• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.7
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• pp.87-95
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• 2013

In this paper, 2.5 Gb/s burst-mode clock and data recovery(CDR) is presented. Digital frequency calibration scheme is adopted to eliminate mismatch between the input data rate and the output frequency of the gated voltage controlled oscillator(GVCO) in the clock recovery circuitry. A jitter rejection scheme is also used to reduce jitter caused by input data. The proposed burst-mode CDR is designed using 0.11 ${\mu}m$ CMOS technology. Post-layout simulations show that peak-to-peak jitter of the recovered data is 14 ps with 0.1 UI input referred jitter, and maximum tolerance of consecutive identical digit(CID) is 2976 bits without input data jitter. The active area occupies 0.125 $mm^2$ without loop filter and the total power consumption is 94.5 mW.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.653-654
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• 2006

A Pre-emphasis transmitter for DRAM bus system has achieved 3.2Gbps/pin operation at 1.8V supply voltage with 0.18um CMOS process. The transmitter has 800MHz PLL to generate 4 phase clocks. The 4 phase clocks are used for input clock of PRBS and multiplexing. One tap pre-emphasis is used to reduce inter symbol interference (ISI) caused by channel low pass effects. The analog calibration makes the optimized driver impedance independent with the PVT variation.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.9 no.8
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• pp.3103-3120
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• 2015

This paper presents a single-phase energy metering chip with built-in calibration function to measure electric power quantities. The entire chip consists of an analog front end, a filter block, a computation engine, a calibration engine, and an external interface block. The key design issues are how to reduce the implementation costs of the computation engine from repeatedly used arithmetic operations and how to simplify calibration procedure and reduce calibration time. The proposed energy metering chip simplifies the computation engine using time-division multiplexed arithmetic units. It also provides a simple and fast calibration scheme by using integrated digital calibration functionality. The chip is fabricated with 0.18-μm six-layer metal CMOS process and housed in a 32-pin quad-flat no-leads (QFN) package. It operates at a clock speed of 4096 kHz and consumes 9.84 mW in 3.3 V supply.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.95-98
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• 2012

This paper describes a multiphase delay-locked loop (DLL) that generates a 32-phase output clock over the operating frequency range of 40 MHz to 280 MHz. The matrix-based delay line is used for high resolution of 1-bit delay. A calibration scheme, which improves the linearity of a delay line, is achieved by calibrating the nonlinearity of the input stage of the matrix. The multi-phase DLL is fabricated by using 0.11-${\mu}m$ CMOS process with a 1.2 V supply. At the operating frequency of 125MHz, the measurement results shows that the DNL is less than +0.51/-0.12 LSB, and the measured peak-to-peak jitter of the multi-phase DLL is 30 ps with input peak-to-peak jitter of 12.9 ps. The area and power consumption of the implemented DLL are $480{\times}550{\mu}m^2$ and 9.6 mW at the supply voltage of 1.2 V, respectively.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.8
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• pp.80-85
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• 2009

In this paper, we propose a full digital capacitive sensing touch key reducing the effects due to the variations of resistance and clock frequency. The proposed circuit consists of two capacitive loads to measure and a resistor between the capacitive loads. The method measures the delays of the resistor and two capacitive loads, respectively. The ratio of the two delays is represented as the ratio of the two capacitive loads and is irrelative to the resistance and the clock frequency if quantization error is disregarded. Experimental results show the proposed scheme efficiently reduces the effects due to the variations of clock frequency and resistance. Further more the method has 1.04[pF] resolution and can be used as a touch key.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.4
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• pp.433-448
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• 2012

A source-synchronous receiver based on a delay-locked loop is presented. It employs a shared global calibration control between channels, yet achieves channel expandability for high aggregate I/O bandwidth. The global calibration control accomplishes skew calibration, equalizer adaptation, and phase lock of all the channels in a calibration period, resulting in the reduced hardware overhead and area of each data lane. In addition, the weight-adjusted dual-interpolating delay cell, which is used in the multiphase DLL, guarantees sufficient phase linearity without using dummy delay cells, while offering a high-frequency operation. The proposed receiver is designed in the 90-nm CMOS technology, and achieves error-free eye openings of more than 0.5 UI across 9-28 inch Nelco4000-6 microstrips at 4-7 Gb/s and more than 0.42 UI at data rates of up to 9 Gb/s. The data lane occupies only $0.152mm^2$ and consumes 69.8 mW, while the rest of the receiver occupies $0.297mm^2$ and consumes 56.0 mW at the 7- Gb/s data-rate and supply voltage of 1.35 V.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.165-168
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• 2002

As the demand for higher data-rate chip-to-chip communication such as memory-to-controller, processor-to-processor increases, low cost high-speed serial links\ulcorner become more attractive. This paper describes a 0.25-fm CMOS 1.6Gbps/pin 4-level transceiver using Stub Series Terminated Logic for high Bandwidth. For multi-gigabit/second application, the data rate is limited by Inter-Symbol Interference (ISI) caused by channel low pass effects, process-limited on-chip clock frequency, and serial link distance. The proposed transceiver uses multi-level signaling (4-level Pulse Amplitude Modulation) using push-pull type, double data rate and flash sampling. To reduce Process-Voltage-Temperature Variation and ISI including data dependency skew, the proposed high-speed calibration circuits with voltage swing controller, data linearity controller and slew rate controller maintains desirable output waveform and makes less sensitive output. In order to detect successfully the transmitted 1.6Gbps/pin 4-level data, the receiver is designed as simultaneous type with a kick - back noise-isolated reference voltage line structure and a 3-stage Gate-Isolated sense amplifier. The transceiver, which was fabricated using a 0.25 fm CMOS process, performs data rate of 1.6 ~ 2.0 Gbps/pin with a 400MHB internal clock, Stub Series Terminated Logic ever in 2.25 ~ 2.75V supply voltage. and occupied 500 * 6001m of area.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.1 s.343
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• pp.59-64
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• 2006

The slope of the ramp generator in a single slope ADC(analog-to-digital converter) suffers from process and frequency variation. This variation in ramp slope causes ADC gain variation and eventually limits the performance of the ISP(image signal processing) in a CIS(CMOS image sensor) that uses the single slope ADC. This paper proposes a ramp slope BISC(built-in-self-calibration) scheme for CIS. The CIS with proposed BISC was fabricated with a $0.35{\mu}m$ process. The measurement results show that the proposed architecture effectively calibrate the ramp slope against process and clock frequency variation. The silicon area overhead is less than $0.7\%$ of the full chip area.

• Journal of IKEEE
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• v.26 no.4
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• pp.659-670
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• 2022

An 830-Mb/s/pin transceiver for a controller supporting ×32 LPDDR2 memory is designed. The transmitter consists of eight unit circuits has an impedance in the range of 34Ω ∽ 240Ω, and its impedance is controlled by an impedance correction circuit. The transmitted DQS signal has a phase shifted by 90° compared to the DQ signals. In the receive operation, the read time calibration is performed by per-pin skew calibration and clock-domain crossing within a byte. The implemented transceiver for the LPDDR2 memory controller is designed by using a 55-nm process using a 1.2V supply voltage and has a maximum signal transmission rate of 830 Mb/s/pin. The area and power consumption of each lane are 0.664 mm² and 22.3 mW, respectively.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.40 no.12
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• pp.2503-2510
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• 2015

This paper presents a single-phase energy measurement IC to measure electric power quantities. The entire IC includes two programmable gain amplifiers (PGAs), two ${\sum}{\Delta}$ modulators, a reference circuit, a low-dropout (LDO) regulator, a temperature sensor, a filter unit, a computation engine, a calibration control unit, registers, and an external interface block. The proposed energy measurement IC is fabricated with $0.18-{\mu}m$ CMOS technology and housed in a 32-pin quad-flat no-leads (QFN) package. It operates at a clock speed of 4,096 kHz and consumes 10 mW in 3.3 V supply.