• Title/Summary/Keyword: co-substrate

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Effects of Deposition Conditions on Properties of CuNi thin Films Fabricated by Co-Sputtering of Dual Targets (이중 타겟의 동시 스퍼터링을 이용한 CuNi 박막 제작시 증착변수가 박막의 물성에 미치는 영향)

  • Seo, Soo-Hyung;Lee, Jae-Yup;Park, Chang-Kyun;Park, Jin-Seok
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.50 no.1
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    • pp.11-16
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    • 2001
  • CuNi alloy films are deposited by co-sputtering of dual targets (Cu and Ni, respectively). Effects of the co-sputtering conditions, such as powers applied to the targets, deposition pressures, and substrate temperatures, on the structural and electrical properties of deposited films are systematically investigated. The composition ratio of Ni/Cu is almost linearly decreased by increasing the DC power applied to the Cu target from 25.6 W to 69.7 W with the RF power applied to the Ni target unchanged(140 W). it is noted that the chamber pressure during deposition and the film thickness give rise to a change of the Ni/Cu ratio within the films deposited. The former may be due to a higher sputtering yield of Cu atom and the latter due to the re-sputtering phenomenon of Cu atoms on the surface of deposited film. The film deposited at higher pressures or at lower substrate temperatures have a smaller crystallite size, a higher electrical resistivity, and much more voids. This may be attributed to a lower surface mobility of sputtered atoms over the substrate.

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Biosynthesis and Degradation of Poly(3-hydroxybutyrate-co-3-hydroxyvalerate) in Alcaligenes sp. SH-69 (Alcaligenes sp. SH-69에서의 Poly(3-hydroxybutyrate-co-3-hydroxyvalerate) 생합성 및 분해)

  • Ryu, Kang-Eun;Choi, Gang Guk;Park, Sang Kyu;Kim, YoungBaek;Rhee, Young Ha
    • Korean Journal of Microbiology
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    • v.34 no.4
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    • pp.219-224
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    • 1998
  • The cyclic metabolism of poly(3-hydroxyhutyrate-co-3-hydroxyvalerate) synthesized from glucose by Alcaligenes sp. SH-69 in the presence or absence of new carbon substrate was investigated. In batch culture, the content and weight average molecular weight of the copolymer already stored in the cell decreased rapidly when there was no other carbon source available. After the depletion of carbon source, the amount of high molecular weight copolymer decreased more rapidly than that of low molecular weight copolymer, and as a result, average molecular weight distribution shifted to the lower value. The addition of a mixture of glucose and levulinic acid when the initial carbon substrate, glucose, was nearly depleted supported the continual increase in cell mass and the accumulation of poly(3HB-co-3HV) with high molar fraction of 3HV. However, solvent fractionation of the polymer with acetone revealed the degradation of pre-existing polyhydroxyalkanoale (PHA) in parallel with the synthesis of PHA from new carbon substrate. Even though PHAs obtained from each substrate alone were the copolymer of 3HB and 3HV, it was found that the polymer accumulated in the cells grown by sequential feeding was mainly physical mixture of two poly(3HB-co-3HV) copolymers containing different molar fractions of 3HV.

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Formation of the $CoSi_{2}$ using Co/Zr Bilayer on the Amorphous and the Single Crystalline Si Substrates (단결정과 비정질 Si 기판에서 Co/Zr 이중층을 이용한 $CoSi_{2}$ 형성)

  • Kim, Dong-Wook;Jeon, Hyeong-Tag
    • Korean Journal of Materials Research
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    • v.8 no.7
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    • pp.621-627
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    • 1998
  • The formation of Co-silicide between Co/Zr bilayer on the amorphous and crystalline Si substrates has been investigated. The films of Zr(50$\AA$) and Co(l50$\AA$) were deposited with e-beam evaporation system and were heattreated with the rapid thermal annealing system at the temperatures between 50$0^{\circ}C$ and 80$0^{\circ}C$ with 10$0^{\circ}C$ increments for 30 seconds. The phase identification of Co-silicide was carried out by XRD and the chemical analysis was examined by AES and RBS. The interface morphologies of Co/Zr bilayer films were investigated by cross sectional TEM and HRTEM. $CoSi_2$ was formed epitaxially on the crystalline Si substrate above $700^{\circ}C$ while polycrystalline $CoSi_2$ was grown on the amorphous Si substrate. The formation temperature of Co-silicide on the amorphous Si substrate was about 100 C lower than that on the crystalline Si. The COzSi phase was not identified on the both Si substrates. The formation temperature of first phase of Co-silicide on ColZr bilayer was higher than that on Co mono layer. CoSizlayer formed on the amorphous Si substrate exhibits better uniformity compared to the CoSiz formed on the crystalline substrate. The sheet resistance of CoSiz layer on crystalline Si was lower than that on the amorphous Si at high temperatures.tures.

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Microstructure and Magnetic Properties of Pulsed DC Magnetron Sputtered Zn0.8Co0.2O Film Deposited at Various Substrate Temperatures (증착온도를 달리하여 제조한 Zn0.8Co0.2O 박막의 미세조직 및 자기 특성)

  • Kang, Young-Hun;Kim, Bong-Seok;Tai, Weon-Pil;Kim, Ki-Chul;Suh, Su-Jeung;Park, Tae-Seok;Kim, Young-Sung
    • Journal of the Korean Ceramic Society
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    • v.43 no.2 s.285
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    • pp.79-84
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    • 2006
  • We studied the microstructure and magnetic property of the pulsed DC magnetron sputtered $Zn_{\0.8}Co_{0.2}O$ film as a function of substrate temperatures. The X-ray patterns of the $Zn_{\0.8}Co_{0.2}O$ film showed a strong (002) preferential orientation at $500^{\circ}C$. The films with a crystallite size of 23-35 nm were grown in the form of nano-sized structure and this tendency was remarkable with increasing substrate temperature. The UV-visible result showed that the $Zn_{\0.8}Co_{0.2}O$ film prepared above $300^{\circ}C$ has a high optical transmittance of over $80\%$ in the visible region. The absorption bands were observed due to sp-d interchange action by $Co^{2+}$ complex ion and dd transition in the region from 500 to 700nm. The resistivity of the film was below $10^{-1}\;\Omega-cm\;above\;300^{\circ}C$. The AGM analysis results for the all films showed the magnetic hysteresis curves of ferromagnetic nature. The low electrical resistivity and room temperature ferromagnetism of ZnCoO thin films 'deposited above $300^{\circ}C$ suggested the possibility for the application to Diluted Magnetic Semiconductors (DMSs).

Magnetic Domain Structures with Substrate Temperatures in Co-22%Cr Alloy Thin Films (자가정렬형 나노구조 Co-22%Cr합금 박막의 기판온도에 따른 미세 도메인 구호)

  • 송오성
    • Journal of the Korean Magnetics Society
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    • v.11 no.5
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    • pp.184-188
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    • 2001
  • Using a DC-sputter and changing the substrate temperature to room temperature and 200$\^{C}$, we manufactured each Co-22%Cr alloy thin-films, which has a uniform micro-structure at room temperature, and a fine self-organized nato structure (SONS) at the inside of the grain at the elevated temperature. We also investigated the microstructure and domain structure using a transmission electron microscope (TEM) and a magnetic force microscope (MFM). We managed to corrode selectively Co-enriched phase, then investigate the microstructure using a TEM. We found that it has a uniform composition when it is manufactured at room temperature, but, we found that it has a unique microstructure, which has a plate-like fine Co-enriched phase, with the formation of SONS at the inside of the grain at the elevated temperature. In MFM characterization, we found maze-type domains at the period of 5000 when the substrate temperature maintains at room temperature. We define that the maze-type domain has a disadvantage at the high density recording because it generates noises easily as the exchange coupling energy between the grains is big. On the other hand, there is only a fine domain structure at the period of 500 when the substrate temperature maintains at 200 $\^{C}$. We define that the fine domain structure has an advantage at the high density magnetic recording because it has thermal stability due to small exchange coupling energy.

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A Study of Relationship between Magnetic Properties and Microstructure of CoNiCr/Cr Double Layer Thin Film Magnetic Recording Media (자기기록매체 CoNiCr/Cr 이중박막의 자기적 성질과 미세구조와의 관계연구)

  • 김희삼;남인탁;홍양기
    • Journal of the Korean Magnetics Society
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    • v.3 no.3
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    • pp.215-220
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    • 1993
  • Microstructural dependence of magnetic property of RF/DC sputtered $Co_{69.0}Ni_{18.5}Cr_{12.5}/Cr$ double layer thin film was studied. Grain size was found to be decreased with substrate temperature in the range of $100-200^{\circ}C$ and Cr underlayer thickness(from $500\;{\AA}-2000\;{\AA}$). The peaks (200) and (1120) of X-ray diffraction patterns were evidently grown with the substrate temperature for the Cr underlayer and magnetic layer, respectively. The CoNiCr magnetic layer was found to be well epitaxialy grown on Cr underlayer, and subsequently the coercivity was enhanced.

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Long-Term Stability for Co-Electrolysis of CO2/Steam Assisted by Catalyst-Infiltrated Solid Oxide Cells

  • Jeong, Hyeon-Ye;Yoon, Kyung Joong;Lee, Jong-Ho;Chung, Yong-Chae;Hong, Jongsup
    • Journal of the Korean Ceramic Society
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    • v.55 no.1
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    • pp.50-54
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    • 2018
  • This study investigated the long-term durability of catalyst(Pd or Fe)-infiltrated solid oxide cells for $CO_2$/steam co-electrolysis. Fuel-electrode supported solid oxide cells with dimensions of $5{\times}5cm^2$ were fabricated, and palladium or iron was subsequently introduced via wet infiltration (as a form of PdO or FeO solution). The metallic catalysts were employed in the fuel-electrode to promote $CO_2$ reduction via reverse water gas shift reactions. The metal-precursor particles were well-dispersed on the fuel-electrode substrate, which formed a bimetallic alloy with Ni embedded on the substrate during high-temperature reduction processes. These planar cells were tested using a mixture of $H_2O$ and $CO_2$ to measure the electrochemical and gas-production stabilities during 350 h of co-electrolysis operations. The results confirmed that compared to the Fe-infiltrated cell, the Pd-infiltrated cell had higher stabilities for both electrochemical reactions and gas-production given its resistance to carbon deposition.

Formation of $CoSi_2$ Film and Double Heteroepitaxial Growth of $Si/epi-CoSi_2/Si$(111) by Solid Phase Epitaxy (고상 에피택시에 의한 초박막 $CoSi_2$ 형성과 $Si/epi-CoSi_2/Si$(111)의 이중헤테로 에피택셜 성장)

  • Choi, Chi-Kyu;Kang, Min-Sung;Moon, Jong;Hyun, Dong-Geul;Kim, Kun-Ho;Lee, Jeong-Yong
    • Korean Journal of Materials Research
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    • v.8 no.2
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    • pp.165-172
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    • 1998
  • Epitaxial ultrathin films of $CoSi_2$ and double heteroepitaxial structure of Si/$CoSi_2$/Si(lll) were prepared on Si(111)-$7\times{7}$ substrate by in situ solid-phase epitaxy in a ultrahigh vacuum(LHV). The phase, chemical composition, crystallinity, and the microsructure of the Si/$CoSi_2$/Si(lll) interface were investigated by 2-MeV $^4He^{++}$ ion backscattering spectrometry, X-ray diffraction, and high-resolution transmission electron microscopy. The growth mode of the Co film was the Stransky-Krastanov type with texture when the substrate temperature was room temperature. A-type $CoSi_2$ ultrathin film was grown by deposition of about 50A Co on Si(ll1)-$7\times{7}$ substrate followed by in situ annealing at $700^{\circ}C$ for 10 min. The matching face relationships were $CoSi_2$[110]//Si[110] and $CoSi_2$(002)//Si(002) with no misorientation angle. The A-type $CoSi_2$/Si(lll) interface was abrupt and coherent. The best epi-Si/epi-$CoSi_2$2(A-type)/Si(lll) structure was obtained by deposition of Si film on the CoSii at $500^{\circ}C$ followed by in situ annealing at $700^{\circ}C$ for 10 min in UHV.

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A Study on Substrate Stage Temperature (기판스테이지 온도에 관한 연구)

  • Kim, Sun-Ki;Lee, Woo-Young;Kang, Heung-Suk
    • Journal of the Semiconductor & Display Technology
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    • v.5 no.4 s.17
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    • pp.35-40
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    • 2006
  • This paper shows that the effect of exposing on the top area and a solution which using a water circulation system. Semiconductor substrate stage is made from Aluminum and is repeated the sequence of exposing (150), turning OFF shutter, taking 30 sec. interval at the top area of stage. So the temperature of substrate temperature rises continuously. On this, we made a waterway at the inner part of the substrate stage and operated a water circulation system. We measured the temperature of a substrate stage surface with a thermocouple attached to the substrate stage. To analyze the top area's temperature, we used Analysis Program ANSYS for analysis and 3D CAD program Solid-Works for modeling.

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Thermal Stability and the Effect of Substrate Temperature on the Structural and Magnetic Properties of Pd/Co Multilayer Films (Pd/Co 다층박막의 구조 및 자기적 특성에 미치는 기판온도 및 열적안정성에 관한 연구)

  • 허용철;김상록;이성래;김창수
    • Journal of the Korean Magnetics Society
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    • v.3 no.4
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    • pp.298-304
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    • 1993
  • The effects of the substrate temperature and the Pd underlayer on the structure and the magnetic properties of Pd/Co multilayer films prepared by the thermal evaporation were studied. As the substrate temperature increases up to $150^{\circ}C$, the crystallinity of sublayers, (111) texture and the interface sharpness of Pd/Co multilayers were improved due to the enhanced mobility of adatoms. As results of that, the perpendicular and surface anisotropy energies were increased but the coercivity was decreased because the pinning sites of domain wall decreased due to the grain growth. The grain size of the multilayers increased with Pd underlyer thickness. Thermal degradation was enhanced at above $200^{\circ}C$ due to interdiffusion at the Pd/Co interface. The intensity of the main diffraction peak rapidly decayed in the initial stage of aging and then decreased slowly. The rapid change of the intensity in the initial stage was speculated to be due to the structural relaxation phenomena and the later stage change was due to the interdiffusion. The activation energy for the interdiffusion in Pd4/Co1 multilayers was 14.9 KCal/mole.K.

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