• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.382.1-382.1
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• 2014

Graphene field-effect transistors (GFET) is one of candidates for future high speed electronic devices since graphene has unique electronic properties such as high Fermi velocity (vf=10^6 m/s) and carrier mobility ($15,000cm^2/V{\cdot}s$) [1]. Although the contact property between graphene and metals is a crucial element to design high performance electronic devices, it has not been clearly identified. Therefore, we need to understand characteristics of graphene/metal contact in the GFET. Recently, it is theoretically known that graphene on metal can be doped by presence of interface dipole layer induced by charge transfer [2]. It notes that doping type of graphene under metal is determined by difference of work function between graphene and metal. In this study, we present the GFET fabricated by contact metals having high work function (Pt, Ni) for p-doping and low work function (Ta, Cr) for n-doping. The results show that asymmetric conductance depends on work function of metal because the interfacial dipole is locally formed between metal electrodes and graphene. It induces p-n-p or n-p-n junction in the channel of the GFET when gate bias is applied. In addition, we confirm that charge transfer regions are differently affected by gate electric field along gate length.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1994년도 추계학술대회 논문집
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• pp.472-477
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• 1994

The lockup clutch is embeded on torque converter of automatic transmission to prevent the efficiency deterioration of torque converter in high speed. For improving fuel consumption rate, it is desirable to engage the lockup clutch earlier. But, it results in degrading shift quality, due to the transient torque. The transient clutch pressure which affects the shifting quality, should be controlled properly. In this study, to solve the problem, it is analysed the hydraulic circuit of lockup system including line pressure regulating circuit, established the nonlinear model, and designed the PID controller. The line pressure is supplied to the lockup clutch through the lockup control valve by switching the lockup solenoid valve on. In order to control the transient pressure actively, it is needed to control the lockup solenoid valve by closed loop control. The lockup solenoid valve is 2-way on-off valve, and is adequate for PWM control. To reduce the pressure chattering, the carrier frequency is increased. Target pressure profile is computed from optimized velocity difference profile throuth dynamic equation of vehicle system.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 추계학술대회 초록집
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• pp.97.1-97.1
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• 2011

Dimethyl ether (DME) is an attractive fuel as a hydrogen carrier for mobile PEMFC applications. However, its reforming technologies are rarely studied especially by using autothermal reforming (ATR) method. This work explored the impact of operating conditions to the performance of DME ATR. Temperature, Steam to carbon ratio(SCR), Oxygen to carbon ratio(OCR) and Gas hourly space velocity(GHSV) were considered as the operating conditions. As results, conversion efficiency was increased as the temperature increased, but saturated around $700^{\circ}C$. There was no significant effect of SCR on conversion efficiency, but high SCR led reactions in endothermic manner. High OCR substantially suppressed conversion efficiency, but it helped to sustain the temperature by stimulating exothermic reactions. Conversion efficiency was decreased as GHSV increased. The optimized operating conditions was suggested: $700^{\circ}C$, SCR of 1.5, OCR of 0.45 and GHSV below 15000/h and conversion efficiency was ~85% at the conditions.

• 한국군사과학기술학회지
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• 제23권3호
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• pp.213-220
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• 2020

This paper proposes a method on the performance analysis of pulse repetition frequency jitter compensation for generating Doppler profile. Exact phase compensation of each pulse is required to obtain Doppler profiles under pulse repetition frequency jitter. Three parameters such as velocity, pulse repetition frequency, and carrier frequency are examined to cause errors when conducting the pulse repetition frequency jitter compensation, then assuming well-focused Doppler profiles reflect well-conducted pulse repetition frequency jitter compensation, the proposed method in this paper utilizes the contrast to measure how well Doppler profile is generated. These are validated by electromagnetic computation data and computer simulation. Then, it is concluded which parameter is important on the performance analysis of pulse repetition frequency jitter compensation by using the contrast.

• International Journal of Naval Architecture and Ocean Engineering
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• 제4권3호
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• pp.322-334
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• 2012

This paper shows the numerical and experimental results about the hydrodynamic characteristics of X-Twisted rudders having continuous twist of the leading edge along the span. All the results were compared with those of the semi-balanced rudder. Calculation through the Reynolds-Averaged Navier-Stokes Equation (RANSE) code with propeller sliding meshes shows large inflow angle and fast inflow velocity in the vicinity of ${\pm}0.7$ R from the shaft center, so it may cause cavitation. Also, X-Twisted rudder has relatively small inflow angles along the rudder span compared with semi-balanced rudder. For the performance validation, rudders for two large container carriers were designed and tested. Cavitation tests at the medium sized cavitation tunnel with respect to the rudder types and twisted angles showed the effectiveness of twist on cavitation and the tendency according to the twist. And the resistance, self-propulsion and manoeuvring tests were also carried out at the towing tank. As a result, in the case of X-Twisted rudder, ship speed was improved with good manoeuvring performance. Especially, it was found out that manoeuvring performance between port and starboard was well balanced compared with semi-balanced rudders.

• 한국항해학회지
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• 제6권2호
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• pp.13-33
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• 1982

The NAVSTAR/GPS is a satellite-based navigation system that will provide extremely accurate three-dimensional position and velocity information to users anywhere on or near the earth. This system has been studied primarly for military use and thus the results of studies are seldom obtainable for civilian use up to date. Expecting this system to be opened to civilian use in the future, this paper aims to the collection of basic data of the PN phase modulated communication system adopted in the GPS system by computer simulation. The results of studies are as follows; 1) The PN phase modulation of the speed of 106b/s can be simulated by Fourier summation, the spectrum region which can be restricted is in the region of 0.5-1.5 MHz and spectrum number required is over than 270. 2) By computer simulation, it is verified that optimum r.f filter bandwidth is about 0.3 MHz for the case of $10^6$b/s PN codes phase modulated in 1.575GHz carrier. 3) In case that PN rate to data rate is between 10 and 100, the allowable minimum SNR to demodulate data signal correctly by optimum LPF is about 0.3. It is also verified that the larger the frequency ratio of PN code to the data code, the lower the allowable minimum SNR required.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.1247-1249
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• 1993

In this paper, NUDFET(NonUniformly Doped Field Effect Transistor) is presented as an alternative which offers the possibility of reducing the power necessary to operate switching circuits without a substantial loss in speed. The purpose of this NUDFET is to modify the electric field profile in order to cause carrier velocity saturation to occur at a lower voltage than it would occur in the uniformly doped device of the same channel length. The more MESFET and NUDFET circuits are realized, the more accurate model ins the performance of these devices become required. Analytic model ins was replaced by numerical analysis because of the complexity of device configuration. In this paper, FEM is selected because of simpler local mesh refinement and smaller computer memory than FDM. For accurate analysis, this paper has applied the Scharfetter-Gummel(S-G) Scheme and seven-point Gaussian Quadrature rule to assembly of the finite-element stiffness matrices and right-hand side vector of the semiconductor equations.

• International Journal of Naval Architecture and Ocean Engineering
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• 제4권2호
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• pp.83-95
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• 2012

In the present study, the structural response of breakwaters installed on container carriers against green water impact loads was numerically investigated on the basis of the fluid-structure interaction analysis. A series of numerical studies is carried out to induce breakwater collapse under such conditions, whereby a widely accepted fluid-structure interaction analysis technique is adopted to realistically consider the phenomenon of green water impact loads. In addition, the structural behaviour of these breakwaters under green water impact loads is investigated simultaneously throughout the transient analysis. A verification study of the numerical results is performed using data from actual collapse incidents of breakwaters on container carriers. On the basis of the results of a series of numerical analyses, the pressure distribution of green water was accurately predicted with respect to wave mass and velocity. It is expected that the proposed analytical methodology and predicted pressure distribution could be used as a practical guideline for the design of breakwaters on container carriers.

• 전자통신동향분석
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• 제34권5호
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• pp.71-80
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• 2019

Gallium nitride (GaN) can be used in high-voltage, high-power-density/-power, and high-speed devices owing to its characteristics of wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. In this study, we investigate the technology trends for X-/Ku-band GaN RF power devices and MMIC power amplifiers, focusing on gate-length scaling, channel structure, and power density for GaN RF power devices and output power level and output power density for GaN MMIC power amplifiers. Additionally, we review the technology trends in gallium arsenide (GaAs) RF power devices and MMIC power amplifiers and analyze the technology trends in RF power devices and MMIC power amplifiers based on both GaAs and GaN. Furthermore, we discuss the current direction of national research by examining the national and international technology trends with respect to X-/Ku-band power devices and MMIC power amplifiers.

• 전자통신동향분석
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• 제37권5호
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• pp.11-21
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• 2022

GaN (Gallium-Nitride) is a promising candidate material in various radio frequency applications due to its inherent properties including wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. Notably, AlGaN/GaN heterostructure field effect transistor exhibits high operating voltage and high power-density/power at high frequency. In next-generation radar systems, GaN power transistors and monolithic microwave integrated circuits (MMICs) are significant components of transmitting and receiving modules. In this paper, we introduce technological trends for C-/X-/Ku-band GaN MMICs including power amplifiers, low noise amplifiers and switch MMICs, focusing on the status of GaN MMIC fabrication technology and GaN foundry service. Additionally, we review the research for the localization of C-/X-/Ku-band GaN MMICs using in-house GaN transistor and MMIC fabrication technology. We also discuss the results of C-/X-/Ku-band GaN MMICs developed at Defense Materials and Components Convergence Research Department in ETRI.