• 제목/요약/키워드: coincidence site lattice (CSL)

검색결과 2건 처리시간 0.016초

11 wt% 크롬이 함유된 Ti 첨가 페라이트스테인리스강의 입계부식에 미치는 규소의 영향 (Effect of Silicon on Intergranular Corrosion Resistance of Ti-stabilized 11 wt% Cr Ferritic Stainless Steels)

  • 현영민;김희산
    • Corrosion Science and Technology
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    • 제12권6호
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    • pp.265-273
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    • 2013
  • Ti-stabilized 11 wt% Cr ferritic stainless steels (FSSs) for automotive exhaust systems have been experienced intergranular corrosion (IC) in some heat-affected zone (HAZ). The effects of sensitizing heat-treatment and silicon on IC were studied. Time-Temperature-Sensitization (TTS) curves showed that sensitization to IC was observed at the steels heat-treated at the temperature lower than $650^{\circ}C$ and that silicon improved IC resistance. The sensitization was explained by chromium depletion theory, where chromium is depleted by precipitation of chromium carbide during sensitizing heat-treatment. It was confirmed with the results from the analysis of precipitates as well as the thermodynamical prediction of stable phases. In addition, the role of silicon on IC was explained with the stabilization of grain boundary. In other words, silicon promoted the formation of the grain boundaries with low energy where precipitation was suppressed and consequently, the formation of Cr-depleted zone was retarded. The effect of silicon on the formation of grain boundaries with low energy was proved by the analysis of coincidence site lattice (CSL) grain boundary, which is a typical grain boundary with low energy.

Radiation induced grain boundary segregation in ferritic/martensitic steels

  • Xia, L.D.;Ji, Y.Z.;Liu, W.B.;Chen, H.;Yang, Z.G.;Zhang, C.;Chen, L.Q.
    • Nuclear Engineering and Technology
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    • 제52권1호
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    • pp.148-154
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    • 2020
  • The radiation induced segregation of Cr at grain boundaries (GBs) in Ferritic/Martensitic steels was modeled assuming vacancy and interstitialcy diffusion mechanisms. In particular, the dependence of segregation on temperature and grain boundary misorientation angle was analyzed. It is found that Cr enriches at grain boundaries at low temperatures primarily through the interstitialcy mechanism while depletes at high temperatures predominantly through the vacancy mechanism. There is a crossover from Cr enrichment to depletion at an intermediate temperature where the Cr:Fe vacancy and interstitialcy diffusion coefficient ratios intersect. The bell-shape Cr enrichment response is attributed to the decreasing void sinks inside the grains as temperature rises. It is also shown that low angle grain boundaries (LAGBs) and special Σ coincidence-site lattice (CSL) grain boundaries exhibit suppressed radiation induced segregation (RIS) response while high angle grain boundaries (HAGBs) have high RIS segregation. This different behavior is attributed to the variations in dislocation density at different grain boundaries.