• Korean Journal of Materials Research
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• v.20 no.6
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• pp.289-293
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• 2010

Silicon quantum dots (Si QDs) in a superlattice for high efficiency tandem solar cells were fabricated by magnetron rf sputtering and their characteristics were investigated. SiC/$Si_{1-x}C_x$ superlattices were deposited by co-sputtering of Si and C targets and annealed at $1000^{\circ}C$ for 20 minutes in a nitrogen atmosphere. The Si QDs in Si-rich layers were verified by transmission electron microscopy (TEM) and X-ray diffraction. The size of the QDs was observed to be 3-6 nm through high resolution TEM. Some crystal Si and -SiC peaks were clearly observed in the grazing incident X-ray diffractogram. Raman spectroscopy in the annealed sample showed a sharp peak at $516\;cm^{-1}$ which is an indication of Si QDs. Based on the Raman shift the size of the QD was estimated to be 4-6 nm. The volume fraction of Si crystals was calculated to be about 33%. The change of the FT-IR absorption spectrum from a Gaussian shape to a Lorentzian shape also confirmed the phase transition from an amorphous phase before annealing to a crystalline phase after annealing. The optical absorption coefficient also decreased, but the optical band gap increased from 1.5 eV to 2.1 eV after annealing. Therefore, it is expected that the optical energy gap of the QDs can be controlled with growth and annealing conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.327-327
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• 2009

ZnO with a large band gap (~3.37 eV) and exciton binding energy (~60 meV), is suitable for optoelectronic applications such as ultraviolet (UV) light emitting diodes (LEDs) and detectors. However, the ZnO-based p-n homojunction is not readily available because it is difficult to fabricate reproducible p-type ZnO with high hall concentration and mobility. In order to solve this problem, there have been numerous attempts to develop p-n heterojunction LEDs with ZnO as the n-type layer. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducible availability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices. In particular, a number of ZnO films show UV band-edge emission with visible deep-level emission, which is originated from point defects such as oxygen vacancy, oxygen interstitial, zinc interstitial[1]. Thus, defect-related peak positions can be controlled by variation of growth or annealing conditions. In this work, the undoped ZnO film was grown on the p-GaN:Mg film using RF magnetron sputtering method. The undoped ZnO/p-GaN:Mg heterojunctions were annealed in a horizontal tube furnace. The annealing process was performed at $800^{\circ}C$ during 30 to 90 min in air ambient to observe the variation of the defect states in the ZnO film. Photoluminescence measurements were performed in order to confirm the deep-level position of the ZnO film. As a result, the deep-level emission showed orange-red color in the as-deposited film, while the defect-related peak positions of annealed films were shifted to greenish side as increasing annealing time. Furthermore, the electrical resistivity of the ZnO film was decreased after annealing process. The I-V characteristic of the LEDs showed nonlinear and rectifying behavior. The room-temperature electroluminescence (EL) was observed under forward bias. The EL showed a weak white and strong yellowish emission colors (~575 nm) in the undoped ZnO/p-GaN:Mg heterojunctions before and after annealing process, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.249-249
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• 2009

We have grown large area BSTO($(Ba_{1-x}Sr_x)TiO_3$) thin films (x=0.4) on 2 inch diameter MgO (001) single crystal substrates using a pulse laser deposition(PLD) system. Substrate temperature and oxygen pressure in the deposition chamber, and the laser optics for ablating a target have been controlled to obtain the uniform thickness and preferred orientation of the films. Results of x-ray diffraction and rocking curve analysis revealed that the BSTO films were grown on MgO substrates with a preferred orientation (002), and the full width half maximum of the rocking curve was measured to be 0.86 degree at optimum condition. Roughness of the films have been measured to be $3.42{\AA}$ rms by using atomic force microscopy. We have successfully deposited the large area BSTO thin films of $4000{\AA}$ thickness on 50 mm diameter MgO substrates.

• Economic and Environmental Geology
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• v.45 no.5
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• pp.535-549
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• 2012

Main aspect of this study are to clarify mineral compositions on granites in Youngkwang-Naju area. These granites are is divided into four rock facies based on the geologic ages, mineralogical composition and chemical constituents, and texture : hornblende-biotite granodiorite, biotite granite, porphyritic granite and two mica granite. These granites constitude an igneous complex formed by a series of differentiation from cogenetic magma. In compressive stress field between the Ogcheon folded belt and the Youngnam massif, the foliated and undeformed granites had formed owing to heterogeneous distribution of stress. The geochemical data of study area indicate magma of these rocks would had been generated by melting in lower and middle crust. The major minerals of granitic rocks in study area are plagioclase, biotite, muscovite and hornblende. Plagioclase range in composition from oligoclase ($An_{19.3-27.7}$) to andesine ($An_{28.4-31}$), and shows normal zoning patterns, This uniformed composition indicated slow crystallization, and it is obvious that the growth of these crystal occurred before final consolidation of the magma. The Mg content of biotite are increases with increasing of $f_{O2}$ and grade of differentiation, changing from phlogopite to siderophyllite. Its $Al^{iv}$/$Al^{total}$ ratios are propertional to bulk rock alumina content. Muscovite is primary in origin with high content of $TiO_2$, and Its composition correspond to celadonitic muscovite. Hornblende indicated calc amphibole group ($(Ca+Na)_{M4}{\geq}1.43$, $Na_{M4}<0.67$). and consolidation pressure of granitic body by geobarometer of Hammerstrume and Zen show 11.3~17.2 Km.

• Applied Chemistry for Engineering
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• v.10 no.1
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• pp.105-111
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• 1999

When the preparation method of iron silicide films possess the annealing process, the interfacial state of the films is not fine. The good quality films were obtained as the plasma was used without annealing processing. Since the injected precursors were various active species in the plasma state, the organic compound was contained in the prepared films. We confirmed the formation of Fe-Si bonds as well as the organic compound by Fe and Si vibration mode in Raman scattering spectrum at $250cm^{-1}$ and Ft-IR. Because of epitaxy growth being progressed by the high energy of plasma at the low temperature of substrate, iron silicide was epitaxially grown to ${\beta}$-phase that had lattice structure such as [220]/[202] and [115]. Band gap of the prepared films had value of 1.182~1.174 eV and optical gap energy was shown value of 3.4~3.7 eV. The Urbach tail and the sub-band-gap absorptions were appeared by organic compound in films. We knew that the prepared films by plasma were obtained a good quality films because of being grown single crystal.

• Korean Journal of Materials Research
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• v.4 no.1
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• pp.37-43
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• 1994

Y-Ra-Cu-0 oxide superconductors were fabricated by the sinter-forging method to make the critical current density improve through controlling of microstructure and crystal texture. The grain alignment of oxide superconductor was formed by the sinter-forging process and it's c-axis orientation was parallel to the press direction.The orientation factor of texture increased with sinking temperature and pressure, and also grain alignment was improved by the addition of Ag. As for the sinterforged Y-Ba-Cu-O/Ag sample, the $T_c$(on-set) was not almost varied with the sinter-forging temperature, but $T_c\;^{zero}$ decreased more or less at high sinter-forging temperatures. In addition, it was observed that added-Ag was mainly distributed along the grain boundar~es in the (123) matrix, resulting in the densification of microstructure. From these results, i t was thought that the improvement of $J_c$ over 2000A/$\textrm{cm}^2$ was attributed to the texture, densification of microstructure, and (123) grain growth due to the Ag addition.

• Korean Journal of Materials Research
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• v.4 no.1
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• pp.81-89
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• 1994

Ti film of lOnm thickness and Co film of 18nm thickness were sequentially e-heam evaporated onto Si (100) substrates. Metal deposited samples were rapidly thermal-annt.aled(KTA) in thr N1 en vironment a t $900^{\circ}C$ for 20 sec. to induce the reversal of metal bilayer, so that $CoSi_{2}$ thin films could be formed. The sheet resistance measured by the 4-point probe was 3.9 $\Omega /\square$This valur was maintained with increase in annealing time upto 150 seconds, showing high thermal stab~lity. Thc XRII spectra idrn tified the silicide film formed on the Si substrate as a $CoSi_{2}$ epitaxial layer. The SKM microgr;iphs showed smooth surface, and the cross-sectional TKM pictures revealed that the layer formed on the Si substrate were composed of two Co-Ti-Si alloy layers and 70nm thick $CoSi_{2}$ epl-layer. The AES analysis indicated that the native oxide on Si subs~rate was removed by TI ar the beginning of the RTA, and Ihcn that Co diffused to clean surface of Si substrate so that epitaxial $CoSi_{2}$ film could bt, formed. In thc rasp of KTA at $700^{\circ}C$. 20sec. followed by $900^{\circ}C$, 20sec., the thin film showed lower sheet resistance, but rough surface and interface owing to $CoSi_{2}$ crystal growth. The application scheme of this $CoSi_{2}$ epilayer to VLSI devices and the thermodynarnic/kinetic mechan~sms of the $CoSi_{2}$ epi-layer formation through the reversal of Co/Ti bdayer were discussed.

• The Journal of the Petrological Society of Korea
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• v.8 no.2
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• pp.92-105
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• 1999

The Cretaceous Chaeyaksan basaltic rocks consist mainly of basaltic tuffs intercalating three layers of basalt. Stratigraphically, the rocks are located between the upper Songnaedong Formation and the lower Geoncheonri Formation and contain plagioclase, augite, hornblende, and a few olivine phenocrysts. Geochemically, they show calc-alkaline characteristics in some immobile element content, but show the alkaline suite feature in the mobile major element composition. The basalts are widely spilitized but some of them is altered to shoshonitic rocks with more calcic plagioclase, calcite, and chlorite, and adularia veinlets are common in the rocks. It is supposed that the post-eruption alteration of the rocks is done through alkali-replacement by hydrothermal solution or vapor rather than by low grade regional metamorphism. It is considered that A1 in hornblende will be available for estimating the pressure of the pre-eruption magma in the reservoir although the plagioclase of the rocks are highly albitized. The crystallization pressure was calculated as 5.7Kb by the equation of Johnson and Rutherford(l989) incorporating of the effect of overestimate of .41T in hornblende in the case of quartz-free rocks. Application of the estimated temperature, pressure and the constituent of phenocrysts of the rocks to the experimental P-T phase diagram for basalts established by Green(1982) indicates the crystallization course and succession of growth of the phenocrysts during of rising and cooling of the magma reservoir; augite + augite and olivine + augite, olivine, and hornblende -+ augite and hornblende+ augite, hornblende, and plagioclase. Such evolution course of the magma may include crystal fractionation by the phenocrysts crystallization and contamination by country rock in lower crust.

• Journal of the Korean Ceramic Society
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• v.42 no.4
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• pp.245-250
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• 2005

ZnO was deposited on sapphire single crystal substrate by an ultrasonic pyrolysis of Zinc Acetate Dehydrate (ZAH) with carrying Ar gas. Through Thermogravimetry-Differential Scanning Calorimetry(TG-DSC), zinc acetate dihydrate was identified to be dissolved into ZnO above $380^{\circ}C$. ZnO deposited at $380-700^{\circ}C$ showed polycrystalline structures with ZnO (101) and ZnO (002) diffraction peaks like bulk ZnO in XRD, and from which c-axis strain ${\Sigma}Z=0.2\%$ and compressive biaxial stress$\sigma=-0.907\;GPa$ was obtained for the ZnO deposited $400^{\circ}C$. Scanning electron microscope revealed that microstructures of the ZnO were dependent on the deposition temperature. ZnO grown below temperature $600^{\circ}C$ were aggregate consisting of zinc acetate and ZnO particles shaped with nanoblades. On the other hand the grain of the ZnO deposited at $700^{\circ}C$ showed a distorted hexagonal shape and was composed of many ultrafine ZnO powers of 10-25 nm in size. The formation of these ulrafine nm scale ZnO powers was explained by the model of random nucleation mechanism. The optical property of the ZnO was analyzed by the photoluminescence (PL) measurement.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.127.1-127.1
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• 2011

In this paper, ZnO:Al thin films with c-axis preferred orientation were prepared on Soda lime glass substrates by RF magnetron sputtering technique. AZO thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and substrate temperature conditions variously, structural and electrical characteristics were measured. For the manufacture of the AZO were vapor-deposited in the named order. It is well-known that post-annealing is an important method to improve crystal quality. For the annealing process, the dislocation nd other defects arise in the material and adsorption/decomposition occurs. The XRD patterns of the AZO films deposited with grey theory prediction design, annealed in a vacuum ambient($2.0{\times}10-3$Torr)at temperatures of 200, 300, 400 and $500^{\circ}C$ for a period of 30min. The diffraction patterns of all the films show the AZO films had a hexagonal wurtzite structure with a preferential orientation along the c-axis perpendicular to the substrate surface. As can be seen, the (002)peak intensities of the AZO films became more intense and sharper when the annealing temperature increased. On the other hand, When the annealing temperature was $500^{\circ}C$ the peak intensity decreased. The surface morphologies and surface toughness of films were examined by atomic force microscopy(AFM, XE-100, PSIA). Electrical resistivity, Gall mobility and carrier concentration were measured by Hall effect measuring system (HL5500PC, Accent optical Technology, USA). The optical absorption spectra of films in the ultraviolet-visibleinfrared( UV-Vis-IR) region were recorder by the UV spectrophotometer(U-3501, Hitachi, Japan). The resistivity, carrier concentration, and Hall mobility of ZnS deposited on glass substrate as a function of post-annealing.