• Carbon letters
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• v.25
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• pp.14-24
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• 2018

Electrochemical properties and performance of composites performed by incorporating metal oxide or metal hydroxide on carbon materials based on graphene and carbon nanotube (CNT) were analyzed. From the surface analysis by field emission scanning electron microscopy and field emission transmission electron microscopy, it was confirmed that graphene, CNT and metal materials are well dispersed in the ternary composites. In addition, structural and elemental analyses of the composite were conducted. The electrochemical characteristics of the ternary composites were analyzed by cyclic voltammetry, galvanostatic charge-discharge tests, and electrochemical impedance spectroscopy in 6 M KOH, or $1M\;Na_2SO_4$ electrolyte solution. The highest specific capacitance was $1622F\;g^{-1}$ obtained for NiCo-containing graphene with NiCo ratio of 2 to 1 (GNiCo 2:1) and the GNS/single-walled carbon $nanotubes/Ni(OH)_2$ (20 wt%) composite had the maximum specific capacitance of $1149F\;g^{-1}$. The specific capacitance and rate-capability of the $CNT/MnO_2/reduced$ graphene oxide (RGO) composites were improved as compared to the $MnO_2/RGO$ composites without CNTs. The $MnO_2/RGO$ composite containing 20 wt% CNT with reference to RGO exhibited the best specific capacitance of $208.9F\;g^{-1}$ at a current density of $0.5A\;g^{-1}$ and 77.2% capacitance retention at a current density of $10A\;g^{-1}$.

• Journal of the Korean Chemical Society
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• v.28 no.4
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• pp.231-237
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• 1984

The x-values in the nonstoichiometric chemical formulas $YO_{1.5+x}\;and\;HoO_{1.5+x}$, have been measured in the temperature range from 700$^{\circ}$C to 1000$^{\circ}$C under oxygen pressures from $2{\times}l0^{-1}\;to\;1{\times}10^{-6}$ atm by gravimetric method. The observed x-values increase with increasing temperature and oxygen pressure. The enthalpies of formation of excess oxygen in yttrium oxide and holmium oxide decrease with decreasing oxygen pressure and are all positive values representing an endothermic process. The 1/n values calculated from the slopes of the plots of log x vs. log $P_{O2}$ increase with temperature and are positive values which means the higher oxygen pressure dependence at higher temperature. We have examined the nonstoichiometric defect and conduction mechanism from x-values and thermodynamic data.

• Korean Chemical Engineering Research
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• v.47 no.1
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• pp.105-110
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• 2009

IZO thin films have been deposited on poly(ethylene terephthalate) flexible substrate under varying radio frequency (rf) power, process pressure and thickness of IZO films using rf magnetron sputtering under $Ar/O_2$ gas mix. As the process pressure increased, the deposition rate was slightly increased and the transmittance showed little change, but the resistivity was increased. With increasing rf power, the great increase in deposition rate was observed but the transmittance showed a slight change only, and the resistivity was decreased. In addition, an attempt was made to find the optimal thickness of IZO films under varying the thickness of IZO films at the process conditions of 1 mTorr pressure and 90 W rf power, which showed lowest resistivity. IZO thin films with the thickness of $1,500{\AA}$ showed lowest resistivity and also showed highest transmittance around the wavelength zone of the maximum absorption. The power conversion efficiency of solar cells fabricated using various transparent electrodes with different thicknesses were measured and the solar cell with IZO electrode of $1,500{\AA}$ showed the maximum conversion-efficiency of 2.88 %.

• Journal of the Korean institute of surface engineering
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• v.51 no.2
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• pp.116-125
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• 2018

Aluminum-doped zinc oxide (AZO) is a commonly used material for the front contact layer of chalcopyrite $CuInGaSe_2$ (CIGS) based thin film solar cells since it satisfies the requisite optical and electrical properties with low cost and abundant elemental availability. Low-resistivity and high-transmission front contacts have been developed for high-performance CIGS solar cells, and nearly meet the required performance. However, the durability of the cell especially for the corrosion resistance of AZO films has not been studied intensively. In this work, AZO films were prepared on Corning glass 7059 substrates by radio frequency magnetron sputtering depending on the hydrogen content. The electrical and optical properties and electrochemical corrosion resistance of the AZO films were evaluated as a function of the hydrogen content. With increasing hydrogen content to 6 wt%, the crystallinity, crystal size, and surface roughness of the films increased, and the resistivity decreased with increased carrier concentration, Hall mobility, oxygen vacancies, and $Zn(OH)_2$ binding on the AZO surface. At a hydrogen content of 6 wt%, the corrosion resistance was also relatively high with less columnar morphology, shallow pore channels, and lower grain boundary angles.

• Applied Chemistry for Engineering
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• v.9 no.4
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• pp.463-468
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• 1998

When sulfuric acid was added in HCl etching solution, corrosion of aluminum metal was inhibited by the chemical adsorption of sulfate ions. In the presence of $SO_4^{-2}$, cyclic voltammetry showed that the protective oxide film was formed on the inner surfaces of etch pits and, pit density was increased by nucleation on both the aluminum surface and the pits inside. Structure and distribution of etch pits found in AC etching of aluminum were strongly influenced by the concentration of $SO_4^{-2}$ and the amount of cathodic pulse charging. Below $0.8mC/cm^2$ of cathodic pulse charging, oxide films formed inside actively dissolving pits indicated the higher resistance to pit nucleation as the concentration of $SO_4^{-2}$ increases. However, the structural change of oxide films occurred above the $0.8mC/cm^2$ charging and the effect of $SO_4^{-2}$ was minimized, and it resulted in the rapid formation of etch pits.

• Korean Chemical Engineering Research
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• v.53 no.2
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• pp.131-136
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• 2015

The nanostructural graphene/vanadium oxide (graphene/$V_2O_5$) composite with enhanced capacitance was synthesized by the electro-deposition in 0.5 M $VOSO_4$ solution. The morphology of composites was characterized using scanning electron microscopy (SEM), x-ray diffraction pattern (XRD), and x-ray photoelectron spectroscopy (XPS). The oxidation states of the electro-deposited vanadium oxide was found to be $V^{5+}$ and $V^{4+}$. The morphology of the prepared graphene/$V_2O_5$ composite exhibits a netlike nano-structure with $V_2O_5$ nanorods in about 100 nm diameter, which could lead a better contact between electrolyte an electrode. The composite with a deposition time of 4,000 s exhibits the specific capacitance of $854mF/cm^2$ at a scan rate of 20 mV/s and the capacitance retention of 53% after 1000 CV cycles.

• Journal of the Korean Chemical Society
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• v.36 no.1
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• pp.147-156
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• 1992

Supported lead oxide catalysts were prepared by using ${\alpha}-,{\beta}-{\gamma}$-alumina, and MgO as a support. Among the supported lead oxide catalysts, MgO-supported catalyst showed the highest $C_2^+$ hydrocarbon selectivity for the methane conversion into $C_2^+$ hydrocarbons, but ${\gamma}$-alumina-supported PbO catalyst gave the highest $CO_2$ selectivity. And ${\alpha}$-alumina-supported catlyst showed the midium activity, whereas ${\beta}$-alumina-supported catalyst gave little activity. These reaction characteristics seemed to be largely dependent on the acticity of lattice oxygens in supported catalysts, which would be influnto be largely dependent on the activity of lattice oxygens in supported catalysts, which would be influenced in the interaction between the supports and lead oxides and the properties of supports. Especially, much higher ration of (002)/(111) peak intensities for PbO phase on MgO support than on the other supports in X-ray diffraction analysis was considered to be ab evidence that methane oxidative coupling of methane might be so-called structure-sensitive reaction, and this seemed to be an example of surface oxide-support interaction (SOSI) in the oxidative coupling reaction.

• Korean Journal of Materials Research
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• v.5 no.6
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• pp.706-714
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• 1995

Silicon oxide thin films were deposited by remote plasma chemical vapor deposition (RPCYD). The effect of the operating variables, such as plasma power, deposition temperature and partial pressure of reactant on the material Properties of the silicon oxide film was investigated. By XPS, it was found out that the film was suboxide (O/Si<2) and small amount of nitrogen due to the plasma excitation was accumulated at the Si/SiO$_2$interface. The amount of dangling bonds at the Si/SiO$_2$interfaces were measured by ESR and the concentration of hydrogen bond was obtained by SIMS and FT-IR. The bond angle distribution(d$\theta$/$\theta$) was shown to be similiar to thermal oxide above 20$0^{\circ}C$ but the etch rate was higher than that of the thermal oxides due to the structural difference and the stress between silicon substrate and silicon oxide film.

• Korean Journal of Materials Research
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• v.12 no.7
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• pp.528-532
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• 2002

Anodic $TiO_2$film on Ti substrate was fabricated at 180V in sulfuric acid solutions containing phosphoric acid and hydrogen peroxide. Effects of the anodizing conditions on the morphology of the oxide layers, and chemical states of the component elements of the layers were studied primarily using SEM, XRD, AFM, and XPS. The pores in the oxide layer was not uniform in size, shape, and growth direction particularly near the interface between the substrate and the oxide layer, compared with those of the surface layer. The formation of irregular type of pores seemed to be attributed to spark discharge phenomena which heavily occurred during increasing the anodic voltage. The pore diameter and the cell size increased, and the number of cells per unit area decreased with the increasing time. From the XPS results, it was shown that component elements of the electrolytes, P and S, existed in the chemical states of $PO_4^{-3}$ , $P_2$$O_{5}$, $SO_4^{-2}$ , $SO_3^{-2}$ , P, S, etc., which were penetrated from the electrolytes into the oxide layer during anodization.

• Bulletin of the Korean Chemical Society
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• v.31 no.2
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• pp.479-482
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• 2010