• Journal of the Korean Institute of Telematics and Electronics
• /
• v.21 no.2
• /
• pp.71-82
• /
• 1984

A programme, called BIPOLE, for the numerical analysis of twotimensional n-p-n bipolar transistors was developed. It has included the SRH and Auger recolnbination processes, the mobility dependence on the impurity density and the electric field, and the band-gap narrowing effect. The finite difference equations of the fundamental semiconductor equations are formulated using Newton's method for Poisson's equation and the divergence theorem for the hole and electron continuity equations without physical restrictions. The matrix of the linearized equations is sparse, symmetric M-matrix. For the solution of the linearized equations ICCG method and Gummel's algorithm have been employed. The programme BIPOLE has been applied to various kinds of the steady-state problems of n-p-n transistors. For the examples of applications the variations of common emitter current gain, emitter and diffusion capacitances, and input and output characteristics are calculated. Three-dimensional representations of some D.C. physical quantities such as potential and charge carrier distributions were displayed. This programme will be used for the nome,rical analysis of the distortion phenom ana of two-dimensional n-p-n transistors. The BIPOLE programme is available for everyone.

• Journal of IKEEE
• /
• v.15 no.4
• /
• pp.324-329
• /
• 2011

In recent years, the performance and functions of portable devices has increased. so it requires more power efficiency and energy density while using the battery for a long time. therefore Battery pack which are made up from several battery cells in series in order to achieve higher operating voltage is being used. when using a Li-ion battery, we need a protection circuit to protect from overcharge, over discharge, high temperature and over current. Also, when using battery pack, we need to Cell voltage balancing circuit that each cell in tune with the balancing. In this paper, the proposed IC is applicable by mobile devices as well as E-bike, hybrid vehicles, electric vehicles, and is expected to contribute to the development of domestic PMIC.

• Journal of Magnetics
• /
• v.8 no.4
• /
• pp.138-141
• /
• 2003

$Ni_{0.65}Zn_{0.35}Fe_2O_4$thin films were prepared by using a sol-gel method. Their crystallographic, dielectric and magnetic properties were investigated as a function of Cu contents by means of an X-ray diffractometer (XRD), X-ray reflectivity, LCZ meter (NF2232), a vibrating sample magnetometer (VSM), and an atomic force microscope (AFM). From typical C-V measurements for $Ni_{0.65}Zn_{0.35}Fe_2O_4$ thin films on p-type silicon substrate, the surface charge density was calculated as 1.4 ${\mu}$C/$m^2$. The dielectric constant evaluated from the capacitance at the accumulation state was 28. The high $H_{c}$ and low $M_{sat}$ at x=0.0 and 0.1 were due to the growth of the ${\alpha}$-$Fe_2O_3$ phase having antiferromagnetic properties. The rapidly decreased $H_{c}$ and increased $M_{sat}$ at x=0.2 and 0.3 can be explained that the ${\alpha}$-$Fe_2O_3$ phases have completely disappeared at x=0.3 and so, non-magnetic defects are minimized. The $M_{sat}$ was slightly decreased and the $H_{c}$ was increased above at x=0.3 because the increase of grain boundary due to smaller grain size acts as defects during magnetization process.

• Journal of the Korean Chemical Society
• /
• v.37 no.4
• /
• pp.442-447
• /
• 1993

The thermodynamic parameters (${\Delta}$G, ${\Delta}$H and ${\Delta}$S) of lanthanides(III)-benzoylformate complexes in aqueous solution have been determined in the ionic medium of 0.1M $NaClO_4$ at 25$^{\circ}C$, using pH and enthalpy titration method. The stability constants of the lanthanide(III)-benzoylformate complexes (1 : 1) agree well with the general relationships for the bidentate ligands (e.g., log${\beta}_1$ vs. p$K_a$). Thermodynamic evidences show that the oxygen atom in ketone group is coordinated along with the carboxylate group. It is ascribed to the increasing charge density on the oxygen atom in ketone group due to the conjugation effect in the benzoylformate ligand. Thermodynamic results also indicate that the complexes are stabilized by the enthalpy effect caused by the ionic interaction of metal-oxygen bond as well as the entropy effect.

• Bulletin of the Korean Chemical Society
• /
• v.33 no.12
• /
• pp.4084-4092
• /
• 2012

Theoretical calculations based on density functional theory (DFT) were performed to study the substituent effect on the geometric and electronic structures as well as the biological behavior of technetium-99m-labeled diphosphonate complexes. Optimized structures of these complexes are surrounded by six ligands in an octahedral environment with three unpaired 4d electrons ($d^3$ state) and the optimized geometry of $^{99m}Tc$-MDP agrees with experimental data. With the increase of electron-donating substituent or tether between phosphate groups, the energy gap between frontier orbitals increases and the probability of non-radiative deactivation via d-d electron transfer decreases. The charge distribution reflects a significant ligand-to-metal electron donation. Based on the calculated geometric and electronic structures and biologic properties of $^{99m}Tc$-diphosphonate complexes, several structure-activity relationships (SARs) were established. These results may be instructive for the design and synthesis of novel $^{99m}Tc$-diphosphonate bone imaging agent and other $^{99m}Tc$-based radiopharmaceuticals.

• Journal of the Korean Ceramic Society
• /
• v.49 no.6
• /
• pp.659-662
• /
• 2012

Yttrium (Y) and niobium (Nb) doped spherical $Li_4Ti_5O_{12}$ were synthesized to improve the energy density and electrochemical properties of anode material. The synthesized crystal was $Li_4Ti_5O_{12}$, the particle size was less than $1{\mu}m$ and the morphology was spherical and well dispersed. The Y and Nb optimal doping amounts were 1 mol% and 0.5 mol%, respectively. The initial capacity of the dopant discharge and charge capacity were respectively 149mAh/g and 143 mAh/g and were significantly improved compared to the undoped condition at 129 mAh/g. Also, the capacity retention of 0.2 C/5 C was 74% for each was improved to 94% and 89%. It was consequently found that Y and Nb doping into the $Li_4Ti_5O_{12}$ matrix reduces the polarization and resistance of the solid electrolyte interface (SEI) layer during the electrochemical reaction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.8
• /
• pp.486-490
• /
• 2014

$Al_2O_3$ films on silicon carbide were fabricated by Aerosol deposition with annealing temperature at $800^{\circ}C$ and $1,000^{\circ}C$. The effect of thermal treatment on physical properties of $Al_2O_3$ thin films has been investigated by XRD (X-ray diffraction), AFM (atomic force microscope), SEM (scanning electron microscope), and AES (auger electron spectroscopy). Also electrical properties have been investigated by Keithley 4,200 semiconductor parameter analyzer to explain the interface trapped charge density ($D_{it}$), flatband voltage ($V_{FB}$) and leakage current ($I_o$). $Al_2O_3$ films become crystallized with increasing temperature by calculating full width at half maximum (FWHM) of diffraction peaks, also surface morphology is observed by topography measurement in non-contact mode AFM. $D_{it}$ was $2.26{\times}10^{-12}eV^{-1}.cm^{-2}$ at $800^{\circ}C$ annealed sample, which is the lowest value in all samples. Also the sample annealed at $800^{\circ}C$ has the lowest leakage current of $4.89{\times}10^{-13}A$.

• Transactions of the Society of Information Storage Systems
• /
• v.2 no.2
• /
• pp.96-99
• /
• 2006

In this research, a wafer-level transfer method of cantilever away on a conventional CMOS circuit has been developed for high density probe-based data storage. The transferred cantilevers were silicon nitride ($Si_3N_4$) cantilevers integrated with poly silicon heaters and piezoelectric sensors, called thermo-piezoelectric $Si_3N_4$ cantilevers. In this process, we did not use a SOI wafer but a conventional p-type wafer for the fabrication of the thermo-piezoelectric $Si_3N_4$ cantilever arrays. Furthermore, we have developed a very simple transfer process, requiring only one step of cantilever transfer process for the integration of the CMOS wafer and cantilevers. Using this process, we have fabricated a single thermo-piezoelectric $Si_3N_4$ cantilever, and recorded 65nm data bits on a PMMA film and confirmed a charge signal at 5nm of cantilever deflection. And we have successfully applied this method to transfer 34 by 34 thermo-piezoelectric $Si_3N_4$ cantilever arrays on a CMOS wafer. We obtained reading signals from one of the cantilevers.

• Proceedings of the KIEE Conference
• /
• 2007.07a
• /
• pp.1988-1989
• /
• 2007

Polyethylene is widely used as the insulator for power cable. To investigate the conduction mechanism for power cable insulation under ac high field, it is very important to acquire the dissipation current under actual running field. Recently, we have developed the unique system, which make possible to observe the nonlinear dissipation current waveform. In this system, to observe the nonlinear properties with high accuracy, capacitive current component is canceled by using inverse capacitive current signal instead of using the bridge circuit for canceling it. We have already reported that the dissipation currents of $40\;{\mu}m$ thick LDPE film at 10 kV/mm and over 140 Hz, it starts to show nonlinearity and odd number's harmonics were getting large. To investigate the conduction mechanis ms in this region, especially space charge effect, various kinds of estimation, such as time variations of instantaneous resistivity for one cycle, FFT spectra of dissipation current waveforms and so on, has been examined. As the results of these estimations, it was found that the dissipation current will depend on not only the instantaneous value of electric field but also the time differential of applied electric field due to taking a balance between applied field and internal field. Furthermore, two large peaks of dissipation current for each half cycle were observed under certain condition. In this paper, to clarify the reason why it shows two peaks for each half cycle, the film thickness dependences of dissipation current waveforms were observed by using the three different thickness LDPE films.

• Polymer(Korea)
• /
• v.28 no.3
• /
• pp.218-224
• /
• 2004

The adhesion and proliferation of mammalian cells on polymeric biomaterials depend on the surface characteristics such as wettability, chemistry, charge and roughness. In order to recognize the correlation between the adhesion and proliferation of human bone marrow derived stem cells (BMSCs) and surface property, radio frequency generated plasma treatment on low density polyethylene (LDPE) has been carried out. The modified LDPE surfaces were characterized by measuring the static water contact angle. The adhesion and proliferation of cells on LDPE films were characterized by cell counting and reverse transcription-polymerase chain reaction (RT-PCR). The water contact angle of the film surface decreased with plasma treatment time. Proto-oncogenes (c-myc, c-fos) and tumor suppressor gene (p153) showed maximum expression with contact angle of 60 ∼ 70$^{\circ}$ range of LDPE film. By cell counting, we confirmed that the rate of cell proliferation appeared the higher on the film surface of the contact angle of 60∼70$^{\circ}$ We concluded that the surface wettability is an important role for the growth and differentiation of BMSCs.