• 제목/요약/키워드: crystallization

검색결과 2,445건 처리시간 0.025초

제4암모늄기의 곁가지를 가지는 폴리프로필렌에서 등온결정화속도 (Isothermal Crystallization Kinetics of Quaternary Ammonium Group Grafted Polypropylene)

  • Liu, Guangtian
    • 폴리머
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    • 제39권2호
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    • pp.268-274
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    • 2015
  • In this paper, the isothermal crystallization kinetics of a functional PP (FPP) with different grafting yields (GY)-methacryloxyethyltrimethyl ammonium chloride (DMC) grafted PP were investigated by differential scanning calorimetry (DSC). The results showed that the crystallization rate of FPP (GY=4.83%) was the highest for all of the studied samples. Furthermore, for the FPP with different GY, the value of $t_{1/2}$ became longer with increasing the grafting yield (GY). The possible explanation was that the quaternary ammonium groups introduced affected the crystallization process of the FPP in two opposite directions, i.e. promoting the nucleation and hindering the transport of the chain molecules towards the growing nuclei. Polarized optical micrographs showed that the DMC chains acted as nucleating agents, which accelerated the nucleation. In addition, the results showed the FPP had lower nucleation free energy than the PP. This study would be useful for designing the processing parameters of the grafted samples.

Enhanced Crystallization of Si at Low Temperature by $O_2$ Flow during Deposition

  • Nam, Hyoung-Gin;Koo, Kyung-Hwan
    • 반도체디스플레이기술학회지
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    • 제6권2호
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    • pp.15-18
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    • 2007
  • Effects of $O_2$ flow during deposition on Si crystallization at low substrate temperature were studied. Silicon thin films were prepared on $SiO_2$ substrates in a low-pressure chemical vapor deposition chamber using a mixture of $SiH_4$ and $H_2$. In some cases $O_2$ was intentionally introduced during deposition. Growth of poly silicon was observed at the substrate temperature as low as $480^{\circ}C$ when $O_2$ was flowed during deposition implying that crystallization of Si was enhanced by $O_2$ flow. On the other hand, $O_2$ flow did not show any significant effects at higher substrate temperature, where deposition rate is relatively fast. Enhancement mechanism of Si crystallization by $O_2$ flow was suggested from these results.

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FePt/MgO(001) 자성박막 결정화의 두께의존성 (Thickness Dependence of the Crystallization of FePt/MgO(001) Magnetic Thin Films)

  • 정지욱;이민수;조태식
    • 한국전기전자재료학회논문지
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    • 제23권2호
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    • pp.153-158
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    • 2010
  • The crystallization of FePt/MgO(001) magnetic thin films of various thicknesses has been studied using synchrotron x-ray scattering, atomic force microscope, and vibrating sample magnetometer. In film with a 499-$\AA$-thick, face-centered tetragonal, ordered FePt phase was dominantly crystallized into perpendicular (001) grains keeping the magnetically easy c-axis normal to the film plane during annealing. In film with a 816-$\AA$-thick, however, longitudinal (110) grains keeping the c-axis parallel to the film plane were grown on top of the perpendicular (001) grains. The behavior of the magnetic properties was consistent with the thickness dependence of the crystallization. We attribute the thickness dependence of the crystallization to the substrate effect, which prefers the growth of the c-axis oriented perpendicular grains near the film/substrate interfacial area.

Poly(ethylene oxide)/Poly(styrene-co-acrylic acid) Blends의 등온 결정화 속도에 관한 연구 (Kinetics of Isothermal Crystallization in Poly(ethylene oxide) and Poly(styrene-co-acrylic acid)Blends)

  • 이상철;이무성;조원호
    • 한국재료학회지
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    • 제1권3호
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    • pp.151-155
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    • 1991
  • 시차주사 열분석기를 이용하여 poly(ethylene oxide)(PEO)/poty(styrene-co-acrylic acid) (SAA) blonds에 대한 등온 결정화 속도를 blend의 조성, 사용한 SAA의 공중합조성 및 결정화 온도에 따라 조사하였다. 실험결과는 Avrami 방정식을 이용하여 분석하였다. Avrami지수는 결정화 온도에 관계없이 거의 모든 blend 시료에서 2의 값을 나타내었다. 결정화 속도는 blend시료의 SAA 함량 및 사용한 SAA 공중합체의 아크릴산함량이 증가함에 따라 급격히 느려졌다.

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표면 활성화 처리가 비정질 규소 박막의 결정화에 미치는 영향 (The effect of the surface activation treatment on the crystallization of amorphous silicon thin film)

  • 이의석;김영관
    • 한국결정성장학회지
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    • 제9권2호
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    • pp.173-179
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    • 1999
  • 본 연구에서는 비정질 규소 박막의 결정화를 촉진시키기 위하여 표면 활성화 처리의 영향을 관찰하였다. 표면 활성화 방법으로는 습식 연마법(Wet Blasting)과 Nd:YAG 레이저의 빔을 사용하였고, 700~$800^{\circ}C$에서 관상로 열처리를 행하여 고살 결정화에 미치는 영향을 보았다. 결정화 정도의 기준으로는 XRD 분석을 통해 얻은 (111) 피크강도를 이용하였으며, 결정의 품질을 분석하기 위해 Raman 분석을 행하였다. 결정화의 표면 형상에 대한 관찰은 주사전자 현미경(SEM)을 사용하였다. 본 실험 결과 표면 활성화 처리는 비정질 규소박막의 결정화를 촉진하고, 결정의 품질을 향상시키는 것으로 확인되었다. 습식 연마법(Wet Blasting)의 경루 2 Kgf/$\textrm{cm}^2$의 압력이 가장 효과적이었고, 레이저의 에너지는 100~200mJ/$\textrm{cm}^2$가 효과적이었다. 이것은 표면활성화처리를 통하여 비정질 실리콘 박막의 표면에 strain energy가 형성되어 결정화에 필요한 엔탈피에 영향을 미친 효과 때문으로 예상된다.

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Advanced Membrane Systems for Seawater Desalination. Kinetics of Salts Crystallization from RO Brines Promoted by Polymeric Membranes

  • Curcio, Efrem;Obaidani, Sulaiman Al;Macedonio, Francesca;Profio, Gianluca Di;Gualtieri, Silvia;Drioli, Enrico
    • 멤브레인
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    • 제17권2호
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    • pp.93-98
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    • 2007
  • The reliability of innovative membrane contactors technology (i.e. Gas/Liquid Membrane Contactors, Membrane Distillation/Crystallization) is today increasing for seawater desalination processes, where traditional pressure-driven membrane separation units are routinely operated. Furthermore, conventional membrane operations can be integrated with membrane contactors in order to promote possible improvements in process efficiency, operational stability, environmental impact, water quality and cost. Seawater is the most abundant aqueous solution on the earth: the amount of dissolved salts covers about 3% of its composition, and six elements (Na, Mg, Ca, K, Cl, S) account for more than 90% of ionic species. Recent investigations on Membrane Distillation-Crystallization have shown the possibility to achieve significant overall water recovery factors, to limit the brine disposal problem, and to recover valuable salts (i.e. calcium sulphate, sodium chloride, magnesium sulphate) by combining this technology with conventional RO trains. In this work, the kinetics of $CaSO_4{\cdot}2H_2O,\;NaCl\;and\;MgSO_4{\cdot}7H_2O$ crystallization is experimentally investigated in order to improve the design of the membrane-based crystallization unit.

Selective Crystallization of SAPO-5 and SAPO-34 Molecular Sieves in Alkaline Condition: Effect of Heating Method

  • Yoon, Ji-Woong;Jhung, Sung-Hwa;Kim, Young-Ho;Park, Sang-Eon;Chang, Jong-San
    • Bulletin of the Korean Chemical Society
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    • 제26권4호
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    • pp.558-562
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    • 2005
  • Crystallization of SAPO-5 and SAPO-34 molecular sieves with microwave and conventional electric heating of the same gel has been investigated in an alkaline condition using N,N,N’N’tetraethylethylenediamine as a template molecule. SAPO-5 structure can be selectively prepared with microwave heating because of the fast crystallization of the technique. On the other hand, SAPO-34 is the sole product with usual conventional electric heating because SAPO-5 can be gradually transformed into SAPO-34 structure with an increase in crystallization time. This phase selectivity is probably because of the relative stability of the two phases at the reaction conditions (kinetic effect). Crystallization with microwave heating can be suggested as a phase selective synthesis method for relatively unstable materials because of fast crystallization.

플루오르함량이 Fluorophologopite 결정들을 함유하고 있는 기계 가공성 결정화유리의 합성에 미치는 영향에 관한 연구 (Study on Effect of Fluorine Content on the Synthesis of Machinable Glass-ceramics Based on Fluorophlogopite Crystals)

  • 정형진;김병호;신용규
    • 한국세라믹학회지
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    • 제23권4호
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    • pp.1-10
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    • 1986
  • The crystallization behaviour and the machinability of mica glass-ceramics with the content of F1 were studied. The material was made from the $K_2O-MgO-Al_2O_3-B_2O_3-SiO_2-F$ glasses by the heattreatment at 80$0^{\circ}C$-110$0^{\circ}C$ where the content of F-1 was changed in the range from 1, 3wt% to 6.1wt%. X-ray diffraction phase analysis and optical observation were adopted to study the crystallization behaviour. The machinability was measured by a manual sawing test and MOR. The crystal phases of these glass-ceramics identified by XRD were chondrodite fluoborite and norbergite at low temperature but fluorophlogopite at high temperature. The crystallization of glasses containing 1.3wt% -2.5wt% F-1 were predominately controlled by surface crystallization while the crystallization of glasses containing 3.8 wt% -6.1wt% F-1 were controlled by volume crystallization. Among the test the best machinability and strength value were obtained from those specimens contained fluoride 4.2wt% -4.4wt% and when the heattreatment was performed at 95$0^{\circ}C$-110$0^{\circ}C$ for 2 hours.

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Polyester의 개질에 관한 연구 (제8보). 유연한 디올 Unit로 개질된 Poly(ethylene terephthalate)의 결정화 거동 (Copolyester Studies VIII. Crystallization Behaviours of Poly(ethylene terephthalate) Modified by the Flexible Diol Unit)

  • 안태완;김정호;정한모
    • 대한화학회지
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    • 제32권3호
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    • pp.276-284
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    • 1988
  • 1,3-propane diol, 1,5-pentane diol, 1,6-hexane diol, 분자량이 300인 poly(ethylene glycol)등을 제 3의 디올로 사용하여 poly(ethylene terephthalate)를 개질하여 개질된 copolyester의 결정화 거동을 비교하였다. 개질된 copolyester 중 제 3의 디올 함량이 약 4몰%인 경우 유리전이온도 부근에서 승온시키면서 유리전이온도로 부터 일정 온도 위에서의 결정화 속도를 비교하거나, 녹는점 부근에서 등온 결정화시켜 동일 과냉각 상태에서의 결정화 속도를 비교하면 가해진 디올의 길이가 짧을수록 결정화 속도가 크게 촉진되었다. 이에 반해 녹는점 부근에서 강온시키면서 동일 과냉각 상태에서의 결정화 속도를 비교하면 가해진 디올의 길이가 길수록 결정화 속도가 크게 촉진되었다.

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Phase Change Characteristics of SnXSe100-X Thin Films by RF-magnetron Sputtering

  • 김상균;최세영
    • 한국재료학회지
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    • 제19권4호
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    • pp.203-206
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    • 2009
  • $Sn_XSe_{100-X}$ (15|X|30) alloys have been studied to explore their suitability as phase change materials for nonvolatile memory applications. The phase change characteristics of thin films prepared by a Radio Frequency (RF) magnetron co-sputtering system were analyzed by an X-ray diffractometer and 4-point probe measurement. A phase change static tester was also used to determine their crystallization under the pulsed laser irradiation. X-ray diffraction measurements show that the transition in sheet resistance is accompanied by crystallization. The amorphous state showed sheet resistances five orders of magnitude higher than that of the crystalline state in $Sn_XSe_{100-X}$ (x = 15, 20, 25, 30) films. In the optimum composition, the minimum time of $Sn_XSe_{100-X}$ alloys for crystallization was 160, 140, 150, and 30ns at 15mW, respectively. The crystallization temperature and the minimum time for crystallization of thin films were increased by increasing the amount of Sn, which is correlated with the activation energy for crystallization.