• Title/Summary/Keyword: charge transport

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Emergence and Evolution of Organometal Halide Perovskite Solar Cell

  • Park, Nam-Gyu
    • Rapid Communication in Photoscience
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    • v.4 no.2
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    • pp.29-30
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    • 2015
  • Since the first report on long-term durable perovskite solar cell in 2012, a surge of interest in perovskite solar cell has been received due to its superb photovoltaic performance exceeding 20%. $MAPbI_3$ ($MA=CH_3NH_3$) perovskite film is able to be prepared simply by solution processesof either sequential two-step or single step procedure. Since $MAPbI_3$ shows balanced charge transport property with micrometer scale charge diffusion length, it can be applied to any kind of junction structures. Mostly studied structure is mesoscopic structure employing mesoporous oxide layer in perovskite film. Photovoltaic performance is primarilyin fluenced by the quality of perovskite film but interfaces are equally important. In this mini review, emergence and evolution of perovskite solar cell are described.

Local structure and transport properties of $La_{0.7}Ca_{0.3-x}Ba_{x}MnO_3$ manganites

  • A.N.Ulyanov;Yang, Dong-Seok;Yu, Seong-Cho
    • Proceedings of the Korean Magnestics Society Conference
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    • 2003.06a
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    • pp.62-63
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    • 2003
  • Electron-phonon interaction plays a significant role in forming of colossal magnetoresistance effect (CMR). Polaron formation was observed by neutron diffraction and by extended X-ray absorption fine structure (EXAFS) analysis. Local probe as given by the EXAFS is a useful method to study the polaronic charge and its dependence on temperature and ions size. Here we present the EXAFS study of polaronic charge in $La_{0.7}Ca_{0.3-x}Ba_{x}MnO_3$ compositions.

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Dark Conductivity in Semi-Insulating Crystals of CdTe:Sn

  • Makhniy, V.P.;Sklyarchuk, V.M.;Vorobiev, Yu.V.;Horley, P.P.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.2
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    • pp.243-248
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    • 2015
  • We prepared semi-insulating CdTe for radiation detectors by isothermal annealing of single crystals grown by Bridgeman technique in a sealed quartz container filled with Sn vapor. The resistivity of CdTe:Sn samples thus obtained was of order of $10^{10}Ohm{\cdot}cm$ at room temperature with electrons lifetime of $2{\times}10^{-8}$ s, which is appropriate for the applications desired. Analysis of electric transport characteristics depending on temperature, sample thickness and voltage applied revealed the presence of traps with concentration of about $(4-5){\times}10^{12}cm^{-3}$ with the corresponding energy level at 0.8 - 0.9 eV counted from the bottom of conduction band. The conductivity was determined by electron injection from electrodes in space charge limited current mode.

Ruthenium Oxide Electrode Deposited on 3D Nanostructured-nickel Current Collector and Its Application to Supercapacitors

  • Ryu, Ilhwan;Kim, Green;Park, Dasom;Yim, Sanggyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.181.1-181.1
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    • 2014
  • Supercapacitor is attracting growing attention for a promising energy conversion and storage device because of its desirable electrochemical properties such as rapid charge-discharge rate, high power density and long cycle life. Three-dimensional (3D) metal nanostructure has been widely studied since it can provide efficient charge transport along the 3D network in many device applications. In this work, we fabricated well-ordered 3D nickel (Ni) nanostructures using 3D-arrayed polystyrene nano-opal substrates. We also fabricated half-cell supercapacitors by electrodepositing $RuO_2$ onto these nanostructured Ni current collectors and investigated their morphological and electrochemical properties.

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Role of Surfaces and Their Analysis in Photovoltaics

  • Opila, Robert L.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.72-72
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    • 2011
  • Surface science is intrinsically related to the performance of solar cells. In solar cells the generation and collection of charge carriers determines their efficiency. Effective transport of charge carriers across interfaces and minimization of their recombination at surfaces and interfaces is of utmost importance. Thus, the chemistry at the surfaces and interfaces of these devices must be determined, and related to their performance. In this talk we will discuss the role of two important interfaces, First, the role of surface passivation is very important in limiting the rate of carrier of recombination. Here we will combine x-ray photoelectron spectroscopy of the surface of a Si device with electrical measurements to ascertain what factors determine the quality of a solar cell passivation. In addition, the quality of the heterojunction interface in a ZnSe/CdTe solar cell affects the output voltage of this device. X-ray photoelectron spectroscopy gives some insight into the composition of the interface, while ultraviolet photoemission yields the relative energy of the two materials' valence bands at the junction, which controls the open circuit voltage of the solar cell. The relative energies of ZnSe and CdTe at the interface is directly affected by the material quality of the interface through processing.

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Optimization of energy level alignment for efficient organic photovoltaics (에너지 준위 접합 최적화를 통한 유기태양전지 효율 향상법)

  • Lee, Hyunbok
    • Vacuum Magazine
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    • v.2 no.2
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    • pp.12-16
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    • 2015
  • Organic photovoltaics (OPVs) have attracted significant interest in an interdisciplinary research field for the decades as a next-generation photovoltaic device due to their unique advantages. One of requirements for OPVs having high power conversion efficiency is the favorable energy level alignment between the electrode/organic and organic/organic interfaces to manage the exciton dissociation and improve the charge transport. In this review, strategies to enhance the OPV performance by controlling the energy level alignment are discussed. The insertion of an exciton blocking layer leads to the efficient dissociation of photogenerated excitons at the donor/acceptor interface enhancing the short-circuit current density. The choice of a donor having a high ionization energy and an acceptor having a low electron affinity increases the open-circuit voltage. The insertion of an appropriate work function modifier which reduces the charge injection barrier removes the S-kink in current density-voltage characteristics of OPVs and improves the fill factor. This review would give a valuable guide to design the efficient OPV structure.

An Effect of Ethanol on Polypyrrole-Glucose Oxidase Enzyme Electrode (Polypyrrole-Glucose oxidase 효소전극의 Ethanol 첨가효과)

  • 김현철;구할본;사공건
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.147-150
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    • 1999
  • In the case of immobilizing of glucose oxidase in organic polymer using electrosynthesis, the glucose oxidase obstructs charge transfer and mass transport during the film growth. This may lead to short chained polymer and/or make charge-coupling weak between the glucose oxidase and the backbone of the polymer. That is mainly due to insulating property and net chain of the glucose oxidase. Since being the case, it is useless to increase in amount of glucose oxidase more than reasonable in the synthetic solution. We establish qualitatively that amount of immobilization can be improved by adding a little ethanol in the synthetic solution. As ethanol was added by 0.1 rnol dm" in the synthetic solution, Michaelis-Menten constants of the resulting enzyme electrode decreased from 30.7 mmol $dm^{-3}$ to about 2 mmol $dm^{-3}$. That suggests increase in affinity of the enzyme electrode for glucose and in amount of the immobilized enzyme.zyme.

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Estimation of Electrical Parameters of OD Organic Semiconductor Diode from Measured I-V Characteristics

  • Moiz, Syed Abdul;Ahmed, Mansoor M.;Karimov, Kh. S.
    • ETRI Journal
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    • v.27 no.3
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    • pp.319-325
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    • 2005
  • In this paper the effect of temperature on the electrical properties of organic semiconductor disperse orange dye 25 (OD) have been examined. Thin films of OD have been deposited on $In_{2}O_{3}$ substrates using a centrifugal machine. DC current-voltage (I-V) characteristics of the fabricated devices $(Al/OD/In_{2}O_{3)$ have been evaluated at varying temperatures ranging from 40 to $60^{\circ}C$. A rectification behavior in these devices has been observed such that the rectifying ratio increases as a function of temperature. I-V characteristics observed in $Al/OD/In_{2}O_{3)$ devices have been classified as low temperature $({\leq} 50^{\circ}C)$ and high temperature characteristics (approximately $60^{\circ}C$). Low temperature characteristics have been explained on the basis of the charge transport mechanism associated with free carriers available in OD, whereas high temperature characteristics have been explained on the basis of the trapped space-charge-limited current. Different electrical parameters such as traps factor, free carrier density, trapped carrier density, trap density of states, and effective mobility have been determined from the observed temperature dependent I-V characteristics. It has been shown that the traps factor, effective mobility, and free carrier density increase with increasing values of temperature, whilst no significant change has been observed in the trap density of states.

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Simulation of channel dimension dependent conduction and charge distribution characteristics of silicon nanowire transistors using a quantum model (양자모델을 적용한 실리콘 나노선 트랜지스터의 채널 크기에 따른 전도 및 전하분포 특성 시뮬레이션)

  • Hwang, Min-Young;Choi, Chang-Yong;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.04b
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    • pp.77-78
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    • 2009
  • We report numerical simulations to investigate of the dependence of the on/off current ratio and channel charge distributions in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width and thicknesses. In order to investigate the transport behavior in devices with different channel geometries, we have performed detailed two-dimensional simulations of SiNWFETs and control FETs with a fixed channel length L of 10um, but varying the channel width W from 5nm to 5um, and thickness t from 10nm to 30nm. We have shown that $Q_{ON}/Q_{OFF}$ drastically decreases (from ${\sim}2.9{\times}10^4$ to ${\sim}9.8{\times}10^3$) as the channel thickness increases (from 10nm to 30nm). As a result of the simulation using a quantum model, even higher charge density in the bottom of SiNW channel was observed than that in the bottom of control channel.

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Improvement of Electrochemical Properties and Thermal Stability of a Ni-rich Cathode Material by Polypropylene Coating

  • Yoo, Gi-Won;Son, Jong-Tae
    • Journal of Electrochemical Science and Technology
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    • v.7 no.2
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    • pp.179-184
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    • 2016
  • The interface between the surface of a cathode material and the electrolyte gives rise to surface reactions such as solid electrolyte interface (SEI) and chemical side reactions. These reactions lead to increased surface resistance and charge transfer resistance. It is consequently necessary to improve the electrochemical characteristics by suppressing these reactions. In order to suppress unnecessary surface reactions, we coated cathode material using polypropylene (PP). The PP coating layer effectively reduced the SEI film that is generated after a 4.3 V initial charging process. By mitigating the formation of the SEI film, the PP-coated Li[(Ni0.6Co0.1Mn0.3)0.36(Ni0.80Co0.15Al0.05)0.64)]O2(NCS) electrode provided enhanced transport of Li+ ions due to reduced SEI resistance (RSEI) and charge transfer resistance (Rct). The initial charge and discharge efficiency of the PP-coated NCS electrode was 96.2 % at a current density of 17 mA/g in a voltage range of 3.0 ~ 4.3 V, whereas the efficiency of the NCS electrode was only 94.7 %. The presence of the protective PP layer on the cathode improved the thermal stability by reducing the generated heat, and this was confirmed via DSC analysis by an increased exothermic peak.