• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.2
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• pp.91-97
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• 2009

The performance of GaInP/GaAs tandem solar cells with AlInP growth temperatures of 680$^{\circ}C$ and 700 $^{\circ}C$ on n-type GaAs (100) substrate with 2$^{\circ}$ and 6$^{\circ}$ tilt angles has been investigated. The series resistance and open circuit voltage of the fabricated tandem solar cells are affected by the substrate tilt angles and the growth temperatures of the window layer when zinc is doped in the tunnel diode. With carbon doping as a p-type doping source in the tunnel diode and the effort of current matching between top and bottom cells, GaInP/GaAs tandem solar cell has been exhibited 25.58% efficiency.

• Korean Journal of Materials Research
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• v.17 no.11
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• pp.612-617
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• 2007

Both photoluminescence and thermal characteristics for $SrAl_2O_4:Eu^{+2},\;Dy^{+3}$ phosphors synthesized with various aluminum compounds (${\alpha}-Al_2O_3$, ${\gamma}-Al_2O_3$, amorphous-$Al_2O_3$ and $Al(OH)_3)$ were investigated in this study. The formation temperature of the host $SrAl_2O_4$ crystal is changed by these various aluminum compounds, as a result of the different thermal decomposition temperature of $SrCO_3$ phase. Among these compounds, the amorphous-$Al_2O_3$ phase shows the lowest formation temperature of the host $SrAl_2O_4$ crystal. The PL emission and excitation spectra of $SrAl_2O_4:Eu^{+2},\;Dy^{+3}$ phosphor are not affected by these aluminum compounds. After the removal of the Xenon lamp excitation (360 nm), however, the excellent longphosphorescent property of the phosphor is obtained by the amorphous-$Al_2O_3$ phase, although the decay time for all phosphors decrease exponentially.

• Journal of the Semiconductor & Display Technology
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• v.11 no.1
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• pp.21-27
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• 2012

The optical diffuser for direct-lit LED backlight unit was prepared by using extrusion compounding followed by thermoforming process. Poly(methyl methacrylate) (PMMA) with superior optical characteristics and polycarbonate (PC) with good thermal property were used as base resins, and crosslinked polystyrene (PS) and PMMA beads as diffusing agents were incorporated into resin matrix to derive light scattering and diffusing action. In the compounded plate, the diffusing beads were observed to be dispersed uniformly and distinctly in the continuous phase. The inclusion of polymeric beads up to 3 wt% substantially enhanced the optical characteristics such as luminance, luminance uniformity, haze for the diffuser. Two different diffusers of PC and PMMA-based compound with various compositions were compared in terms of measured optical, thermal, and mechanical properties, which would be expected to be utilized for the industrial application of LED backlight unit.

• Journal of IKEEE
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• v.14 no.4
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• pp.277-282
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• 2010

In this paper, we proposed ZnO trench Static Induction Transistor(SIT). Because The compound semiconductor had superior thermal characteristics, ZnO and SiC power devices is next generation power semiconductor devices. We carried out modeling of ZnO SIT with 2-D device and process simulator. As a result of modeling, we obtained 340V breakdown voltage. The channel thickness was 3um and the channel doping concentration is 1e17cm-3. And we carried out thermal characteristics, too.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.11-16
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• 2019

The four different polymer compounds were manufactured with the two kinds of plasticizers [(di-2-ethylhexyl sebacate(DOS), and di-2-butyl sebacate(DBS)] and two different additive amounts(18, 26 phr) of the same plasticizer for making cable sheath for ship. Ethylene-vinylacetate, ethylene-propylene-diene-copolymer as matrix polymers and ethylene-vinylacetate grafted maleic anhydride as coupling agent were selected for compounding with fire retardant, closslinking agent, filler, and other additives besides plasticizer. The compound including DOS showed the higher ${\Delta}T$ than that including DBS at the same additive amount in the rheology test. And with increasing plasticizer, the compounds resulted in lower tensile strength and higher elongation by lubricating effect of plasticizer. DOS yielded better aging resistance and cold resistance than DBS due to the good heat resistance and low solidifying point of DOS compared to DBS.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.62-67
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• 2021

In this study, we have successfully developed an unique NVIS Green A compatible LED by combining two technologies. One is white LED made with a black EMC (epoxy molding compound) lead frame. The other is NVIS Green A filter that shields the near infrared region made in the film method. The form factor of the developed NVIS Green A compatible LED was 2.0 × 2.0 × 0.95 mm. And it is possible to satisfy NVIS radiance and color limit specified in MIL-STD-3009 by controlling the concentration of Green A dye and the thickness of the NVIS filter as well as adjusting of color temperature of the white LED. From these results, we are expected that the developed NVIS Green A suitable LED is a promising solution for the weight reduction and the cost reduction of avionic applications.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.510-515
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• 2001

It was first time that low frequency R.F. derived plasma enhanced MOCVD with frimethylborate precursor was used to fabricate a new ternary compound $BO_{x}$ $N_{y}$ . The formation of BON molecule was resulted from nitrogen nitrifying B-O, and forming the angular molecule structure proved by XPS and FT-IR results. The relationship between hardness and film thickness was studied. An thickness-independent hardness was fond about 10 GPa. The empirical calculation of band-gap and UV test result showed that our deposited $BO_{x}$ $N_{y}$ thin film was semiconductor material with 3.4eV of wide band gap. The electrical conductivity, $4.8$\times$10^{-2}$ /($\Omega$.cm)$^{-1}$ also confirmed that $BO_{x}$ $N_{y}$ has a semiconductor property. The roughness detected from the as-grown films showed that there was no serious bombarding effect due to anion in the plasma occurring in the RF frequency derived plasma.

• Nuclear Engineering and Technology
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• v.54 no.12
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• pp.4652-4659
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• 2022

Among the detector materials available at room temperature, thallium bromide (TlBr), which has a relatively high atomic number and density, is widely used for gamma camera imaging. This study aimed to verify the usefulness of TlBr through quantitative evaluation by modeling detectors of various compound types using Monte Carlo simulations. The Geant4 application for tomographic emission was used for simulation, and detectors based on cadmium zinc telluride and cadmium telluride materials were selected as a comparison group. A pixel-matched parallel-hole collimator with proven excellent performance was modeled, and phantoms used for quality control in nuclear medicine were used. The signal-to-noise ratio (SNR), contrast to noise ratio (CNR), sensitivity, and full width at half maximum (FWHM) were used for quantitative analysis to evaluate the image quality. The SNR, CNR, sensitivity, and FWHM for the TlBr detector material were approximately 1.05, 1.04, 1.41, and 1.02 times, respectively, higher than those of the other detector materials. The SNR, CNR and sensitivity increased with increasing detector thickness, but the spatial resolution in terms of FWHM decreased. Thus, we demonstrated the feasibility and possibility of using the TlBr detector material in comparison with commercial detector materials.

• Journal of Adhesion and Interface
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• v.11 no.4
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• pp.168-173
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• 2010

Flame retardant halogen containing compounds have been replaced as environmentally safe material which does not contain hazardous materials generating toxic gas. Self-extinguishing epoxy resin compositions have been studied in order to produce eco-friendly epoxy molding compound, which is used as insulating materials in semiconductor. We developed self-extinguishing epoxy resin compositions which do not contain halogen compounds with new epoxy resin (E3). The new epoxy molding compound (EMC-1) showed high flame resistance (UL-V0) and high thermal resistance ($451.9^{\circ}C$ at 5 wt% loss) enough to use as eco-friendly material.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.326-329
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• 2007

$CuInS_{2}$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furnace annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_{2}$ thin films with non-stoichiometry composition. $CuInS_{2}$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/ln/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and Hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}$ [$cm^{-3}$], 312.502 [$cm^{2}/V{\cdot}s$] and $2.36{\times}10^{-2}$ [${\Omega}{\cdot}cm$], respectively.