• New Physics: Sae Mulli
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• v.68 no.11
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• pp.1203-1207
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• 2018

In this study, silica nanowires were formed using silicon oxide films with different oxygen contents, and their microstructure and physical properties were compared with those of silica nanowires formed using Si wafers. The silicon oxide films were fabricated by using a plasma-enhanced chemical vapor deposition method. Silica nanowires were formed by thermally annealing silicon oxide films coated with nickel films as a catalyst. In the case of silicon oxide films having an oxygen content of approximately 50 at.% or less, the formation mechanism, microstructure, and physical properties of the nanowires were not substantially different from those of the silicon wafer. In particular, the uniformity of the thickness showed better behavior in the silicon oxide films. These results imply that silicon oxide films can be used as an alternative for fabricating high-quality silica nanowires at low cost.

• Korean Journal of Materials Research
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• v.12 no.11
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• pp.860-864
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• 2002

$Li^{+}$ extraction reactions with ion-exchange type lithium manganese oxide in an aqueous phase were examined using chemical and x-ray diffraction (XRD) analysis. In the process of extraction reaction, the lithium manganese oxide showed a topotactic extraction of $Li^{+ }$ in the aqueous phase mainly through an ion-exchange mechanism, and the $Li^{+}$ extracted samples indicated a high selectivity and a large capacity for $Li^{+}$ . The electronic structures and chemical bonding properties were also studied using a discrete variational (DV)-X$\alpha$ molecular orbital method with cluster model of (Li$Mn_{12}$ $O_{40}$ )$^{27-}$ for tetrahedral sites and ($Li_{7}$ Mn $O_{38}$ )$^{3}$ for octahedral site in $Li_{1.33}$ $Mn_{1.67}$ / $O_{4}$ respectively. Li in the manganese oxides is highly ionized in both sites, but the net charge of Li was greater for tetrahedral sites than octahedral. These calculations suggest that the tetrahedral sites have higher $Li^{+}$ $H^{+}$ exchangeability than the octahedral sites, and are preferable for the selective adsorption for L $i^{+}$ ions.s.

• Clean Technology
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• v.21 no.2
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• pp.108-116
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• 2015

Hydrogen sulfide and ammonia are one of the common malodorous compounds that can be found in emissions from many sewages treatment plants and industrial plants. Therefore, removing these harmful gases from emissions is of significance in both life and industry because they can cause health problems to human and detrimental effects on the catalysts. In this work, pyrolytic carbon blacks from waste tires were used to develop adsorbent with good adsorption capacity for removal of hydrogen and ammonia. Pellet-type adsorbents were prepared by a mixture of carbon black, metal oxide and sodium hydroxide or hydrochloric acid, and their adsorption capacities were estimated by using breakthrough curve of a continuous fixed bed adsorption column at ambient condition. The adsorbent manufactured with a mixture of carbon black, iron oxide(III) and sodium hydroxide showed the maximum working capacity of hydrogen sulfide. For ammonia, maximum working capacity was obtained by the adsorbent manufactured with a mixture of carbon black, copper oxide(II) and hydrochloric acid.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.3
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• pp.705-711
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• 2000

A thin film oxide semiconductor micro gas sensor array which shows only 60 mW of power consumption at an operating temperature of $300^{\circ}C$ has been fabricated using microfabrication and micromachining techniques. Excellent thermal insulation of the membrane is achieved by the use of a double-layer structure of $0.1\mum\; thick\; Si_3N_4 \;and\; 1 \mum$ thick phosphosilicate glass (PSG) prepared by low-pressure chemical-vapor deposition (LPCVD) and atmospheric-pressure chemical-vapor deposition (APCVD), respectively. The sensor array consists of such thin film oxide semiconductor sensing materials as 1 wt.% Pd-doped $SnO_2,\; 6 wt.% A1_2O_3-doped\; ZnO,\; WO_3$/ and ZnO. Baseline resistances of the four sensing materials were found to be stable after the aging for three days at $300^{\circ}C$. The thin film oxide semiconductor micro gas sensor array exhibited resistance changes usable for subsequent data processing upon exposure to various gases and the sensitivity strongly depended on the sensing layer materials.

• Journal of the Korean Chemical Society
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• v.42 no.6
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• pp.657-663
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• 1998

New asymmetric dimer, 7,7'-substituted (or H)-4-oxo-2,2'- dialkyl-l,l',2,2'-dibenzothiazine-3,3'dicarboxylic acid methyl ester-1,1,1',1'-tetraoxide 3,4'-yl ethers 2a-d were synthesized through the oxidative dimerization of 7-substituted (or H)-4-hydroxy-2-alkyl-1,2-benzothiazine-3-carboxylic acid methyl ester 1,1-dioxides la-d using silver oxide($Ag_2O$). 4-Oxo-2,2'-dialkyl-1,1'2,2'-dibenzothiazine-3,3'-dicarboxylic acid methyl ester-1,1,1',l'-tetraoxide 3,4'-yl ether 2c was identified by X-ray crystal structure determination.

• Journal of the Korean Chemical Society
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• v.40 no.1
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• pp.1-10
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• 1996

Gibbs' adsorption isotherms are studied to assay the structural effects of ethylene oxide (EO) and propylene oxide (PO) moieties on the molecular area and the interfacial tension behavior of molecules at the interface. Several industrial alcohols and isomerically pure alcohols, which have a general stucture of C4H9O(EO)m(PO)nH, are examined for their cosurfactant properties. They are high molecular weight alcohols and more surface active than the cosurfactants usually used. Results show that the number and the sequence of EO and PO units significantly affect the molecular areas and the interfacial tension (IFT) behavior of these molecules at the water/oil interface. The following conclusions are drawn from the result: 1) PO is more efficient in lowering the IFT and less effective in adsorption than EO. 2) For molecules having the same molecular weight but different structures, smaller molecules are more efficient in lowering the IFT. 3) When more EO, PO, or both units are added to the same hydrophobe, the molecule become bigger and more efficient in lowering the IFT.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.2
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• pp.315-322
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• 2002

A thin film oxide semiconductor micro gas sensor array which shows only 60㎽ of power consumption at an operating temperature of 30$0^{\circ}C$ has been fabricated using microfabrication and rnicrornachining techniques. Excellent thermal insulation of the membrane is achieved by the use of a double la! or structure of 0.1${\mu}{\textrm}{m}$ thick Si$_3$N$_4$ and 1${\mu}{\textrm}{m}$ thick phosphosilicate glass(PSG) prepared by low pressure chemical vapor deposition(LPCVD) and atmospheric－pressure chemical-vapor deposition(APCVD), respectively. The sensor way consists of such thin film oxide semiconductor sensing materials as 1wt.％ Pd-doped SnO$_2$, 6wt.% AI$_2$O$_3$-doped ZnO, WO$_3$ and ZnO. The thin film oxide semiconductor micro gas sensor array exhibited resistance changes usable for subsequent data processing upon exposure to various gases and the sensitivity strongly depended on the sensing layer materials. Heater Part of the sensor structure has been modified in order to improve the process yield of the sensor, and as a result of modified heater structure improved process yield has been achieved.

• Applied Chemistry for Engineering
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• v.18 no.2
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• pp.142-147
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• 2007

In this study, mesoporous tin oxide was synthesized by sol-gel method using $C_{16}TMABr$ surfactant as a template in a basic condition. The optimum conditions for the synthesis of mesoporous $SnO_2$ were investigated and the obtained samples were characterized by XRD, nitrogen adsorption and TEM analysis. A mesoporous and nanostructured $SnO_2$ gas sensor with Au electrode and Pt heater has been fabricated on alumina substrate as one unit via a screen printing process. Sensing abilities of fabricated sensors were examined for CO and $CH_4$ gases, respectively, at $350^{\circ}C$ in the concentration range of 1~10,000 ppm. Influence of loading amount of palladium impregnated on $SnO_2$ was also tested in detection of those gases. High sensitivity to detecting gases and the fast response speed with stability were obtained with the mesoporous tin oxide sensor as compared to a non-porous one under the same detection conditions.

• Journal of the Korean Ceramic Society
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• v.41 no.3
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• pp.183-189
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• 2004

Cuprous oxide (Cu$_2$O) thin films are cathodically deposited on Indium Tin Oxide (ITO) substrate. The as-deposited films were heat-treated at 30$0^{\circ}C$ to obtain Cu$_2$O. After the heat treatment, the film was changed from Cu metal into Cu$_2$O phase. The phase, morphology and photocurrent density of the films were dependent on the preparation conditions of deposition time, applied voltage, and the duration of heat treatment. The Cu$_2$O films were characterized by X-Ray Diffractometer (XRD) and Scanning Electron Microscope (SEM). The apparent grain size of the films formed by the normal method was larger than those grown by the pulse method. The CU$_2$O film what was deposited at -0.7 V for 300 sec and then, calcined at 30$0^{\circ}C$ for 1 h showed the predominant photocurrent density of 1048 $\mu$A/$\textrm{cm}^2$. And the stability of Cu$_2$O electrodes were improved with chemically deposited TiO$_2$ thin films on Cu$_2$O.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.304.1-304.1
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• 2014

Flat-panel displays have been growing as an essential everyday product in the current information/communication ages in the unprecedented speed. The forward-coming applications require light-weightness, higher speed, higher resolution, and lower power consumption, along with the relevant cost. Such specifications demand for a new concept-based materials and applications, unlike Si-based technologies, such as amorphous Si and polycrystalline Si thin film transistors. Since the introduction of the first concept on the oxide-based thin film transistors by Hosono et al., amorphous oxide thin film transistors have been gaining academic/industrial interest, owing to the facile synthesis and reproducible processing despite of a couple of shortcomings. The current work places its main emphasis on the binary oxides composed of ZnO and SnO2. RF sputtering was applied to the fabrication of amorphous oxide thin film devices, in the form of bottom-gated structures involving highly-doped Si wafers as gate materials and thermal oxide (SiO2) as gate dielectrics. The physical/chemical features were characterized using atomic force microscopy for surface morphology, spectroscopic ellipsometry for optical parameters, X-ray diffraction for crystallinity, and X-ray photoelectron spectroscopy for identification of chemical states. The combined characterizations on Zn-Sn-O thin films are discussed in comparison with the device performance based on thin film transistors involving Zn-Sn-O thin films as channel materials, with the aim to optimizing high-performance thin film transistors.