• 제목/요약/키워드: critical voltage

검색결과 614건 처리시간 0.026초

A New Method for Monitoring Local Voltage Stability using the Saddle Node Bifurcation Set in Two Dimensional Power Parameter Space

  • Nguyen, Van Thang;Nguyen, Minh Y.;Yoon, Yong Tae
    • Journal of Electrical Engineering and Technology
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    • 제8권2호
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    • pp.206-214
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    • 2013
  • This paper proposes a new method for monitoring local voltage stability using the saddle node bifurcation set or loadability boundary in two dimensional power parameter space. The method includes three main steps. First step is to determine the critical buses and the second step is building the static voltage stability boundary or the saddle node bifurcation set. Final step is monitoring the voltage stability through the distance from current operating point to the boundary. Critical buses are defined through the right eigenvector by direct method. The boundary of the static voltage stability region is a quadratic curve that can be obtained by the proposed method that is combining a variation of standard direct method and Thevenin equivalent model of electric power system. And finally the distance is computed through the Euclid norm of normal vector of the boundary at the closest saddle node bifurcation point. The advantage of the proposed method is that it gets the advantages of both methods, the accuracy of the direct method and simple of Thevenin Equivalent model. Thus, the proposed method holds some promises in terms of performing the real-time voltage stability monitoring of power system. Test results of New England 39 bus system are presented to show the effectiveness of the proposed method.

원통형 결함을 포함한 Ramp-Edge Junction의 수송특성 (Transport Properties of Ramp-Edge Junction with Columnar Defects)

  • Lee, C. W.;Kim, D. H.;Lee, T. W.;Sung, Gun-Yong;Kim, Sang-Hyeob
    • Progress in Superconductivity
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    • 제3권1호
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    • pp.65-69
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    • 2001
  • We measured the transport properties of$ YBa_2$$Cu_3$$O_{x}$ ramp-edge junction fabricated with interface-engineered barrier. The current-voltage characteristics show a typical resistively-shunted junction like behavior Voltage noise measurement revealed that the main source of the 1/f noise is the critical current and resistance fluctuations. The analysis of the noise data showed that the critical current fluctuations increase with temperature, whereas the resistance fluctuations are almost constant, and both fluctuations are almost correlated. The smaller magnitude of the critical current and resistance fluctuations seems to result from the columnar-deflects.s.

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High Performance OCB Panel Driven less than 5V for Multi-media Application

  • Chang, H.S.;Lee, C.H.;Ryu, J.J.;Kim, M.S.;Ahn, S.H.;Kim, K.H.;Kim, S.S.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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    • pp.914-917
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    • 2002
  • We have obtained high performance and low voltage driving OCB panel by reducing the critical voltage and retardation matching between liquid crystal layer and compensation films. The critical voltage in the panel has been minimized by flattening color filter layer and optimizing a rubbing process. In addition, an appropriate retardation of the film and LC layer has scanned to achieve low driving voltage and high transmission. The proto-type 17" WXGA OCB panel has demonstrated with less than 5V drive and over 80 degree for all viewing direction except for rubbing direction with over 90% of TN light efficiency.

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10-V 조셉슨접합 어레이의 제작 및 특성 (Fabrication and Characteristics of 10-V Josephson Junction Array)

  • 홍현권;박세일;김규태
    • Progress in Superconductivity
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    • 제4권1호
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    • pp.59-63
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    • 2002
  • 10-V Josephson junction array arranged in 8 parallel stripline paths was fabricated using self-aligning and reactive ion etching techniques. These techniques were introduced in detail with aim of obtaining high-quality junctions. The array has 18,184 Josephson junctions with the area of $12\mu\textrm{m}$$\times$$38\mu\textrm{m}$. The gap voltage and minimum critical current density were about 2.7 ㎷ and /$23 A\textrm{cm}^2$, respectively. And the critical current density and leakage current at 5 volt were about 27 $A/\textrm{cm}^2$ and $5\mu\textrm{A}$, respectively When operated in the frequency range of 76-88 ㎓, the away generated constant voltage steps up to 14-19 V. The step size near 10-V was more than 7 $\mu\textrm{A}$.

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고온초전도체의 DC 전압 - 전류 특성 (DC Voltage-Current Characteristics of a High Temperature Superconducting Conductor)

  • 류경우;이주영;마용호;최병주;박권배;오일성
    • 한국초전도ㆍ저온공학회논문지
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    • 제8권3호
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    • pp.49-53
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    • 2006
  • A high temperature superconductor (HTS) has been developed for power applications such as power cables, fault current limiters and superconducting magnetic energy storage devices. For such applications it is required to understand the DC voltage-current characteristic of the HTS. which is important in analyzing AC loss and flux flow loss quantitatively. In this work, we have experimentally investigated influence of several factors, e.g. critical current density. degradation and AC external magnetic field, on the DC voltage-current characteristic. The measured results have been discussed in engineering application point of view.

은 피복 BSCCO 선재 접합부의 선형전압성분 분석 (Analysis on Linear Voltage Components of Joints Ag-sheathed BSCCO tapes)

  • 황보훈;최세용;강준선;나완수;김정호;주진호
    • 한국초전도저온공학회:학술대회논문집
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    • 한국초전도저온공학회 2000년도 KIASC Conference 2000 / 2000년도 학술대회 논문집
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    • pp.166-169
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    • 2000
  • Usually, the critical current of jointed BSCCO tapes degrades quite a bit compared to the normal unjointed tape regions. It has been thought that the current redistribution around the jointed region is the main cause it. We experimentally found the linear voltage components around the jointed area, especially in the transition region, which suggests that the current redistribution around the jointed area is the main reason of the critical current degradations.

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크랙에 의한 고온 초전도체 테이프의 임계전류 특성변화 (The variation of critical current by the formation of crack in a high-temperature superconducting tape)

  • 박을주;설승윤
    • 한국초전도ㆍ저온공학회논문지
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    • 제4권1호
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    • pp.73-77
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    • 2002
  • The variation of critical current by the formation of crack in a high temperature super-conducting tape was studied by experimental and numerical analyses. The current-voltage relation of HTS tape is measured by the four-point measurement method. Numerical analyses are used to solve two dimensional heat conduction equation, considering the temperature distribution. By comparing current-voltage relation of experimental and numerical results, the validity of numerical method is verified.

Nb 조셉슨 접합의 열적 여기현상 (Thermal Excitations in Nb Josephson Junctions)

  • 김동호;황준석
    • 한국초전도저온공학회:학술대회논문집
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    • 한국초전도저온공학회 2003년도 학술대회 논문집
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    • pp.75-77
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    • 2003
  • We have measured the escape rates of the Nb Josephson junction from its zero-voltage state. The critical current measurements were carried out in repeatedly sweeping the current-voltage characteristics of the junction with a current ramp. From the distribution of the critical current the escape temperature was determined by applying the thermal activation model.

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Voltage and Frequency Tuning Methodology for Near-Threshold Manycore Computing using Critical Path Delay Variation

  • Li, Chang-Lin;Kim, Hyun Joong;Heo, Seo Weon;Han, Tae Hee
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제15권6호
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    • pp.678-684
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    • 2015
  • Near-threshold computing (NTC) is now regarded as a promising candidate for innovative power reduction, which cannot be achieved with conventional super-threshold computing (STC). However, performance degradation and vulnerability to process variation in the NTC regime are the primary concerns. In this paper, we propose a voltage- and frequency-tuning methodology for mitigating the process-variation-induced problems in NTC-based manycore architectures. To implement the proposed methodology, we build up multiple-voltage multiple-frequency (MVMF) islands and apply a voltage-frequency tuning algorithm based on the critical-path monitoring technique to reduce the effects of process variation and maximize energy efficiency in the post-silicon stage. Experimental results show that the proposed methodology reduces overall power consumption by 8.2-20.0%, compared to existing methods in variation-sensitive NTC environments.

Z-소스 교류 컨버터 토폴로지의 동적 전압 보상기 (Dynamic Voltage Restorer(DVR) with a Z-Source AC Converter Topology)

  • 임영철;정영국
    • 조명전기설비학회논문지
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    • 제24권9호
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    • pp.36-43
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    • 2010
  • This paper proposes a new type of voltage sag-swell compensator based on a Z-source AC-AC converter. The proposed topology employs a pulse width modulation (PWM) Z-source AC-AC converter along with a injection transformer. A safe commutation strategy is used to eliminate voltage spikes on switches without snubber circuit. During a voltage sag or swell, the proposed system controls the adding or missing voltage and maintains the rated voltage of sinusoidal waveform at the terminals of the critical loads. The proposed system is able to compensate 20[%] voltage swell and is also able to compensate 60[%] voltage sag. In order to control and detect the voltage sag and swell, the peak voltage detection method is applied. Also, the operating principles of the proposed system are described, and a circuit analysis is provided. Finally, PSIM simulation and experimental results are presented to verify the proposed concept and theoretical analysis.