• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1996.06a
• /
• pp.38-74
• /
• 1996

Recently, the development of new crystal materials for optical applications has become a focus of considerable interest because of the progress of optoelectronic technologies. We have carried out investigations focussing on the development of new optical and electrical materials, by systematic investigations of advanced crystal growth techniques. Here, research and progress in development of new materials and crystal growth techniques is reviewed.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.6 no.2
• /
• pp.286-292
• /
• 1996

The research activities on the thin film crystal growth presented in the Journal of the Korean Association of Crystal Growth form 1991 to 1995 have been reviewed.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.6 no.1
• /
• pp.107-120
• /
• 1996

The research activities on the bulk crystal growth presented in the journal of the Korean Association of Crystal Growth from 1991 to 1995 have been reviewed.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.3 no.2
• /
• pp.117-124
• /
• 1993

It was found that the basic principle of continuous crystal growth method was following as; the powder supplied from the feeding system is molten in the graphite crucible under the ambient gas. After forming the molten zone in the lower part of the crucible, the seed crystal is deeped into the melt and pulled down with the rotation so that the melt crystallized from the seed. When the lowering rate, rotation rate, feeding rate and temperature are correct, the single crystal can grow. The critical melt level, the feeding rate, the growth rate, the change of the shape of molten zone by the graphite susceptor and crucible, the position of work coil, the balance between the gravitational force of melt and the centrifugal force originated from the rotation of seed which are the variables of the crystal growth and the sintering phenomenon of melt surface were researched.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.2 no.1
• /
• pp.1-9
• /
• 1992

Radiation heat transfer was calculated for initial stage of crystal growth in Czochralski crystal growth system. View factors among surface elements were calculated for the estimation of heat evolution and all the surfaces were assumed to be diffuse-gray. The values of view factors were greatly different along the position of surface elements. The dissipated amounts of heat flux from the melt surface were 3.6 times larger than those from the crystal surface at the initial stage of crystal growth and this amounts were greater when the surface elements were not considered. The trijunction part of the crystal was greatly affected by the melt surface near the crystal. Consequently radiation heat transfer between surface elements must be considered in order to correctly simulate the initial crystal growth.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1997.10a
• /
• pp.1-5
• /
• 1997

The growth mechanism of AMT(Ammonium Meta-Tungstate) crystal was interpreted as two-step model. The contribution of the diffusion step increased with the increase of temperature, crystal size, and supersaturation. The crystal size distribution from a batch cooling crystallizer was predicted by the numerical solution of a mathematical model which uses the kinetics of nucleation and crystal growth. Temperature control of a batch crystallizer was studied using Learning control algorithm. The purity of AMT crystal producted in this investigation was above 99.99%.

• Journal of the Korean Ceramic Society
• /
• v.27 no.6
• /
• pp.783-789
• /
• 1990

Shaped crystal growth apparatus were made for sapphire ribbon single crystal growth. Sapphire ribbon single crystal are grown by EFG(Edge-defined Film-fed Growth) methdo for use as watch-glass and SOS(Silicon-On-Sapphire) devices. Sapphire ribbon crystals were grown to be 40min wide, 1.8mm thick, 96mm long. Therelationshiops between growth striation and surface roughness, with various growth rates, were investigated and compared. It was found that sapphire ribbon crystal is suitable for watch-glass by measuring the transmittance in the visible light region.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.13 no.4
• /
• pp.187-198
• /
• 2003

Zinc selenide (ZnSe) single crystals hold promise for many electro-optics, acousto-optic and green laser generation applications. This material is prepared in closed ampoules by the physical vapor transport (PVT) growth method based on the dissociative sublimation. We investigate the effects of diffusive-convection on the crystal growth rate of ZnSe with a low vapor pressure system in a horizontal configuration. Our results show that for the ratios of partial pressures, s=0.2 and 2.9, the growth rate increases with the Peclet number and the temperature differences between the source and crystal. As the ratio of partial pressures approaches the stoichiometric value of 2, the rate increases. The mass fluk based on one dimensional (1D model) flow for low vapor pressure system fall within the range of the predictions (2D model) obtained by solving the coupled set of conservation equations, which indicates the flow fields would be advective-diffusive. Therefore, the rate and the flow fields are independent of gravity acceleration levels.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.7 no.1
• /
• pp.76-80
• /
• 1997

ZnSe single crystals were grown by seeded chemical vapor transport in $H_2$ atmosphere. The influence of the growth parameters on the crystal defect was investigated. The grown ZnSe single crystal was characterized by chemical etching, X-ray rocking curve and photoluminescenc e measurements.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.9 no.4
• /
• pp.360-364
• /
• 1999

The growth of crystals with high melting point$t_{fus}$$\geq$$1600^{\circ}C$ faces the researcher with experimental problems, as the choice of materials that withstand such high t is rather limited. Many metallic construction materials are in this high t range already molten or exhibit at least a drastically reduced mechanical strength. The very few materials with$t_{fus}$$1600^{\circ}C$ as e.g. W, Mo, and partially even Ir are more or less sensitive against oxygen upon heating. Whenever possible, high t crystal growth is performed under inert atmosphere (noble gases). Unfortunately, many oxides are not thermodynamically stable under such conditions, as reduction takes place within such atmosphere. A thoroughly search for suitable growth conditions has to be performed, that are on the one side "oxidative enough" to keep the oxides stable and on the other side "reductive enough" to avoid destruction of constructive parts of the crystal growth assembly. The relevant parameters are t and the oxygen partial pressure${po}_{2}$. The paper discusses quantitatively relevant properties of interesting oxides and construction materials and wasy to forecast theri behavior under growth conditions.