• Journal of the Korean Ceramic Society
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• v.51 no.5
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• pp.375-379
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• 2014

Nanocrystalline TiAlN coatings were prepared by reactively sputtering TiAl metal target with $N_2$ gas. This was done using a magnetron sputtering system operated in DC and ICP (inductively coupled plasma) conditions at various power levels. The effect of ICP power (from 0 to 300 W) on the coating microstructure, corrosion and mechanical properties were systematically investigated using FE-SEM, AFM and nanoindentation. The results show that ICP power has a significant influence on coating microstructure and mechanical properties of TiAlN coatings. With increasing ICP power, the coating microstructure evolved from the columnar structure typical of DC sputtering processes to a highly dense one. Average grain size of TiAlN coatings decreased from 15.6 to 5.9 nm with increasing ICP power. The maximum nano-hardness (67.9 GPa) was obtained for the coatings deposited at 300 W of ICP power. The smoothest surface morphology (Ra roughness 5.1 nm) was obtained for the TiAlN coating sputtered at 300 W ICP power.

• Bulletin of the Korean Chemical Society
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• v.30 no.9
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• pp.1946-1950
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• 2009

Tripod-shaped liquid crystals with $sp^3$ nigrogen at the apex were prepared from triethanolamine. Their physical properties were investigated by using optical microscopy, differential scanning calorimetry, and X-ray diffraction measurements. The XRD study suggests that the tripod-shaped molecules show the 2D-ordered phase of either the frustrated smectic layer structure or discotic columnar phases.

• Journal of the Korean institute of surface engineering
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• v.38 no.1
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• pp.44-48
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• 2005

We prepared nickel silicide layers from p-Si(l00)/SiO₂(2000 Å)/poly-Si(700 Å)/Ni(400 Å) structures, feasible for gates in MOSFETs, by annealing them from 500℃～900℃ for 30 minutes. We measured the color coordination in visible range, cross sectional micro-structure, and surface topology with annealing temperature by an UV-VIS-IR spectrometer, field effect scanning electron microscope(FE-SEM), and scanning probe micro-scope respectively. We conclude that we may identify the nickel silicide by color difference of 0.90 and predict the silicide process reliability by color coordination measurement. The nickel silicide layers showed similar thickness while the columnar grains size and surface roughness increased as annealing temperature increased.

• Korean Journal of Materials Research
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• v.13 no.7
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• pp.436-441
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• 2003

The characteristics of <112> orientation were studied for the $TiO_2$thin films, which were prepared on the glass by CVD (chemical vapor deposition) at various substrate temperatures. It was confirmed that $TiO_2$ films exhibited <112>-preferred orientation in a specific temperature range. Although $TiO_2$polycrystalline film grown deposited at relatively low temperature showed the growth of random directions, the <112>-preferred orientation was gradually developed with increasing deposition temperature. According to exhibit higher degree of <112>-preferred orientation, $TiO_2$thin film showed porous surface morphology, well-developed columnar structure, and deeper voids resulted from non-aggregation of columns were observed. In addition, transmittance was enhanced. Therefore, the growth of $TiO_2$with <112>-preferred orientation is suitable for glass coating because of predominance of photocatalytic efficiency and transmittance.

• Fisheries and Aquatic Sciences
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• v.8 no.1
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• pp.17-26
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• 2005

The ultrastructure of germ cells during spermatogenesis and the structural changes in the epithelial cells of the seminal vesicle with testicular development in male Neptunea (Barbitonia) arthritica cumingii were investigated monthly based on electron microscopic and histologic observations. N. arthritica cumingii (Gastropod: Buccinidae) undergoes internal fertilization and possesses a modified type of spermatozoon, which is approximately 20$\mu$m long. The axoneme of the tail flagellum consists of nine peripheral pairs of microtubules and one central pair. Many spermatozoa occur in the acini of the testis in the ripe stage and are transported to the seminal vesicles in the accumulating phase. In males, the monthly gonadosomatic index began to increase in September and reached a maximum in February. Subsequently, it decreased rapidly after April. The testis of this species can be classified into four developmental stages: the active (August to September), ripe (October to July), copulation (April to July), and recovery (July to August) stages. Structural changes in the epithelial cells of the seminal vesicles of this species could be classified into three phases: (1) S-I (resting), (2) S-II (accumulating), and (3) S-III (spent) phases. The morphology and structure of the epithelial cells of the seminal vesicle differed in each phase; the cells were cuboidal, squamous, or columnar in the resting, accumulating, or spent phases, respectively.

• Korean Journal of Poultry Science
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• v.26 no.3
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• pp.171-177
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• 1999

This study was conducted for the histological observation of the infundibulum of the oviduct of the laying Korean native pheasants. The results are as follows : 1. The infundibular wall is composed of the epithelium, lamina propria, muscle layer(inner circular and outer longitudinal muscle), and serosa. The funnel lip is divided into the inner, and outer lip of the epithelium and muscle layer. 2. The epithelium of the funnel lip and most region of the cranial part of the funnel are composed of ciliated columnar cells. In the surface and lateral part of the folds, ciliated cells and non-ciliated secretory cells tend to alternate in the epithelium of the caudal funnel and the necks, but are also found in groups of the simple cuboidal epithelium at the bases of the grooves between the ridges and tubular glands found in the subepithelium. 3. The secretory material of the non-ciliated secretory cills contains PAS-positive and alcian blue-positive granules, and these materials show purple colour in the basic fuchsin-methylene blue stain. 4. The cells of the glandular groove and tubular gland of the neck portion of the oviduct mostly show weak PAS-positive, and alcian blue stain negative reaction. The tubular gland cells of the infndibulum contain pink of purple colour granules, and without reaction in the anterior neck portion of the infundibulum in basic fuchsin and methylene blue stain.

• Journal of the Korean Society for Heat Treatment
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• v.13 no.6
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• pp.398-404
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• 2000

The Ti-Al-V-N films have been deposited on various substrates by d.c and r.f reactive magnetron sputtering from a Ti-6Al-4V alloy target in mixed $Ar-N_2$ discharges. The films were investigated by means of XRD, AES, SEM/EDX, microhardness, TG and scratch test. The XRD and SEM results indicated that the films were of single B1 NaCl phase having dense columnar structure with the (111) preferred orientation. The composition of Ti-Al-V-N film was the Ti-7.1Al-4.3V-N(wt%) films. Adhesion and microhardness of Ti-Al-V-N films deposited by r.f magnetron sputtering method were better than those deposited by d.c magnetron sputtering method. The anti-oxidation properties of Ti-Al-V-N films were also superior to that of Ti-N film deposited by the same deposition conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.22-27
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• 1992

Phosphorus doped hydrogenated microcrystalline silicon (${\mu}c$-Si:H) thin films were deposited by PECVD (Plasma Enhanced Chemical Vapour Deposition) method using 10.2% $SiH_4$ gas (diluted in Ar) and 308ppm $PH_3$ gas (diluted in Ar). The structural, optical and electrical properties of the films were investigated as a function of substrate temperature(15 to $400^{\circ}C$) and RF power(10 to 120W). The thin film deposited by varing substrate temperature had columnar structure and microcrystalline phase. The volume fraction of microcrystalline phase in the films deposited at RF power of 80W, increased with increasing substrate temperature up to $200^{\circ}C$, and then decreased with further increasing substrate temperature. Volume fraction of microcrystalline phase increased monotonously with increasing RF power at substrate temperature of $250^{\circ}C$. With increasing volume fraction of microcrystalline, electrical resistivity of films decreased to 0.274 ${\Omega}cm$.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.176-178
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• 2005

Ferroelectric $Bi_{3.25}Nd_{0.75}Ti_{3}O_{12}(BNdT)$ thin films were proposed for capacitor of FeRAM. The BNdT thin films were grown on Pt/Ti $SiO_2/P-Si(100)$ substrates by the RF magnetron sputtering deposition. The dielectric properties of the BNdT were investigated by varying deposition temperatures. Increasing deposition temperature, the (117) peak was increased. An increase of columnar and recrystalline structure of BNdT films with increasing deposition temperature was observed by the Field Emission Scanning Electron Microscopy(FE-SEM). The dielectric constant and dielectric loss of the BNdT thin films with deposition temperature of $600^{\circ}C$ were 319 and 0.05, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.3-6
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• 2009

Aluminum nitride (AIN) thin films were deposited on a polycrystalline 3C-SiC intermediate layer by a pulsed reactive magnetron sputtering system. Characteristics of the AIN/SiC heterostructures were investigated by field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and Fourier transform infrared spectroscopy (FT-IR). The columnar structure of AIN thin films was observed by FE-SEM. The surface roughness of AlN films on the 3C-SiC buffer layer was measured using AFM. The XRD pattern of AlN films on SiC buffer layers was highly oriented at (002). Full width at half maximum (FWHM) of the rocking curve near (002) reflections was $1.3^{\circ}$. The infrared absorbance spectrum indicated that the residual stress of AIN thin films grown on SiC buffer layers was nearly negligible. The 3C-SiC intermediate layers are promising for the realization of nitride based electronic and mechanical devices.