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The emissivity and opto-electrical properties of ZnO/Cu/ZnO thin films for the vehicle applications (ZnO/Cu/ZnO 박막의 차량용 저방사 및 전기광학적 특성 연구)

  • Yeon-Hak Lee;Sun-Kyung Kim;Tae-Yong Eom;Yong-Ha Jeong;Sang-Woo So;Young-Gil Son;Dong-Il Son;Daeil Kim
    • Journal of the Korean institute of surface engineering
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    • v.56 no.6
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    • pp.451-456
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    • 2023
  • Transparent conducting films having a three layered structure of ZnO/Cu/ZnO (ZCZ) were deposited onto the glass substrates by using RF and DC magnetron sputtering at room temperature. The emissivity and opto-electrical properties of the films were investigated with a varying thickness(5, 10, 15 nm) of the Cu interlayer. With increasing the Cu thickness to 15 nm, the films showed a enhanced electrical properties. Although ZnO 30/Cu 15/ZnO 30 nm film shows a lower resistivity of 5.2×10-5 Ωcm, it's visible transmittance is deteriorated by increased optical absorbtion of the films. In addition, X-ray diffraction patterns indicated that the insertion of Cu interlayer improve the grain size of ZnO films, which is favor for the electrical and optical properties of transparent conducting films. From the observed low emissivity of the films, it is concluded that the ZCZ thin films with optimal thickness of Cu interlayer can be applied effectively for the car's window coating materials.

A Study on the Optimization of the SiNx:H Film for Crystalline Silicon Sloar Cells (결정질 실리콘 태양전지용 SiNx:H 박막 특성의 최적화 연구)

  • Lee, Kyung-Dong;Kim, Young-Do;Dahiwale, Shailendra S.;Boo, Hyun-Pil;Park, Sung-Eun;Tark, Sung-Ju;Kim, Dong-Hwan
    • Journal of the Korean Vacuum Society
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    • v.21 no.1
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    • pp.29-35
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    • 2012
  • The Hydrogenated silicon nitride (SiNx:H) using plasma enhanced chemical vapor deposition is widely used in photovoltaic industry as an antireflection coating and passivation layer. In the high temperature firing process, the $SiN_x:H$ film should not change the properties for its use as high quality surface layer in crystalline silicon solar cells. Initially PECVD-$SiN_x:H$ film trends were investigated by varying the deposition parameters (temperature, electrode gap, RF power, gas flow rate etc.) to optimize the process parameter conditions. Then by varying gas ratios ($NH_3/SiH_4$), the hydrogenated silicon nitride films were analyzed for its optical, electrical, chemical and surface passivation properties. The $SiN_x:H$ films of refractive indices 1.90~2.20 were obtained. The film deposited with the gas ratio of 3.6 (Refractive index=1.98) showed the best properties in after firing process condition. The single crystalline silicon solar cells fabricated according to optimized gas ratio (R=3.6) condition on large area substrate of size $156{\times}156mm$ (Pseudo square) was found to have the conversion efficiency as high as 17.2%. Optimized hydrogenated silicon nitride surface layer and high efficiency crystalline silicon solar cells fabrication sequence has also been explained in this study.