• Membrane Journal
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• v.32 no.3
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• pp.173-180
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• 2022

Presence of ammonia in drinking water is very toxic to human health. Soluble ammonia contaminates ground water due to activities such as the use of fertilizer in crop, industrial effluents and burning of fossil fuel. Even low concentration of ammonia present in water will damage aqua environment such as marine organism. Membrane technology is an important process to remove ammonia from effectively from water. Flat sheet membrane, membrane contactor and membrane distillation are some of the methods used for water purification from ammonia. Membrane contractor is an efficient process in which ammonia is removed through liquid-gas or liquid-liquid mass transfer without change of phase unlike membrane distillation. However, the cost of ammonia removal in this method is high due to maintenance of very high pH. Zeolite has excellent ion exchange ability that enhances its ability to interact with ammonia and adsorb from wastewater. Mixed matrix membranes containing zeolite enhance the efficiency of ammonia adsorption and separation from wastewater. In this review the above discussed issues are summarized in detail.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2002.05a
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• pp.23-28
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• 2002

This paper describes the machining characteristics of the $MoSi_2$ based composites by electric discharge drilling with various tubular electrodes, besides, Hardness characteristics and microstructures of $Nb/MoSi_2$ laminate composites were evaluated from the variation of fabricating conditions such as preparation temperature, applied pressure and pressure holding time. $MoSi_2$ -based composites has been developed in new materials for jet engine of supersonic-speed airplanes and gas turbine for high- temperature generator. Achieving this objective may require new hard materials with high strength and high temperature-resistance. However, With the exception of grinding, traditional machining methods are not applicable to these new materials. Electric discharge machining (EDM) is a thermal process that utilizes a spark discharge to melt a conductive material, the tool electrode being almost non-unloaded, because there is no direct contact between the tool electrode and the workpiece. By combining a nonconducting ceramics with more conducting ceramic it was possible to raise the electrical conductivity. From experimental results, it was found that the lamination from Nb sheet and $MoSi_2$ powder was an excellent strategy to improve hardness characteristics of monolithic $MoSi_2$. However, interfacial reaction products like (Nb, Mo)$SiO_2$ and $Nb_2Si_3$ formed at the interface of $Nb/MoSi_2$ and increased with fabricating temperature. $MoSi_2$ composites which a hole drilling was not possible by the conventional machining process, enhanced the capacity of ED-drilling by adding $NbSi_2$ relative to that of SiC or $ZrO_2$ reinforcements.

• Journal of Electrical Engineering and Technology
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• v.13 no.4
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• pp.1638-1643
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• 2018

Multi-layer ceramic capacitors as decoupling capacitor were fabricated by dielectric composition with a high dielectric constant. The fabricated decoupling capacitors were embedded in the PCB of the 10G RF transceiver module and evaluated for the characteristics of electrical noise by the level of AC input voltage. In order to further improve the electrical properties of the $BaTiO_3$ based composite, glass frit, MgO, $Y_2O_3$, $Mn_3O$, $V_2O_5$, $BaCO_3$, $SiO_2$, and $Al_2O_3$ were used as additives. The electrical properties of the composites were determined by various amounts of additives and optimum sintering temperature. As a result of the optimized composite, it was possible to obtain a density of $5.77g/cm^3$, a dielectric constant of 1994, and an insulation resistance of $2.91{\times}10^{12}{\Omega}$ at an additive content of 5wt% and a sintering temperature of $1250^{\circ}C$. After forming a $2.5{\mu}m$ green sheet using the doctor blade method, a total of 77 layers were laminated and sintered at $1180^{\circ}C$. A decoupling capacitor with a size of $0.6mm(W){\times}0.3mm(L){\times}0.3mm(T)$ (width, length and thickness, respectively) and a capacitance of 100 nF was embedded using a PCB process for the 10G RF Transceiver modules. In the range of AC input voltage 400mmV @ 500kHz to 2200mV @ 900kHz, the embedded 10G RF Transceiver modules evaluated that it has better electrical performance than the non-embedded modules.

• Proceedings of the Korean Society of Laser Processing Conference
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• 1998.11a
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• pp.0-0
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• 1998

-Part I- As market needs become more various, the production of smaller quantities of a wider variety of products becomes increasingly important. In addition, in order to meet demands for more efficient production, long-term unmanned factory operation is prevailing at a remarkable pace. Within this context, laser machines are gaining increasing popularity for use in applications such as cutting and welding metallic and ceramic materials. FANUC supplies four models of $CO_2$ laser oscillators with laser power ranging from 1.5㎾ to 6㎾ on an OEM basis to machine tool builders. However, FANUC has been requested to produce laser oscillators that allow more compact and lower-cost laser machines to be built. To meet such demands, FANUC has developed six models of Slab type YAG laser oscillators with output power ranging from 150W to 2㎾. These oscillators are designed mainly fur cutting and welding sheet metals. The oscillator has an exceptionally superior laser beam quality compared to conventional YAG laser oscillators, thus providing significantly improved machining capability. In addition, the laser beam of the oscillator can be efficiently transmitted through quartz optical fibers, enabling laser machines to be simplified and made more compact. This paper introduces the features of FANUC’s developed Slab type YAG laser oscillators and their applications. - Part II - All-solid-state lasers employing laser diodes (LD) as a source of pumping solid-state laser feature high efficiency, compactness, and high reliability. Thus, they are expected to provide a new generation of processing tools in various fields, especially in automobile and aircraft industries where great hopes are being placed on laser welding technology for steel plates and aluminum materials for which a significant growth in demand is expected. Also, in power plants, it is hoped that reliability and safety will be improved by using the laser welding technology. As in the above, the advent of high-power all-solid-state lasers may not only bring a great technological innovation to existing industry, but also create new industry. This is the background for this project, which has set its sights on the development of high-power, all-solid-state lasers with an average output of over 10㎾, an oscillation efficiency of over 20%, and a laser head volume of below 0.05㎥. FANUC Ltd. is responsible for the research and development of slab type lasers, and TOSHIBA Corp. far rod type lasers. By pumping slab type Nd: YAG crystal and by using quasi-continuous wave (QCW) type LD stacks, FANUC has already obtained an average output power of 1.7㎾, an optical conversion efficiency of 42%, and an electro-optical conversion efficiency of 16%. These conversion efficiencies are the best results the world has ever seen in the field of high-power all-solid-state lasers. TOSHIBA Corp. has also obtained an output power of 1.2㎾, an optical conversion efficiency of 30％, and an electro-optical conversion efficiency of 12%, by pumping the rod type Nd: YAG crystal by continuous wave (CW) type LD stacks. The laser power achieved by TOSHIBA Corp. is also a new world record in the field of rod type all-solid-state lasers. This report provides details of the above results and some information on future development plans.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.239-240
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• 2008

As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.