• Applied Microscopy
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• 제45권4호
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• pp.203-207
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• 2015

Sample preparation is very important for crystal structure analysis of novel nanostructured materials in electron microscopy. Generally, a grid dispersion method has been used as transmission electron microscope (TEM) sampling method of nano-powder samples. However, it is difficult to obtain the cross-sectional information for the tabular-structured materials. In order to solve this problem, we have attempted a new sample preparation method using focused ion beam. Base on this approach, it was possible to successfully obtain the electron diffraction patterns and high-resolution TEM images of the cross-section of tabular structure. Finally, we were able to obtain three-dimensional crystallographic information of novel zeolite nano-crystal of the tabular morphology by applying the new sample preparation technique.

• 한국전기전자재료학회논문지
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• 제24권2호
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• pp.156-161
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• 2011

The present study introduces a novel wet etching technique for nanostructure fabrications which usually requires low surface roughness. Using the current method, acquired profiles were smooth even in the nanoscale, which cannot be easily achieved with conventional wet or dry etching methods. As one of the most popular single crystal silicon etchant, potassium hydroxide (KOH) solution was used as a base solvent and two additives, antimony trioxide (Sb2O3) and ethyl alcohol were employed in. Four experimental parameters, concentrations of KOH, Sb2O3, and ethyl alcohol and temperature were optimized at 60 wt.%, 0.003 wt.%, 10 v/v%, and $23^{\circ}C$, respectively. Effects of additives in KOH solution were investigated on the profiles in both (110) and (111) planes of single crystal silicon wafer. The preliminary results show that additives play a critical role to decrease etch rate significantly down to ~2 nm/min resulting in smooth side wall profiles on (111) plane and enhanced surface roughness.

• International Journal of Precision Engineering and Manufacturing
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• 제1권2호
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• pp.55-60
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• 2000

A comparison of Riveted and bonded repairs, bearing and net tension failures, and Al 6061-T6 plates is presented. The results are then compared with previous papers about bonded repairs on different patch materials and shapes. Aluminum alloys, including Al 6061-T6, have a face-centered-cubic crystal structure. Under normal circumstances, these types of crystal structures do not exhibit cleavage fractures even at very low temperatures. In aluminum-base structures, the cracked plate structures are frequently repaired using mechanical fasteners-either rivets of bolts- even though patch-bonding techniques are applied to repair and reinforce the structure. Static test results indicate that the riveted repairs are affected by the position of the rivers. When using the same size of patch, the bonded repair technique is stronger; the rate of elongation is also increased. Form FEM analysis, it is revealed the origin of patch debonding in patch-bonded structures is the edge of the patch along to the tensile strength.

• 한국컴퓨터산업학회논문지
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• 제5권2호
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• pp.261-268
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• 2004

본 연구는 다기능의 광 네트워크에 있어서 256 위상 Opto-ULSI 프로세서를 구현하는 최적위상 디자인을 제안한다. 이미 구성된 8 위상 프로세서에 대한 디자인의 실험 특성을 바탕으로 하여 본 연구에서 액정의 비선형성을 보정하며 최적의 위상을 찾아 대용량의 Opto-ULSI 프로세서를 구현할 수 있다. 이 연구는 최적의 위상 특성을 조사하고 액정의 비선형성 보정방법에 대한 개발을 통해 초기의 8 위상 Opto-ULSI 프로세서 개발을 중심으로 통합된 지능형 포토닉스 시스템 (IIPS)을 위한 광선제어 Opto-ULSI (BS) 프로세서 (OUP) 구현을 목표로 한다.

• Bulletin of the Korean Chemical Society
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• 제24권3호
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• pp.274-278
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• 2003

New banana-shaped achiral compounds, 1,3-phenylene bis [4-{4-(alkenyloxy) phenyliminomethyl}benzoate]s were synthesized by varying the length of alkenyl group; their ferroelectric properties are described. The smectic mesophases, including a switchable chiral smectic C $(Sm\;C^*)$ phase, were characterized by differential scanning calorimetry, polarizing optical microscopy and triangular wave method. The presence of vinyl groups at the terminals of linear side wings in the banana-shaped achiral molecules containing Schiff's base mesogen induced a decrease in melting temperature and formation of the switchable $(Sm\;C^*)$ phase in the melt. The smectic phases having the octenyloxy group such as $(CH_2)_6CH=CH_2$ showed ferroelctric switching, and their values of spontaneous polarization on reversal of an applied electric field were 120 nC/cm² (X=H) and 225 nC/ cm² (X=F), respectively. We could obtain ferroelectric phases by controlling the number of carbon atom in alkenyloxy chain of a bent-core molecule.

• 한국전자통신학회논문지
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• 제3권3호
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• pp.158-164
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• 2008

본 논문은 다중기능 광 네트워크에 있어서 256위상 광 ULSI 프로세서를 구현하기 위한 최적위상 도출에 관해 연구한다. 이미 구성된 8위상 프로세서를 실험 및 평가를 위한 기반으로 사용한다. 이 연구에서는 액정의 비선형성을 상쇄시킬 수 있는 최적의 위상을 찾아내어 보다 큰 규모의 광 ULSI 프로세서 구현이 가능하게 한다. 이는 집적화된 지능형 광자유도 시스템(IIPS)에 사용되는 빔 조종 8위상 광 ULSI 프로세서에 기초하여 구현 된다.

• 한국표면공학회지
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• 제52권2호
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• pp.103-110
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• 2019

As an anti-corrosion method in seawater, cathodic protection is widely recognized as the most effective and technically appropriate corrosion prevention methodology for marine structures against harsh corrosive environment. When applying the cathodic protection in seawater, the surface of the metal facilities the formation of compounds of $CaCO_3$ and $Mg(OH)_2$. These mixed compounds are generally called 'calcareous deposits'. This layer functions as a barrier against the corrosive environment and functions to further inhibit the corrosion process and then leading to a decrease in current demand for cathodic protection. However, calcareous deposit films are partially formed on the surface of the cathode and there are some difficulties to maintain both a corrosion resistance for a long period of time and a strong adhesion between deposits and base metal. In this study, the pulse electrodeposition process was applied to improve adhesion and corrosion resistance of the calcareous deposit films, and to solve the problem of hydrogen embrittlement at high current density. The uniform and compact calcareous deposit films were prepared by pulse electrodeposition process, and their properties were characterized using various surface analytical techniques together with electrochemical methods.

• 대한화학회지
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• 제53권4호
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• pp.407-414
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• 2009

o-phenylenediamine, 3-acetyl-6-methyl-(2H) pyran, 2,4 (3H)-dione (dehydroacetic acid or DHA) 및 살리실 알데히드로부터 유도한 4-hydroxy-3-(1-{2-(2-hydroxy-benzylidene)-amino phenylimino}-ethyl)-6- methy-pyran-2-one (H2L) 의 Cu(II), Ni(II), Co(II), Mn(II) 및 Fe(III) 고체 착물을 합성한 후, 원소분석, 전도 도법, 수자율, 자외선-가시선, 적외선, $^1H$-NMR 스펙트라, X-선 회절, 열분석을 통해 특성을 규명하고 항균 활성을 조사하였다. IR 스펙트럼 데이터로부터 이 리간드가 중심 금속이온에 대해 ONNO 주개원자 배열을 갖는 이염기성 네자리 리간드로 행동함을 제안하였다. 원소분석 데이터로부터 이들 착물의 화학량론이 1:1 (금속:리간드)임을 알았다. 물리-화학적 데이타로부터 Cu(II) 및 Ni(II) 착물이 사각평면 기 하구조, 그리고 Co(II), Mn(II) 및 Fe(III) 착물이 팔면체 기하구조임을 제안하였다. X-선 회절 데이터로 부터 Cu(II) 착물이 사방정계(orthorhombic) 결정계, Ni(II), Co(II) 및 Fe(III) 착물이 단사계(monoclinic) 결정계 그리고 Mn(II) 착물이 정방정계(tetragonal) 결정계임을 제안하였다. 착물의 열적 행동(TG/DTA) 을 연구하였으며 Coats-Redfern 방법으로 반응속도 파라메터를 결정하였다. 리간드와 이들 금속 착물을 이용하여 Staphylococcus aureus 및 Escherichia coli에 대한 향균 활성과 Aspergillus Niger 및 Trichoderma 에 대한 살균 활성을 조사하였다.

• 한국결정성장학회지
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• 제17권4호
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• pp.156-159
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• 2007

본 연구에서는 장파장 UV 영역하에서 비교적 우수한 발광강도를 가지는 적색 형광체를 얻기 위하여 고상법으로 합성하여 발광특성을 관찰하였다. $SrAl_{12}O_{19}:Mn^{4+}$ 적색 형광체의 발광강도는 $Mn^{4+}$의 $^2E\to^4A_2$ 천이 때문에 643, 656, 666, 671 nm에서 4개의 sharp한 peak이 $600{\sim}700 nm $의 영역에서 발생하였으며, 여기 스펙트럼은 $250{\sim}550 nm$ 넓은 영역에서 338, 398, 468nm 3개의 peak이 발생하였다. 또한 $SrAl_{12}O_{19}:Mn^{4+}$에 0.67mol% MgO를 함유한 $SrAl_{12}O_{19}:Mn^{4+}$의 상대적인 발광강도는 $SrAl_{12}O_{19}:Mn^{4+}$ 보다 약 30% 정도 증가하였는데, 이러한 원인은 MgO가 첨가되어 $Al_2O_3$ 부분에 대체되어진 것으로 사료된다. 또한, 발광강도를 향상시키기 위하여 0.67mol% MgO를 함유한 $SrAl_{12}O_{19}:Mn^{4+}$ 시료에 $CaF_2$를 첨가하였다. 0.67mol% $CaF_2$와 0.67mol% MgO를 함유한 $SrAl_{12}O_{19}:Mn^{4+}$의 656nm에서의 상대적인 발광강도는 융제를 첨가하지 않은 $SrAl_{12}O_{19}:Mn^{4+}$보다 약 48% 이상 증가하였다.

• 전기학회논문지
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• 제67권4호
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• pp.543-548
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• 2018

Ferroelectric $Bi_4Ti_3O_{12}$ films were deposited on $SrTiO_3(100)$ and Si(100) substrate by using conductive $SrRuO_3$ films as underlayer, and their ferroelectric and electrical properties were investigated depending on crystal structure and orientation. C-axis oriented $Bi_4Ti_3O_{12}$ films were grown on well lattice-matched pseudo-cubic $SrRuO_3$ films deposited on $SrTiO_3(100)$ substrate, while random-oriented polycrystalline $Bi_4Ti_3O_{12}$ films were grown on $SrRuO_3$ films deposited on Si(100) substrate. The random-oriented polycrystalline film showed a good ferroelectric hysteresis property with remanent polarization ($P_r$) of $9.4{\mu}C/cm^2$ and coercive field ($E_c$) of 84.9 kV/cm, while the c-axis oriented film showed $P_r=0.64{\mu}C/cm^2$ and $E_c=47kV/cm$ in polarizaion vs electric field curve. The c-axis oriented $Bi_4Ti_3O_{12}$ film showed a dielectric constant of about 150 and lower thickness dependence in dielectric constant compared to the random-oriented film. Furthermore, the c-axis oriented $Bi_4Ti_3O_{12}$ film showed leakage current lower than that of the polycrystalline film. The difference of ferroelectric properties in two films was explained from the viewpoint of depolarization effect due to orientation of spontaneous polarization and layered crystal structure of bismuth-base ferroelectric oxide.