• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.1
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• pp.44-49
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• 2022

In this paper, we investigated current (I)- and voltage (V)-sweeping properties in a double-stack structure, Ge₂Sb₂Te₅/Ti/W-doped Ge₈Sb₂Te₁₁, a candidate medium for applications to multilevel phase-change memory. 200-nm-thick and W-doped Ge₂Sb₂Te₅ and W-doped Ge₈Sb₂Te₁₁ films were deposited on p-type Si(100) substrate using magnetron sputtering system, and the sheet resistance was measured using 4 point-probe method. The sheet resistance of amorphous-phase W-doped Ge₈Sb₂Te₁₁ film was about 1 order larger than that of Ge₂Sb₂Te₅ film. The I- and V-sweeping properties were measured using sourcemeter, pulse generator, and digital multimeter. The speed of amorphous-to-multilevel crystallization was evaluated from a graph of resistance vs. pulse duration (t) at a fixed applied voltage (12 V). All the double-stack cells exhibited a two-step phase change process with the multilevel memory states of high-middle-low resistance (HR-MR-LR). In particular, the stable MR state is required to guarantee the reliability of the multilevel phase-change memory. For the Ge₂Sb₂Te₅ (150 nm)/Ti (20 nm)/W-Ge₈Sb₂Te₁₁ (50 nm), the phase transformations of HR→MR and MR→LR were observed at t<30ns and t<65ns, respectively. We believe that a high speed and stable multilevel phase-change memory can be optimized by the double-stack structure of proper Ge-Sb-Te films separated by a barrier metal (Ti).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.6
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• pp.282-287
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• 2009

$Ni_xFe_{100-x}$ films with a thickness of about 100nm were deposited on Si(100) substrates at room temperature by a DC magnetron co-sputtering using Fe and Ni targets. Compositional, structural, electrical and magnetic properties of the films were investigated. $Ni_{67}Fe_{33}$, $Ni_{55}Fe_{45}$, $Ni_{50}Fe_{50}$, $Ni_{45}Fe_{55}$, $Ni_{40}Fe_{60}$ films are obtained by increasing the sputtering power of the Fe target. The films of x < 55 have BCC structure and show the phase transformation after annealing at the range of $300{\sim}450^{\circ}C$ for 2 h. On the other hand, the films of x < 50 have the mixed crystalline phases of BCC and FCC after the annealing treatment. The saturation magnetization was decreased initially by the phase transformation effect but then increased again after annealing at $450^{\circ}C$ due to the grain growth and crystallization of BCC phases.

• Korean Journal of Materials Research
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• v.12 no.10
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• pp.814-819
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• 2002

TiN and TaN films as electrode materials of reactive sputtered $Ta_2$$O_{5}$ were prepared by sputtering to compare their thermal stabilities with $Ta_2$$O_{5}$ The microstructural change of $Ta_2$$O_{5}$ films with annealing was also investigated. As- deposited $Ta_2$$O_{5}$ film on $SiO_2$ was amorphous and annealing of 80$0^{\circ}C$ for 30 min made it transform to $\beta$-Ta$_2$O$_{5}$ crystalline which contains amorphous particles with the size of a few nm. Crystallization temperature of Ta$_2$Ta_2$$O_{5}$ on TaN is higher than that on TiN electrode. The interface between TaN and Ta$_2$O$_{5}$ maintained stably even after vacuum annealing up to $800^{\circ}C$ for 1 hr, but TiN interacted with $Ta_2$$_O{5}$ and so interdiffusion between TiN and $Ta_2$$O_{5}$ occurred by vacuum annealing of 80$0^{\circ}C$ for 1 hr. It indicates that TaN is thermally more stable with $Ta_2$$O_{5}$ than TiN.N.