• Journal of Magnetics
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• 제11권3호
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• pp.119-122
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• 2006

We electroplated copper-cobalt thin films on a silicon substrate, which had 150 nm thick copper seed layer. The adhesion between the two metallic layers could be increased by utilizing a proper organic additive, pulse plating technique, and high temperature annealing. The thin films exhibited columnar growth of the deposits and enhanced adhesion. This is attributed to the grain growth mechanism introduced by the additive and annealing.

• Macromolecular Research
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• 제10권5호
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• pp.273-277
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• 2002

Ultra-thin polymer films containing cobalt(II) meso-tetraphenylporphyrin(CoTPP) have been prepared by vacuum codeposition of the metal complex and trans-2-butene as an organic monomer using an inductively coupled RF glow discharge operating at 7-9 Watts. The polymer films were characterized by sorption measurements. Sorption data obtained for polymer films containing CoTPP indicate that the CoTPP molecules are capable of reversibly binding oxygen molecules. It was found that the adjacent CoTPP molecules in the aggregated metal complex phase could irreversibly share the oxygen molecules. A dispersion of the metal complex molecules in the polymer matrix was made to maintain the reversible reactivity of the metal complex molecules with oxygen in the polymer films via vacuum evaporation process. The Henry mode solubility constant, the Langmuir mode capacity constant, the amount of binding oxygen, and the dissociation equilibrium in the dual mode sorption theory were discussed.

• 한국세라믹학회지
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• 제38권8호
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• pp.683-686
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• 2001

Electrochemically active lithium nickel cobalt oxide thin-film was not fabricated until now. The thin-film was deposited by RF magnetron sputtering at room temperature, and its initial phase was amorphous. By varying deposition condition, the different characteristics of thin-film were achieved. Using electrochemical analyses, the relationship between physical and electrochemical characteristics was identified. Crystallized thin-film by RTA (Rapid Thermal Annealing) was shown a good capacity and cycle property.

• 한국산학기술학회논문지
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• 제6권3호
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• pp.270-272
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• 2005

코발트 실리사이드는 낮은 전기 저항성 때문에 고효율 소자를 제조하는데 적합한 물질이다. 이는 전자소재가 소형화되면서 접촉저항과 혼합을 줄이기 위해 더욱 필요하게 되었다. 본 연구에서는 티타늄의 표면산화에 미치는 영향과, RTO 조건에서 온도에 따른 코발트 실리사이드 박막의 산화정도를 측정했다. 기질로서 p-형 실리콘웨이퍼를 사용하였고, 고속 열 가공을 통하여 박막을 가공하였다. 티타늄 층을 입혔을 때 산화충의 두께는 $500{\AA}$정도 성장하였다. 고속 열산화의 온도변화에 따라 산화막은 $550^{\circ}C\~700^{\circ}C$까지는 성장을 보였으나 $700^{\circ}C$이상에는 산화막 성장이 포화상태를 보였다.

• 대한금속재료학회지
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• 제47권5호
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• pp.316-321
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• 2009

Co nanoparticles on silica substrates were fabricated by inducing a thin-film dewetting through two different processes-furnace annealing and pulsed-laser annealing. The effects of annealing temperature, film thickness and laser energy density on dewetting morphology and mechanism were investigated. Co thinfilms with thicknesses between 3 to 15 nm were deposited using ion-beam sputtering, and then, in order to induce dewetting, thermally annealed in furnace at temperatures between 600 and $900^{\circ}C$. Some as-deposited films were irradiated using a Nd-YAG pulsed-laser of 266 nm wavelength to induce dewetting in liquid-state. Films annealed in furnace agglomerated to form nanoparticles above $700^{\circ}C$, and those average particle size and spacing were increased with an increase of film thickness. On the laser annealing process, above the energy density of $100mJ/cm^2$, metal films were completely dewetted and the agglomerated particles exhibited greater size uniformity than those on the furnace annealing process. A detailed dewetting mechanism underlaying both processes were discussed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.377-377
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• 2012

Microprocessor technology now relies on copper for most of its electrical interconnections. Because of the high diffusivity of copper, Atomic layer deposition (ALD) $TaN_x$ is used as a diffusion barrier to prevent copper diffusion into the Si or $SiO_2$. Another problem with copper is that it has weak adhesion to most materials. Strong adhesion to copper is an essential characteristic for the new barrier layer because copper films prepared by electroplating peel off easily in the damascene process. Thus adhesion-enhancing layer of cobalt is placed between the $TaN_x$ and the copper. Because, cobalt has strong adhesion to the copper layer and possible seedless electro-plating of copper. Until now, metal film has generally been deposited by physical vapor deposition. However, one draw-back of this method is poor step coverage in applications of ultralarge-scale integration metallization technology. Metal organic chemical vapor deposition (MOCVD) is a good approach to address this problem. In addition, the MOCVD method has several advantages, such as conformal coverage, uniform deposition over large substrate areas and less substrate damage. For this reasons, cobalt films have been studied using MOCVD and various metal-organic precursors. In this study, we used $C_{12}H_{10}O_6(Co)_2$ (dicobalt hexacarbonyl tert-butylacetylene, CCTBA) as a cobalt precursor because of its high vapor pressure and volatility, a liquid state and its excellent thermal stability under normal conditions. Furthermore, the cobalt film was also deposited at various $H_2/NH_3$ gas ratio(1, 1:1,2,6,8) producing pure cobalt thin films with excellent conformality. Compared to MOCVD cobalt using $H_2$ gas as a reactant, the cobalt thin film deposited by MOCVD using $H_2$ with $NH_3$ showed a low roughness, a low resistivity, and a low carbon impurity. It was found that Co/$TaN_x$ film can achieve a low resistivity of $90{\mu}{\Omega}-cm$, a low root-mean-square roughness of 0.97 nm at a growth temperature of $150^{\circ}C$ and a low carbon impurity of 4~6% carbon concentration.

• 한국산업융합학회 논문집
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• 제19권4호
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• pp.176-184
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• 2016

Electrochemical ion exchange method is expected to be one of the most acceptable techniques for the separation of radioactive cations from nuclear wastewater. In this study a thin film of hexacyanoferrate on nickel surface was derivatized chemically in an aqueous potassium-ferricyanide solution. Electrochemical redox behavior of the nickel hexacyanoferrate(NiHCNFe) film electrode was investigated with the use of cyclic voltammetry potentiostated from -100 to 800 mV versus SCE. The electro-reduction characteristics of the NiHCNFe film were examined in the cobalt solutions. The NiHCNFe ion exchanger was more useful at lower concentration, lower temperature, and pH7 of the cobalt solution. The capacity loss of NiHCNFe was 0.018%/cycle that was less than the average loss of 2~3%/cycle of the convective organic exchanger. The 45~55% of the initial cobalt ions was electro-deposited on the NiHCNFe by using continuous recirculating reactor system. As a result, it was found that the electroactive NiHCNFe films showed better performance than the organic resins for the separation of cobalt ion from the aqueous solutions.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 The 1st International Symposium on Advanced Magnetic Materials
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• pp.116.1-116.1
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• 2007

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.28.2-28.2
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• 2009

Cobalt thin film was fabricated by a novel NH3-based plasma-enhanced atomic layer deposition(PE-ALD) using Co(CpAMD) precursor and $NH_3$ plasma. The PE-ALD Co thin films were produced well on both thermally grown oxide (100 nm) $SiO_2$ and Si(001) substrates. Chemical bonding states and compositions of PE-ALD Co films were analyzed by XPS and discussed in terms of resistivity and impurity level. Especially, we successfully developed PE-ALD Code position at very low growth temperature condition as low as $T_s=100^{\circ}C$, which enabled the fabrication of Co patterns through lift-off method after the deposition on PR patterned substrate without any thermal degradation.

• 한국세라믹학회지
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• 제43권11호
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• pp.703-709
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• 2006

We report on the synthesis of highly uniform, single phase zinc and cobalt thin films prepared by the Liquid Phase Deposition (LPD) method. X-Ray diffraction, TGA and EDX measurements support the assumption that the as deposited films are constituted by a mixture of crystallized FeOOH and amorphous M(OH)$_2$ (M=Co, Zn) which is converted upon heat treatment in air at 600?C into the corresponding zinc ferrites. The films with adjustable chemical compositions are identified with a crystal structure as spinel-type and present a spherical or rod-like microstructure, depending on the both the nature and concentration of the divalent transition metal ions. Zinc ferrite thin films present a superparamagnetic behavior above blocking temperatures which decrease with increasing the Zn content and are ferromagnetic at 5 K with coercivities ranging between 797.8 and 948.5 Oe, whereas the cobalt ferrite films are ferromagnetic at room temperature with magnetic characteristics strongly dependent on the chemical composition.