• 제목/요약/키워드: carrier injection

검색결과 245건 처리시간 0.03초

유기 능동 소자 제작을 위한 신소재 연구 (A Study on New Materials for Organic Active Devices)

  • 이성재;임성택;신동명;최종선;이후성;김영관;손병청
    • 한국응용과학기술학회지
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    • 제17권3호
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    • pp.174-177
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    • 2000
  • The effect of a-sexithiophene(${\alpha}-6T$) layers on the light emitting diode (LED) were studied. The ${\alpha}-6T$ was used for a buffer layer in electroluminescent (EL) devices. Enhanced carrier (hole) injection and improved emission efficiency were observed. Carrier injection characteristics were investigated as a function of ${\alpha}-6T$ later thickness. The efficiency of the electroluminescence was proportional to the thickness of ${\alpha}-6T$ layer. The highest efficiency was observed 600A of ${\alpha}-6T$ later, which was about 1.5 times higher than that of device without ${\alpha}-6T$ later. The device with a-6T showed an operation voltage lowered by 2V. The ${\alpha}-6T$ layer can substitute hole blocking layer, and control charge injection properties.

산화막의 질화 조건에 따른 트랩 파라미터에 관한 연구 (Study on the Trap Parameters according to the Nitridation Conditions of the Oxide Films)

  • 윤운하;강성준;정양희
    • 한국전자통신학회논문지
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    • 제11권5호
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    • pp.473-478
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    • 2016
  • 본 논문은 RTP법으로 산화막을 질화시킨 질화산화막으로 MIS 커패시터를 제작하여 avalanche 주입에 따른 캐리어 트랩 특성을 조사하였다. avalanche 주입에 의한 flatband 전압 변화는 두 번의 turn-around가 관찰되었는데 이는 처음 산화막에서 전자 트래핑이 있어나고, 전하 주입에 따라 홀 트래핑에 의한 turn-around 후 다시 전자 트래핑이 일어나는 것을 관찰하였다. 질화 산화막의 캐리어 트랩 파라미터를 결정하기 위하여 실험 결과를 기초로 종류가 다른 여러 트랩을 갖는 계에 대한 캐리어 트래핑을 비교한 결과 실험값과 일치함을 확인하였다.

Synchronous Carrier-based Pulse Width Modulation Switching Method for Vienna Rectifier

  • Park, Jin-Hyuk;Yang, SongHee;Lee, Kyo-Beum
    • Journal of Power Electronics
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    • 제18권2호
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    • pp.604-614
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    • 2018
  • This paper proposes a synchronous switching technique for a Vienna rectifier that uses carrier-based pulse width modulation (CB-PWM). A three-phase Vienna rectifier, similar to a three-level T-type converter with three back-to-back switches, is used as a PWM rectifier. Conventional CB-PWM requires six independent gate signals to operate back-to-back switches. When internal switches are operated synchronously, only three independent gate signals are required, which simplifies the construction of gate driver circuits. However, with this method, total harmonic distortion of the input current is higher than that with conventional CB-PWM switching. A reactive current injection technique is proposed to improve current distortion. The performance of the proposed synchronous switching method and the effectiveness of the reactive current injection technique are verified using simulations and experiments performed with a set of Vienna rectifiers rated at 5 kW.

경제적인 자동화 FIA 장치를 이용한 진탕플라스크 배양액의 미생물 증식도의 자동측정 (Automatic Measurement of Microbial Growth in Snake-Flask Culture using an Economic and Automated flow injection Analysis Apparatus)

  • 이형춘
    • KSBB Journal
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    • 제19권3호
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    • pp.241-244
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    • 2004
  • 진탕플라스크 배양액의 균 증식도를 자동측정하기 위하여 자동화 FIA장치를 경제적으로 제작하였으며, 이를 이용하여 대장균을 Nutrient broth 배지에 접종하여 배양하면서 그 증식도를 자동측정하였다. 멸균 NB를 이송용액으로 하고 10분 간격으로 자동측정하였을 때 큰 오차 없이 증식양상을 세밀하게 측정할 수 있었다. 증류수를 이송용액으로 사용한 경우에는 NB를 이송용액으로 사용한 경우에 비하여 측정오차가 더 컸으며, 특히 배양후반부에서의 오차가 크게 나타났다.

장시간 스트레스 조건에서 submicron MOSFET의 열전자 트래핑에 의한 노화현상에 대한 연구 (A study on the degradation by the hot carrier trapping of the submicron MOSFET with long stress condition)

  • 홍순석
    • E2M - 전기 전자와 첨단 소재
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    • 제8권3호
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    • pp.357-361
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    • 1995
  • An experiment on characteristics of nMOSFET's in the long stress condition with the maximum of the substrate current has been carried out in order to study on the degradation due to the hot-carrier effect. Based on the measured result of the threshold voltage, the damage is mostly due to the hole injection into the oxide. After long stress, it was shown that the drain current increased at low gate voltages and hence decreased at high gate voltages.

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Tungsten oxide interlayer for hole injection in inverted organic light-emitting devices

  • 김윤학;박순미;권순남;김정원
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.380-380
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    • 2010
  • Currently, organic light-emitting diodes (OLEDs) have been proven of their readiness for commercialization in terms of lifetime and efficiency. In accordance with emerging new technologies, enhancement of light efficiency and extension of application fields are required. Particularly inverted structures, in which electron injection occurs at bottom and hole injection on top, show crucial advantages due to their easy integration with Si-based driving circuits for active matrix OLED as well as large open area for brighter illumination. In order to get better performance and process reliability, usually a proper buffer layer for carrier injection is needed. In inverted top emission OLED, the buffer layer should protect underlying organic materials against destructive particles during the electrode deposition, in addition to increasing their efficiency by reducing carrier injection barrier. For hole injection layers, there are several requirements for the buffer layer, such as high transparency, high work function, and reasonable electrical conductivity. As a buffer material, a few kinds of transition metal oxides for inverted OLED applications have been successfully utilized aiming at efficient hole injection properties. Among them, we chose 2 nm of $WO_3$ between NPB [N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] and Au (or Al) films. The interfacial energy-level alignment and chemical reaction as a function of film coverage have been measured by using in-situ ultraviolet and X-ray photoelectron spectroscopy. It turned out that the $WO_3$ interlayer substantially reduces the hole injection barrier irrespective of the kind of electrode metals. It also avoids direct chemical interaction between NPB and metal atoms. This observation clearly validates the use of $WO_3$ interlayer as hole injection for inverted OLED applications.

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Theileria sergenti 불현성감염우(不顯性感染牛)에 대(對)한 Dexamethasone의 영향(影響)에 관(關)한 연구(硏究) (Influence of Dexamethasone on the Recrudescence of Theileria sergenti in Carrier Calves)

  • 손제영;고기환
    • 대한수의학회지
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    • 제27권1호
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    • pp.93-99
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    • 1987
  • A study was conducted to observe the effects of dexamethasone sodium 21 phosphate injection in different amounts, intervals and times on the fluctuation of the parasitized erythrocytes in the peripheral blood of the T. sergenti carrier calves. A total of 31 calves including 15 Holstein and 16 Korean native male calves aged 6-12 months (125-300kg) was used. Results observed were as follows. 1. The calves injected 0.2mg/kg body weight two and three times in 48 hour intervals and 5 times in 24 hour intervals observed that 2 out of 2 heads, 3 out of 6 heads, and 4 out of 5 heads, respectively were substantially increased parasitized erythrocytes in the blood for 3-11 days after the first injection and continued to 2-10 days. 2. However, the calves injected once with 0.1mg/kg body weight and all control calves showed no visible change of the parasitized erythrocytes in the blood during the experimental period. 3. The animals injected over 2 times with 0.2mg/kg body weight tended to be decreased the number of erythrocytes, hemoglobin concentration and PCV for 2-3 days after first injection and continued about one week. 4. All animals injected the dexamethasone were observed the neutrophilic leukocytosis, eosinopenea and lymphopenea until 48 hours after injection.

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고분자 발광다이오드에서 공액고분자 전해질 전자수송층에 의해 변화되는 전자주입 메카니즘 (Electron Injection Mechanisms Varied by Conjugated Polyelectrolyte Electron Transporting Layers in Polymer Light-Emitting Diodes)

  • 엄성수;박주현
    • 폴리머
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    • 제36권4호
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    • pp.519-524
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    • 2012
  • 공액고분자 전해질 전자수송층을 이용하는 고분자 발광소자의 정전용량을 측정하는 것은 전류밀도-전압-발광특성을 측정하는 방법과 더불어 전자수송층으로서 공액고분자 전해질의 기능을 이해하기 위한 소자물리 연구에서 중요한 정보를 제공해준다. 본 연구에서는 고분자 전해질의 반대 이온의 종류에 따라 저주파수 영역에서 정전용량의 거동이 변화하는 것으로부터 전하 주입의 메카니즘에서 차이점이 있음을 분석하였다. 정전용량 모델을 이용한 분석은 전자주입 메카니즘이 음극/전자수송층/발광층 사이의 계면에서 발생하는 쌍극자 배열 또는 전하수송체의 축적에 의한 것임을 나타내었다.

SCH 양자우물 레이저 다이오드에 대한 L-I-V 특성의 해석적도출에 관한 연구 (A Study on the analytical derivation of the L-I-V characteristics for a SCH QW Laser Diode)

  • 박륭식;방성만;심재훈;서정하
    • 대한전자공학회논문지SD
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    • 제39권3호
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    • pp.9-19
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    • 2002
  • 본 논문에서는 thermionic emission 모델을 이용하여 SCH 양자우물 레이저 다이오드에 대한 L-I-V특성을 해석적으로 도출하였다. SCH의 bulk 캐리어와 양자우물 속박 캐리어의 관계를 도출하였고, 주입된 전류를 각 영역에서의 캐리어 재결합을 고려한 전류 연속 방정식을 만족하도록 하였다. 또한, high level injection과 전하 중성 조건하에 ambipolar 확산 방정식을 이용하여 캐리어 분포를 고찰하였다. 위 해석적인 모델을 이용하여 계산한 결과, 클래딩 영역의 전위장벽 변화가 전류 전압 특성 변화의 주요 원인으로 나타났다. 또한 thermionic emission에 의한 주입 전류의 forward flux 증가가 캐리어 주입을 증가시키고, 레이저 다이오드의 직렬 저항을 감소시키는 것을 보였다.

일함수 변화를 통한 그래핀 전극의 배리어 튜닝하기 (Study of the Carrier Injection Barrier by Tuning Graphene Electrode Work Function for Organic Light Emitting Diodes OLED)

  • 김지훈;맹민재;홍종암;황주현;최홍규;문제현;이정익;정대율;최성율;박용섭
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.111.2-111.2
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    • 2015
  • Typical electrodes (metal or indium tin oxide (ITO)), which were used in conventional organic light emitting devices (OLEDs) structure, have transparency and conductivity, but, it is not suitable as the electrode of the flexible OLEDs (f-OLEDs) due to its brittle property. Although Graphene is the most well-known alternative material for conventional electrode because of present electrode properties as well as flexibility, its carrier injection barrier is comparatively high to use as electrode. In this work, we performed plasma treatment on the graphene surface and alkali metal doping in the organic materials to study for its possibility as anode and cathode, respectively. By using Ultraviolet Photoemission Spectroscopy (UPS), we investigated the interfaces of modified graphene. The plasma treatment is generated by various gas types such as O2 and Ar, to increase the work function of the graphene film. Also, for co-deposition of organic film to do alkali metal doping, we used three different organic materials which are BMPYPB (1,3-Bis(3,5-di-pyrid-3-yl-phenyl)benzene), TMPYPB (1,3,5-Tri[(3-pyridyl)-phen-3-yl]benzene), and 3TPYMB (Tris(2,4,6-trimethyl-3-(pyridin-3-yl)phenyl)borane)). They are well known for ETL materials in OLEDs. From these results, we found that graphene work function can be tuned to overcome the weakness of graphene induced carrier injection barrier, when the interface was treated with plasma (alkali metal) through the value of hole (electron) injection barrier is reduced about 1 eV.

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