• Proceedings of the KSR Conference
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• 1998.11a
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• pp.296-301
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• 1998

Pentagraphs are used to supply electric power to train via trolley lines. The higher train speed is, the higher voltage and current levels 8u. Since electric power is supplied with slinding contact, localized abrasion is inevitable. It is difficult and dangerous to measure their shape manually. Measurement system of pentagraph slider with ultrasonic processing has been reported. In this paper, measurement system with image processing is proposed. The system consists of CCD cameras, image grabber board, and PC operated on Windows'95. Image processing algorithms are presented and some results are illustrated.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.6
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• pp.44-51
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• 1999

The electrical conduction mechanism of high dielectric $(Ba,Sr)TiO_3$ (BST) thin film capacitor, which is the promising cell capacitor for high density DRAM, was investigated in low field region (<0.2MV/cm). It is known that the current in the low field region consists of dielectric relaxation current and leakage current. The current-time (I-t) measurement technique under the constant voltage was used for extracting successfully each current component. The conduction mechanism of the BST capacitor was deduced from the dependency of the current on the measurement temperature, strength of electric field, the polarity of applied electric field and post annealing process. From these results, it was suggested that the dielectric relaxation current and the leakage current are originated from the redistribution of internally trapped electron by hopping process and Pool-Frenkel conduction mechanism, respectively. It was also concluded that traps causing these two current components are due to oxygen vacancies within the BST film.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.523-523
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• 2012

As the wafer geometric requirements continuously complicated and minutes in tens of nanometers, the expectation of real-time add-on sensors for in-situ plasma process monitoring is rapidly increasing. Various industry applications, utilizing plasma impedance monitor (PIM) and optical emission spectroscopy (OES), on etch end point detection, etch chemistry investigation, health monitoring, fault detection and classification, and advanced process control are good examples. However, process monitoring in semiconductor manufacturing industry requires non-invasiveness. The hypothesis behind the optical monitoring of plasma induced ion current is for the monitoring of plasma induced charging damage in non-invasive optical way. In plasma dielectric via etching, the bombardment of reactive ions on exposed conductor patterns may induce electrical current. Induced electrical charge can further flow down to device level, and accumulated charges in the consecutive plasma processes during back-end metallization can create plasma induced charging damage to shift the threshold voltage of device. As a preliminary research for the hypothesis, we performed two phases experiment to measure the plasma induced current in etch environmental condition. We fabricated electrical test circuits to convert induced current to flickering frequency of LED output, and the flickering frequency was measured by high speed optical plasma monitoring system (OPMS) in 10 kHz. Current-frequency calibration was done in offline by applying stepwise current increase while LED flickering was measured. Once the performance of the test circuits was evaluated, a metal pad for collecting ion bombardment during plasma etch condition was placed inside etch chamber, and the LED output frequency was measured in real-time. It was successful to acquire high speed optical emission data acquisition in 10 kHz. Offline measurement with the test circuitry was satisfactory, and we are continuously investigating the potential of real-time in-situ plasma induce current measurement via OPMS.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.10a
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• pp.889-893
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• 2015

In this work, the characteristics of GIDL current in nanowire GAA MOSFET with different channel width and hot carrier stress. When the gate length is fixed as a 250nm the GIDL current with different channel width of 10nm, 50nm, 80nm, and 130nm have been measured and analyzed. From the measurement, the GIDL is increased as the channel width decreaes. However, the derive current is increased as the channel width increases. From measurement results after hot carrier stress, the variation of GIDL current is increased with decreasing channel width. Finally, the reasons for the increase of GIDL current with decreasing channel width and r device. according to hot carrier stress GIDL's variation shows big change when width and the increase of GIDL current after hot carrier stress are confirmed through the device simulation.

• Progress in Superconductivity and Cryogenics
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• v.19 no.1
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• pp.26-29
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• 2017

We studied the distribution of the current density and its magnetic-field dependence in GdBCO coated conductors with AC bias currents using low temperature scanning Hall probe microscopy. We selectively measured magnetic field profiles from AC signal obtained by Lock-in technique and calculated current distributions by inversion calculation. In order to confirm the AC measurement results, we applied DC current corresponding to RMS value of AC current and compared distribution of AC and DC transport current. We carried out the same measurements at various external DC magnetic fields, and investigated field dependence of AC current distribution. We notice that the AC current distribution unaffected by external magnetic fields and preserved their own path on the contrary to DC current.

• Progress in Superconductivity and Cryogenics
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• v.1 no.1
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• pp.33-37
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• 1999

The fast current and field ramp-up experiment was done with the superconducting magnet that is made of three non-insulated strand CICC (Cable-In- Conduit Conductor). The shunt the unbalanced current magnet enabled the unbalanced current measurement which is believed to be associated with the loop current. To explain the generation of the loop current during the current ramp up. the steady-state three strand loop current model was proposed. This model gives an explanation for the relation between the loop current and the twist geometry of the strands. According to this model. The twisr geometry and the surface contact resistance of the strand has significant influence on the generation of the loop current especially in the large superconducting magnet.

• Smart Structures and Systems
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• v.30 no.3
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• pp.287-301
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• 2022

The machine-vision based structural displacement measurement methods are widely used due to its flexible deployment and non-contact measurement characteristics. The accuracy of vision measurement is directly related to the image resolution. In the field of computer vision, super-resolution reconstruction is an emerging method to improve image resolution. Particularly, the deep-learning based image super-resolution methods have shown great potential for improving image resolution and thus the machine-vision based measurement. In this article, we firstly review the latest progress of several deep learning based super-resolution models, together with the public benchmark datasets and the performance evaluation index. Secondly, we construct a binocular visual measurement platform to measure the distances of the adjacent corners on a chessboard that is universally used as a target when measuring the structure displacement via machine-vision based approaches. And then, several typical deep learning based super resolution algorithms are employed to improve the visual measurement performance. Experimental results show that super-resolution reconstruction technology can improve the accuracy of distance measurement of adjacent corners. According to the experimental results, one can find that the measurement accuracy improvement of the super resolution algorithms is not consistent with the existing quantitative performance evaluation index. Lastly, the current challenges and future trends of super resolution algorithms for visual measurement applications are pointed out.

• 제어로봇시스템학회:학술대회논문집
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• 2004.08a
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• pp.2051-2054
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• 2004

This paper proposes a more accurate task level energy measurement technique for high speed microprocessors. The technique is based on the relationship of the amount of current consumed by the microprocessor and the pulse width of the power supply controller chip, employed in the synchronous buck DC-DC converter in the microprocessor's power supply. The accuracy of the measurement is accomplished by measuring variation in pulse width in each power supply cycle. The major advantage of this technique is that its accuracy does not depend on the operating frequency of the microprocessor. To prove the proposed technique, we implemented the measurement unit of the microprocessor energy meter using an FPGA chip operating at 50 MHz. Both static and dynamic load measurement are tested in order to obtain some behaviours. Moreover, various commercially available mainboards which employ synchronous buck regulators at 200 KHz switching frequency, were measured. The results agree with previous works with better accuracy at higher operating frequency.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.15 no.3 s.96
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• pp.329-333
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• 2005

This paper is concerned with the measurement of low-frequency vibrations of structures using the image processing method. To measure the vibrations visually, the measurement system consists of a camera, an image grabber board, and a computer. The specific target installed on the structure is used to calculate the vibration of structure. The captured image is then converted into a pixel-based data and then analyzed numerically. The limitation of the system depends on the image capturing speed and the size of image. In this paper, we propose the methodology for the vibration measurement using the image processing method. The method enables us to measure the displacement directly without any contact. The current resolution of the vibration measurement is limited to sub centimeter scale. However, the frequency bandwidth and resolution can be enhanced by a high-speed and high-resolution image processing system.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.21 no.2
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• pp.112-119
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• 2011

This paper is concerned with the measurement of static and dynamic displacement by image processing(IP) and study for prediction method of velocity and acceleration. To measure the displacement visually, the measurement system consists of a telephoto zoom camera, CCD(charge coupled device) image device and a computer. The specific target on the white board is used to calculate the displacement of the structure. The captured image is then converted into a pixel-based data and then analyzed numerically. The limitation of the system depends on the image capturing speed and the pixel-size of image. In this paper, we developed for the displacement measurement using the image processing method. The proposed method enables us to measure the vibration displacement, velocity and acceleration directly without any contact. The current resolution for the displacement measurement can be seen from the results.