• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.85-87
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• 2009

Despite the success of $Cu(In,Ga)Se_2$ (CIGS) based PV technology now emerging in several industrial initiatives, concerns about the cost of In and Ga are often expressed. It is believed that the cost of those elements will eventually limit the cost reduction of this technology. one candidate to replace CIGS is $Cu_2ZnSnSe_4$ (CZTSe), fabricated by co-evaporation technique. Effects of substrate temperature of $Cu_2ZnSnSe_4$ absorber layer on the performance of thin films solar cells were investigated. As substrate temperature increased, the grain size of $Cu_2ZnSnSe_4$ films increased presumably. At a optimal condition of substrate temperature is $320^{\circ}C$, the solar cell shows a conversion efficiency of 1.79% with $V_{OC}$ of 0.213V, JSC of $16.91mA/cm^2$ and FF of 49.7%.

• 반도체디스플레이기술학회지
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• 제8권1호
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• pp.1-5
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• 2009

Typically, single-wafer wet etching is done by dispensing chemical onto the front and back side of spin wafer. The wafer is fixed by a number of chuck pins, which obstruct the chemical flow and would result in the incomplete removal of the remaining film, which can become a source of contamination in the next process. In this paper, we introduce a novel design of wafer chuck, in which chuck pins are groupped into two and each group of pins fixes the substrate alternatively. Two groups of chuck pins fix the high-speed spin substrate with non contact method using a magnetic material. The actual process has been executed to observe the effectiveness of this new wafer chuck. It was found that the new wafer chuck performed better than the conventional wafer chuck for removing the remaining film from the bevel and edge side of substrate.

• 한국표면공학회지
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• 제32권3호
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• pp.428-432
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• 1999

As metallic surface has its unique lustrous appearance and optical reflectance in visible range of light, the metallization of plastic surface has been an essential drive toward weight reduction for fuel economy and decorations in transportation industry and has been put into practiced from wet chemical-electrochemial to dry vacuum process in view of an environmental effect. Electron-beam metallization was used in this work with an aim at improving the scratchproof surface hardness of plastic substrate with metallic finish character. Thin film of Al ($1000\AA$) and $SiO_2$($7000\AA$) were metallized on substrate of PC and PMMA and the films were evaluated by pencil test for surface hardness and by cross-cut tape test for adhesion. The ion beam treatment improved around twice as hard as non-treat surface. The ion beam is effect on its hardness and adhesion to surface hardened PC substrate.

• Environmental Engineering Research
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• 제24권3호
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• pp.449-455
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• 2019

To investigate the effect of seaweed (SW) addition on anaerobic co-digestion of food waste (FW) and sewage sludge (SS), batch experiments were conducted at various substrate concentrations (2.5, 5.0, 7.5, and 10.0 g volatile solids (VS)/L) and mixing ratios ((FW or SS):SW = 100:0, 75:25, 50:50, 25:75, and 0:100 on a VS basis). The effect of SW addition on FW digestion was negligible at low substrate concentration, while it was substantial at high substrate concentrations by balancing the rate of acidogenesis and methanogenesis. At 10 g VS/L, $CH_4$ production yield was increased from 103 to $350mL\;CH_4/g$ VS by SW addition (FW:SW = 75:25). On the other hand, SW addition to SS enhanced the digestion performance at all substrate concentrations, by providing easily biodegradable organics, which promoted the hydrolysis of SS. $k_{hyd}$ (hydrolysis constant) value was increased from 0.19 to $0.28d^{-1}$ by SW addition. The calculation showed that the synergistic $CH_4$ production increment by co-digesting with SW accounted for up to 24% and 20% of total amount of $CH_4$ production in digesting FW and SS, respectively.

• 반도체디스플레이기술학회지
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• 제19권4호
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• pp.46-50
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• 2020

In this research, the attractive force of Coulomb type electrostatic chuck(ESC), which consisted of alumina dielectric, on glass substrate was studied by using the finite element analysis. The attractive force is caused by the high electrical resistance which occurs in contact region between glass substrate and dielectric layer. This research tries the simple geometrical modeling of ESC and glass substrate with air gap. The influences of the applied voltage, and air gap are investigated. When alumina dielectric with 1014 Ω·cm, 1.5 kV voltage, and 0.01 mm air gap were applied, electrostatic force in this work reached to 4 gf/㎠. This results show that the modeling of air gap is essential to derive the attractive force of the ESC.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.998-1001
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• 2009

A new flexible TFT backplane structure with improved mechanical reliability is proposed. Amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors based on this structure have been fabricated on a polyimide substrate, and the resultant mechanical durability has been evaluated in a cyclic bending test. The panel can withstand 10,000 bending cycles at a bending radius of 5 mm without any noticeable TFT degradation. After 10K bending cycles, the change of threshold voltage, mobility, sub-threshold slope, and gate leakage current were only -0.22V, -0.13$cm^2$/V-s, -0.05V/decade, and $-3.05{\times}10^{-13}A$, respectively.

• 농약과학회지
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• 제14권3호
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• pp.183-190
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• 2010

수용체 접근 방법으로 새로운 제초성 물질을 탐색하기 위하여 acetyl-CoA carboxylase(PDB code: 3K8X)에 대한 2-(4-(6-chloro-2-benzoxazolyl)oxy)phenoxy-N-phenylpropionamide 유도체(1-38)의 분자도킹으로부터 기질분자와 수용체 사이의 상호작용을 정량적으로 검토하였다. 대부분의 기질분자들은 ACCase의 반응점내 아미노산 잔기들(Ala1627 및 Ile1735) 사이에 2개의 수소결합이 생성되었다. 그러나 $R_1$=Acetyl 지환체(6 및 P9)와 같은 기질분자들은 나머지 잔기(Gly1998)를 포함하는 3개의 아미노산 잔기내 수소결합 주게들과 기질분자의 수소결합 받게들 사이에 3개의 수소결합이 생성되었다. 그러므로 수소결합 특성들에 기인한 기질분자들의 ACCase에 대한 저해활성 요소들은 제초성 물질을 최적화하는데 적용될 수 있을것이다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 1995년도 추계연구발표회 논문개요집
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• pp.94-95
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• 1995

• 한국자기학회지
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• 제21권6호
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• pp.214-218
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• 2011

본 연구에서는 DC 마그네트론 스퍼터링을 이용해 MgO 단결정 기판 위에 성장된 Ag/CoFeB 박막의 스퍼터링 조건에 따른 박막 미세구조의 변화를 연구하였다. Ag 박막의 결정성 및 표면 거칠기는 인가전력(sputtering power) 및 증착온도의 변화에 따라 증착온도가 증가하는 경우 (200) 방향의 결정성이 향상되는 것을 확인하였으며, 인가전력이 증가되는 경우 표면 거칠기가 감소하는 것을 확인하였다. 또한 고분해능 TEM(transmission electron microscopy) 및 XRR(X-ray reflectivity) 측정을 통해 MgO 기판 위 Ag층의 켜쌓기 성장 및 MgO 기판과 Ag층 사이에 산화층에 해당하는 계면층이 존재하는 것을 알 수 있었으며, 증착온도의 증가에 따른 Ag의 섬상구조 형성 및 intermixing 효과에 의한 Ag/CoFeB 계면층의 변화 및 자기적 특성의 변화를 연구하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.14-14
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• 2006

Al2O3 단결정을 기판을 이용하여 HVPE법으로 GaN를 성장한 후 얻어진 GaN wafer는 N-face에 동종인 GaN를 성장하였다. 이때 동종 성장은 Al2O3와의 열팽창계수 차이로 야기된 휨을 제거할 수 있었으며, 양쪽 면은 결합 밀도가 급격히 감소하였다. 또한 표면 분극을 조사하기 위하여 에칭후 SEM 형상과 CBED를 조사 하였으며 특히 N-face에서의 표면 형상과 PL의 변화를 조사하였다. 이때 N-face의 변화는 초기의 N-face의 특성과 다른 양상을 보여 주고 있으며, DXRD와 PL 분석 걸과 결정성은 두배나 높은 결과를 보여주고 있다.