• ETRI Journal
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• v.38 no.5
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• pp.981-987
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• 2016

We present a cost-effective dual polarization quadrature phase-shift coherent receiver module using a silica planar lightwave circuit (PLC) hybrid assembly. Two polarization beam splitters and two $90^{\circ}$ optical hybrids are monolithically integrated in one silica PLC chip with an index contrast of $2%-{\Delta}$. Two four-channel spot-size converter integrated waveguide-photodetector (PD) arrays are bonded on PD carriers for transverse-electric/transverse-magnetic polarization, and butt-coupled to a polished facet of the PLC using a simple chip-to-chip bonding method. Instead of a ceramic sub-mount, a low-cost printed circuit board is applied in the module. A stepped CuW block is used to dissipate the heat generated from trans-impedance amplifiers and to vertically align RF transmission lines. The fabricated coherent receiver shows a 3-dB bandwidth of 26 GHz and a common mode rejection ratio of 16 dB at 22 GHz for a local oscillator optical input. A bit error rate of $8.3{\times}10^{-11}$ is achieved at a 112-Gbps back-to-back transmission with off-line digital signal processing.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.2
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• pp.98-103
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• 2013

In this work, we investigated the enhanced performance of IZO-based TFTs with $HfSiO_x$ gate insulators. Four types of $HfSiO_x$ gate insulators using different diposition powers were deposited by co-sputtering $HfO_2$ and Si target. To simplify the processing sequences, all of the layers composing of TFTs were deposited by rf-magnetron sputtering method using patterned shadow-masks without any intentional heating of substrate and subsequent thermal annealing. The four different $HfSiO_x$ structural properties were investigated x-ray diffraction(XRD), atomic force microscopy(AFM) and also analyzed the electrical characteristics. There were some noticeable differences depending on the composition of the $HfO_2$ and Si combination. The TFT based on $HfSiO_x$ gate insulator with $HfO_2$(100W)-Si(100W) showed the best results with a field effect mobility of 2.0[$cm^2/V{\cdot}s$], a threshold voltage of -0.5[V], an on/off ratio of 5.89E+05 and RMS of 0.26[nm]. This show that the composition of the $HfO_2$ and Si is an important factor in an $HfSiO_x$ insulator. In addition, the effective bonding of $HfO_2$ and Si reduced the defects in the insulator bulk and also improved the interface quality between the channel and the gate insulator.