• 제목/요약/키워드: continuity equation

검색결과 384건 처리시간 0.026초

동축 원통형 코로나 방전 플라즈마의 해석적 모델 (An Analytical Model of Corona Discharge Plasmas in Coaxial Cylindrical Reactor)

  • 고욱희
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제53권3호
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    • pp.157-161
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    • 2004
  • We present a simple analytical expression of plasma density by making use of the electron density equation to study the dynamic behavior of the corona discharge plasma. It assumes that a specified voltage profile is fed through the inner conductor of the reactor chamber consisting of two coaxial conducting cylinders. The analytical description is based on the electron continuity equation with ionization and attachment by electrons. It is found that the electron density profile calculated between two coaxial cylindrical electrodes depends very sensitively on the Profile of applied voltage. The analytical expression of plasma density and its generation will provide important scaling laws in the corona discharge plasma.

연안역 구조물 주위에서의 해빈류의 수치해석에 관한 연구 (A Study on the Numerical Model of Wave Induced Current around Nearshore Structure)

  • 민병형;이상화;김인철
    • 한국해양공학회지
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    • 제5권1호
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    • pp.55-63
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    • 1991
  • This study is to predict accurately the wave induced current accuring by the radiation stress which acts as the driving force around Nearshore structure. For the wave induced current, the depth integrated and time averaged governing equation of an unsteady nonlinear form is derived from the continuity and momentum equation of an incompressible fluid. Numerical solutions are obtained by a finite difference method for the governing equation. In the vicinity of a structure, computed flow patterns show good agreement with the hydraulic experimental data. The numerical results obtained by neglecting the convective term show a large change of alongshore and offshore current.

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유한요소법에 의한 GaAs MESFET소자의 해석 (The Analysis of GaAs NESFET Device by Finite Element Method)

  • Song, Nag-Un
    • 대한전자공학회논문지
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    • 제25권1호
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    • pp.33-41
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    • 1988
  • In this work, two-dimensional finite element method code is developed to characterize GaAs MESFET devices. Here, two coupled equations, i.e., Poisson equation and current continuity equation, are solved iteratively by Gummel's scheme. The energy transport equation is incorporated with these to include the temperature information. By this method, the GaAs MESFET device is analyzed by calculating the potential and electron concentration distribution. from these the I-V characteristics and other device parametersare obtained and discussed. It is comfirmed that this method can be effectively used in the device level simulation and characterization and can be extended to the small and large signal analysis of the device.

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Wave Excitations on a Body in a Bifurcated Three-Dimensional Channel

  • Cho Song Pyo;Kyoung Jo hyun;Bai Kwang June
    • 한국전산유체공학회:학술대회논문집
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    • 한국전산유체공학회 2003년도 The Fifth Asian Computational Fluid Dynamics Conference
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    • pp.191-192
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    • 2003
  • A numerical method for a wave diffraction problem in three-dimensional channels is developed. The physical models are various shapes of channel connected to the open sea. When a ship or an offshore structure is moored in various configurations of channel connected to an open sea, the prediction of the hydrodynamic force exerting on the moored ship could be important for the prediction of its motion. It is assumed that the fluid is inviscid and incompressible and its motion is irrotational. From the continuity equation, the Laplace equation can be obtained as the governing equation. The surface tension at free surface is neglected, and wave amplitude is assumed to be small compared to the wave length. Then the free surface condition can be linearized. The numerical method used here is the localized finite element method based on a variational formulation

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2차원 채널유동에서의 액적 변형에 대한 수치해석적 연구 (STUDY ON THE DEFORMATION OF DROPLETS IN A TWO-DIMENSIONAL CHANNEL FLOW)

  • 정성록;조명환;최형권;유정열
    • 한국전산유체공학회:학술대회논문집
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    • 한국전산유체공학회 2011년 춘계학술대회논문집
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    • pp.6-9
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    • 2011
  • In this study, the two-phase incompressible flow in two-dimensional channel considering the effect of surface tension is simulated using an improved level-set method. Quadratic element is used for solving the continuity and Navier-Stokes equations to avoid using an additional pressure equation, and Crank-Nicholson scheme and linear element are used for solving the advection equation of the level set function. Direct approach method using geometric information is implemented instead of the hyperbolic-type partial differential equation for the reinitializing the level set function. The benchmark test case considers various arrays of defomable droplets under different flow conditions in straight channel. The deformation and migration of the droplets are computed and the results are compared very well with the existing studies.

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디바이스 시뮬레이션 기술을 이용한 미세 n-MOSFET의 비등온 비형형장에 있어서의 특성해석 (Simulation of Miniaturized n-MOSFET based Non-Isothermal Non-Equilibrium Transport Model)

  • 최원철
    • 한국산업융합학회 논문집
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    • 제4권3호
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    • pp.329-337
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    • 2001
  • This simulator is developed for the analysis of a MOSFET based on Thermally Coupled Energy Transport Model(TCETM). The simulator has the ability to calculate not only stationary characteristics but also non - stationary characteristics of a MOSFET. It solves basic semiconductor devices equations including Possion equation, current continuity equations for electrons and holes, energy balance equation for electrons and heat flow equation, using finite difference method. The conventional semiconductor device simulation technique, based on the Drift-Diffusion Model (DDM), neglects the thermal and other energy-related properties of a miniaturized device. I, therefore, developed a simulator based on the Thermally Coupled Energy Transport Model (TCETM) which treats not only steady-state but also transient phenomena of such a small-size MOSFET. In particular, the present paper investigates the breakdown characteristics in transient conditions. As a result, we found that the breakdown voltage has been largely underestimated by the DDM in transient conditions.

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NUMERICAL IMPLEMENTATION OF THE TWO-DIMENSIONAL INCOMPRESSIBLE NAVIER-STOKES EQUATION

  • CHOI, YONGHO;JEONG, DARAE;LEE, SEUNGGYU;KIM, JUNSEOK
    • Journal of the Korean Society for Industrial and Applied Mathematics
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    • 제19권2호
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    • pp.103-121
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    • 2015
  • In this paper, we briefly review and describe a projection algorithm for numerically computing the two-dimensional time-dependent incompressible Navier-Stokes equation. The projection method, which was originally introduced by Alexandre Chorin [A.J. Chorin, Numerical solution of the Navier-Stokes equations, Math. Comput., 22 (1968), pp. 745-762], is an effective numerical method for solving time-dependent incompressible fluid flow problems. The key advantage of the projection method is that we do not compute the momentum and the continuity equations at the same time, which is computationally difficult and costly. In the projection method, we compute an intermediate velocity vector field that is then projected onto divergence-free fields to recover the divergence-free velocity. Numerical solutions for flows inside a driven cavity are presented. We also provide the source code for the programs so that interested readers can modify the programs and adapt them for their own purposes.

n-MOSFET 정전기 방전 분석 (Electrostatic Discharge Analysis of n-MOSFET)

  • 차영호;권태하;최혁환
    • 한국전기전자재료학회논문지
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    • 제11권8호
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    • pp.587-595
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    • 1998
  • Transient thermal analysis simulations are carried out using a modeling program to understand the human body model HBM ESD. The devices were simulated a one-dimensional device subjected to ESD stress by solving Poison's equation, the continuity equation, and heat flow equation. A ramp rise with peak ESD voltage during rise time is applied to the device under test and then discharged exponentially through the device. LDD and NMOS structures were studied to evaluate ESD performance, snap back voltages, device heating. Junction heating results in the necessity for increased electron concentration in the space charge region to carry the current by the ESD HBM circuit. The doping profile adihacent to junction determines the amount of charge density and magnitude of the electric field, potential drop, and device heating. Shallow slopes of LDD tend to collect the negative charge and higher potential drops and device heating.

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Numerical simulation of cavitating flow past axisymmetric body

  • Kim, Dong-Hyun;Park, Warn-Gyu;Jung, Chul-Min
    • International Journal of Naval Architecture and Ocean Engineering
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    • 제4권3호
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    • pp.256-266
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    • 2012
  • Cavitating flow simulation is of practical importance for many engineering systems, such as marine propellers, pump impellers, nozzles, torpedoes, etc. The present work has developed the base code to solve the cavitating flows past the axisymmetric bodies with several forebody shapes. The governing equation is the Navier-Stokes equation based on homogeneous mixture model. The momentum is in the mixture phase while the continuity equation is solved in liquid and vapor phase, separately. The solver employs an implicit preconditioning algorithm in curvilinear coordinates. The computations have been carried out for the cylinders with hemispherical, 1-caliber, and 0-caliber forebody and, then, compared with experiments and other numerical results. Fairly good agreements with experiments and numerical results have been achieved. It has been concluded that the present numerical code has successfully accounted for the cavitating flows past axisymmetric bodies. The present code has also shown the capability to simulate ventilated cavitation.

FDM을 이용한 층유유동장내에서 오염물질확산에 관한 연구 (Numerical Prediction of Contaminant Dispersion within the Laminar Flow Field using FDM)

  • 김양술
    • 한국안전학회지
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    • 제10권2호
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    • pp.56-63
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    • 1995
  • A simulation of contaminant dispersion in a water reservoir has been done using 2-D finite difference method(FDM). The steady state velocity field of the reservoir was computed using stream function-vorticity formulation of Wavier-Stokes equation and continuity equation. Based on the computed steady state velocity field, the transient convective diffusion equation of the contaminant dispersion was computed. For the 1m$\times$1m reservoir model with inlet and outlet attached, it was shown that the center of circulation located toward right. For the numerical values of v =0.01($\textrm{cm}^2$/s) and D=0.6($\textrm{cm}^2$/s) and the flow of 50($\textrm{cm}^3$/s ), it was determined that the outflow had to be shut down in 18 seconds to prevent from severe pollution. Also the required time was computed to be 6 seconds for the inflow of 100 ($\textrm{cm}^3$/s). The result of this study is considered, hopefully, to be useful for the design of the water reservoir systems that are the subjects to various contamination.

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