• Journal of the Korean Chemical Society
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• v.54 no.6
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• pp.766-770
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• 2010

This is the study of magnetic properties of transition metal doped diluted magnetic semiconductors(DMSs). The wurtzite structure samples were synthesized by the sol-gel method. The thermodynamic characteristics and magnetic properties of $Zn_{1-x}Co_xO$ single phase was investigated for different doping concentration (x = 0%, 1%, 2%, 3%, 4%, 5%, 10%, 15%). The property of diluted magnetic semiconductors has been comfirmed by X-ray diffraction (XRD), Scanning Electronic Microscope (SEM) and Vibrating sample magnetometer (VSM). The magnetic properties of pure $Zn_{1-x}Co_xO$ is found to be dominated by the ferromagnetic interaction between doped transition metal ions, where by the ferromagnetic coupling strength is simply increased with the concentration(>5%) of the doped transition metal.

• Applied Chemistry for Engineering
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• v.19 no.5
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• pp.477-483
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• 2008

$La_{0.7}Sr_{0.3}Co_{0.2}Fe_{0.8}O_{3-{\delta}$ oxide was synthesized by a citrate method and a typical dense membrane of perovskite oxide has been prepared using as-prepared powder by pressing and sintering at $1300^{\circ}C$. Precursor of $La_{0.7}Sr_{0.3}Co_{0.2}Fe_{0.8}O_{3-{\delta}$ prepared by citrate method was investigated by TGA and XRD. Metal-citrate complex in precursor was decomposed into perovskite oxide in the temperature range of $260{\sim}410^{\circ}C$ but XRD results showed $SrCO_3$ existed as impurity at less than $900^{\circ}C$. Electrical conductivity of membrane increased with increasing temperature but then decreased over $700^{\circ}C$ in air atmosphere ($Po_2=0.2atm$) and $600^{\circ}C$ in He atmosphere ($Po_2=0.01atm$) respectively due to oxygen loss from the crystal lattice. The oxygen permeation flux increased with increasing temperature and maximum oxygen permeation flux of $La_{0.7}Sr_{0.3}Co_{0.2}Fe_{0.8}O_{3-{\delta}$ membrane with 1.6 mm thickness was about $0.31cm^3/cm^2{\cdot}min$ at $950^{\circ}C$. The activation energy for oxygen permeation was 88.4 kJ/mol in the temperature range of $750{\sim}950^{\circ}C$. Perovskite structure of membrane was not changed after permeation test of 40 h and the membrane was stable without secondary phase change with 0.3 mol Sr addition.

• Transactions of the Korean hydrogen and new energy society
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• v.28 no.1
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• pp.1-8
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• 2017

Cu/Mn/Ce catalysts for water gas shift (WGS) reaction were synthesized by urea-nitrate combustion method with the fixed molar ratio of Cu/Mn as 1:4 and 1:1 with the doping concentration of Ce from 0.3 to 0.8 mol%. The prepared catalysts were characterized with SEM, BET, XRD, XPS, $H_2$-TPR, $CO_2$ TPD, $N_2O$ chemisorption analysis. The catalytic activity tests were carried out at a GHSV of $28,000h^{-1}$ and a temperature range of 200 to $400^{\circ}C$. The Cu/Mn(CM) catalysts formed Cu-Mn mixed oxide of spinel structure ($Cu_{1.5}Mn_{1.5}O_4$) and manganese oxides ($MnO_x$). However, when a small amount of Ce was doped, the growth of $Cu_{1.5}Mn_{1.5}O_4$ was inhibited and the degree of Cu dispersion were increased. Also, the doping of Ce on the CM catalyst reduced the reduction temperature and the base site to induce the active site of the catalyst to be exposed on the catalyst surface. From the XPS analysis, it was confirmed that maintaining the oxidation state of Cu appropriately was a main factor in the WGS reaction. Consequently, Ce as support and dopant in the water gas shift reaction catalysts exhibited the enhanced catalytic activities on CM catalysts. We found that proper amount of Ce by preparing catalysts with different Cu/Mn ratios.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.386-386
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• 2012

For white light emitting diode (LED) applications, it has been reported that Y3Al5O12:Ce3+ (YAG:Ce) in nano-sized phosphor performs better than it does in micro-sized particles. This is because nano-sized YAG:Ce can reduce internal light scattering when coated onto a blue LED surface. Recently, there have been many reports on the synthesis of nano-sized YAG particles using bottom-up method, such as co-precipitation method, sol-gel process, hydrothermal method, solvothermal method, and glycothermal method. However, there has been no report using top-down method. Top-down method has advantages than bottom-up method, such as large scale production and easy control of doping concentration and particle size. Therefore, in this study, nano-sized YAG:Ce phosphors were synthesized by a high energy beads milling process with varying beads size, milling time and milling steps. The beads milling process was performed by Laboratory Mill MINICER with ZrO2 beads. The phase identity and morphology of nano-sized YAG:Ce were characterized by X-ray powder diffraction (XRD) and field-emission scanning electron microscopy (FESEM), respectively. By controlling beads size, milling time and milling steps, we synthesized a size-tunable and uniform nano-sized YAG:Ce phosphors which average diameters were 100, 85 and 40 nm, respectively. After milling, there was no impurity and all of the peaks were in good agreement with YAG (JCPDS No. 33-0040). Luminescence and quantum efficiency (QE) of nano-sized YAG:Ce phosphors were measured by fluorescence spectrometer and QE measuring instrument, respectively. The synthesized YAG:Ce absorbed light efficiently in the visible region of 400-500 nm, and showed single broadband emission peaked at 550 nm with 50% of QE. As a result, by considering above results, high energy beads milling process could be a facile and reproducible synthesis method for nano-sized YAG:Ce phosphors.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.5
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• pp.241-246
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• 2012

$Yb^{3+}$, $Er^{3+}$ co-doped $SrMoO_4$ ($SrMoO_4$ : $Yb^{3+}/Er^{3+}$) specimens have been successfully synthesized via the complex citrate-gel method and their structural and optical properties were investigated in detail. Under 980 nm excitation, $SrMoO_4$ : $Yb^{3+}/Er^{3+}$ UC phosphors have been emitted strong green luminescence at 530 and 550 nm with weak red emission around 670 nm corresponding to the intra 4f transitions of $Er^{3+}$ ($^4F_{9/2}$, $^2H_{11/2}$, $^4S_{3/2}$) ${\rightarrow}$ $Er^{3+}$ ($^4I_{15/2}$). The optimal doping concentrations of $Er^{3+}$ and $Yb^{3+}$ ions were verified to 2/16 mol% and a possible upconversion mechanism depending on pump power dependence is studied in detail.

• Journal of Powder Materials
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• v.12 no.6 s.53
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• pp.399-405
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• 2005

Nanopowders of titanium dioxide $(TiO_2)$ incorporating the transition metal element(s) were synthesized by flame synthesis method. Single element among Fe(III), Cr(III), and Zn(II) was doped into the interior of $TiO_2$ crystal; bimetal doping of Fe and Zn was also made. The characteristics of transition-metal-doped $TiO_2$ nanopowders in the particle feature, crystallography and electronic structures were determined with various analytical tools. The chemical bond of Fe-O-Zn was confirmed to exist in the bimetal-doped $TiO_2$ nanopowders incorporating Fe-Zn. The transition element incorporated in the $TiO_2$ was attributed to affect both Ti 3d orbital and O 2p orbital by NEXAFS measurement. The bimetal-doped $TiO_2$ nanopowder showed light absorption over more wide wavelength range than the single-doped $TiO_2$ nanopowders.

• Journal of the Korean Society of Industry Convergence
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• v.23 no.1
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• pp.25-32
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• 2020

Generally, high-temperature, high-pressure, high-priced sintering equipment is used for diamond sintering, and conductivity is a problem for improving the surface modification of the sintered body. In this study, to improve the efficiency of diamond sintering, we identified a new process and material that can be sintered at low temperature, and attempted to develop a composite thin film that can be discharged by doping boron gas to improve the surface modification of the sintered body. Sintered bodies were sintered by mixing Si and two diamonds in different particle sizes based on CIP molding and HIP molding. In CVD deposition, CVD was performed using WC-Co cemented carbide using CH₄ and H₂ gas, and the specimen was made conductive using boron gas. According to the experimental results of the sintered body, as the Si content is increased, the Vickers hardness decreases drastically, and the values of tensile strength, Young's modulus and fracture toughness greatly increase. Conductive CVD deposited diamond was boron deposited and discharged. As the amount of boron added increased, the strength of diamond peaks decreased and crystallinity improved. In addition, considering the release processability, tool life and adhesion of the deposition surface according to the amount of boron added, the appropriate amount of boron can be confirmed. Therefore, by solving the method of low temperature sintering and conductivity problem, the possibility of solving the existing sintering and deposition problem is presented.

• Applied Chemistry for Engineering
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• v.24 no.6
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• pp.611-615
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• 2013

Vanadium oxide ($VO_2$) and tungsten-doped vanadium oxide (W-$VO_2$) powder, well known as thermochromic materials, were prepared from vanadium pentoxide ($V_2O_5$) and oxalic acid dihydrate by hydrothermal and calcination process. The crystal structure and thermochromic property of samples were analyzed using FE-SEM, XRD, XPS, DSC, and UV-Vis-NIR spectroscopy. With increasing the doping amount of W, the phase transition temperature of W-$VO_2$ sample decreased from $70^{\circ}C$ to $42^{\circ}C$. When heating W-$VO_2$ sample above the phase transition temperature, the UV-Vis-NIR spectrum was not changed in the visible range and shifted towards a low transparency in the full name (NIR) region.

• Journal of Radiation Protection and Research
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• v.28 no.2
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• pp.87-95
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• 2003

The fabrication process and the structure of PIN semiconductor detectors have been designed optimally by simulation for doping concentration and width of p+ layer, impurities re-contribution due to annealing and the current distribution due to guard ring at the sliced edges. The characteristics to radiation response has been also simulated in terms of Monte Carlo Method. The device has been fabricated on n type, $400\;{\Omega}cm$, orientation <100>, Floating-Zone silicon wafer using the simulation results. The leakage current density of $0.7nA/cm^2/100{\mu}m$ is achieved by this process. The good linearity of radiation response to Cs-137 was kept within the exposure ranges between 5 mR/h and 25 R/h. This proposed process could be applied for fabricating a PIN semiconductor detector for measuring individual dose.

• Current Photovoltaic Research
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• v.3 no.1
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• pp.21-26
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• 2015

High efficiency $Cu(In,Ga)Se_2$ solar cells are generally prepared above $500^{\circ}C$. Lowering the process temperature can allow wider selection of substrate material and process window. In this paper, the three-stage co-evaporation process widely used to grow CIGS thin film at high temperature was modified to reduce the maximum substrate temperature. Below $400^{\circ}C$ the CIGS films show poor crystal growth and lower solar cell performance, in spite of external Na doping by NaF. As a new approach, Cu source instead of Cu with Se in the second stage was applied on the $(In,Ga)_2Se_3$ precursor at $400^{\circ}C$ and achieved a better crystal growth. The distribution of Ga in the films produce by new method were investigated and solar cells were fabricated using these films.