• 한국건축시공학회지
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• 제14권6호
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• pp.505-513
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• 2014

본 연구에서는 전기화학적인 시험 및 CASS Test(염수분무시험)을 실시하여 중방식도장 시험체와 용융아연도금 시험체, Zn-Al 시험체와의 비교를 통해 Zn-Sn 금속용사의 방식 성능을 평가하였다. 시험 결과, 전기화학 시험을 통하여 Zn-Sn / Zn-Al 상온금속용사 시스템 공법의 방식원리는 방식전위에 의하여 확보되는 것을 확인하였으며 강구조물의 방식 공법으로서 상온금속용사 공법은 용융아연도금 공법과 중방식 도장공법과 비교하여 매우 우수한 방식성능을 가지고 있는 것이 CASS 시험을 통하여 검증되었다. 특히 Zn-Sn 금속용사와 Zn-Al 금속용사를 비교해본 결과 그 방식성이 현저하게 차이가 있지는 않았으나 Zn-Sn(65:35) 비율의 시험체가 가장 우수하였다. 또한 중방식 도장은 손상된 부분에서 현저하게 녹이 발생하고 도막이 박리되지만, Zn-Sn / Zn-Al 상온금속용사 시스템 공법은 갈바닉 희생방식에 의하여 매우 높은 부식 방지 특성을 가지고 있음을 확인 하였다.

• Current Photovoltaic Research
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• 제3권2호
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• pp.54-60
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• 2015

ZnSnO thin films were deposited by atomic layer deposition (ALD) process using diethyl zinc ($Zn(C_2H_5)_2$) and tetrakis (dimethylamino) tin ($Sn(C_2H_6N)_4$) as metal precursors and water vapor as a reactant. ALD process has several advantages over other deposition methods such as precise thickness control, good conformality, and good uniformity for large area. The composition of ZnSnO thin films was controlled by varying the ratio of ZnO and $SnO_2$ ALD cycles. The ALD ZnSnO film was an amorphous state. The band gap of ZnSnO thin films increased as the Sn content increased. The CIGS solar cell using ZnSnO buffer layer showed about 18% energy conversion efficiency. With such a high efficiency with the ALD ZnSnO buffer and no light soaking effect, AlD ZnSnO buffer mighty be a good candidate to replace Zn(S,O) buffer in CIGSsolar cells.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.85.2-85.2
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• 2010

$Cu_2ZnSnSe_4$ (CZTSe) is one of candidate to alternate $Cu(In,Ga)Se_2$ as solar absorber material for solar cell. The expensive elements of In and Ga are replaced by Zn and Sn, respectively to lower the material cost. In this study we fabricated CZTSe thin film by selenization of single precursor layer consisted metallic constituent. Precursor compositions ratio were selected to have Cu-poor and Zn-rich content and prepared by RF magnetron sputtering. Thermal processing was applied to introduce selenium into as-deposited films at temperatures ranging from 350 to 500 for time up to 120 minutes. Single precursor films showed amorphous structure and consist of individual elements of Cu, Zn, and Sn. It was confirmed by XRD analysis that synthesis of CZTSe compound is occurred from lower temperature process, although concurrently additional phases such as binary cooper selenides are also existed. The quality of CZTSe crystal was improved as temperature increased. We also investigated the optical and electrical properties of as-selenized CZTSe as well.

• 한국세라믹학회지
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• 제28권11호
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• pp.897-907
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• 1991

This study was conducted to research the formation and the color development of CoO-ZnO-Fe2O3-TiO2-SnO2 system for the purpose of synthesizing the spinel pigments which are stable at high temperature. After preparing CoO-ZnO-Fe2O3, in which CoO causes the color, as a basic composition, $\chi$CoO.(1-$\chi$)ZnO.Fe2O3 system, $\chi$CoO.(1-$\chi$)ZnO.TiO2 system and $\chi$CoO.(1-$\chi$)ZnO.SnO2 system were prepared with $\chi$=0, 0.2, 0.5, 0.7, 1.0 mole ratio respectively. The manufacturing was carried out at 128$0^{\circ}C$ for 90 minutes. These specimens were analyzed by the reflectance measurement and the X-ray diffraction analysis and the results were summarized as follows: 1. All of the specimens formed the spinel structure and were colored with stable yellow or blue. 2. As the content of CoO and Fe2O3 in the specimens being increased, the reflectance of each specimen was measured becoming lower and the colors were changed from yellow to greyish blue and from blue to dark blue. 3. As the substituting amount of Co2+ ion for Zn2+ ion in $\chi$CoO-ZnO-TiO2-SnO2 system being increased, the colors were changed from blue to greyish blue. The colors were changed from yellow to grayish green owing to the tetrahedral Co2+ ions being increased, the octahedral Co2+ ions being decreased with increasing the amount of Sn4+ ions. 4. CoO-ZnO-Fe2O3-TiO2-SnO2 system, in which Zn2+ was substituted with Co2+ and Fe3+ was substituted with Ti4+ and Sn4+, easily formed the spinel structure without regard to the amount of substitution or the ion owing to the selectivity of the coordination number: 4 of Zn2+, 4 of Co2+, 6 of Fe3+ or 6 of Ti4+ and Sn4+.

• 보존과학연구
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• 통권6호
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• pp.121-196
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• 1985

Atomic absorption spectrophotometer was used for analyzing each 10elements(Cu, Pb, Sn, Zn, Sb, Fe, Ni, Ag, Co and Mn)on 64 Chinese coinsre covered from Shinan seabed sunken ship. The results show that Cu, Pb and Sn were found to be a major elements consisting of coins and its composition ratio was 6 to 2 to 1.The composition of trace elements on coins was classified 3 levels : Sb, Fe and Zn(0.02%-2.2%), Ag, Ni, and Co(50 ppm-5500 ppm) and Mn(Trace). Theam ount of major elements, Cu and Sn were decreased while increased in Pbby the passage of ages (10th - 13th century) in China. There seems to be no systematic compositional change in major elements but content in trace elements was confirmed to increase with age.

• Current Photovoltaic Research
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• 제11권3호
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• pp.67-74
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• 2023

The earth-abundant element-based Cu₂ZnSn(S,Se)₄ (CZTSSe) thin film solar cells (TFSCs) have attracted greater attention in the photovoltaic (PV) community due to their rapid development in device power conversion efficiency (PCE) >13%. In the present work, we demonstrated the fine-tuning of the bandgap in the CZTSSe TFSCs by altering the sulfur (S) to the selenium (Se) chalcogenide ratio. To achieve this, the CZTSSe absorber layers are fabricated with different S/(S+Se) ratios from 0.02 to 0.08 of their weight percentage. Further compositional, morphological, and optoelectronic properties are studied using various characterization techniques. It is observed that the change in the S/(S+Se) ratios has minimal impact on the overall Cu/(Zn+Sn) composition ratio. In contrast, the S and Se content within the CZTSSe absorber layer gets altered with a change in the S/(S+Se) ratio. It also influences the overall absorber quality and gets worse at higher S/(S+Se). Furthermore, the device performance evaluated for similar CZTSSe TFSCs showed a linear increase and decrease in the open circuit voltage (V_oc) and short circuit current density (J_sc) of the device with an increasing S/(S+Se) ratio. The external quantum efficiency (EQE) measured also exhibited a linear blue shift in absorption edge, increasing the bandgap from 1.056 eV to 1.228 eV, respectively.

• 한국재료학회지
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• 제24권1호
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• pp.43-47
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• 2014

NiO-doped hibonite pigments were synthesized by the solid state method to get stabilized blue color pigment in both oxidation and reduction atmospheres. Optimum substitution condition with NiO for hibonite blue pigment was investigated. Experimental results were comparable to those of previous cobalt-minimization studies performed with other phosphate- or oxide-based cobalt-containing ceramic pigments (having olivine ($Co_2SiO_4$), spinel ($CoAl_2O_4$), or with co-doped willemite ($(Co,Zn)_2SiO_4$) structures). Composition was designed varying the NiO molar ratio increasing with $SnO_2$. The optimum substitution content is 0.93 mole NiO with 0.75mole $SnO_2$. The characteristics of the synthesized pigment were analyzed by XRD, Raman spectroscopy, SEM, and UV-vis. Synthesized pigment was applied to a lime-barium glaze with 10 wt% each and fired at an oxidation atmosphere of $1250^{\circ}C/1h$ and a reducing atmosphere $1240^{\circ}C/1h$. Blue color was obtained with $L^*a^*b^*$ values at 43.39, -6.78, -18.20 under a reducing atmosphere and 41.66, -6.36, -14.7 under and oxidation atmosphere, respectively.

• 대한안전경영과학회지
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• 제9권6호
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• pp.197-204
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• 2007

Ceramic pigments were developed by using 4 kinds of Brass scraps. Each Brass scraps were mixed with same weight-ratio of Husk ash, and fine-ground by Rotate ring mill(RRG-120, Armstech industrial. co. Ltd, Korea) after firing at $900^{\circ}C$, $1000^{\circ}C$ and $1100^{\circ}C$. As a result, analysis of particle size of synthetic pigments by particle size analyser, they are $3{\mu}m$ as average. The resulting pigments were characterized by using XRD, FT-IR, SEM Structure of the crystals are Zn2SiO4,, and ZnO, Cu2O, CuO, and cristobalite are existed and particles' shape are plate or needle. As a result of analysis of chemical composition by XRF, synthetic pigments have high SiO2 and CuO content and have SnO2, ZnO and NiO, too. 1wt%, 3wt% and 5wt% pigments were added in each lime glaze, lime-barium glaze and lime-magnesia glaze, and fired at oxidation and reducing atmosphere to figure hue in glazes out. As a result of analysis of color, chroma and brightness by UV, colors of glazes fired at oxidation atmosphere turned into green from sky blue, and colors of glazes fired at reducing atmosphere turned into pink and red.

• Korean Chemical Engineering Research
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• 제48권5호
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• pp.643-648
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• 2010

본 연구에서는 이온성 액체인 염화콜린에 5가지의 금속염화물을 첨가하여 루이스산 이온성 액체 촉매를 제조하고, 이 촉매를 사용하여 대두유로부터 바이오디젤을 합성하였다. 먼저 단독의 금속염화물인 염화주석과 염화아연, 염화알루미늄, 염화철(III), 염화구리(I) 촉매에 대하여 363~423 K 온도 범위에서 에스터 교환 반응의 반응성을 조사하였다. 5가지의 금속염화물 중 염화주석이 우수한 촉매 활성을 나타내었고, 이러한 경향과 같이 5가지의 루이스산 이온성 액체 촉매 중 $[Me_3NC_2H_4OH]Cl-2SnCl_2$의 촉매가 403 K에서 14시간 동안 유지:메탄올:촉매의 몰 비율 1:12:0.9인 조건으로 최대 91.1%의 높은 반응수율을 나타내었다. 단독의 염화주석 촉매와는 달리, $[Me_3NC_2H_4OH]Cl-2SnCl_2$의 촉매는 반응 후 액체-액체 이상계를 형성하여 반응물과 생성물로부터 쉽게 분리할 수 있으며, 5회 이상 재사용 후에도 활성이 거의 감소하지 않았다. 이러한 결과는 촉매의 수분에 대해 안정성과 강한 루이스 산성도의 특성에 기인한 것으로 생각된다. 또한 촉매에 대한 반응시간과 촉매 및 메탄올 몰 비율 등의 반응변수들에 대한 영향이 조사되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.324-326
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• 2016

In this study, we have investigated indium tin zinc oxide (ITZO) as an active channel for non-volatile memory (NVM) devices. The electrical and memory characteristics of NVM devices using multi-stack gate insulator SiO2/SiOx/SiOxNy (OOxOy) with Si-rich SiOx for charge storage layer were also reported. The transmittance of ITZO films reached over 85%. Besides, ITZO-based NVM devices showed good electrical properties such as high field effect mobility of 25.8 cm2/V.s, low threshold voltage of 0.75 V, low subthreshold slope of 0.23 V/dec and high on-off current ratio of $1.25{\times}107$. The transmission Fourier Transform Infrared spectroscopy of SiOx charge storage layer with the richest silicon content showed an assignment at peaks around 2000-2300 cm-1. It indicates that many silicon phases and defect sources exist in the matrix of the SiOx films. In addition, the characteristics of NVM device showed a retention exceeding 97% of threshold voltage shift after 104 s and greater than 94% after 10 years with low operating voltage of +11 V at only 1 ms programming duration time. Therefore, the NVM fabricated by high transparent ITZO active layer and OOxOy memory stack has been applied for the flexible memory system.