• Title/Summary/Keyword: chemical shift

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Improved Load Sharing Rate in Paralleled Operated Lead Acid Batteries (납 축전지의 병렬운전시 부하분담률 개선)

  • 반한식;최규하
    • The Transactions of the Korean Institute of Power Electronics
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    • v.6 no.1
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    • pp.34-42
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    • 2001
  • A battery is the device that transforms the chemical energy into the direct-current electrical energy directly without a mechanical process. Unit cells are connected in series to obtain the required voltage, while being connected in parallel to organize capacity for load current and to decrease the internal resistance for corresponding the sudden shift of the load current. Because the voltage droop down in one set of battery is faster than in tow one, it amy result in the low efficiency of power converter with the voltage drop and cause the system shutdown. However, when the system being driven in parallel, a circular-current can be generated. The changing current differs in each set of battery because the system including batteries, rectifiers and loads is connected in parallel and it makes the charge voltage constant. It is shown that, as a result the new batteries are heated by over-charge and over-discharge, and the over charge current increases rust of the positive grid and consequently shortens the lifetime of the new batteries. The difference between the new batteries and old ones is the amount of internal resistance. In this paper, we can detect the unbalance current using the micro-processor and achieve the balance current by adjusting resistance of each set. The internal resistance of each set becomes constant and the current of charge and discharge comes to be balanced by inserting the external resistance into the system and calculating the change of internal resistance.

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Quantitative Evaluation of Optimized Fat-Suppression Techniques for T1 Weighted Cervical Spine MR Imaging: Comparison of TSE-CHESS and TSE-SPAIR (T1 강조 경추자기공명영상에 대한 최적의 지방소거기법의 정량적 평가: TSE-CHESS 과 TSE-SPAIR 의 비교)

  • Goo, Eun-Hoe
    • Journal of Digital Convergence
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    • v.11 no.11
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    • pp.529-536
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    • 2013
  • The purpose of this study is to know clinical usefulness for fat suppression of the body curved portion compared with TSE-CHESS and TSE-SPAIR technique. A total of 25 normal volunteers without cervical spine disease were studied on a 3.0 T MRI scanner. As a quantitative analysis, PSNRs and CNRs were evaluated by using two methods for fat suppression of the body curved portion. As a results, PSNRs and CNRs for fat suppression were significantly greater for the TSE-SPAIR technique compared to TSE-CHESS technique. In conclusion, this study showed that a TSE-SPAIR technique has improved PSNRs and CNRs for evaluating of fat suppression in the body curved portion. These conclusions in the future will be provided information in diagnosis of fat suppression for the body curved portion.

Thermal Characterization of an EPDM/IIR Rubber Blend using TG/DTG Anylsis (TG/DTG 방법에 의한 EPDM/IIR 고무 블렌드의 열분석)

  • Ahn, Won-Sool
    • Elastomers and Composites
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    • v.42 no.1
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    • pp.55-58
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    • 2007
  • Thermal Characterization of an EPDM/IIR rubber blend was performed using TG/DTG analysis. While TGA thermograms of a virgin EPDM and IIR showed their own characteristic thermal decomposition curves, that of an EPDM/IIR blend sample showed a characteristic curve, exhibiting both decomposition characteristics of EPDM and IIR. This finding was more clarified from DTG analysis obtained by differentiation of TGA thermograms, being exhibited as two distinct shifted-peaks. Degrees of peak-shift (${\Delta}T$) compared to their original positions were $+25\;^{\circ}C$ for IIR and $-15\;^{\circ}C$ for EPDM, respectively. From these facts, thermal stability of EPDM is considered comparatively better than IIR, and moreover, it can be an evidence for the characteristics of a partial compatibility between EPDM and IIR. It is noteworthy that, if we prepare in advance a calibration curve for the composition about EPDM/IIR blend, it may be possible to analyze quantitatively an EPDM/IIR blend, using comparatively simple TGA experiments as in the present work.

Adsorption Behaviors of Metal Elements onto Illite and Halloysite (일라이트, 할로이사이트에 대한 중금속 원소의 흡착특성)

  • 추창오;김수진;정찬호;김천수
    • Journal of the Mineralogical Society of Korea
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    • v.11 no.1
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    • pp.20-31
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    • 1998
  • Adsorption of metal elements onto illite and halloysite was investigated at $25^{\circ}C$ using pollutant water collected from the gold-bearing metal mine. Incipient solution of pH 3.19 was reacted with clay minerals as a function of time: 10 minute, 30 minute, 1 hour, 12 hour, 24 hour, 1 day, 2 day, 1 week, and 2 week. Twenty-seven cations and six anions from solutions were analyzed by AAs (atomic absorption spectrometer), ICP(induced-coupled plasma), and IC (ion chromatography). Speciation and saturation index of solutions were calculated by WATEQ4F and MINTEQA2 codes, indicating that most of metal ions exist as free ions and that there is little difference in chemical species and relative abundances between initial solution and reacted solutions. The adsorption results showed that the adsorption extent of elements varies depending on mineral types and reaction time. As for illite, adsorption after 1 hour-reaction occurs in the order of As>Pb>Ge>Li>Co, Pb, Cr, Ba>Cs for trace elements and Fe>K>Na>Mn>Al>Ca>Si for major elements, respectively. As for halloysite, adsorption after 1 hour-reaction occurs in the order of Cu>Pb>Li>Ge>Cr>Zn>As>Ba>Ti>Cd>Co for trace elements and Fe>K>Mn>Ca>Al>Na>Si for major elements, respectively. After 2 week-reaction, the adsorption occurs in the order of Cu>As>Zn>Li>Ge>Co>Ti>Ba>Ni>Pb>Cr>Cd>Se for trace elements and Fe>K>Mn>Al, Mg>Ca>Na, Si for major elements, respectively. No significant adsorption as well as selectivity was found for anions. Although halloysite has a 1:1 layer structure, its capacity of adsorption is greater than that of illite with 2:1 structure, probably due to its peculiar mineralogical characteristics. According to FTIR (Fourier transform infrared spectroscopy) results, there was no shift in the OH-stretching bond for illite, but the ν1 bond at 3695 cm-1 for halloysite was found to be stronger. In the viewpoint of adsorption, illite is characterized by an inner-sphere complex, whereas halloysite by an outer-sphere complex, respectively. Initial ion activity and dissociation constant of metal elements are regarded as the main factors that control the adsorption behaviors in a natural system containing multicomponents at the acidic condition.

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Effects of Lanthanides-Substitution on the Ferroelectric Properties of Bismuth Titanate Thin Films Prepared by MOCVD Process

  • Kim, Byong-Ho;Kang, Dong-Kyun
    • Journal of the Korean Ceramic Society
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    • v.43 no.11 s.294
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    • pp.688-692
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    • 2006
  • Ferroelectric lanthanides-substituted $Bi_4Ti_3O_{12}$ $(Bi_{4-x}Ln_xTi_3O_{12}, BLnT)$ thin films approximately 200 nm in thickness were deposited by metal organic chemical vapor deposition onto Pt(111)/Ti/SiO$_2$/Si(100) substrates. Many researchers reported that the lanthanides substitution for Bi in the pseudo-perovskite layer caused the distortion of TiO$_6$ octahedron in the a-b plane accompanied with a shift of the octahedron along the a-axis. In this study, the effect of lanthanides (Ln=Pr, Eu, Gd, Dy)-substitution and crystallization temperature on their ferroelectric properties of bismuth titanate $(Bi_4Ti_3O_{12}, BIT)$ thin films were investigated. As BLnT thin films were substituted to lanthanide elements (Pr, Eu, Gd, Dy) with a smaller ionic radius, the remnant polarization (2P$_r$) values had a tendency to increase and made an exception of the Eu-substituted case because $Bi_{4-x}Eu_xTi_3O_{12}$ (BET) thin films had the smaller grain sizes than the others. In this study, we confirmed that better ferroelectric properties can be expected for films composed of larger grains in bismuth layered peroskite materials. The crystallinity of the thin films was improved and the average grain size increased as the crystallization temperature,increased from 600 to 720$^{\circ}C$. Moreover, the BLnT thin film capacitor is characterized by well-saturated polarization-electric field (P-E) curves with an increase in annealing temperature. The BLnT thin films exhibited no significant degradation of switching charge for at least up to $1.0\times10^{11}$ switching cycles at a frequency of 1 MHz. From these results, we can suggest that the BLnT thin films are the suitable dielectric materials for ferroelectric random access memory applications.

A Study on the Current-Voltage Characteristics of Self-Assembled Nitro-group and Methoxy-group Organic Molecules by Using STM (STM을 이용한 자기조립된 니트로기와 메톡시기 유기분자의 전압-전류 특성 연구)

  • Kim, Seung-Un;Park, Sang-Hyun;Park, Jae-Chul;Shin, Hoon-Kyu;Kwon, Young-Soo
    • Proceedings of the KIEE Conference
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    • 2004.11a
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    • pp.212-214
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    • 2004
  • In this study, we fabricated the organic thin film by self-assembly method by using nitro-group and methoxy-group organic molecule. Also, we selected the organic single molecule in organic thin film and measured current-voltage characteristics by using scanning tunneling microscopy. The Organic molecules that use in an experiment is 4,4'-(diethynylphenyl)-2'-nitro-1-benzen ethiol and 4-[2,5-dimethoxy-4-ph enylethynylphenyl]ethynylphenylethanthiol. 4,4'-(dimet hynylphenyl)-2'-nitro-1-benzenethiol is applied widely in molecular electronic device and 4-[2,5-dime thoxy-4-phenylethynylphenyl]ethynylphenylethanthiol composed in Korea Research Institute of Chemical Technology. To be confirmed the formation of the self-assembled monolayers, we observed the real time frequency shift of the QCM and investigated surface of the self-assembled monolayers the using STM. With this, we measured current to the organic single molecule, in condition of the air state. As a result, we confirmed in constant voltage that properties of negative differential resistance. Using properties of negative differential resistance to get from this study, application is expected to be molecular switching device, memory device and logic device.

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An Evaluation of Multiple-input Dual-output Run-to-Run Control Scheme for Semiconductor Manufacturing

  • Fan, Shu-Kai-S.;Lin, Yen
    • Industrial Engineering and Management Systems
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    • v.4 no.1
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    • pp.54-67
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    • 2005
  • This paper provides an evaluation of an optimization-based, multiple-input double-output (MIDO) run-to-run (R2R) control scheme for general semiconductor manufacturing processes. The controller in this research, termed adaptive dual response optimizing controller (ADROC), can serve as a process optimizer as well as a recipe regulator between consecutive runs of wafer fabrication. In evaluation, it is assumed that the equipment model could be appropriately described by a pair of second-order polynomial functions in terms of a set of controllable variables. Of practical relevance is to consider a drifting effect in the equipment model since in common semiconductor practice the process tends to drift due to machine aging and tool wearing. We select a typical application of R2R control to chemical mechanical planarization (CMP) in semiconductor manufacturing in this evaluation, and there are five different CMP process scenarios demonstrated, including mean shift, variance increase, and IMA disturbances. For the controller, ADROC, an on-line estimation technique is implemented in a self-tuning (ST) control manner for the adaptation purpose. Subsequently, an ad hoc global optimization algorithm based on the dual response approach, arising from the response surface methodology (RSM) literature, is used to seek the optimum recipe within the acceptability region for the execution of next run. The main components of ADROC are described and its control performance is assessed. It reveals from the evaluation that ADROC can provide excellent control actions for the MIDO R2R situations even though the process exhibits complicated, nonlinear interaction effects between control variables, and the drifting disturbances.

Characterization of Water Hyacinth (Eichhornia crassipes) Biomass and Evaluation of Applicability as an Organic Filler to Papermaking (부레옥잠 바이오매스의 특성분석과 제지적용성 평가)

  • Kim, Dong Sung;Heo, Yoon Sung;Sung, Yong Joo;Han, Seung-Won;Seo, Cheol Mo
    • Journal of Korea Technical Association of The Pulp and Paper Industry
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    • v.46 no.5
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    • pp.79-87
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    • 2014
  • The enrichment with nutrients in rivers and lakes becomes serious problems in Korea. As the environmental friendly solution, the phytoremediation are getting more attention and the water hyacinth could be a strong candidate plant for this. Water hyacinth is a free floating freshwater plant proven to be a effective plant used for a purification of a polluted lakes, sewage wastewater, and livestock wastewater. The biggest obstacles for application of water hyacinth in Korea could be the disposal of the water hyacinth before winter, because there is no feasible use for the water hyacinth until now. In this study, the characteristics of water hyacinth were deeply investigated for providing background data to develop appropriate application of the water hyacinth. The water hyacinth was fractioned three parts, leaf, air blader, root of which morphological properties were evaluated with microscope and field emission scanning electron microscope (FE-SEM). The water contents of each parts of the water hyacinth were 87% for leaf, 96.5% for air bladder, 94.6% for root. The chemical compositions of each parts were also measured and showed around 29% of hot water extract in leaf and air bladder, 42% holocellulose for leaf, 47% holocellulose for air bladder. The application of water hyacinth biomass without root parts to papermaking provided bulkier structure, but the tensile strength was decreased.

Effects of growth interruption on the photoluminescence characteristics of InGaAs/InP quantum wells (성장정지효과에 의한 InGaAs/InP 양자우물구조의 Photoluminescence 특성 변화)

  • 문영부;이태완;김대연;윤의준;유지범
    • Journal of the Korean Vacuum Society
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    • v.7 no.2
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    • pp.104-111
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    • 1998
  • The InGaAs/InP quantum wells(QWs) were grown by low pressure metalorganic chemical vapor deposition and the effects of growth interruption steps on their interfacial structures were investigated by measuring photoluminescence spectra. When InP or InGaAs surface was treated under the same group V ambient, the full width at half maximum (FWHM) of the QW peak increased possibly due to the incorporation of impurities during the growth interruption time. When InP surface was treated under $AsH_3$, howerer, the PL peak showed red-shift due to the As-P exchange reaction and the change of FWHM was not remarkable. The effective thickness of InAs interfacial layer formed during $AsH_3$, treatment on the InP surface was calculated to be 1~2 monolayers. In the case of InGaAs treatment under $PH_3$, the PL peak energy and the FWHM increasied. This results suggest that $PH_3$ treatment on the InGaAs surface suppresses the incorporation of As into the subsequent InP layer and the local replacement of As by P occurs simultaneously.

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Assessment of Material Degradation of High-Temperature Components for Process Plant by Grain Boundary Etching Method (입계부식법에 의한 공정설비 고온요소의 재질열화 평가)

  • Han Sang In;Yoon Kee Bong;Kim Ji Yoon;Chung Se Hi
    • Journal of the Korean Institute of Gas
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    • v.2 no.1
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    • pp.74-82
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    • 1998
  • The grain boundary etching method as a technique for assessing degradation of structural materials used at elevated temperature has received much attention since it is simple, inexpensive and easy to apply to real plant components. In this study, the technique is applied to some aged petroleum and chemical plant components such as reactors and drums. As a degradation parameter, intersection number ratio ($N_i/N_o$), is employed. The intersection number ratio ($N_i/N_o$) is defined as the ratio of intersection number ($N_i$) obtained from 5-minute picric acid etched surface to the number ($N_o$) obtained from Nital etched surface. In order to study degradation level, several relationships were measured such as the correlation between shift in ductile brittle transition temperature, $({\Delta}DBTT)_{sp}$ and intersection number ratio, ($N_i/N_o$) and the correlation between the measured ($N_i/N_o$) values and Larson-Miller Parameter values.

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