• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.12
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• pp.654-664
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• 2000

Thin films of ZnO are deposited by using an RF magnetron sputtering with varying the substrate temperature(RT~39$0^{\circ}C$) and RF power(50~250W). Cu-doped ZnO(denoted by ZnO:Cu) films have also been prepared by co-spputtering of a ZnO target on which some Cu-chips are attached. Different substrate materials, such as Si, $SiO_{2}/Si$, sapphire, DLC/Si, and poly-diamond/Si, are employed to compare the c-axial growth features of deposited ZnO films. Texture coefficient(TC) values for the (002)-preferential growth are estimated from the XRD spectra of deposited films. Optimal ranges of RF powers and substrate temperatures for obtaining high TC values are determined. Effects of Cu-doping conditions, such as relative Cu-chip sputtering areas, $O_{2}/(Ar+O_{2})$ mixing ratios, and reactor pressures, on TC values, electrical resistivities, and relative Cu-compositions of deposited ZnO:Cu films have been systematically investigated. XPS study shows that the relative densities of metallic $Cu(Cu^{0})$ atoms and $CuO(Cu^{2+})$-phases within deposited films may play an important role of determining their electrical resistivities. It should be noted from the experimental results that highly resistive(> $10^{10}{\Omega}cm$ ZnO films with high TC values(> 80%) can be achieved by Cu-doping. SAW devices with ZnO(or Zn):Cu)/IDT/$SiO_{2}$/Si configuration are also fabricated to estimate the effective electric-mechanical coupling coefficient($k_{eff}^{2}$) and the insertion loss. It is observed that the devices using the Cu-doped ZnO films have a higher $k_{eff}^{2}$ and a lower insertion loss, compared with those using the undoped films.

• Korean Journal of Materials Research
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• v.12 no.12
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• pp.962-966
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• 2002

The $SrBi_2$$Nb_2$$O_{9}$ (SBN) thin films were deposited with $SrNb_2$$O_{6}$ / (SNO) and $Bi_2$$O_3$ targets by co-sputtering method. For the growth of SBN thin films, we adopted the various power ratios of two targets; the power ratios of the SNO target to $Bi_2$$O_3$ target were 100 W : 20 W, 100 W : 25 W, and 100 W : 30 W during sputtering the SBN films. We found that the electrical properties of SBN films were greatly dependent on Bi content in films. The $Bi_2$Pt and $Bi_2$$O_3$ phase as second phases occurred at the films with excess Bi content greater than 2.4, resulting in poor ferroelectric properties. The best growth condition of the SBN films was obtained at the power ratio of 100 W : 25 W for the two targets. At this condition, the crystallinity and electrical properties of the films were improved at even low annealing temperature as $700^{\circ}C$ for 1h in oxygen ambient and the Sr, Bi and Nb component in the SBN films were about 0.9, 2.4, and 1.8 respectively. From the P-E and I-V curves for the specimen, the remnant polarization value ($2P_{r}$) of the SBN films was obtained about 6 $\mu$C/c $m^2$ at 250 kV/cm and the leakage current density of this thin film was $2.45$\times$10^{-7}$ $A/cm^2$ at an applied voltage of 3 V.V.

• Journal of the Korean Electrochemical Society
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• v.3 no.4
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• pp.219-223
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• 2000

All-solid state lithium rechargeable thin film batteries were fabricated with the configuration of$Cu_{0.5}V_2O_5/Lipon/Li$ using sequential thin film techniques. Copper vanadium oxide thin films and Lipon thin films were prepared by DC reactive dual source magnetron sputtering and RF magnetron sputtering, respectively. According to XRD analysis, we found out that copper vanadium oxide thin films were amorphous. The electrochemical behaviour of them was examined in half cell system using EC : DMC(1:1 in IM $LiPF_5$) liquid electrolyte. The ionic conductivity of Lipon thin film was $1.02\times10^{-6}S/cm$ at $25^{\circ}C$ and $Cu_{0.5}V_2O_5/Lipon/Li$ cell showed that the discharge capacity was about $50{\mu}Ah/cm^2{\mu}m$ beyond 500cyc1es.

• Journal of the Korean Magnetics Society
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• v.10 no.4
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• pp.159-163
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• 2000

MR characteristics in magnetic tunnel junction using CoO as the oxide barrier were investigated. Spin-dependent tunnel junctions were fabricated on 4$\^$o/ tilt-cut (111)Si substrates in 3-gun magnetron sputtering system. The top and bottom ferromagnetic electrodes were Ni$\_$80/Fe$\_$20/(300 $\AA$) and Co(300 $\AA$), respectively. The oxide barriers (CoO) were formed by the thermal oxidation at room temperature in an O$_2$ atmosphere and the plasma oxidation. The increase of coercive field due to antiferromagnetic-ferromagnetic coupling has been observed in O$_2$plasma-oxidized CoO based junctions at room temperature. At a sensing current of 1 mA, MR ratios of O$_2$plasma-oxidized CoO based junction and thermal-oxidized CoO based junction at room temperature were 1% and 5%, respectively. Larger MR ratios are observed in magnetic tunnel juctions with thermal oxidized CoO when sensing current more than applied 1.5 mA. At a sensing current of 1.5 mA, we have observed MR value of 28 % and specific resistance (RA=R$\times$A) value of 10.9 ㏀$\times$㎛$^2$. When specific resistance values reached 2.28 ㏀$\times$㎛$^2$, we have observed that MR ratios become as high as 120%.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.169-169
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• 1999

We studied magnetic properties of co thin films deposited on Pd (111) surface, which attracted much attention recently due to the perpendicular magnetic anisotropy, using magnetic circular dichroism(MCD). Special attention was paid on the effect of Pd capping and interface roughness on the direction of magnetic easy axis, and for that purpose MCD signals for all Co thicknesses were measured with two different ways : in-plane and out-of-plane geometry. In case of bare Co films deposited on smooth Pd(111) surface, no MCD signal was observed under 4$\AA$ co thickness. At 4$\AA$ Co thickness, MCD signal at the out-of-plane geometry was observed, and for thicker Co films, only in-plane MCD signal was measured. This type of magnetic easy axis transition has been reported for other cases like Co/Pt system. The effect of 5$\AA$ Pd capping on these bare Co films made an remarkable change on the transition of magnetic easy axis. Out-of-plane MCD signals exists up to 20$\AA$ Co thickness, and disappears at 24$\AA$ Co thickness. In-plane MCD signals first appears at 10$\AA$ Co thickness and gradually increases up to 24$\AA$ Co thickness. Between 10$\AA$ and 20$\AA$ Co thickness, in-plane and out-of-plane MCD signal coexist. The formation of multi-domain structure or the existence of tilted magnetic easy axis is an possible scenario for such an interesting coexistence. The effect of interface roughness was also tested by measuring MCD signal on Co films deposited on un-annealed Pd(111) surface. Out-of-plane MCD signal was observed up to 8$\AA$ Co thickness and the anisotropy of MCD signal at 4$\AA$ Co thickness was very large with respect to that of Co film deposited on the smooth substrate. Above 8$\AA$ thickness, there exists only in-plane MCD signal. From above results, it was concluded that both Pd capping and interface roughness induce and reenforce the perpendicular magnetic anisotropy. The large perpendicular magnetic anisotropy of Co/Pd multilayer system made by sputtering method can be well understood from our results.

• Journal of the Korean Magnetics Society
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• v.10 no.5
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• pp.196-202
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• 2000

Top synthetic spin valves with structure Ta/NiFe/CoFe/Cu/CoFe(P1)/Ru/CoFe(P2)/FeMn/Ta on Si(100) substrate with natural oxide were prepared by dc magnetron sputtering system, and investigated on the magnetoresistance properties and effective exchange bias field. As the thickness of FeMn increased above 150 $\AA$, MR ratio was decreased due to the current shunting effect. As the thickness of free layer decreased below 40$\AA$, MR ratio was reduced rapidly. In case of 40 $\AA$ thick of free layer, spin valve film with a structure Si(100)/Ta(50 $\AA$)/NiFe(27 $\AA$)/CoFe(13 $\AA$)/Cu(26 $\AA$)/CoFe(30 $\AA$)/Ru(7 $\AA$)/CoFe(15 $\AA$)/FeMn(100 $\AA$)/Ta(50 $\AA$) exhibited maximum MR ratio of 7.5 % and an effective exchange bias field of 600 Oe, respectively. Thickness difference dependence in this synthetic spin valve structure on effective exchange field was investigated and interpreted by the analytical method. It should be noted that thickness increase of CoFe(P 1) and decrease of CoFe(P2) in synthetic antiferromagnet leaded to the decrease in effective exchange bias field by experimentally and analytically.

• Journal of Sensor Science and Technology
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• v.17 no.4
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• pp.281-288
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• 2008

Polyacrylonitrile(PAN)/metal oxide(MO) nanocomposite mats with a thickness of 0.12 mm were electrospun by adding 0 to 10 wt% of MO nanoparticles ($Fe_2O_3$, ZnO, $SnO_2$, $Sb_2O_3-SnO_2$) into PAN. Pt electrode was patterned on $Al_2O_3$ substrate by DC sputtering and then the PAN(/MO) mats on the Pt patterned $Al_2O_3$ were electrically wired to investigate the $CO_2$ gas sensing properties. As the MO content rose, the fiber diameter decreased due to the presence of lumps caused by the presence of MOs in the fiber. The PAN/2% ZnO mat revealed a faster response time of 93 s and a relatively short recovery of 54 s with a ${\Delta}R$ of 0.031 M${\Omega}$ at a $CO_2$ concentration of 200 ppm. The difference in sensitivity was not observed significantly for the PAN/MO fiber mats in the $CO_2$ concentration range of 100 to 500 ppm. It can be concluded that an appropriate amount of MO nanoparticles in the PAN backbone leads to improvement of the $CO_2$ gas sensing properties.

• The Korean Journal of Ceramics
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• v.6 no.2
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• pp.100-102
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• 2000

Co fine particles were dispersed in Au metal and $AlO_x$ amorphous matrices by vacuum evaporation and rf-sputtering, respectively, thus forming granular composite films having chemical compositions of $Co_{0.59}-Au_{0.41}$ and $Co_{0.52}/(AlO_x$)_{0.48}$. The films were annealed at 200~$500^{\circ}C$ to increase the size of the Co particles, from 30$\AA$ to 180$\AA$ in the Au matrix and 40$\AA$ to 180$\AA$ in the $AlO_x$ matrix, as revealed by X-ray diffraction analysis. The Co metal in as-deposited films have saturation magnetization equivalent to that of bulk Co, which is unchanged by the annealing, showing that the Co metal is not oxidized by the annealing. Magneto-optical Kerr rotation measured at $\lambda$=400-900nm for the $Co_{0.59}-Au_{0.41}$ film as deposited is larger than that calculated for the composition. The rotation increases as the film is annealed at $200^{\circ}C$ and $300^{\circ}C$, approaching to that of bulk Co. The Kerr rotation for the $Co_{0.52}-(AlO_x)_{0.48}$ film as deposited is smaller than that calculated for the composition based on Bruggeman effective medium theory. However, the rotation increases much, exceeding the rotation of the bulk Co as annealed at $300^{\circ}C$ and $400^{\circ}C$. As a possible origin of the marked magneto-optical enhancement a weak localization of light in granular structure is suggested.

• Journal of the Korean Magnetics Society
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• v.6 no.5
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• pp.323-328
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• 1996

NiFe($60\;{\AA}$)/Cu($60\;{\AA}$)/Co($30\;{\AA}$) trilayers were formed on the $4^{\circ}$ tilt-cut Si(111) substrate by rf magnetron sputtering method. With a Cu($50\;{\AA}$) underlayer, NiFe($60\;{\AA}$)/Cu($60\;{\AA}$)/Co($30\;{\AA}$) trilayers developed in-plane magnebc anisotropy and in-plane perpendicular alignment of easy axes in two magnetic components of NiFe($60\;{\AA}$)/Cu($60\;{\AA}$)/Co($30\;{\AA}$) trilayers has been found. The easy axis of Co layer consisbng of NiFe($60\;{\AA}$)/Cu($60\;{\AA}$)/Co($30\;{\AA}$) trilayers turned out to be along $4^{\circ}$ tilt Si <112> direcbon and that of NiFe layer along Si <110> direction. [NiFe($60\;{\AA}$)/Cu($60\;{\AA}$)/Co($30\;{\AA}$)]/Cu($50\;{\AA}$)/Si(111, $4^{\circ}$ tiIt-cut) trilayers showed about 2.2 % MR ratio at room temperature and large plateau in MR curves, which are more improved MR characteristics than those in [NiFe($60\;{\AA}$)/Cu($60\;{\AA}$)/Co($30\;{\AA}$)]/Cu($50\;{\AA}$)/glass trilayers with no appreciable magnetic anisotropy.

• Journal of the Korean Magnetics Society
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• v.11 no.5
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• pp.211-216
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• 2001

Top synthetic spin valves wi th structure Ta/NiFe/CoFe/Cu/CoFe(Pl)/Ru/CoFe(P2)/FeMn/Ta on Si (100) substrate with SiO$_2$ of 1500 were prepared by dc magnetron sputtering system. We have changed only the thickness of the free layer and the thickness difference (Pl-P2) in the two ferromagnetic layers separated by Ru, and investigated the effect of magnetic film thickness on the GMR properties and the interlayer coupling field in a spin valve with a synthetic antiferromagnet. As thickness difference of pinned layer was decreased from +25 to -25 , MR ratio was decreased gradually. However, there was a dip zone indicating a big change of MR ratio around Pl = P2, which can be due to the large canting of pinned layers. The modified Neel model was suggested for the top synthetic spin valve to explain the interlayer coupling field according to the thickness change of ferromagnetic layers. The interlayer coupling field was decreased due to the magnetostatic coupling (orange peel coupling) as suggested by model. However, the interlayer coupling field was not explained at the dip zone by the modified Neel model. The deviation of modified Neel model at the dip zone could be due to the largely canting of the pinned layers as well, which depends on different thickness in synthetic antiferromagnetic structure.