• 한국측량학회지
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• 제32권3호
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• pp.233-244
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• 2014

Precise Point Positioning (PPP) is an increasingly recognized precisely the GPS/GNSS positioning technique. In order to improve the accuracy of PPP, the error sources in PPP measurements should be reduced as much as possible and the ambiguities should be correctly resolved. The correct ambiguity resolution requires a careful control of residual errors that are normally categorized into random and systematic errors. To understand effects from two categorized errors on the PPP ambiguity resolution, those two GPS datasets are simulated by generating in locations in South Korea (denoted as SUWN) and Hong Kong (PolyU). Both simulation cases are studied for each dataset; the first case is that all the satellites are affected by systematic and random errors, and the second case is that only a few satellites are affected. In the first case with random errors only, when the magnitude of random errors is increased, L1 ambiguities have a much higher chance to be incorrectly fixed. However, the size of ambiguity error is not exactly proportional to the magnitude of random error. Satellite geometry has more impacts on the L1 ambiguity resolution than the magnitude of random errors. In the first case when all the satellites have both random and systematic errors, the accuracy of fixed ambiguities is considerably affected by the systematic error. A pseudorange systematic error of 5 cm is the much more detrimental to ambiguity resolutions than carrier phase systematic error of 2 mm. In the $2^{nd}$ case when only a portion of satellites have systematic and random errors, the L1 ambiguity resolution in PPP can be still corrected. The number of allowable satellites varies from stations to stations, depending on the geometry of satellites. Through extensive simulation tests under different schemes, this paper sheds light on how the PPP ambiguity resolution (more precisely L1 ambiguity resolution) is affected by the characteristics of the residual errors in PPP observations. The numerical examples recall the PPP data analysts that how accurate the error correction models must achieve in order to get all the ambiguities resolved correctly.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.77-77
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• 2000

Titanium oxide (TiO2) thin films have valuable properties such as a high refractive index, excellent transmittance in the visible and near-IR frequency, and high chemical stability. Therefore it is extensively used in anti-reflection coating, sensor, and photocatalysis as electrical and optical applications. Specially, TiO2 have a high dielectric constant of 180 along the c axis and 90 along the a axis, so it is highlighted in fabricating dielectric capacitors in micro electronic devices. A variety of methods have been used to produce patterned self-assembled monolayers (SAMs), including microcontact printing ($\mu$CP), UV-photolithotgraphy, e-beam lithography, scanned-probe based micro-machining, and atom-lithography. Above all, thin film fabrication on $\mu$CP modified surface is a potentially low-cost, high-throughput method, because it does not require expensive photolithographic equipment, and it produce micrometer scale patterns in thin film materials. The patterned SAMs were used as thin resists, to transfer patterns onto thin films either by chemical etching or by selective deposition. In this study, we deposited TiO2 thin films on Si (1000 substrateds using titanium (IV) isopropoxide ([Ti(O(C3H7)4)] ; TIP as a single molecular precursor at deposition temperature in the range of 300-$700^{\circ}C$ without any carrier and bubbler gas. Crack-free, highly oriented TiO2 polycrystalline thin films with anatase phase and stoichimetric ratio of Ti and O were successfully deposited on Si(100) at temperature as low as 50$0^{\circ}C$. XRD and TED data showed that below 50$0^{\circ}C$, the TiO2 thin films were dominantly grown on Si(100) surfaces in the [211] direction, whereas with increasing the deposition temperature to $700^{\circ}C$, the main films growth direction was changed to be [200]. Two distinct growth behaviors were observed from the Arhenius plots. In addition to deposition of THe TiO2 thin films on Si(100) substrates, patterning of TiO2 thin films was also performed at grown temperature in the range of 300-50$0^{\circ}C$ by MOCVD onto the Si(100) substrates of which surface was modified by organic thin film template. The organic thin film of SAm is obtained by the $\mu$CP method. Alpha-step profile and optical microscope images showed that the boundaries between SAMs areas and selectively deposited TiO2 thin film areas are very definite and sharp. Capacitance - Voltage measurements made on TiO2 films gave a dielectric constant of 29, suggesting a possibility of electronic material applications.

• 대한토목학회논문집
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• 제29권1D호
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• pp.135-143
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• 2009

GPS 반송파를 사용하는 GPS/INS 통합 측위 기술은 서로가 가지는 기술적 한계를 상호 극복하여 그 성능을 최대화 할 수 있어 측량과 항법의 다양한 분야에 활용되고 있다. 그러나 GPS/INS 통합 측위을 통하여 수 센티미터의 정확도를 확보하기 위해서는 기준국과 이동국 수신기 사이의 간격이 10~20Km 이내로 제한되어야 하는 단점을 가지고 있으며 이는 두 시스템 관측데이터를 통합 처리하더라도 그 정확도는 여전히 GPS 위성궤도 오차, 전리층 영향 그리고 대류권 지연과 같은 기선장에 따른 오차의 영향을 받기 때문이다. 이것은 3대 이상의 기준국 관측데이터를 사용하여 기선장에 따른 오차 보정량을 추정하여 이동국 관측데이터에서 그 영향을 최소화하여 극복 할 수 있다. 따라서 본 논문에서는 다중의 기준국 관측데이터를 사용하여 기선장에 따른 오차 보정량 결정을 위한 기준국 반송파 미지정수 결정, 칼만필터에 의한 기선장에 따른 오차 추정 그리고 기준국과 이동국의 기하관계에 의한 오차 보간을 통한 보정량 산출 알고리즘 제안하고 실제 관측데이터 처리를 통해 그 성능을 평가 하였다.