• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.177.2-177
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• 2003

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.05a
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• pp.38-38
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• 1996

• Journal of the Korean Ceramic Society
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• v.26 no.5
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• pp.705-711
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• 1989

The glass-ceramics was prepared with the scoria(CaO-MgO-Al2O3-SiO2 system) of the locally occurring volcanic ejecta containing 10-13w/o of (FeO＋Fe2O3) by melting at 140$0^{\circ}C$ for 4 hours and thermally treated for nucleation and crystallization. The sucrose was added to the scoria to adjust the Fe2+/Fe3+ ratio during the melting process. The addition of 1-2w/o of sucrose showed the glass-ceramics body with the finest particle developed and dispersed over the entire range. It is concluded that the impurity content of iron oxide and titanium oxide play the most-influencial effect on the crystallization. When 1-2w/o of sucrose was added to the scoria, the value of Fe2+/Fe3+ ratio was 0.93-1.32 and showed the best result of crystallization. The nucleation temperature and time were calculated by the measurements of exothermic peak temperatures of DTA for quenched and thermally treated glasses. The nucleation temperature of scoria glass without the addition of sucrose was estimated as 75$0^{\circ}C$, but the addition of sucrose by 2w/o showed the nucleation temperature 6$25^{\circ}C$. The nucleation time was calculated with the same DTA curves. The nucleation times estimated were about 150min. for both of glasses without and with sucrose added. Finally, the activation energies for crystallization were calculated with the DTA data. The calculated activation energies were 143 Kcal/mole for the glass without addition of sucrose and 90Kcal/mole, 87Kcal/mole, 85Kcal/mole and 71Kcal/mole for the glasses of 1w/o, 2w/o, 3w/o and 4w/o addition respectively.

• Polymer(Korea)
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• v.27 no.2
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• pp.113-119
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• 2003

The thermal properties and crystallization behaviors of poly(ethylene terephthalate) (PET) were investigated by controlling the annealing conditions of PET sample, such as relative humidity, temperature, and time. The variations of moisture content, glass transition temperature ($T_g$) and cold crystallization temperature ($T_{\propto}$) were examined after annealing the PET sample. Subsequently crystallization process was performed with the annealed PET specimen, and then the degree of crystallinity and heat distortion temperature (HDT) of variously crystallized PET specimen were examined. Residual stress relaxation in the injection molded PET sample after annealing was also observed through polarized films. Moisture content in the PET specimen increased up to 6000 ppm with increasing the relative humidity, temperature, and time of annealing. $T_g$ and $T_{\propto}$ of the annealed PET specimen decreased with increasing moisture content. The degree of crystallinity increased as increasing moisture content in the PET specimen. However for same moisture content, the degree of crystallinity varied with annealing conditions. The relaxations of residual stress in the PET sample differed from annealing conditions, and the maximum degree of crystallinity increased with decreasing residual stress in the PET sample.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.960-964
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• 2004

[ $Ba_2NaNb_5O_{15}$ ](BNN) thin films have been prepared by the ion beam sputter deposition (IBSD) method on Pt coated Si substrate at temperature as low as $600^{\circ}C$ XRD, SEM were used to investigate the crystallization and microstructure of the films. It was found that the films were crack-free and uniform in microstructure. The electric properties of thin films were carried out by observation of D-E hysteresis loop, dielectric constant and leakage current. It was found the deposition rate strongly influenced the phase formation of the films, where the phase of $BaNb_2O_6$ was always formed when the deposition rate was high. However, the single phase (tungsten bronze structure ) BNN thin film was obtained with the deposition rate as low as $22{\AA}/min$. The remanent polarization Pr and dielectric constant are about 1-2 ${\mu}C/cm^2$ and $100\sim200$, respectively. It was also founded the electric properties of thin films were influenced by the deposition rate. The Pr and dielectric constant of films increased with the decrease of deposition rate. The effects of annealing temperature and annealing time to the crystallization behavior of films were studied. The crystallization of thin film started at about $600^{\circ}C$. The adequate crystallization was gotten at the temperature of $650^{\circ}C$ when the annealing time is 0.5 hour or at the temperature of $600^{\circ}C$ when the annealing time is long as 6 hours.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1604-1607
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• 2009

YAG laser crystallization of Si-based thin film deposited on plastic substrate has been studied. The Si-based thin films as crystallization precursor are with varied hydrogen (H) content. The effect of the H content on the crystallinity of the resulted poly-Si film has been investigated. The experimental results of the poly-Si crystallized by doublefrequency YAG laser shows that the initial dehydrogenation process could be left out if ${\mu}c$-Si was adopted as the crystallization precursor. The YAG laser annealing condition on plastic substrate and the crystallization results have been discussed in the paper.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.6
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• pp.407-411
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• 2000

Low-temperature solder glass for use in electronic package was experimentally prepared and its crystallization behavior was investigated using differential thermal analysis (DTA) under nonisothermal condition. The composition of the solder glass was determined from PbO-ZnO-$B_2$$O_3$-$TiO_2$ glasses containing small amounts of CaO, $SiO_2$$A1_2$$O_3$ and $P_2$$O_5$. The crystallization exotherm corresponding to the formation of lead titanate (PbTiO$_3$) was observed. The crystallization of $PbTiO_3$was a three-dimensional process with the average activation energy of 223$\pm$3 kJ/mol for the crystallization from the glass matrix.

• Korean Journal of Materials Research
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• v.22 no.4
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• pp.190-194
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• 2012

The formation of high-quality polycrystalline silicon (poly-Si) on relatively low cost substrate has been an important issue in the development of thin film solar cells. Poly-Si seed layers were fabricated by an inverse aluminum-induced crystallization (I-AIC) process and the properties of the resulting layer were characterized. The I-AIC process has an advantage of being able to continue the epitaxial growth without an Al layer removing process. An amorphous Si precursor layer was deposited on Corning glass substrates by RF magnetron sputtering system with Ar plasma. Then, Al thin film was deposited by thermal evaporation. An $SiO_2$ diffusion barrier layer was formed between Si and Al layers to control the surface orientation of seed layer. The crystallinity of the poly-Si seed layer was analyzed by Raman spectroscopy and x-ray diffraction (XRD). The grain size and orientation of the poly-Si seed layer were determined by electron back scattering diffraction (EBSD) method. The prepared poly-Si seed layer showed high volume fraction of crystalline Si and <100> orientation. The diffusion barrier layer and processing temperature significantly affected the grain size and orientation of the poly Si seed layer. The shorter oxidation time and lower processing temperature led to a better orientation of the poly-Si seed layer. This study presents the formation mechanism of a poly seed layer by inverse aluminum-induced crystallization.

• Journal of the Korean Applied Science and Technology
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• v.35 no.1
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• pp.214-222
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• 2018

Alane(aluminum trihydride, $AlH_3$) is a candidate material involving high energetic capacity for solid propellant or explosives. In this study aluminum trihydride-etherate ($AlH_3{\cdot}(C_2H_5)_2O$) was synthesized through a wet process, and solid alane was extracted by controlled crystallization. Alane crystals were grown during the crystallization step with phase conversion of aluminum trihydride-etherate to alane using an anti-solvent. Stable crystal forms were found by a 2 hour crystallization process at $85^{\circ}C$. Finally the extracted solid aluminium trihydride consisted mainly of ${\gamma}-type$ with $50-100{\mu}m$ in size.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.5
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• pp.237-241
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• 2004

Amorphous silicon (a-Si) films are used in a broad range of solar cell, flat panel display, and sensor. Because of the greater ease of deposition and lower processing temperature, thin films are widely used for thin film transistors (TFTs). However, they have lower stability under the exposure of visible light and because of their low field effect mobility ($\mu$$_{FE}$ ) , less than 1 c $m^2$/Vs, they require a driving IC in the external circuits. On the other hand, polycrystalline silicon (poly-Si) thin films have superiority in $\mu$$_{FE}$ and optical stability in comparison to a-Si film. Many researches have been done to obtain high performance poly-Si because conventional methods such as excimer laser annealing, solid phase crystallization and metal induced crystallization have several difficulties to crystallize. In this paper, a new crystallization process using a molybdenum substrate has been proposed. As we use a flexible substrate, high temperature treatment and roll-to-roll process are possible. We have used a high temperature process above 75$0^{\circ}C$ to obtain poly-Si films on molybdenum substrates by a rapid thermal annealing (RTA) of the amorphous silicon (a-Si) layers. The properties of high temperature crystallized poly-Si studied, and poly-Si has been used for the fabrication of TFT. By this method, we are able to achieve high crystal volume fraction as well as high field effect mobility.