• Korean Chemical Engineering Research
• /
• 제50권1호
• /
• pp.177-181
• /
• 2012

본 연구에서는 $TiO_2$ 필름에 그라핀나노시트(graphenenanosheet, GNS)의 양을 다르게 함으로써 형성한 전극을 이용하여 염료감응형 태양전지를 제작하였고 그 특성을 연구하였다. $TiO_2$-GNS 혼합물 전극은 단순한 혼합방식에 의하여 제작되었으며, N3를 염료로 사용하여 태양전지의 효율을 평가하였다. $TiO_2$-GNS 혼합물 전극을 사용한 염료감응형 태양전지의 전환효율은 GNS의 양에 의해 영향을 받았으며, $TiO_2$에 GNS를 0.01 wt% 혼합한 전극을 사용하여 제작한 염료감응형 태양전지가 가장 높은 효율인 5.73%를 나타내었다. 이는 GNS를 혼합하지 않은 전극을 사용한 태양전지보다 26% 높은 효율이었다. 이와 같은 효율 증가의 원인으로는 GNS 첨가에 의한 N3의 흡착량 증가, 전자 재결합(electron recombination)과 back transport reaction의 감소, 전자 수송의 증가로부터 기인한 것으로 생각된다. 본 연구에서 $TiO_2$(anatase)와 GNS의 존재는 Field-Emission Scanning Electron Microscopy를 통하여 확인하였으며, 흡착된 염료의 양은 자외선분광기(UV-vis Spectroscopy), 전자 재결합의 감소 및 전자 수송에 대한 분석은 전기화학적 임피던스분광법(Electrochemical Impedance Spectroscopy)을 이용하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집
• /
• pp.234-237
• /
• 2001

FeSi$_2$/Si Layer were grown using FeSi$_2$, Si wafer by the chemical transport reaction method. The directoptical energy gap was found to be 0.871ev at 300 K. The Hall effect is a physical effect arising in matter carrying electric current in the presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. In this paper, we study electrical properties of FeSi$_2$/Si layer And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important Part for it application Various phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집
• /
• pp.230-233
• /
• 2001

FeSi$_2$ Layer were grown using FeSi$_2$, Si wafer by the chemical transport reaction method. The directoptical energy gap was found to be 0.87leV at 300 K. The Hall effect is a Physical effect arising in matter carrying electric current in the presence of a magnetic field. The effect is named after the American physicist E.H. Hall, who discovered it in 1879. In this paper, we study electrical properties of FeSi$_2$/Si layer. And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it application various phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• 대한기계학회논문집
• /
• 제18권10호
• /
• pp.2712-2723
• /
• 1994

Numerical simulation of an axisymmetric ethylene-air jet diffusion flame has been carried out in order to investigate flame dynamics and soot formation. The model solves the time-dependent Navier-Stokes equations and includes models for soot formation, chemical reaction, molecular diffusion, thermal conduction, and radiation. Numerically FCT(Flux Corrected Transport) and DOM(Discrete Ordinate Method) methos are used for convection and radiation trasport respectively. Simulation was conducted for a 5 cm/sec fuel jet flowing into a coflowing air stream. The maximum flame temperature was found to be approximately 2100 K, and was located at an axial position of approximately 5 cm from the base of the flame. The maximum soot volume fraction was about $7{\times}10^{-7}$, and was located within the high temperature region where the fuel mole fraction ranges from 0.01 to 0.1. The buoyancy-driven low-frequency(12~13 Hz) structures convected along the outer region of the flame were captured. In case without radiation trasport, the maximum temperature was higher by 150 K than in case with radiation. Also the maximum soot volume fraction reached about $8{\times}10^{-6}$. As the the hydrocarbon fuel forms many soot particles, the radiation transport becomes to play a more important role.

• 전기화학회지
• /
• 제14권3호
• /
• pp.138-144
• /
• 2011

본 연구에서는 순환전위법으로 발생되는 전기화학적 신호를 모사하기 위한 전산프로그램을 구현하여, 전극주변에서 발생하는 전자 및 이온의 전달현상을 해석하였다. 물질확산이 지배적인 계에 대하여 반무한 확산모델과 전극반응만을 고려하여 지배방정식과 경계조건을 설정하였다. 순환전위법의 수치해를 구하기 위하여 양함수 유한차분법을 적용하였으며, MATLAB을 이용하여 프로그램을 작성하였다. 10 mM의 $K_3Fe(CN)_6$와 0.1 M KCl 전기화학계를 이용하여 ITO glass 전극에서 순환전위법을 실시하여 실험의 결과와 수치해를 비교하였다. 본 연구에서 구현된 프로그램은 실험 결과를 전반적으로 잘 예측하고 있으며, 특히 주사속도가 낮을수록 실험결과들이 수치해에 보다 근접하고 있었다. 주사속도에 부가하여 순환전위법에서 전극면적, 전극반응속도상수 그리고 전자이동수의 영향들을 정량적으로 고려할 수 있었다.

• 한국전기전자재료학회논문지
• /
• 제21권12호
• /
• pp.1057-1062
• /
• 2008

The ${\alpha}-In_2S_3:Co^{2+}$ single crystal with a good quality and stabilized property were gained successfully by the CTR(Chemical Transport Reaction)method. XRD analysis showed that the grown single crystals were cubic structure. The optical absorption spectra of ${\alpha}-In_2S_3:Co^{2+}$ single crystal showed impurity absorption peaks due to cobalt impurity. These impurity absorption pesks were assigned to the ligand transition between the split energy levels of $Co^{2+}$ ions sited in $T_d$ symmetry of these semiconductor host lattice.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제49권7호
• /
• pp.382-387
• /
• 2000

The $CdAl_2S_4 and CdAl_2S_4 : Co^{2+}$ single crystals were grown by the chemical transport reaction method using iodine as a transport agent. The $CdAl_2S_4 and CdAl_2S_4 : Co^{2+}$single crystals were crystallized into a defect chalcopyrite structure. The optical energy gap of the $CdAl_2S_4 and CdAl_2S_4 : Co^{2+}$ single crystals was found to be 3.377 eV and 2.924 eV, respectively, at 300 K. Blue emission with peaks in 456nm~466nm at 280K was observed in the $CdAl_2S_4$ single crystal. Optical absorption and emission peaks due to impurities in the $CdAl_2S_4 Co^{2+}$ single crystal were observed and described as originating from the electron transition between energy levels of the $Co^{2+} ion sited at the Td symmetry point.

• Korean Membrane Journal
• /
• 제8권1호
• /
• pp.1-12
• /
• 2006

In semiconductor industries, dissolved oxygen is one of the most undesirable contaminants of ultrapure water. A method for dissolved oxygen removal (DOR) consists in the use of polymeric hollow fibres, loaded with a catalyst and fed with a reducing agent such as hydrogen. In this work, PVDF hollow fibres loaded with Pd were characterized by means of perporometry, scanning electron microscopy (SEM), energy dispersive X-ray (EDX). The hollow fibre analyzed shows a five-layer structure with remarkable morphological differences. An estimation of pore diameters and their distribution was performed giving a mean pore diameter of 100 nm. The permeance and selectivity of the fibres were measured using $H_2,\;N_2,\;O_2$ as single gases, at different operating conditions. An $H_2$ permeance of $37 mmol/m^2s$ was measured and $H_2/O_2$ and $H_2/N_2$ selectivities of ca. 3 were obtained. $H_2$ permeance was 1/3 when a water stream flows in the shell side. Catalytic fibrebehaviour was simulated using a mathematical model for a loop membrane reactor, considering only $O_2$ and $H_2$ diffusive transport inside the membrane and their catalytic reaction. Dimensionless parameters such as the Thiele modulus are employed to describe the system behaviour. The model agrees well with the experimental reaction data.

• 한국진공학회지
• /
• 제2권4호
• /
• pp.486-490
• /
• 1993

Cd4SnSea6 & Cd4SnSe6 : Co2+ single crystals were grown by the chemical transport reaction (CTR) method. The grown single crystlas crrystallize in the monoclinic structrue and have the direct band gaps. The energy gaps of them are 1.68eV for Cd4SnSea6 & Cd4SnSe6 : Co2+ at 293K. The impurity opticla absorption peaks due to cobalt dped with impurity appear at 4879cm-1, 5392cm-1 and 6247 com-1, and are attributed to the electron transitions between the split energy levels of Co2+ ion sited at Td symmetry of Cd4SnSe6 single crystal.

• Advances in Energy Research
• /
• 제1권1호
• /
• pp.53-78
• /
• 2013

Methane carbon dioxide reforming (MCDR) is a promising way of utilizing greenhouse gas for hydrogen-rich fuel production. Compared with other types of reactors, Compact Reformers (CRs) are efficient for fuel processing. In a CR, a thin solid plate is placed between two porous catalyst layers to enable efficient heat transfer between the two catalyst layers. In this study, the physical and chemical processes of MCDR in a CR are studied numerically with a 2D numerical model. The model considers the multi-component gas transport and heat transfer in the fuel channel and the porous catalyst layer, and the MCDR reaction kinetics in the catalyst layer. The finite volume method (FVM) is used for discretizing the governing equations. The SIMPLEC algorithm is used to couple the pressure and the velocity. Parametrical simulations are conducted to analyze in detail the effects of various operating/structural parameters on the fuel processing behavior.