• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1998.11a
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• pp.165-168
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• 1998

Re-oxidized nitrided oxides which have been investigated as alternative gate oxide for Metal- Oxide -Semiconductor field effect devices were grown by conventional furnace process using pure NH$_3$ and dry $O_2$ gas, and were characterized via a Fowler-Nordheim Tunneling electron injection technique. We studied Ig-Vg characteristics, leakage current, $\Delta$Vg under constant current stress from electrical characteristics point of view and TDDB from reliability point of view of MOS capacitors with SiO$_2$, NO, ONO dielectrics. Also, we studied the effect of stress temperature (25, 50, 75, 100, and 1$25^{\circ}C$). Overall, our results indicate that optimized re-oxidized nitrided oxide shows improved Ig-Vg characteristics, leakage current over the nitrided oxide and SiO$_2$. It has also been shown that re-oxidized nitrided oxide have better TDDB performance than SiO$_2$ while maintaining a similar temperature and electric field dependence. Especially, the Qbd is increased by about 1.5 times.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.415.1-415.1
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• 2014

Carrying out first-principles calculations, we study N-doped capped carbon nanotube (CNT) electrodes applied to DNA sequencing. While we obtain for the face-on nucleobase junction configurations a conventional conductance ordering where the largest signal results from guanine according to its high highest occupied molecular orbital (HOMO) level, we extract for the edge-on counterparts a distinct conductance ordering where the low-HOMO thymine provides the largest signal. The edge-on mode is shown to operate based on a novel molecular sensing mechanism that reflects the chemical connectivity between N-doped CNT caps that can act both as electron donors and electron acceptors and DNA functional groups that include the hyperconjugated thymine methyl group[1].

• Transactions on Electrical and Electronic Materials
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• v.2 no.2
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• pp.16-20
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• 2001

Optoelectronic characteristics of the superlattice diode as a function of deposition temperature and annealing conditions have been studied. The multilayer nanocrystalline silicon/adsorbed oxygen (nc/Si/O) superlattice formed by molecular beam epitaxy (MBE) system. Experimental results showed that deposition temperature of 550$^{\circ}C$, followed by hydrogen annealing leads to best results, in terms of optical photoluminescence (PL) and electrical current-voltage (I-V) characteristics. Consequently, the experimental results of multilayer Si/O superlattic device showed the stable photoluminescence and good insulating behavior with high breakdown voltage. This is very useful promise for Si-based optoelectronic devices, and can be readily integrated with conventional silicon ULSI processing.

• Proceedings of the KSR Conference
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• 2004.10a
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• pp.1162-1167
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• 2004

From the early 1980's, the New Austrian Tunnelling Method (NATM) has been developed as a one of the standard tunneling method in Korea. Owing to the results of many researches, the practical problems of shotcrete has been improved for a last decade. However, the excess amount of rebound still remains one of the critical problems in shotcrete technology. In order to improve for this rebound problem, recently developed cement mineral accelerator has been successfully applied to several NATM tunnels in Korea. An experimental investigation was carried out in order to verify the rebound characteristics of wet-mix Steel Fiber Reinforced Shotcrete (SFRS) with powder types cement mineral accelerator. Mortar setting test, SEM analysis, bonding test under spring water condition and rebound test were conducted. From the result, wet-mix SFRS with cement mineral acelerator exhibited excellent bonding characteristics even spring water condition and less rebound ratio compared to the conventional liquid accelerator.

• Journal of Korean Tunnelling and Underground Space Association
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• v.20 no.6
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• pp.1073-1090
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• 2018

Since the domestic utility tunnels were built mainly in the development project of the new city, they are all in the form of cut-and-cover box tunnel. But, in the case of overseas construction of utility tunnels for existing urban areas, the bored tunnel types are mainly adopted. It is reasonable to install bored tunnels in a downtown area because it is difficult to block the roads or install bypass roads due to heavy traffic and civil complaints. In order to activate the utility tunnels in bored type, it is necessary to secure optimized cross-sectional design technology considering the optimal supplying capacity and mutual influencing factors (Thermal Interference, electrolytic corrosion, efficiency of the maintenance, etc.) of utilities (power cables, telecommunication cables, water pipes, etc.). The optimal cross-section design method for bored utility tunnels is ultimately to derive the optimal arrangement technique for the utilities. In order to develop the design methods, firstly, the cases of tunnel cross-section (Shield TBM, Conventional Tunneling) in overseas shall be investigated to analyze the characteristics of the installation of utilities in the section and installation of auxiliary facilities, It is necessary to sort out and analyze the criteria related to the inner cross-section design (arrangement) presented in the standards and guidelines.

• Journal of the Korean Geotechnical Society
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• v.21 no.3
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• pp.19-25
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• 2005

A tunnel that uses the RMR method or the Q-system is called a 'modem tunnel' because the New Austrian Tunneling Method (NATM) is not employed, even though shotcrete and rock bolts are used as support. It is known that the modem tunnel, which is supported by shotcrete, is basically different from the conventional tunnel, which is supported by steel ribs. In order to preserve the load-carrying capacity of the rock mass, loosening and excessive rock deformations must be minimized. Although it is known that this can be achieved by applying shotcrete in the case of the modem tunnel, this has not been clearly demonstrated. In order to inspect the distinctions between the conventional tunnel and the modern tunnel, their support characteristics and the rock loads of the rock mass classifications are compared. Terzaghi's rock load classification was used as the conventional tunnel's representative rock mass classification. The RMR method and the Q-system were adopted as the modem tunnel's representative rock mass classification. The study's results show that the load-carrying capacity of shotcrete, when used as the main support in the modern tunnel, is greater than the load-capacity of the steel ribs used in the conventional tunnel. Because it has been verified that the rock loads of their rock mass classifications are not different, then, according to the rock mass classifications, the load-carrying capacity of the rock mass of the modern tunnel, which uses shotcrete, is not greater than that of the conventional tunnel.

• Journal of Magnetics
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• v.9 no.1
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• pp.9-12
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• 2004

We have investigated sintering effects on Fe/Mo ordering and magnetoresistance (MR) in double perovskite-reflection lines due to $Sr_2FeMoO_6$ (SFMO). Polycrystalline samples have been prepared by the conventional solid-state reaction by sintering in a stream of 5% $H_2/Ar$ gas. All samples are single phase and exhibit a series of superstructurecation ordering at Fe and Mo sites. As sintering temperature increases from 900 to $1300^{\circ}C$, the degree of Fe/Mo ordering increases from 82 to 92%, magnetization (15 K, 7 kOe) increases from 1.6 to 2.7 ${\mu}_B/f.u.,$ and Curie temperature increases at a rate of 4.3 K/% with the increase of Fe/Mo ordering ratio. The magnitude of MR measured at 5 K is 19% for sample prepared at $1000^{\circ}C$ with magnetic fields of 7 kOe. The observed MR is proportional to the square of magnetization indicating that the MR feature in SFMO is explained by the spin-polarized tunneling at grain boundaries.

• Geomechanics and Engineering
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• v.22 no.6
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• pp.497-507
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• 2020

This paper presents the results of a three-dimensional numerical investigation into the effect of new tunnel construction on structural performance of existing tunnel lining. A three-dimensional finite difference model, capable of modelling the tunnel construction process, was adopted to perform a parametric study on the spatial variation of new tunnel location with respect to the existing tunnel with emphasis on the plan crossing angle of the new tunnel with respect to the existing tunnel and the vertical elevation of the new tunnel with respect to the existing one. The results of the analyses were arranged so that the effect of new tunnel construction on the lining member forces and stresses of the existing tunnel can be identified. The results indicate that when a new tunnel underpasses an existing tunnel, the new tunnel construction imposes greater impact on the existing tunnel lining when the two tunnels cross at an acute angle. Also shown are that the critical plan crossing angle of the new tunnel that would impose greater impact on the existing tunnel depends on the relative vertical location of the new tunnel with respect to the existing one, and that the overpassing new tunnel construction scenario is more critical than the underpassing scenario in view of the existing tunnel lining stability. Practical implications of the findings are discussed.

• 제어로봇시스템학회:학술대회논문집
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• 2005.06a
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• pp.212-214
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• 2005

The charge-pump circuit which is used to generate higher voltage than the available supply voltage has wide applications such as the flash memory of EEPROM Because the demand for high voltage comes from physical mechanism such as the oxide tunneling, the required pumped voltage cannot be scaled as the power supply voltage is scaled. Therefore, an efficient charge-pump circuit that can achieve high voltage from the available low supply voltage is essential. A new Analog Switch p-well CMOS charge pump circuit without the MOS device body effect is processed. By improve the structure of the circuit's transistors to reduce the threshold voltage shift of the devices, the threshold voltage of the device is kept constant. So, the circuit electrical characteristics are higher output voltage within a shorter time than the conventional charge pump. The propose analog switch CMOS charge pump shows compatible performance of the ideal diode or Dickson charge pump.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.262-263
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• 2008

The Metal-Insulator-Silicon (MIS) capacitors with $SiO_2$ and high-k dielectric were investigated. The high-k dielectrics were obtained by atomic layer deposit (ALD) system. The electrical characteristics were investigated by measuring the current-voltage (I-V) characteristics. The conduction mechanisms were analyzed by using the Fowler-Nordheim (FN) plot and Direct Tunneling (DT) plot. As a result, the MIS capacitors with high-k dielectrics have lower leakage current densities than conventional tunnel-barrier with $SiO_2$ dielectrics.