94
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• 2008

This parer presents the soil ionization phenomena and parameters associated to characterize the transient performances of grounding system under lightning impulse Currents. Ionization properties in occurring some soil media were experimentally investigated. The cylindrical test cell was employed in order to facilitate the analysis of soil breakdown field intensity and ionized radius. The soil breakdown field intensity, dependence of impedance on the amplitude of impulse current, V-I curves and transient impedances were discussed based on the voltage and current oscillograms. It was found that the ionization process and dynamic behaviors were strongly dependent on the types of soil and two current peaks were not observed in highly water-saturated soils. The results presented in this paper will provide useful information on the improvement of transient performance of a grounding system subjected to lightning impulse Current considering the soil ionization.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.9
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• pp.62-68
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• 2008

This paper describes the electrical characteristics of ZnO surge arresters associated with the variation of surrounding conditions. To investigate the deterioration behaviors of ZnO surge arresters due to lightning surges, 8/20[${\mu}s$], 2.5[kA] impulse currents were injected to the ZnO surge arrester under test. The leakage currents of ZnO surge arrester subject to power frequency AC voltage were measured in different surrounding temperature and wet conditions. As a result, it was found that the leakage current is increased and its asymmetry is pronounced as the number of injection of the impulse current and the ambient temperature increase. Also, in the wet test the outside leakage current flowing through the housing surface of the ZnO surge arrester is much larger than the intrinsic leakage current of ZnO surge arrester element. The results obtained in this work can be a lied as factors of improving the reliability and performance of monitoring system for surge arresters.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.4
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• pp.748-757
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• 2007

This paper is intended to solve the technical problem that fails in large-capacity induction motor starting due to serious voltage drop during starting period. One induction motor that is established already can reach in steady-state using reactor starting method but the voltage magnitude of PCC (point of common coupling) has dropped down a little. When the same capacity induction motor is installed additionally in the PCC, where the existing induction motor is operating, voltage drop becomes more serious by starting of additional induction motor. As a result, the additional induction motor fails in starting. Therefore, voltage compensation method is proposed so that all of two induction motors can be started completely. First, modeling technique is described in order to implement starting characteristics of large induction motor. And then, this paper proposes strategic starting scheme by proper voltage compensation that use no-load transformer tap control (NLTC) and step voltage regulator (SVR) for starting of two large induction motors successfully and improving the feeding network voltage profile during the starting period. The induction motor discussed in this paper is the pumped induction motor of 2500kVA capacity that is operating by KOWACO (Korea Water Resources Corporation). Modeling and simulation is conducted using PSCAD/EMTDC software.

• The Korean Journal of Physiology and Pharmacology
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• v.21 no.2
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• pp.225-232
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• 2017

We demonstrated the effect of nortriptyline, a tricyclic antidepressant drug and serotonin reuptake inhibitor, on voltage-dependent $K^+$ (Kv) channels in freshly isolated rabbit coronary arterial smooth muscle cells using a whole-cell patch clamp technique. Nortriptyline inhibited Kv currents in a concentration-dependent manner, with an apparent $IC_{50}$ value of $2.86{\pm}0.52{\mu}M$ and a Hill coefficient of $0.77{\pm}0.1$. Although application of nortriptyline did not change the activation curve, nortriptyline shifted the inactivation current toward a more negative potential. Application of train pulses (1 or 2 Hz) did not change the nortriptyline-induced Kv channel inhibition, suggesting that the effects of nortiprtyline were not use-dependent. Preincubation with the Kv1.5 and Kv2.1/2.2 inhibitors, DPO-1 and guangxitoxin did not affect nortriptyline inhibition of Kv channels. From these results, we concluded that nortriptyline inhibited Kv channels in a concentration-dependent and state-independent manner independently of serotonin reuptake.

• Journal of the Korean institute of surface engineering
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• v.51 no.6
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• pp.393-399
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• 2018

Formation behavior of aluminum anodic oxide (AAO) films on Al6061 alloy was studied in view of thickness, morphology and defects in the anodic films in 20 vol.% sulfuric acid solution at a constant current density of $40mA/cm^2$, using voltage-time curve, observation of anodized specimen colors and surface and cross-sectional morphologies of anodic films with anodization time. With increasing anodizing time, voltage for film formation increased exponentially after about 12 min and its increasing rate decreased after 25 min, followed by a rapid decrease of the voltage after about 28 min. Surface color of anodized specimen became darker with increasing anodizing time up to about 20 min, while it appeared to be brighter with increasing anodizing time after 20 min. The darkened and brightened surfaces with anodizing time are attributed to an increase in thickness of porous anodic oxide film and a chemical damage of the films due to heat generated by increased resistance of the film, respectively. Cross-sectional observation of AAO films revealed the formation of defects of crack shape at the metal/oxide interface after 15 min which prevents the growth of AAO films. Width and length of the crack-like defect increased with anodizing time up to 25 min of anodizing, and finally the outer part of AAO films was partly dissolved or detached after 30 min of anodizing, resulting in non-uniform surface structures of the AAO films.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• Journal of Sensor Science and Technology
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• v.7 no.1
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• pp.67-72
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• 1998

The crystallized CuPc and PbTe films are formed by thermal evaporation and pulsed ArF excimer laser ablation. Structural and electrical properties of thin film is observed by XRD and current-voltage(I-V) curves. From XRD analysis, both PbTe and CuPc thin films show a-axis oriented structure. For the measurement of photovoltaic effect, the transverse current-voltage curve of CuPc/Si, PbTe/Si and PbTe/CuPc/Si junctions have been analyzed in the dark and under illumination. The PbTe/CuPc/Si junction exthibits a strong photovoltaic characteristics with short circuit current($J_{sc}$) of $25.46\;mA/cm^{2}$ and open-circuit voltage($V_{oc}$) of 170 mV. Quantum efficiency and power conversion efficiency are calculated to be 15.4% and $3.46{\times}10^{-2}$, respectively. Based on the results of QE and ${\eta}$, the photocurrent process of PbTe/CuPc/Si junction can be explained as following three effective steps; photocarrier generation in the CuPc layer, carrier separation at PbTe/CuPc interface, and finally a transportation of electrons through the PbTe layer.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.9
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• pp.436-443
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• 2017

Recently, the development of new energy technologies has become a hot topic due to problems,such as global warming. Unlike renewable energy technologies, such as solar energy generation, solar power, and wind power, which are optimized to achieve medium or above output power, the output power of energy harvesting technology is very small and has not received much attention. On the other hand, as the mobile industry has been revitalized recently, the utility of energy harvesting technology has been reevaluated. In addition, the technology of tracking the maximum power point has been actively researched. This paper proposes a new MPPT(Maximum Power Point Tracking) control method for a TEM(thermoelectric module) for load resistance. The V-I curve characteristics and internal resistance of TEM were analyzed and the conventional MPPT control methods were compared. The P&O(Perturbation and Observation) control method is more accurate, but it is less economical than the CV (Constant Voltage)control method because it usestwo sensors to measure the voltage and current source. The CV control method is superior to the P&O control method in economic aspects because it uses only one voltage sensor but the MPP is not matched precisely. In this paper, a method wasdesigned to track the MPP of TEM combining the advantages of the two control method. The proposed MPPT control method wasverified by PSIM simulation and H/W implementation.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.741-742
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• 2006

This paper deals with an efficient superconducting joint method between 2G high superconducting(HTS) wire, YBCO coated conductor(CC). Recently CC is one of the most promising superconducting wire due to high n-value and critical current independency from external magnetic field. It is expected to be used many superconducting application such as fault current limiter, persistent current system and cable etc. In most HTS applications, superconducting magnet is used, and it is necessary to joint between superconducting wire to fabricate superconducting magnet system. A CC tape used in this research consists of copper stabilizer, silver layer, YBCO layer, buffer and substrate. Direct joint using soldering method was inefficient due to resistance of copper, then copper lamination is removed by chemical etching method to reduce resistance between CC tapes. Jointed tapes were fabricated and tested. Transport current through jointed area and induced voltage were measured to characterize the I-V curve. Resistance between CC wire using chemical etching was compared with resistance of direct jointed tapes using soldering method in this paper.