• Transactions of the Korean Society of Mechanical Engineers B
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• v.25 no.9
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• pp.1175-1182
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• 2001

Chemical compositions of polydisperse SiO$_2$/TiO$_2$multicomponent aggregates were measured for different heights from the burner surface and different mobility diameters of aggregates. SiO$_2$/TiO$_2$multicomponent particles were generated in a hydrogen/oxygen coflow diffusion flame from two sets of precursors: TTIP(titanium tetraisopropoxide), TEOS(tetraethylorthosilicate). To maintain 1:1 mole ratio of TTIP:TEOS vapor, flow rate of carrier gas $N_2$was fixed at 0.6lpm for TTIP, at 0.1lpm for TEOS. In-situ sampling probe was used to supply particles into DMA(differential mobility analyzer) which was calibrated with using commercial DMA(TSI, model 3071A) and classifying monodisperse multicomponent particles. Classified monodisperse particles were collected with electrophoretic collector. The distributions of composition from particles to particle were determined using EDS(energy dispersive spectrometry) coupled with TEM(transmission electron microscope). The chemical(atomic) compositions of classified monodisperse particle were obtained for different heights; z=40mm, 60mm, 80mm. The results suggested that the chemical(atomic) composition of SiO$_2$decreased with the height from burner surface and the composition of SiO$_2$and TiO$_2$approached to the value of 1 to 1 fat downstream. It is also found that the composition of SiO$_2$decreases as the mobility diameter of aggregate increases.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.139-139
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• 2010

Ionic Transition Metal Complex based (iTMC) Light-emitting electrochemical cells (LEECs) have been drawn attention for cheap and easy-to-fabricate light-emitting device. LEEC is one of the promising candidate for next generation display and solid-state lighting applications which can cover the defects of current commercial OLEDs like complicated fabrication process and strong work-function dependent sturucture. We have investigated the performance characteristics of LEECs based on poly (3, 4-ethylenedioxythiophene):poly (styrene sulfonate) (PEDOT:PSS)-incorporated transition metal complex, which is tris(2, 2'-bipyridyl)ruthenium(II) hexafluorophosphate in this study. There are advantages using conductive polymer-incorporated luminous layer to prevent light disturbance and absorbance while light-emitting process between light-emitting layer and transparent electrode like ITO. The devices were fabricated as sandwiched structure and light-emitting layer was deposited approximately 40nm thickness by spin coating and aluminum electrode was deposited using thermal evaporation process under the vacuum condition (10-3Pa). Current density and light intensity were measured using optical spectrometer, and surface morphology changes of the luminous layer were observed using XRD and AFM varying contents of PEDOT:PSS in the Ruthenium(II) complex solution. To observe enhanced ionic conductivity of PEDOT:PSS and luminous layer, space-charge-limited-currents model was introduced and it showed that the performances and stability of LEECs were improved. Main discussions are the followings. First, relationship between film thickness and performance characteristics of device was considered. Secondly, light-emitting behavior when PEDOT:PSS layer on the ITO, as a buffer, was introduced to iTMC LEECs. Finally, electrical properties including carrier mobility, current density-voltage, light intensity-voltage, response time and turn-on voltages were investigated.

• Korean Journal of Materials Research
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• v.9 no.2
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• pp.155-162
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• 1999

Zirconia thin films of uniform structure were fabricated by plasma-enhanced metal-organic chemical vapor deposition. Deposition conditions such as substrate temperature were observed to have much influence on the formation of zirconia films, therefore the mechanism of decomposition of $Zr[TMHD]_4$precursor and film growth were examined by XRD, FT-IR etc., as well as the determination of the optimal deposition condition. From temperature dependence on zirconia, below the deposition temperature of 523K, the amorphous zirconia was formed while the crystalline of zirconia with preferred orientation of cubic (200) was obtained above the temperature. Deposits at low temperatures were investigated by FT-IR and the absorption band of films revealed that the zirconia thin film was in amorphous structure and has the same organic band as that of Zr precursor. In case of high temperature, it was found that Zr precursor was completely decomposed and crystalline zirconia was obtained. In addition, at 623K the higher RF power yielded the increased crystallinity of zirconia implying an increase in decomposition rate of precursor. However, it seems that RF power has nothing with the zirconia deposition process at 773K. It was found that the proper bubbler temperature of TEX>$Zr[TMHD]<_4$ precursor is needed along with high flow rate of carrier gas. Through AFM analysis it was determined that the growth mechanism of the zirconia thin film showed island model.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.282-285
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• 2003

Single crystal $CuAlSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $410\;^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$ source at $680\;^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuAlSe_2$ thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}\;and\;295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68\;{\times}\;10^{-4}eV/K)T^2/(T\;+\;155\;K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_2$ have been estimated to be 0.2026 eV and 0.2165 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the $\Delta$so definitely exists in the ${\Gamma}_5$ states of the valence band of the $CuAlSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.74-75
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• 2005

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_2O_3$) substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence. The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}cm^{-3}$ and $299cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 3.3973 eV - ($2.69{\times}10^{-4}$ eV/K)$T_2$/(T + 463 K). The crystal field and the spin-orbit splitting energies for the valence band of the ZnO have been estimated to be 0.0041 eV and 0.0399 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the $\triangle$so definitely exists in the $\ulcorner_6$ states of the valence band of the ZnO. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• Review of Korean Society for Internet Information
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• v.14 no.4
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• pp.63-76
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• 2013

This short report introduces the general background why Brazil conference is being prepared and what topics would be undertaken and what goals are being taken into account. It overviews what differences from traditional telecommunication governance, internet governance has had in its historical development and how such differences had been formed from its technological differences and the regulatory policy shift from common carrier regulation to privatization. Moreover, the fact that open, voluntary, bottom-up, diverse stakeholder's participation had evolved throughout the historical development of the internet, had established the present multistakeholder governance model from technological standardization to addressing scheme policies. ICANN, which has governed internet addressing schemes since the earlier 2000s, had developed address policies including IANA function from Jon Postel and technical community's legacy management system into contract based formation between ICANN and gTLD, ccTLD registries. And it made dispute resolution policies responding to trademark disputes and resolved gTLD monopoly issue by introducing new TLD generation and the separation of registry and registar. However, there had been challenges on the legitimacy of ICANN due to its dependency on the Federal Government of the U.S. particularly in its oversight role over ICANN and IANA contract. WSIS raised up internet governance issues including addressing governance, and set up IGF as a discussion platform for multistakeholders to discuss and share all views on other internet related public policies. IGF's loose and non-binding discussion once frustrated governments and other stakeholders, but more focused discussion and visible outcomes have consolidated its unique role for internet governance discourses. Particularly, IGF addressed many emerging internet related issues like cybersecurity, privacy, net neuratlity, development related issues. WTPF of 2013, after WCIT debate on whether traditional telecommunication regulation could be applied to internet infrastructure, suggested other governance issues such as the transition to ipv6, IXP coordination etc. How to make sure the legitimacy of internet addressing governance and how and where other internet related public policies could be undertaken are fundamental tasks for internet governance. Brazil conference, which has been motivated by the breakdown of trust in internet governance from NSA mass surveillance revealed by Snowden, faces these questions and try to make consensus on principles, institutions and roadmap for internet governance in multistakeholder participation way.

• Applied Chemistry for Engineering
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• v.1 no.2
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• pp.140-146
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• 1990

Polydimethylsiloxane(PDMS) containing [N, N'-bis (3- (salicylidene amino) propyl) amine Co(II)] (Co(saldpt)) as a fixed oxygen carrier was synthesized. UV-visible spectra of the membrane demonstrated that Co(saldpt) binded molecular oxygen specificaaly and reversibly. From time lag method experiment, it was found that both oxygen permeability and diffusibity increase with decreasing upstream pressure, while solubility maintain nearly constant. The maximum oxygen permeability and oxygen selectivity over nitrogen obtained was 18.6 barrer and 4, respectively, at 25 mmHg and $40^{\circ}C$ from the the PDMS membrane containing 1 wt% of Co(saldpt). Facilitation behavior was explained in terms of the dual sorption model.

• Journal of Sensor Science and Technology
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• v.15 no.6
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• pp.397-405
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• 2006

Single crystal $AgGaSe_{2}$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_{2}$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_{2}$ thin films measured with Hall effect by van der Pauw method are $4.05{\times}10^{16}/cm^{3}$, $139cm^{2}/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $AgGaSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$=1.9501 eV-($8.79{\times}10^{-4}{\;}eV/K)T^{2}$/(T+250 K). The crystal field and the spin-orbit splitting energies for the valence band of the $AgGaSe_{2}$ have been estimated to be 0.3132 eV and 0.3725 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}So$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $AgGaSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-$, and $C_{1}-$exciton peaks for n=1.

• Journal of Sensor Science and Technology
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• v.14 no.3
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• pp.160-168
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• 2005

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_{2}O_{3}$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_{2}O_{3}$) substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence. The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}1016cm^{-3}$ and $299cm^{2}/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$=3.3973 eV-($2.69{\times}10^{-4}$ eV/K)$T^{2}$/(T+463K). The crystal field and the spin-orbit splitting energies for the valence band of the ZnO have been estimated to be 0.0041 eV and 0.0399 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{6}$ states of the valence band of the ZnO. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-$, and $C_{1}-$exciton peaks for n = 1.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.10 no.2
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• pp.196-206
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• 1999

In this paper, we have estimated the interference effects between the NGSO/MSS system and the fixed-service M/W system for sharing the NGSO/MSS system into the frequency band operated by the existing M/W system. Between above two systems, the interference effects must be analyzed in the following three points. That is, PFD(Power Flux Density) level must be obtained in the case of the interference from NGSO satellites into M/W stations, C/I(Carrier-to-Interference Ratio) and the coordination contour in the case of the interference between NGSO/MSS feeder link and a M/W station, and the interference power level and coordination contour in the case of the interference between NGSO/MSS service link(handsets) and M/W stations. Therefore, in order to obtain above three criteria, we have developed the analytical model, introduced the related equations and estimated the system performance by means of the simulation and the theoretial analysis. It is expected that the results will be utilized in setting the criterion for sharing between the NGSO/MSS system and the M/W station.