• Nuclear Engineering and Technology
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• v.50 no.5
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• pp.724-730
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• 2018

Chromium and chromium nitride were selected as potential barriers to prevent fuel-clad chemical interaction (FCCI) between the cladding and the fuel material. In this study, ferritic/martensitic HT-9 steel and misch metal were used to simulate the reaction between the cladding and fuel fission product, respectively. Radio frequency magnetron sputtering was used to deposit Cr and CrN films onto the cladding, and the gas flow rates of argon and nitrogen were fixed at certain values for each sample to control the deposition rate and the crystal structure of the films. The samples were heated for 24 h at 933 K through the diffusion couple test, and considerable amount of interdiffusion (max. thickness: $550{\mu}m$) occurred at the interface between HT-9 and misch metal when the argon and nitrogen were used individually. The elemental contents of misch metal were detected at the HT-9 through energy dispersive X-ray spectroscopy due to the interdiffusion. However, the specimens that were sputtered by mixed gases (Ar and $N_2$) exhibited excellent resistance to FCCI. The thickness of these CrN films were only $4{\mu}m$, but these films effectively prevented the FCCI due to their high adhesion strength (frictional force ${\geq}1,200{\mu}m$) and dense columnar microstructures.

• Journal of the Korean institute of surface engineering
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• v.37 no.2
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• pp.71-75
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• 2004

The technology of $C_{60}$ fullerite films preparation by means of gas-phase deposition and structure of fullerite films are described. A three-channel flow plant was used to obtain fullerite films. The films were deposited in the flow of inert gas under reduced pressure onto a cooled silicon or sapphire substrate placed inside the reaction chamber of the plant. The plant allows one to obtain the films of pure fullerenes and to synthesise the films from fullerene compounds and doped fullerenes. The structure of two types of films were investigated by FE-SEM and SEM techniques: pure fullerite films onto silicon and sapphire substrates as well as compound films were studied by FE-SEM technique. All samples have shown columnar structure with high level of porosity. The synthesis of films composed of fullerene and its compounds for use in electronics is demonstrated to be promising. For example, experiments confirm the possibility to use fullerite films in sensor electronics to produce humidity and thermal sensors. It is also possible to use the sensitivity of these films to isotropic pressure. The experiments with $C_{60}$-Cu-J films have shown quite strong dependence of their resistance on pressure of different sort of medium-gas that could be used in gas-sensitive sensors. The structure and preparation technology of resistive sensor based on fullerite films are described.bed.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.1038-1041
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• 2003

In the paper, we investigated silicon surface microstructures formed by reactive ion etching in hollow cathode system. Wet anisotropic chemical etching technique use to form random pyramidal structure on <100> silicon wafers usually is not effective in texturing of low-cost multicrystalline silicon wafers because of random orientation nature, but High density hollow cathode plasma system illustrates high deposition rate, better film crystal structure, improved etching characteristics. The etched silicon surface is covered by columnar microstructures with diameters form 50 to 100nm and depth of about 500nm. We used $SF_{6}$ and $O_{2}$ gases in HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}$ $cm^{-3}$ at a discharge current of 20 mA. Silicon etch rate of 1.3 ${\mu}s/min$. was achieved with $SF_{6}/O_{2}$ plasma conditions of total gas pressure=50 mTorr, gas flow rate=40 sccm, and rf power=200 W. Our experimental results can be used in various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this paper we directed our study to the silicon etching properties such as high etching rate, large area uniformity, low power with the high density plasma.

• Journal of Korea Foundry Society
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• v.12 no.3
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• pp.220-229
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• 1992

The degree of purification and the macrostructure of high purity aluminium were studied through the alternate stirring method in order to improve the nonuniformity of solute concentration in the unidirectional stirring method. The $2^3$ factorial design was done to examine the effects of experimental factors more qualitatively. In the relatively low stirring speed of 1500 rpm with alternate stirring mode, the uniform solute profile and refined grain structure were obtained due to strong washing effect and turbulent fluid flow. It was induced by the transition of the momentum boundary layer by alternation of the stirrer. It was concluded from this study that the alternate stirring mode was more effective to obtain the uniformity of solute even in the stirring speed of 1500 rpm. But the degree of purification decreased below the critical alternating period. When 2N(99.8wt.%) aluminium was used as the starting material the morphology of solid-liquid showed the cellular shape and the columnar grains were inclined to the direction of rotation. This inclined grain growth resulted from the difference of relative velocities of solid and liquid. The inclined angle was increased as the stirring speed increased and solidification proceeded. In the case of 4N aluminium, there was no inclined grain growth and it was confirmed from the macrostructure and SEM work that the morphology of solid-liquid interface was planar. From the factorial design, it was found that the alternate stirring mode showed poorer purification effect than that of unidirectional stirring mode at low speed(500 rpm). In addition, the factor that had the most significant effect on the degree of purification was the stirring speed.

• Transactions of the Korean Society of Mechanical Engineers
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• v.17 no.1
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• pp.162-171
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• 1993

This paper deals with the anisotropy of the mushy region during solidification process of a binary mixture. A theoretical model which specifies a permeability tensor in terms of pricipal values is proposed. Also, the governing equations are modified into convenient forms for the numerical analysis with the existing algorithm. Some test computations are performed for soeidification of aqueous ammonium chloride solution contained in a square cavity. Results show that not only the present model is capable of resolving fundamental characteristics of the tranport phenomena, but also the anisotropy significantly affects the interdendritic flow structure, i.e., double-diffusive convection and macrosegregation patterns.

• Journal of Korea Foundry Society
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• v.23 no.5
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• pp.276-285
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• 2003

In the undercooled melt of $Pd_{40}Cu_{30}Ni_{10}P_{20}$ alloy, the solidification behavior including nucleation and growth of crystals at the micrometer level has been observed in-situ by use of a confocal scanning laser microscope combined with an infrared image furnace. The $Pd_{40}Cu_{30}Ni_{10}P_{20}$ alloy specimens were cooled from the liquid state to glass transition temperature. 575 K, at various cooling late under a helium gas flow. According to the cooling rate, the morphologies of the solidification front are changed among various types, irregular jog like front, columnar dendritic front, cellular grain, star like shape jog and fine grain, etc. The velocities of the solid-liquid interface are measured to be $10^{-5}{\sim}10^{-8}$ m/s which are at least two orders higher than the theoretical crystal growth rates. Combining the morphologies observed in terms of cooling rates and their solidification behaviors, we conclude that phase separation takes place in the undercooled molten $Pd_{40}Cu_{30}Ni_{10}P_{20}$ alloy. The continuous cooling transformation (CCT) diagram was constructed from solidification onset time at various linear cooling conditions with different rate. The CCT diagram suggests that the critical cooling rate for glassy solidification is about 1.5 K/s, which is in agreement with the previous calorimetric findings.

• The Korean Journal of Quaternary Research
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• v.2 no.1
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• pp.25-50
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• 1988

The survival of rich evidence of palaeolithic occupation found in the Imjin-Hant'an River basin was possible due to many fortuitous geological conditions provided there. Formation of the basalt plain in a narrow valley system which developed during the late Mesozoic insured the appearance of a basin of sedimentation in which archaeological sites would be preserved with relatively minor post-depositional disturbance. Geomagnetic and K-Ar dating indicates that lava flows occurred during the Brunes Normal Epoch. During and after the process of basin sedimentation, erosion of the plain was confined to the major channel of the present river system which developed along the structural joints formed by the lava flow. Due to characteristic columnar structure and platy cleavage of the basalt bedrock, erosion of the basalt bedrock occurred mainly in vertical direction, developing deep but narrow entrenched valleys cut into the bedrock. Consequently, the large portion of the site area remained intact. Cultural deposits formed on top of the basalt plain were left unmodified by later fluvial disturbances due to changes in the Hant'an River base-level, since they were formed about 20 to 40m above the modern floodplain. Sedimentological evidence of cultural deposits and palynological analysis of lacustrine bed formed in the tributary basin of the Hant'an River indicate that hominid occupation occurred in this basin under rapidly deteriorating climatic conditions. From three thermoluminescence dates, the timing of hominid occupation as represented by 'Acheulian-like' bifaces apparently occur sometime during 45,000 BP. Thus, deposition of cultural layers in this basin approximately coincides with the beginning of the second stadial of the final glacial, during which the Korean Peninsula must have had provided a sanctuary for prolonged human occupation.