• 한국표면공학회지
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• 제13권1호
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• pp.3-7
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• 1980

The crystalline structure and leveling action on the deposit of zinc from the cyanide zinc electroplating bath containing organic additives, such as aldehydes, polymers, amines and condensed product, have been studied by microscope and X-ray diffraction methods. The crystalline structure of the deposit from the bath containing no-additive, polymers and aldehydes appeared very strong orientation on (101) plane and the surface was rough, while from condensed product having remarkable effects in brightness appeared very strong orientation on (110) and the crystallinity was very fine. In the leveling action, the effect of any additives except reaction product was not appreciable, whereas the effect of the reaction product obtained remarkably excellent result.

• Tribology and Lubricants
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• 제14권3호
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• pp.46-50
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• 1998

초고분자량 폴리에틸렌(Ultra-High Molecular Weight Polyethylene)은 인공관절 라이너에 쓰이는 대표적 생체재료이다. 초고분자량 폴리에틸렌의 변형과 마모에 영향을 주는 인자에 대한 기본적 연구를 위하여 본 연구에서는 미세구조 결정상의 정도와 결정구조 방향성에 따른 초고분자량 폴리에틸렌의 크리프 변형 및 마모 특성의 연구를 행하였다. 압출 제작된 초고분자량 폴리에틸렌 봉(extruded UHMWPE rod)단면의 중앙(center)부분과 원주(periphery)부분으로부터 각각 직사각형 및 원통형의 시편을 제작하여 크리프 실험과 마모 실험을 실시하였다. 원주 시편의 크리프 변형율은 중앙 시편의 크리프 변형율보다 11%크며(p<0.05), 마모량도 원주 시편이 중앙 시편보다 두 배나 큰 것으로 (p<0.05)관측되었다. 이 결고달로부터 초고분자량 폴리에틸렌의 크리프 변형과 마모가 미세 결정구조 방향성에 영향을 받는 것으로 나타났다.

• 전기학회논문지
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• 제56권5호
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• pp.905-909
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• 2007

Crystalline and micro-structural characteristics of ZnO thin films which were deposited on p-Si(100) with cooling naturally down of pre-heated substrate during RF magnetron sputter deposition, were investigated by XRD and SEM in this paper. The film which was prepared on the substrate which was pre-heated to $400^{\circ}C$ before deposition and then cooled naturally down during deposition, showed the most outstanding c-axis preferred orientation. The ZnO thin film having the best crystalline result were applied to SMR type FBAR device and resonance properties of the device were investigated by network analyzer. It showed that resonance frequency was 2.05 GHz, return loss was -30.64 dB, quality factor was 3169 and electromechanical coupling factor was 0.4 %. This deposition method would be very useful for application of surface acoustic wave filter or film bulk acoustic wave resonator.

• Journal of Mechanical Science and Technology
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• 제17권9호
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• pp.1332-1338
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• 2003

To estimate the true wear rate of polyethylene acetabular cups used in total hip arthroplasty, the dynamic compressive creep deformation of ultra-high molecular weight polyethylene (UHMWPE) was quantified as a function of time, load amplitude, and radial location of the specimen in the extruded rod stock. These data were also compared with the creep behavior of polyethylene observed under static loading. Total creep strains under dynamic loading were only 64％, 70％, and 61％ of the total creep strains under static loading at the same maximum pressures of 2 MPa,4 MPa, and 8 MPa, respectively. Specimens cut from the periphery of the rod stock demonstrated more creep than those cut from the center when they were compressed in a direction parallel to the extrusion direction (vertical loading) whereas the opposite was observed when specimens were compressed in a direction perpendicular to the extrusion direction (transverse loading). These findings show that creep deformation of UHMWPE depends upon the orientation of the crystalline lamellae.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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• pp.420-422
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• 1995

PVDF (polyvinylidene fluoride) has at least from known crystalline structure ( ; they are referred to as the $\alpha$, $\beta$, $\gamma$ and $\alpha_p$ phase or forms II, I, III and $IV_p$). In this study, the manufactured PVDF thin films through vapor deposition method had for II ( ; the substrate temperature at 30$^{\circ}C$). The dielectric behavior of poly(vinylidene fluoride) is affected by orientation and crystal modification. The very high value of the dielectric constant for high temperature conditioned film is believed to be due to the orientation effect. The loss peak caused by molecular motion of the molecules in crystalline regions.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 추계학술대회 논문집 학회본부
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• pp.200-202
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• 1996

MgO film was deposited on the glass substrate by the hollow cathode discharge ion plating method and the characteristics of the MgO thin film such as deposition rate, crystalline orientation, surface morphology and secondary electron coefficient were investigated. The deposition rate of MgO thin films were $430^{\sim}1270{\AA}$/min at various temperatures and biases. The crystalline orientation of the MgO thin film changed from (200) to (220) upon increasing the HCD current from 100A to 200A. These results indicated that the crystallin orientation of the MgO thin film was determined by the super-saturation ratio. The (200) peak decreased and the (220) peak increased as the substrate bias increased, while both peaks increased as the substrate temperature increased. The grain size increased as the substrate bias increased and the secondary electron emission coefficient increased as the substrate bias increased.

• 한국염색가공학회지
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• 제4권3호
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• pp.91-96
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• 1992

The crystalline character of NaOH and KOH-cellulose complex having different tension ratio was studied using X-ray diffraction analysis. Cellulose crystalline lattices in tension alkali treatment cotton were identified by measuring and indexing the 101, 101, and 002 reflections. According as alkali treatment tension ratio increased on, cellulose gave rise to the formation of I rather than cellulose II. It seemed that a part of the fine structure of cellulose increased orientation with antiparaell and parallel chain crystal structure. The high tension ratio alkali treatment cotton resulted in lower dye sorption and in higher breaking strength and crease recovery.

• 한국재료학회지
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• 제22권4호
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• pp.190-194
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• 2012

The formation of high-quality polycrystalline silicon (poly-Si) on relatively low cost substrate has been an important issue in the development of thin film solar cells. Poly-Si seed layers were fabricated by an inverse aluminum-induced crystallization (I-AIC) process and the properties of the resulting layer were characterized. The I-AIC process has an advantage of being able to continue the epitaxial growth without an Al layer removing process. An amorphous Si precursor layer was deposited on Corning glass substrates by RF magnetron sputtering system with Ar plasma. Then, Al thin film was deposited by thermal evaporation. An $SiO_2$ diffusion barrier layer was formed between Si and Al layers to control the surface orientation of seed layer. The crystallinity of the poly-Si seed layer was analyzed by Raman spectroscopy and x-ray diffraction (XRD). The grain size and orientation of the poly-Si seed layer were determined by electron back scattering diffraction (EBSD) method. The prepared poly-Si seed layer showed high volume fraction of crystalline Si and <100> orientation. The diffusion barrier layer and processing temperature significantly affected the grain size and orientation of the poly Si seed layer. The shorter oxidation time and lower processing temperature led to a better orientation of the poly-Si seed layer. This study presents the formation mechanism of a poly seed layer by inverse aluminum-induced crystallization.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.419-419
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• 2016

High efficiency silicon solar cell requires the textured front surface to reduce reflectance and to improve the light trapping. In case of mono-crystalline silicon solar cell, wet etching with alkaline solution is widespread. However, the alkali texturing methods are ineffective in case of multi-crystalline silicon wafer due to grain boundary of random crystallographic orientation. The acid texturing method is generally used in multi-crystalline silicon wafer to reduce the surface reflectance. However the acid textured solar cell gives low short-circuit current due to high reflectivity while it improves the open-circuit voltage. To reduce the reflectivity of multi-crystalline silicon wafer, double texturing method with combination of acid and reactive ion etching is an attractive technical solution. In this paper, we have studied to optimize RIE experimental condition with change of RF power (100W, 150W, 200W, 250W, 300W). During experiment, the gas ratio of SF6 and O2 was fixed as 30:10.

• 한국세라믹학회지
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• 제32권10호
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• pp.1103-1110
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• 1995

Silicon carbide (SiC) films have been deposited on the isotropic graphite by chemical vapor deposition. Change of deposition parameters affected significantly the microstructure and preferred orientation of SiC films. Preferred orientation of SiC films was (111) or (220), and microstructure showed the startified structure consisting of small crystallite or faceted columnar structure depending on the deposition parameters. For microhardness, (111) oriented film and stratified structure were superior to (220) oriented film and faceted columnar structure, respectively. Surface of (111) oriented films was less rough than that of (220) oriented films. Adhesion force between graphite substrate and SiC films was above 100N for crystalline films and 49N for amorphous film.