• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.38-38
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• 2009

Wafer thickness of crystalline silicon is an important factor which decides a price of solar cell. PC1D was used to fix a condition that is required to get a high efficiency in a crystalline silicon solar cell using thin wafer($150{\mu}m$). In this simulation, base resistivity and emitter doping concentration were used as variables. As a result of the simulation, $V_{oc}$=0.6338(V), $I_{sc}$=5.565(A), $P_{max}$=2.674(W), FF=0.76 and efficiency 17.516(%) were obtained when emitter doping concentration is $5{\times}10^{20}cm^{-3}$, depth factor is 0.04 and sheet resistance is $79.76{\Omega}/square$.

• Current Photovoltaic Research
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• v.4 no.3
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• pp.124-129
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• 2016

Recently industry has voiced a need for optimally designing the production process of low-cost, high-quality ingots by improving productivity and reducing production costs with the Czochralski process. Crystalline defect control is important for the production of high-quality ingots. Also oxygen is one of the most important impurities that influence crystalline defects in single crystals. Oxygen is dissolved into the silicon melt from the silica crucible and incorporated into the crystalline a far larger amount than other additives or impurities. Then it is eluted during the cooling process, there by causing various defect. Excessive quantities of oxygen degrade the quality of silicone. However an appropriate amount of oxygen can be beneficial. because it eliminates metallic impurities within the silicone. Therefore, when growing crystals, an attempt should be made not to eliminate oxygen, but to uniformly maintain its concentration. Thus, the control of oxygen concentration is essential for crystalline growth. At present, the control of oxygen concentration is actively being studied based on the interdependence of various factors such as crystal rotation, crucible rotation, argon flow, pressure, magnet position and magnetic strength. However for methods using a magnetic field, the initial investment and operating costs of the equipment affect the wafer pricing. Hence in this study simulations were performed with the purpose of producing low-cost, high-quality ingots through the development of a process to optimize oxygen concentration without the use of magnets and through the following. a process appropriate to the defect-free range was determined by regulating the pulling rate of the crystals.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.687-687
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• 2013

In rearpoint contact solar cell and the PERC (passivated emitter rear contact) type cell, surfaces were passivated by SiO2 or Al2O3 to increase solar cell efficiency. Therefore, we have investigated the effect of surface passivation for crystalline silicon solarcell using mass-production atomic layer deposited (ALD) Al2O3. The patttern which consists of cylinders with 100um diameter and 5um height was formed by PR patterning on Si (100) substrate and then Al2O3 of about 10nm and 20nm thickness was deposited by ALD. The pattern in 10 nm Al2O3 film was removed by dipping in aceton solution for about 10 min but the pattern in 20 nm Al2O3 film was not. The influences of process temperature and heat treatment were investigated using microwave photoconductance decay (PCD) and Quasi-Steady-State photoconductance (QSSPC). The solar cell process used in this work combines the advantage of using the applicability of a selective deposition associated with a ALD passivation and the use of low-cost screen print for the contacts formation.