• Proceedings of the Materials Research Society of Korea Conference
• /
• 1994.05a
• /
• pp.98-98
• /
• 1994

• Proceedings of the Korean Magnestics Society Conference
• /
• 2005.06a
• /
• pp.178-179
• /
• 2005

• Journal of the Korean Ceramic Society
• /
• v.37 no.5
• /
• pp.425-431
• /
• 2000

Cobalt ferrite thin films on Corming glass substrate were fabricated by a sol-gel method. Cobalt ferrite thin films with the grain size of 20-35 nm and thickness of 50nm were obtained. Rapid thermal annealing (RTA) and Annealing processes were adopted for comparison of characteristics of the films. Coercivity values were changed with thermal condition and magnetization values were increased as a function of soaking time. With prolonged soaking time, however, it was decreased because of the diffusion of cations from the glass substrate. The RTA process in preparation of cobalt ferrite thin film was the effective way to prevent and to form a single spinel phase in reduced soaking time. The film heated at 600$^{\circ}C$ for 30 minutes by RTA had coercivity of 2,600 Oe, saturation magnetization 460 emu/㎤, and Mr$.$$\delta$ of 1.43 memu/$\textrm{cm}^2$.

• Journal of the Korean Graphic Arts Communication Society
• /
• v.21 no.1
• /
• pp.1-10
• /
• 2003

Printing ink is faced various shear stress situation until it transfer to the printed substrate through the press. And in each shear stress condition the ink is needed to keep the appropriate viscosity according to the condition. The change of printing ink viscosity has been explained by well-known through the viscosity profile curve. But actually, the quality of printed paper depends on the ink behavior after transfer the substrates. Like this, to look into the behaviour of the ink on the printed substrate, it is needed the experiment of the ink structure recovering by rheology study. In this study, by controling the $CaCO_3$ content in the ink, after investigating the effect of the ink's structure recovery of the pigment concentration, we intend to predict the printing quality of the ink behvior on the substrate depending on pigment content.

• Proceedings of the KWS Conference
• /
• 2000.10a
• /
• pp.256-259
• /
• 2000

High viscosity mixing powder is a very useful material for laser cladding. This material has a high viscosity so that it can be sticked to substrate. Therefore, Laser cladding can be performed on a curved or slope surface. Laser cladding can be easily performed with the material instead of wire that is difficult to be manufactured in some case. In this experiment, it was used a high viscosity mixing powder which consists of a high temperature flux and a bronze powder. And AC2B alloy material was used as a substrate. Flux prevents the clad layer from being oxidized and increases bonding property between substrate and cladding material. It makes possible to laser cladding at low level energy.

• Proceedings of the KWS Conference
• /
• 1996.10a
• /
• pp.186-190
• /
• 1996

Laser cladding is a technique for modification on surface in materials. This study describes a laser cladding equipment design and the results of laser cladding nickel on rolled steel for general structure. The laser clsdding equipment designed to consider continuous supply, a fixed quantity. The material used MC plastic. Laser cladding condition is found out by processing parameters. The experiment advanced to suppy substrate with powder. The substrate is rolled steel for general structure(KS D 3503) and powder is using the nickel powder for the corrosion resitance, wear resistance and surface hardness of materials. When the substrate travel on X-Y table, laser beam irradiates to prevent from oxidize with shielding gas on it. The obtained specimens measure the victors hardness test. For the research laser cladding results make a comparative study the microstructure.

• Journal of Ceramic Processing Research
• /
• v.17 no.7
• /
• pp.763-767
• /
• 2016

The structural characterization of cubic boron nitride (c-BN) thin films was performed using a B4C target in a radio-frequency magnetron sputtering system. The deposition processing conditions, including the substrate bias voltage, substrate temperature, and base pressure were varied. Fourier-transform infrared spectroscopy and X-ray photoelectron spectroscopy were used to analyze the crystal structures and chemical binding energy of the films. For the BN film deposited at room temperature, c-BN was formed in the substrate bias voltage range of -400 V to -600 V. Less c-BN fraction was observed as the deposition temperature increased, and more c-BN fraction was observed as the base pressure increased.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.6 no.2
• /
• pp.79-86
• /
• 2006

N-polar, Ga-polar, and non-polar GaN was grown by MBE and MOVPE using various substrates and influence of polarity has been investigated. The GaN growth by MOVPE is along cplane (0001), c-plane (0001), and a-plane (11-20) direction on c-plane (0001), a-plane (11-20) and r-plane (1-102) sapphire substrate respectively. The polarity of the film has a strong influence on the morphology and the optical properties of PA-MBE grown As-doped GaN layers. Strong blue emission from As-doped GaN was observed only in the case of N-polarity (000-1) layers, which was attributed to the highest concentration of Ga dangling bonds for this polarity of a GaN surface.

• Journal of the Korean institute of surface engineering
• /
• v.43 no.2
• /
• pp.80-85
• /
• 2010

The surfaces of WC-Co and SCM415 were etched to form a micro size protrusion for oil based ultra low friction applications using an ion bombardment process in a filtered vacuum arc plasma. WC-Co species showed that a self-patterned surface was available by the ion bombarding process due to the difference of sputtering yield of WC and Co. And the increasing rate of roughness was 0.6 nm/min at -600 V substrate bias voltage. The increasing rate of roughness of SCM415 species was 1.5 nm/min at -800 V, but the selfpatterning effect as shown in WC-Co was not appeared. When the SCM415 species pretreated by electrical discharge machining is etched, the increasing rate of roughness increased from 1.5 nm/min to 40 nm/min at -800 V substrate bias voltage and the uniform surface treatment was available.

• Journal of the Korean Vacuum Society
• /
• v.2 no.4
• /
• pp.439-454
• /
• 1993

The phase sequence of codeposited Co-Si alloy and Co/si multilayer thin film was investigated by differential scanning calormetry(DSC) and X-ray diffraction (XRD) analysis, The phase sequence in codeposition and codeposited amorphous Co-Si alloy thin film were CoSilongrightarrow Co2Si and those in Co/Si multilayer thin film were CoSilongrightarrowCo2Silongrightarrow and CoSilongrightarrowCo2Si longrightarrowCoSilongrightarrowCoSi2 with the atomic concentration ration of Co to Si layer being 2:1 and 1:2 respectively. The observed phase sequence was analyzed by the effectvie heat of formatin . The phase determining factor (PDF) considering structural facotr in addition to the effectvie heat of formation was used to explain the difference in the first crystalline phase between codeposition, codeposited amorphous Co-Si alloy thin film and Co/Si multilayer thin film. The crystallinity of Co-silicide deposited by multitarget bias cosputter deposition (MBCD) wasinvestigated as a funcion of deposition temperature and substrate bias voltage by transmission electron microscopy (TEM) and epitaxial CoSi2 layer was grown at $200^{\circ}C$ . Parameters, Ear, $\alpha$(As), were calculate dto quantitatively explain the low temperature epitaxial grpwth of CoSi2 layer. The phase sequence and crystallinity had a stronger dependence on the substrate bias voltage than on the deposition temperature due to the collisional daxcade mixing, in-situ cleannin g, and increase in the number of nucleation sites by ion bombardment of growing surface.