• Title/Summary/Keyword: carbon nanotubes$H_2$

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Selective growth of carbon notubes by patterning nickel catalyst metal (패터닝된 Ni 촉매 금속 위에서의 탄소나노튜브 성장)

  • Bang Y.Y.;Chang W.S.;Han C.S.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2006.05a
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    • pp.473-474
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    • 2006
  • Aligned carbon nanotubes(CNTs) array were synthesized using direct current plasma-enhanced chemical vapor deposition. The nickel microgrids catalyzed the growth of carbon nanotubes which take on the area of the nickel microgrids. Selective growth of areas of nanotubes was achieved by patterning the nickel film. CNTs were grown on the pretreated substrates at 30% $C_2H_2:NH_3$ flow ratios for 10min. Carbon nanotubes with diameters about 20 nanometers and lengths approximately 720 nanometers were obtained. Morphologies of carbon nanotubes were observed by FE-SEM and TEM.

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Growth of Carbon Nanotubes on Different Catalytic Substrates (촉매금속(Ni-Cu)의 적층 증착법에 의한 탄소나노튜브의 성장)

  • 배성규;이세종;조성진;이득용
    • Journal of the Korean Ceramic Society
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    • v.41 no.3
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    • pp.247-252
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    • 2004
  • 노튜브의 길이는 급격히 증가하였지만 촉매금속의 적층방법에 따른 탄소나노튜브의 성장 형태는 큰 차이가 없었다. 특히, ICBD 방법에 의해 Ni 촉매금속을 증착한 경우 다른 방법에 비하여 직선적인 탄소나노튜브가 관찰되었다. ^x Carbon nanotubes were grown on SiO$_2$/Si substrates by applying $C_2$H$_2$ gas through chemical vapor deposition process. It was found that carbon nanotubes were grown successfully on the substrates with catalytic films under 20 $\AA$ total thickness. The increase in reaction temperature from 50$0^{\circ}C$ to 80$0^{\circ}C$ resulted in longer carbon nanotube, but there was no clear tendencies with different types of catalytic layers. It was evident that carbon nanotubes became more straight on the substrate with Ni catalytic film produced by ICBD method.

Growth of vertically aligned carbon nanotubes on a large area Si substrates by thermal chemical vapor deposition

  • Lee, Cheol-Jin;Park, Jung-Hoon;Son, Kwon-Hee;Kim, Dae-Woon;Lyu, Seung-Chul;Park, Sung-Hoon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.212-212
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    • 2000
  • Since the first obserbvation of carbon nanotubes, extensive researches have been done for the synthesis using arc discharge, laser vaporization, and plasma-enhanced chemical vapor deposition. Carbon nanotubes have unique physical and chemical properties and can allow nanoscale devices. Vertically aligned carbon nanotubes with high quality on a large area is particularly important to enable both fundamental studies and applications, such as flat panel displays and vacuum microelectronics. we have grown vertically aligned carbon nanotubes on a large area of Si substrates by thermal chemical vapor deposition using C2H2 gas at 750-950$^{\circ}C$. we deposited catalytic metal on Si susbstrate using thermal evaporation. The nanotubes reveal highly purified surface. The carbon nanotubes have multi-wall structure with a hollow inside and it reveals bamboo structure agreed with base growth model. Figure 1 shows SEM micrograph showing vertically aligned carbon nanotubes whih were grown at 950$^{\circ}C$ on a large area (20mm${\times}$30mm) of Si substrates. Figure 2 shows TEM analysis was performed on the carbon nanotubes grown at 950$^{\circ}C$ for 10 min. The carbon nanotubes are multi-wall structure with bamboo shape and the lack of fringes inside the nanotube indicates that the core of the structure is hollow. In our experiment, carbon nanotubes grown by the thermal CVD indicate base growth model.

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Synthesis of well-aligned thin multiwalled carbon nanotubes on the silicon substrate and their field emission properties

  • Yuan, Huajun;Shin, Dong-Hoon;Kim, Bawl;Lee, Cheol-Jin
    • Carbon letters
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    • v.12 no.4
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    • pp.218-222
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    • 2011
  • Well-aligned multi-walled carbon nanotubes (MWCNTs) were successfully synthesized by catalytic chemical vapor deposition using a hydrogen sulfide ($H_2S$) additive onto Al/Fe thin film deposited on Si wafers. Transmission electron microscopy images indicated that the as-grown carbon products were thin MWCNTs with small outer diameters of less than 10 nm. $H_2S$ plays a key role in synthesizing thin MWCNTs with a large inside hollow core. The well-aligned thin MWCNTs showed a low turn-on voltage of about 1.1 V/${\mu}m$ at a current density of 0.1 ${\mu}A/cm^2$ and a high emission current of about 1.0 mA/$cm^2$ at a bias field of 2.3 V/${\mu}m$. We suggest a possible growth mechanism for the well-aligned thin MWCNTs with a large inside hollow core.

Growth of Carbon Nanotubes using Plasma-Enhanced Chemical Vapor Deposition (플라즈마 CVD 를 이용한 탄소나노튜브의 성장)

  • Bang Y.Y.;Chang W.S.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2005.06a
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    • pp.1236-1239
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    • 2005
  • Aligned carbon nanotubes(CNTs) array were synthesized using DC plasma-enhanced chemical vapor deposition. Silicon substrate Ni-coated of 5nm thickness were pretreated by $NH_3$ gas with a flow rate of 180sccm, for 10min. CNTs were grown on the pretreated substrates at $30%\;C_2H_2:NH_3$ flow ratios for 10min. Carbon nanotubes with diameters from 60 to 80 nanometers and lengths about 2.7 micrometers were obtained. Vertical alignment of carbon nanotubes were observed by FESEM.

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Electrical characteristics of 4H-SiC MIS Capacitors With Ni/CNT/SiO2 Structure (Ni/CNT/SiO2 구조의 4H-SiC MIS 캐패시터의 전기적 특성)

  • Lee, Taeseop;Koo, Sang-Mo
    • Journal of IKEEE
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    • v.18 no.4
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    • pp.620-624
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    • 2014
  • In this study, the electrical characteristics of Ni/CNT/$SiO_2$ structures were investigated in order to analyze the mechanism of carbon nanotubes in 4H-SiC MIS device structures. We fabricated 4H-SiC MIS capacitors with or without carbon nanotubes. Carbon nanotubes were dispersed by isopropyl alcohol. The capacitance-voltage (C-V) is characterized at 300 to 500K. The experimental flat-band voltage ($V_{FB}$) shift was positive. Near-interface trapped charge density and oxide trapped charge density values of Ni/CNT/$SiO_2$ structure were less than values of reference samples. With increasing temperature, the flat-band voltage was negative. It has been found that its oxide quality is related to charge carriers or defect states in the interface of 4H-SiC MIS capacitors. Gate characteristics of 4H-SiC MIS capacitors can be controlled by carbon nanotubes between Ni and $SiO_2$.

The Effect of Catalysts on the Growth Characteristic of Carbon Nanotubes

  • Lee, Tae-Young;Han, Jae-Hee;Choi, Sun-Hong;Yoo, Ji-Beom;Park, Chong-Yun;Jung, Tae-Won;Yu, Se-Gi;Yi, Whi-Kun;Kim, Jong-Min
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.666-669
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    • 2002
  • Vertically aligned carbon nanotubes (CNTs) have been produced using various type of plasma enhanced chemical vapor deposition (PECVD). Catalysts such as Ni, Co, and Fe are used for growth of CNTs. To explain the effect of catalysts on the growth characteristics of CNTs, carbon species of $C_2H_2$ was observed in different catalysts using optical emission spectroscopy (OES) with theoretical calculation on the surface reaction in different catalysts.

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Electrochemical Sensing of Hydrogen Peroxide Using Prussian Blue@poly(p-phenylenediamine) Coated Multi-walled Carbon Nanotubes

  • Young-Eun Jeon;Wonhyeong Jang;Gyeong-Geon Lee;Hun-Gi Hong
    • Journal of the Korean Chemical Society
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    • v.67 no.5
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    • pp.339-347
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    • 2023
  • In this study, a nanocomposite of multi-walled carbon nanotubes@poly(p-phenylenediamine)-Prussian blue (MWCNTs@PpPD-PB) was synthesized and employed for the electrochemical detection of hydrogen peroxide (H2O2). A straightforward approach was utilized to prepare an electrochemical H2O2 sensor using a MWCNTs@PpPD-PB modified glassy carbon electrode, and its electrochemical behavior was investigated through techniques such as electrochemical impedance spectroscopy, cyclic voltammetry, and amperometry. The modified electrode displayed a favorable electrocatalytic response towards the reduction of H2O2 in an acidic solution. The developed sensor exhibited linearity in the concentration range of 0.005 mM to 2.225 mM for H2O2, with high sensitivity (583.6 ㎂ mM-1cm-2) and a low detection limit (0.95 ㎛, S/N = 3) at an applied potential of +0.15 V (vs. Ag/AgCl). Additionally, the sensor demonstrated excellent selectivity, reproducibility, and stability. Moreover, successful detection of H2O2 was achieved in real samples.

Growth of Highly Purified Carbon Nanotubes by Thermal Chemical Vapor Deposition (열화학기상증착법에 의한 고순도 탄소나노튜브의 성장)

  • Yu, Jae-Geun;Park, Jeong-Hun;Kim, Dae-Un;Lee, Cheol-Jin;Son, Gwon-Hui;Sin, Dong-Hyeok;Mun, In-Gi
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.49 no.12
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    • pp.649-653
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    • 2000
  • We have grown carbon nanotubes by thermal chemical vapor deposition of $C_{2}H_{2}$ on catalytic metal deposited on silicon oxide substrates. Highly purified carbon nanotubes are uniformly grown on a large area of the silicon oxide substrates. It is observed that surface modification of catalytic metals deposited on substrates by either etching with dipping in a HF solution and/or $NH_{3}$ pretreatment is a crucial step for the nanotube growth prior to the reaction of $C_{2}H_{2}$ gas. The diameters of carbon naotubes could be controlled by applying the different catalytic metals.

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Growth of carbon nanotubes on a large area of Si substrate by the thermal chemical vapor deposition (열화학기상증착법에 의한 대면적 실리콘 기판위에서의 탄소나노튜브 성장)

  • 김대운;이철진;이태재;박정훈;손권희;강현근;송홍기;최영철;박영수
    • Proceedings of the IEEK Conference
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    • 1999.06a
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    • pp.954-957
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    • 1999
  • We have synthesized carbon nanotubes by thermal chemical vapor deposition of $C_2$H$_2$ on transition metal-coated silicon substrates. Carbon nanotubes are uniformly synthesized on a large area of the plain Si substrates, different from previously reported porous Si substrates. It is observed that surface modification of transition metals deposited on substrates by either etching with dipping in a HF solution and/or NH$_3$ pretreatment is a crucial step for the nanotube growth prior to the reaction of $C_2$H$_2$gas. We will demonstrate that the diameters of carbon naotubes can be controlled by applying the different transition metals.

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