• 마이크로전자및패키징학회지
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• 제30권1호
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• pp.63-70
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• 2023

오늘날 심각한 환경 오염과 에너지의 중요성으로 전력 반도체의 중요도가 지속적으로 높아지고 있다. 특히 wide band gap(WBG)소자 중 하나인 SiC-MOSFET은 우수한 고전압 특성을 가지고 있어 그 중요도가 매우 높다. 하지만 SiC-MOSFET의 전기적 특성이 열에 민감하기 때문에 패키지를 통한 열 관리가 필요하다. 본 논문에서는 기존 전력 반도체에서 사용하는 direct bonded copper(DBC) 기판 방식이 아닌 insulated metal substrate(IMS) 방식을 제안한다. IMS는 DBC에 비해 공정이 쉬우며 coefficient of thermal expansion (CTE)가 높아서 비용과 신뢰성 측면에서 우수하다. IMS의 절연층인 dielectric film의 열전도도가 낮은 문제가 있지만 매우 얇은 두께로 공정이 가능하기 때문에 낮은 열 전도도를 충분히 극복할 수 있다. 이를 확인하기 위해서 이번 연구에서는 electric-thermal co-simulation을 수행하였으며 검증을 위해 DBC 기판과 IMS를 제작하여 실험하였다.

• Journal of Electrochemical Science and Technology
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• 제1권1호
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• pp.45-49
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• 2010

$Li_2PtO_3$ thin film electrodes, which might be possible candidate for the cathode materials for implantable batteries, were synthesized using an electrostatic spray deposition (ESD) technique onto a platinum foil substrate. Single phase $Li_2PtO_3$with a structure similar to layered $LiCoO_2$ structure were synthesized by spraying a precursor solution of $CH_3CO_2Li2H_2O$ in ethanol onto a Pt substrate at temperatures ranging from 200 to $400^{\circ}C$ followed by annealing at above $600^{\circ}C$. Lithium carbonate was the only major phase at temperatures up to $500^{\circ}C$. The X-ray diffraction (XRD) peaks of the Pt foil substrate and lithium carbonate disappeared at temperatures >$600^{\circ}C$. The volumetric capacity of the $Li_2PtO_3$ thin film synthesized using the ESD technique was approximately 817 mAh/$cm^3$, which exceeded that of $LiCoO_2$ (711 mAh/$cm^3$).

• Tribology and Lubricants
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• 제30권6호
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• pp.378-383
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• 2014

This study predicts the of the hysteretic friction of a rubber block sliding on an SMA asphalt road. The friction of filled rubber on a rough surface is primarily determined by two elements:the viscoelasticity of the rubber and the multi-scale perspective asperities of the road. The surface asperities of the substrate exert osillating forces on the rubber surface leading to energy dissipation via the internal friction of the rubber when rubber slides on a hard and rough substrate. This study defines the power spectra at different length scales by using a high-resolution surface profilometer, and uses rubber and road surface samples to conduct friction tests. I consider in detail the case when the substrate surface has a self affine fractal structure. The theory developed by Persson is applied to describe these tests through comparison with the hysteretic friction coefficient relevant to the energy dissipation of the viscoelastic rubber attributable to cyclic deformation. The results showed differences in the absolute values of predicted and measured friction, but with high correlation between these values. Hence, the friction prediction model is an appropriate tool for separating the effects of each factor. Therefore, this model will contribute to clearer understanding of the fundamental principles of rubber friction.

• Design & Manufacturing
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• 제15권1호
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• pp.32-40
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• 2021

Mold design for in-mold coating was carried out to achieve simultaneous injection molding and two-color coating for car gas cap cover. The developed mold includes one core and three cavities which are composed of a substrate cavity and two coating cavities. To provide a sealing edge for complete seal during the second coating, the first coated material was used at the boundary between the first coating and the second one, and injection molded substrate was used at the parting line. The materials used were PC/ABS for substrate and 2-component Polyurea for coating. Through experiments, it was found that the suggested sealing edges were effective for complete seal during the second coating. In cavity pressure traces, there were three peaks caused by mold closing, coating-material injection and cleaning-piston advancement inside the mixing head. The cavity pressure increased with decreasing coating thickness.

• 한국표면공학회지
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• 제46권2호
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• pp.68-74
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• 2013

For the coating of diamond films on WC-Co tools, a buffer interlayer is needed because Co catalyzes diamond into graphite. W and Ti were chosen as candidate interlayer materials to prevent the diffusion of Co during diamond deposition. W or Ti interlayer of $1{\mu}m$ thickness was deposited on WC-Co substrate under Ar in a DC magnetron sputter. After seeding treatment of the interlayer-deposited specimens in an ultrasonic bath containing nanometer diamond powders, $2{\mu}m$ thick nanocrystalline diamond (NCD) films were deposited at $600^{\circ}C$ over the metal layers in a 2.45 GHz microwave plasma CVD system. The cross-sectional morphology of films was observed by FESEM. X-ray diffraction and visual Raman spectroscopy were used to confirm the NCD crystal structure. Micro hardness was measured by nano-indenter. The coefficient of friction (COF) was measured by tribology test using ball on disk method. After tribology test, wear tracks were examined by optical microscope and alpha step profiler. Rockwell C indentation test was performed to characterize the adhesion between films and substrate. Ti and W were found good interlayer materials to act as Co diffusion barriers and diamond nucleation layers. The COFs on NCD films with W or Ti interlayer were measured as less than 0.1 whereas that on bare WC-Co was 0.6~1.0. However, W interlayer exhibited better results than Ti in terms of the adhesion to WC-Co substrate and to NCD film. This result is believed to be due to smaller difference in the coefficients of thermal expansion of the related films in the case of W interlayer than Ti one. By varying the thickness of W interlayer as 1, 2, and $4{\mu}m$ with a fixed $2{\mu}m$ thick NCD film, no difference in COF and wear behavior but a significant change in adhesion was observed. It was shown that the thicker the interlayer, the stronger the adhesion. It is suggested that thicker W interlayer is more effective in relieving the residual stress of NCD film during cooling after deposition and results in stronger adhesion.

• 한국정보통신학회논문지
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• 제16권10호
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• pp.2247-2252
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• 2012

본 논문은 동시진공증발법(co-evaporation method)으로 CIGS 박막(thin film)을 제작을 하였다. 제작과정 중 기판온도(substrate temperature)변화와 Ga/(In+Ga) 조성비(composition ratio) 변화에 따른 저항율(resistivity) 및 흡수스펙트럼(absorbance spectra)을 측정하였다. 기판온도가 상승하면 저항율이 감소하였으며, Ga/(In+Ga) 조성비가 0.30에서 0.72까지 증가됨에 따라 밴드갭(band gap)이 1.26eV, 1.30eV, 1.43eV,1.47eV로 증가됨을 알 수 가 있었다. 동일한 조건에서 조성비를 증가하므로써 두께가 증가되었으며 저항율은 감소하였다. 본 실험을 통하여 CIGS 박막을 제작하면 광흡수률(optical absorbance ratio) 및 광전류(optical current)가 증가 될 것으로 예측할 수가 있다.

• 한국정밀공학회지
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• 제28권2호
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• pp.193-201
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• 2011

Clamp type transferring mechanism for package substrate's wet processes was newly developed instead of conventional roller type transferring mechanism. Clamp type transferring mechanism has the advantages of reducing the panel deflection and of minimizing the contact problem between the panel and the transferring mechanism. Individual clamp of the mechanism has two distinct mechanical functions which are perfectly fixing a panel during the transferring and generating adequate tension for the panel. To determine the mechanical parameters of the clamp, panel deflection simulation was conducted and the result was verified by the panel deflection measurement. Also, fixing angle of a clamp could be determined by the free body force analysis of individual clamp. Finally clamp type transferring mechanism was actually manufactured and the transferring performance was verified during the water spraying condition of the package substrate's wet processes.

• 한국재료학회지
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• 제14권12호
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• pp.840-845
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• 2004

Tin dioxide ($SnO_2$) thin films were prepared on Si(100) substrate by PE-ALD using the $DBDTA((CH_{3}CO_2)_{2}Sn[(CH_2)_{3}CH_3]_2)$ Precursor. The properties were studied as a function of source temperature, substrate temperature, and purging time. Scanning probe microscopic images at the source temperature $50^{\circ}C$ and the substrate temperature $300^{\circ}C$ shows lower roughness than those $40/60^{\circ}C$ source and $200/400^{\circ}C$ substrate temperature samples. The purging time for optimum process was 8sec and the deposition rate was about 1 nm per 10 cycles. The conductance of $SnO_2$ thin film showed a constant region in the range of $200^{\circ}C\;to\;500^{\circ}C$. The thin films deposited for 200 cycle show a better sensitivity to CO gas.

• Journal of information and communication convergence engineering
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• 제11권1호
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• pp.45-49
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• 2013

A compact radio frequency (RF) bandpass filter (BPF) in low temperature co-fired ceramic (LTCC) is suggested for WiMAX applications. The center frequency ($f_0$) of the BPF is 5.5 GHz and its pass band or 3-dB bandwidth is 700 MHz to cover all the three major bands, low and middle unlicensed national information infrastructure (U-NII; 5.15-5.35 GHz), World Radiocommunication Conference (5.47-5.725 GHz), and upper U-NII/industrial, scientific, and medical (ISM) (5.725-5.85 GHz), for the WiMAX frequency band. A lumped circuit element design-the 5th order capacitively coupled Chebyshev BPF topology-is adopted. In order to design a compact RF BPF, a very thin ($43.18{\mu}m$) ceramic layer is used in LTCC substrate. An interdigital BPF is also designed in silicon substrate to compare the size and performance of the lumped circuit element BPF. Due to the high relative dielectric constant (${\varepsilon}_r$ = 11.9) of the silicon substrate, the quarter-wavelength resonator of the interdigital BPF can be reduced. In comparison to the 5th order interdigital BPF at $f_0$ = 5.5 GHz, the lumped element design is 24% smaller in volume and has 17 and 7 dB better attenuation characteristics at $f_0{\pm}0.75$ GHz.

• Journal of Magnetics
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• 제12권1호
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• pp.21-26
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• 2007

Si-based electromagnetic noise suppressors on coplanar waveguide transmission lines incorporated with a $SiO_2$ dielectric layer and a nanogranular Co-Fe-Al-O magnetic thin film are reported. Unlike glass-based devices, large signal attenuation is observed even in the bare structure without coating the magnetic thin film. Much larger signal attenuation is achieved in fully integrated devices. The transmission scattering parameter ($S_{21}$) is as small as -90 dB at 20 GHz at the following device dimensions; the thicknesses of the $SiO_2$ and Co-Fe-Al-O thin films are 0.1 $\mu$m and 1 $\mu$m, respectively, the length of the transmission line is 15 mm, and the width of the magnetic thin film is 2000 $\mu$m. In all cases, the reflection scattering parameter ($S_{11}$) is below -10 dB over the whole frequency band. Additional distributed capacitance formed by the Cu transmission line/$SiO_2$/Si substrate is responsible for these characteristics. It is considered that the present noise suppressors based on the Si substrate are a first important step to the realization of MMIC noise suppressors.