• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.7
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• pp.635-645
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• 2016

In this paper, we showed the phase noise of voltage controlled oscillator(VCO) can be radically improved using FLL(Frequency Locked Loop). At first, a 5 GHz VCO is fabricated using a hair-pin resonator. The fabricated VCO shows a phase noise of -53.1 dBc/Hz at 1 kHz frequency offset. In order to improve the phase noise of the fabricated VCO, a FLL is constructed using the feedback loop that consists of the VCO, a frequency detector composed of 5 GHz resonator, loop-filter, and level shifter. The fabricated FLL is designed to oscillate at a frequency of 5 GHz, and its measured phase noise is about -120.6 dBc/Hz at 1 kHz offset frequency. As a result, the phase noise of VCO can be radically improved by about 67.5 dB applying FLL. In addition, the measured phase noise performance is close to that of crystal oscillator.

• Journal of the Korean Institute of Telematics and Electronics
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• v.11 no.6
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• pp.44-49
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• 1974

reactance modulator composed of multi-stage phase modulator utilizing VVC diodes as variable reactance elements and an oscillartor-modulator, utilizing a VVC diode as a tuning element, coupled to a crystal resonator through an artificial λ/4 network are introduced and their characteristics as FM modulator are compared mutually from the practical view points. especially, to get high modulation sensitivity of reactance modulators using VVC diodes, making a multi-stage modulation distortion characteristics of multi-stage modulator was necessary. The harmonic moj\dulationdistorion characteristics of multi-stage reactance modulator is analized in detall. Multi-stage reachance modulator is preferable to maintain sufficiently stable carrier frequency over the wide range of temperature and a mobile-transceiver was made through this method. On the other hand, FM-Quartz oscillator using a VVc diode is suitavle for handy-talkies of good quality were made through this method.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.4
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• pp.41-54
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• 2002

In this study, we have analyzed the effects of the membrane layer and the bragg reflector layers on the resonance characteristics through comparing the characteristics of the membrane type FBAR (Film Bulk Acoustic Wave Resonator) and the one type bragg reflector layers with those of the ideal FBAR with top and bottom electrode contacting air by using equivalent circuit technique. It is assumed that ZnO is used for piezoelectric film, $SiO_2$ are used for membrane layer and low acoustic impedance layer, W are used for the high acoustic reflector layer and Al is used for the electrode. Each layer is considered to have a acoustic propagation loss. ABCD parameters are picked out and input impedance is calculated by converting 1-port equivalent circuit to simplified equivalent circuit that ABCD parameters are picked out possible. From the variation of resonance frequency due to the change of thickness of electrode layers, reflector layers and membrane layer it is confirmed that membrane layer and the reflector layer just under the electrode have the greatest effect on the variation of resonance frequency. From the variation of resonance properties, K and electrical Q with the number of layers, K is not much affected by the number of layers but electrical Q increases with the number of layers when the number of layers is less than seven. The electrical Q is saturated when the number of layers is large than six. The electrical Q is dependent of mechanical Q of reflector layers and membrane layer. Both ladder filter and SCF (Stacked Crystal Filters) show higher insertion loss and out-of-band rejection with the increase of the number of resonators. The insertion loss decreases with the increase of the number of reflector layers but the bandwidth is not much affected by the number of reflector layers. Ladder Filter and SCF with membrane layer show the spurious response due to spurious resonance properties. Ladder filter shows better skirt-selectivity characteristics in bandwidth but SCF shows better characteristics in insertion loss.

• Korean Journal of Optics and Photonics
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• v.16 no.6
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• pp.535-541
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• 2005

We report on the development of a passively mode-locked near-infrared femtosecond laser with Cr:YAG crystal that operates near room temperature. The laser wavelength could easily be tuned by using only the internal prism pair over 110 nm from 1400 nm to 1510 nm in cw and over about 30 nm in mode-locked operation, respectively Maximum cw output powers of 810 mW were obtained with $1.5 \%$ output coupler for absorbed pump powers of 7.6 W. For compensation of the internal group velocity dispersion, an IR graded prism pair was used. The Cr:YAG laser delivered nearly Fourier-transform limited pulses with a pulse duration as short as 64 fs at 100 MHz repetition rate. In the mode-locked regime, the laser was operating at 1510 nm with a spectral bandwidth of 44 nm. In order to avoid unstable mode-locking and power instabilities, self-built tubes were inserted into the beam path in the resonator and purged with N2 gas. Finally, output powers of the Cr:YAG laser were optimized to 250 mW fer long time stable mode-locked operation.

• Journal of the Korean Magnetics Society
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• v.5 no.2
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• pp.128-133
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• 1995

Yttrium Iron Garnet($Y_{3}Fe_{5)O_{12}$) films have been succsssfully grown on(111)GGG wafer by KrF excimer laser ablation of stoichiometric garnet target at the oxygen partial pressure, $P(O_{2}$, ranging 20 to 500 mTorr. During the deposition of the films the substrate temperature was maintained at $700^{\circ}C$ and the laser beam energy density at $7.75\;J/cm_{2}$. Microstructure, composition and magnetic properties of the films obtained were investigated as a function of oxygen pressure and thickness of the films. Epitaxial films with a dense and a smooth surface were reproducible at a low oxygen pressure. The films of $2.75\;{\mu}$ min thickness deposited at 20 mTorr of $P(O_{2})$ showed $4{\pi}M_{s}$ of 1500 Gauss and $H_{c}$ of 3 Oe after annealing at $800\;^{\circ}C$ for 20 minutes. As-deposited films of $0.8\;\mu\textrm{m}$ in thickness exhibited the $4{\pi}M_{s}$ of 1730 Gauss and $H_{c}$ of 7 Oe. The magnetic properties of the films obtained were almost identical to those of a single crystal YIG.