• Title/Summary/Keyword: controlled switching

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SERVICE RESTORATION Of POWER DISTRIBUTION SYSTEMS BASED ON GROUPING (정전 구역 분할에 의한 배전 계통 복구)

  • Lee, Seung-Jae;Kim, Kuk-Hun;Lee, Joo-Kwang
    • Proceedings of the KIEE Conference
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    • 1992.07a
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    • pp.169-171
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    • 1992
  • In an automated power distribution systems, the fault situation is controlled from the control center through remotely-controlled sectionalizing switches. In this paper, the service restoration strategy which can yield the minimal switching actions and constraint checking is proposed and an expert system which generates the appropriate switching actions is described.

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Current Controlled Class-D Stereo Amplifier Using Three-Phase Full Bridge (3상 풀 브리지를 이용한 전류제어형 D급 스테레오 앰프)

  • 송권일;윤인국;오덕진;김희준
    • Proceedings of the IEEK Conference
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    • 2000.06e
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    • pp.13-16
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    • 2000
  • This paper presents a simple class-D stereo amplifier using 3-phase full bridge circuit configurations which is controlled by a new current control switching method. Although this class-D amplifier has an only one current control loop with the proposed switching method, a good performance can be obtained. In this paper, a strategy for driving stereo signal amplifier with 3-phase full bridge is discussed. With the experimental results, usefulness of the proposed amplifier is confirmed.

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A NEW CURRENT CONTROL FOR 3-LEVEL INVERTER

  • Lee, Byung-Song;Cho, Yun-Ok;Park, Hyun-June;Kim, Myung-yong;Byun, Yeun-Sub;Kim, Yun-Ho;Lee, Jae-Hak
    • Proceedings of the KIPE Conference
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    • 1998.10a
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    • pp.357-361
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    • 1998
  • A new current controlled PWM technique for a 3-level inverter has been proposed and described in the paper. The proposed current control has the simple structure without needing to calculate the switching angles of the voltage vectors. The output in the proposed inverter contains less harmonic content than that of a conventional current controlled PWM controller, since the current control can be applied to the 3-level inverter. In addition, the proposed current controlled PWM technique has lower switching frequency than that of a conventional current controlled PWM technique at the same current limit. The control method and the performance for a proposed 3-level inverter has been discussed and investigated by the computer simulation.

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An Efficiency Improvement Method for Single-phase Boost Converter by Reducing Switching Loss (스위칭 손실 감소에 의한 단상 부스트 컨버터의 효율개선)

  • Kim Jong-Su;Oh Sae-Gin;Park Keun-Oh
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.10 no.1
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    • pp.96-103
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    • 2006
  • This paper proposes a new technique for improving the efficiency of single phase high frequency switch mode boost converter. This converter includes an additional boost converter that follows the main hish frequency switching device. The additional converter, which is controlled at lower frequencies, bypasses almost all the current in the main switch and the high frequency switching loss is greatly reduced. Both switching devices are controlled by a simple method; each controller consists of a one-shot multivibrator, a comparator and an AND gate, and the maximum switching frequency can be limited without any clock generator. The converter works cooperatively in high efficiency and acts as though it were a conventional high frequency switch mode converter with one switching device. This paper describes the proposed converter configuration, design, and discusses the steady state performance concerning the switching loss reduction and efficiency improvement. and the proposed method is verified by computer simulation.

A Study on the Efficiency Improvement of Boost Converter for Power Factor Correction (PFC용 부스트 컨버터의 효율 개선에 관한 연구)

  • Jeon, Nae-Suck;Jeon, Su-Kyun;Lee, Sung-Geun;Kil, Guyng-Suk;Kim, Yoon-Sik
    • Proceedings of the KIEE Conference
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    • 2002.07b
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    • pp.1094-1096
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    • 2002
  • A new technique for improving the efficiency of single-phase high-frequency boost converter is proposed. This converter includes an additional low-frequency boost converter which is connected to the main high-frequency switching device in parallel. The additional converter is controlled at lower frequency. Most of the current flows in the low-frequency switch and so, high-frequency switching loss is greatly reduced accordingly. Both switching device are controlled by a simple method; each controller consists of a comparator, a frequency generator and an error amplifier. The converter works cooperatively in high efficiency and acts as if it were a conventional high-frequency boost converter with one switching device, The proposed method is verified by simulation and experiment. This paper describes the converter configuration and design, and discusses the steady-state performance concerning the switching loss reduction and efficiency improvement.

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A Study on Time-Varying Sliding Regime of VSC System (가변구조제어계의 시변 슬라이딩 레짐에 관한 연구)

  • Kim, Joong-Wan;Lee, Man-Hyung
    • Journal of the Korean Society for Precision Engineering
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    • v.6 no.2
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    • pp.30-39
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    • 1989
  • Variable structure control (VSC) systems control the state vectors using sliding regime (SR) constructed switching logic, switching plane and control law. Saturation function switching logic is used to improve the drawback which occurs in traditional sign function switching logic. Switching plane with time-varying parameter is proposed to improve the drawback which occurs in switching plane with constant parameter and it is suggested the control law which has time-varying parameter. The stability of VSC system controlled by proposed time-varying SR is discussed, and the good control behavior was shown through computer simulation using proposed SR.

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CoolSiCTM SiC MOSFET Technology, Device and Application

  • Ma, Kwokwai
    • Proceedings of the KIPE Conference
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    • 2017.07a
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    • pp.577-595
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    • 2017
  • ${\bullet}$ Silicon Carbide (SiC) had excellent material properties as the base material for next generation of power semiconductor. In developing SiC MOSFET, gate oxide reliability issues had to be first overcome before commercial application. Besides, a high and stable gate-source voltage threshold $V_{GS(th)}$ is also an important parameter for operation robustness. SiC MOSFET with such characteristics can directly use existing high-speed IGBT gate driver IC's. ${\bullet}$ The linear voltage drop characteristics of SiC MOSFET will bring lower conduction loss averaged over full AC cycle compared to similarly rate IGBT. Lower switching loss enable higher switching frequency. Using package with auxiliary source terminal for gate driving will further reduce switching losses. Dynamic characteristics can fully controlled by simple gate resistors. ${\bullet}$ The low switching losses characteristics of SiC MOSFET can substantially reduce power losses in high switching frequency operation. Significant power loss reduction is also possible even at low switching frequency and low switching speed. in T-type 3-level topology, SiC MOSFET solution enable three times higher switching freqeuncy at same efficiency.

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A Light Incident Angle Stimulated Memristor Based on Electrochemical Process on the Surface of Metal Oxide

  • Park, Jin-Ju;Yong, Gi-Jung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.174-174
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    • 2014
  • Memristor devices are one of the most promising candidate approaches to next-generation memory technologies. Memristive switching phenomena usually rely on repeated electrical resistive switching between non-volatile resistance states in an active material under the application of an electrical stimulus, such as a voltage or current. Recent reports have explored the use of variety of external operating parameters, such as the modulation of an applied magnetic field, temperature, or illumination conditions to activate changes in the memristive switching behaviors. Among these possible choices of signal controlling factors of memristor, photon is particularly attractive because photonic signals are not only easier to reach directly over long distances than electrical signal, but they also efficiently manage the interactions between logic devices without any signal interference. Furthermore, due to the inherent wave characteristics of photons, the facile manipulation of the light ray enables incident light angle controlled memristive switching. So that, in the tautological sense, device orienting position with regard to a photon source determines the occurrence of memristive switching as well. To demonstrate this position controlled memory device functionality, we have fabricated a metal-semiconductor-metal memristive switching nanodevice using ZnO nanorods. Superhydrophobicity employed in this memristor gives rise to illumination direction selectivity as an extra controlling parameter which is important feature in emerging. When light irradiates from a point source in water to the surface treated device, refraction of light ray takes place at the water/air interface because of the optical density differences in two media (water/air). When incident light travels through a higher refractive index medium (water; n=1.33) to lower one (air; n=1), a total reflection occurs for incidence angles over the critical value. Thus, when we watch the submerged NW arrays at the view angles over the critical angle, a mirror-like surface is observed due to the presence of air pocket layer. From this processes, the reversible switching characteristics were verified by modulating the light incident angle between the resistor and memristor.

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Analysis and Specifications of Switching Frequency in Parallel Active Power Filters Regarding Compensation Characteristics

  • Guopeng, Zhao;Jinjun, Liu
    • Journal of Power Electronics
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    • v.10 no.6
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    • pp.749-761
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    • 2010
  • The switching frequency of a power device is a very important parameter in the design of a parallel active power filter (PAPF), but so far, very little discussion has been conducted on it in a quantitative manner in previous publications. In this paper, an extensive analysis on the effects of the switching frequency on the performance of a PAPF is made, and a specification of the switching frequency values with different compensation results is presented. A first-order inertia element and a second-order oscillation element are considered as approximate models of a PAPF, respectively. The compensation characteristic for each order of harmonic current is obtained at different switching frequencies. Then, the THDs of each model for the system loads of a rectifier with resistance and inductance loads are proposed. The compensation results of a PAPF controlled as a first-order inertia element are better than those of a PAPF controlled as a second-order oscillation element. With two types of system loads which are rectifier with resistance and inductance loads and rectifier with resistance, inductance and capacitance loads, the THDs of the source current after compensation are presented with different switching frequencies. The compensation characteristics for the most widely used digital control system are investigated. The situation with an analog control is the theoretical characteristic and it is the best situation. The compensation characteristic of the digital control is worse than the compensation characteristic of the theoretical characteristic. Based on these analyses, the specifications of compensation characteristics with different switching frequencies are quite straightforward. Finally, a practical design example is studied to verify the application.

Single Chip Processor Based Implementation of a Current-Controlled or Pulse-Width Modulated Series Resonant Converter (싱글 칩 프로세서를 이용한 전류제어형 직렬 공진형 컨버터)

  • Kim, Yoon-Ho;Yoon, Byung-Do;Kim, Jeng-Bin
    • Proceedings of the KIEE Conference
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    • 1990.11a
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    • pp.332-335
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    • 1990
  • There are several methods in controlling resonant converters to regulate the output with low switching losses. In this paper, Pulse-width modulation method or current controlled method is applied to regulate the output with low switching losses. In digital implementation of resonant converter systems, the speed of the applied processor is very critical since the switching frequency is very high. Thus the various possible candidates of microprocessors are evaluated for the implementation of resonant converter systems. Then too design methods and techniques are desioribed when single chip processor is used to simplify hardware requirements.

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