• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.7-10
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• 1992

CoNiCr/Cr and CoCrTa/Cr for longitudinal magnetic recording media were. prepared on Coming 7059 glass by RF magnetron sputtering. The thickness of Cr underlayer was varied from 500 to $3000{\AA}$ and. that of magnetic layer was $700{\AA}$. Coercivity and squareness were measured using V.S.M.(vibrating sample magnetometer). The coercivity of films increased with increasing Cr thickness when the films were unannealed. The coercivity of the films annealed in a 10 mtorr vacuum increased initially with annealing time and then saturated with further increase in annealing time. The coercivity value difference between the unannealed and annealed films increased with increasing the thickness of Cr underlayer No significant change was found in squareness after anneal, regardless of Cr underlayer thickness.

• Journal of the Korean Society for Heat Treatment
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• v.24 no.1
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• pp.16-22
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• 2011

Al-Co/AlN-Co multilayer films with different layer thicknesses were prepared by using a two-facing target type D.C sputtering (TFTS) system. The deposited films were annealed isothermally at different temperatures and their microstructure, magnetic properties and resistivity were investigated. The magnetization of as-deposited films is very small irrespective of layer thickness. It was found that annealing conditions and layer thickness ratio (LTR) of Al-Co to AlN-Co can control the microstructure as well as the physical properties of the prepared films. The resistivity and magnetization increase and the coercivity decreases with decreasing LTR. High resistivity and sufficient magnetization were obtained for the films with LTR = 0.35. Films having such considerable magnetization and resistivity will be a potential candidate to be used for a high density recording material.

• Bulletin of the Korean Chemical Society
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• v.29 no.4
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• pp.758-760
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• 2008

Nanoporous AAO (Anodic Aluminum Oxide) membranes have many advantages as a template for variety of magnetic materials. Materials can be embedded into the pores by electrodeposition, sputtering or magnetic-field-assisted infiltration of magnetic nanoparticles. This work focuses on the fabrication of the magnetic structures in the AAO templates by electrodeposition. Our method allows the controlled growth of Co nanostructures within the porous alumina membrane in the form of dots, rods and long wires. The shape of Co nanostructures has been investigated by field emission scanning electron microscope (FESEM). The magnetic hysteresis loops of Co nanostructures were measured using SQUID at 5 K and 300 K. The magnetic properties of the Co nanostructures are proportional to their aspect ratios and can be controlled by changing the aspect ratios.

• Journal of the Korean Magnetics Society
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• v.9 no.1
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• pp.41-47
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• 1999

$Buffer/[NiFe/Cu/CoFe(Co)/Cu]_N$ spin valve multilayers prepared by dc magnetron sputtering on a corning glass substrate using NiFe and CoFe(Co) posses different coercivities. Dependence of magnetoresistance on the type and thickness of buffer layer, thickness of Cu, NiFe, stacking number of multilayer, substrate temperature and annealing temperature in the form $[NiFe/Cu/CoFe(Co)/Cu]_N$ spin-valve multilayers were investigated. To evaluate effect of magnetoresistance for this samples, X-ray diffraction analysis, vibrating sample magnetometer analysis, and magnetoresistance measurement (4-probe method) were performed the maximum magnetoresistance ratio and coercivity were 7.5 % and 140 Oe, respectively for $Cr-50{\AA}/[NiFe-20{\AA}/Cu-{\AA}/Co-20{\AA}/Cu-50{\AA}]_10$ at substrate temperature of 9$0^{\circ}C$. Magnetoresistance slope maintained 0.25%/Oe until 15$0^{\circ}C$ of annealing temperature, and then decreased to 0.03%/Oe at 20$0^{\circ}C$. It was confirmed that the main factor of thermal stability was deteriorating of soft magnetic properties in the NiFe layer.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.2
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• pp.98-103
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• 2013

In this work, we investigated the enhanced performance of IZO-based TFTs with $HfSiO_x$ gate insulators. Four types of $HfSiO_x$ gate insulators using different diposition powers were deposited by co-sputtering $HfO_2$ and Si target. To simplify the processing sequences, all of the layers composing of TFTs were deposited by rf-magnetron sputtering method using patterned shadow-masks without any intentional heating of substrate and subsequent thermal annealing. The four different $HfSiO_x$ structural properties were investigated x-ray diffraction(XRD), atomic force microscopy(AFM) and also analyzed the electrical characteristics. There were some noticeable differences depending on the composition of the $HfO_2$ and Si combination. The TFT based on $HfSiO_x$ gate insulator with $HfO_2$(100W)-Si(100W) showed the best results with a field effect mobility of 2.0[$cm^2/V{\cdot}s$], a threshold voltage of -0.5[V], an on/off ratio of 5.89E+05 and RMS of 0.26[nm]. This show that the composition of the $HfO_2$ and Si is an important factor in an $HfSiO_x$ insulator. In addition, the effective bonding of $HfO_2$ and Si reduced the defects in the insulator bulk and also improved the interface quality between the channel and the gate insulator.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.103-103
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• 2003

• Electrical & Electronic Materials
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• v.16 no.1
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• pp.62.2-62
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• 2003

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.43.1-43.1
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• 2007

• Proceedings of the Optical Society of Korea Conference
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• 2005.02a
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• pp.354-355
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• 2005

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.143.2-143
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• 2003