• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2002년도 춘계종합학술대회
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• pp.627-630
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• 2002

Bi$_2$Sr$_2$CuOx(Bi-2201) thin films were fabricated by atomic layer-by-layer deposition using an ion bean sputtering method. 10 wt% and 90 wt% ozone mired with oxygen were used with ultraviolet light irradiation to assist oxidation. XRD and RHEED investigations revealed that a buffer layer is formed at the early stage of deposition (less than 10 unit cell), and then c-axis oriented Bi-2201 grows on top of it.

• 조명전기설비학회논문지
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• 제20권4호
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• pp.7-11
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• 2006

본 논문에서는 $Mo/SiO_2/Si(100)$ 기판 위에 MOCVD(Metal-Organic-Chemical-Vapor Deposition)법을 이용하여 C축 방향으로 성장시킨 AIN(Aluminum Nitride) 박막을 이용하여 GHz대역 무선 통신에서 사용할 수 있는 FBAR(Film-Bulk-Acoustic Resonator)을 제작하였다. 제작된 공진부의 공진주파수와 반공진주파수는 각각 3.189[GHz]와 3.224[GHz]으로 측정되었으며, Q값(Quality Factor)과 유효한 전기기계 결합계수(${k_{eff}}^2$)는 각각 24.7과 2.65[%]로 평가되었다. AIN의 증착(Deposition) 조건은 $950[^{\circ}C]$의 기판표면(Substrate) 온도, 20Torr의 압력, 25000의 N/Al의 V/III비로 증착하였다. $4{\times}10^{-5}[\Omega{cm}]$의 Mo 하부전극 고유저항과 $Mo/SiO_2/Si(100)$ 기판 위에 AIN(0002) FWHM(Full-Width at Half-Maximum) 4를 갖는 C축 방향성의 AIN 박막을 성공적으로 성장시켰다. 따라서 증착된 AIN박막의 FWHM값은 GHz대역 무선 통신용 RF(Radio Frequency) 밴드 패스 필터 설계에 유용하게 사용될 것이다.

• 한국자기학회지
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• 제12권2호
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• pp.41-45
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• 2002

졸-겔법으로 제조된 La/sub 0.7/Pb/sub 0.3/MnO₃(LPM)박막의 기판 효과에 따른 저 자장 영역에서의 터널형 자기저항 효과에 대하여 연구하였다. 다결정 LPMO 박막은 SiO₂/Si(100) 기판과 그 위에 확산 방지막(diffusion barrier)으로 안정화 지르코니아(yttria-stabilized zirconia, YSZ) 중간층을 도입한 기판에 증착하였으며, 반면에 c-축 방향 성장을 갖는 박막의 경우 LaA1O₃(001) (LAO) 단결정 기판을 사용하였다. LPMO/LAO 박막에서의 rocking curve 측정 결과 full width half maximum (FWHM) 값은 0.32°값을 가짐을 알 수 있었다. 상온(300 K)에서 측정한 자기저항비(MR ratio) 값은 500 Oe리 외부자장을 인가시 LPMO/SiO₂/Si 박막의 경우 0.52%, LPMO/YSZ/SiO₂/Si 박막인 경우는 0.68% 그리고, LPMO/LAO의 경우에는 0.4%에도 미치지 못하는 값을 가졌다. 이때 MR최대값을 나타내는 peaks는 자기이력 곡선의 보자력 부근에서 나타남으로 그 두 결과가 잘 일치함을 보여 주고 있다. 이러한 저 자장 영역에서의 자기저항 값의 타이는 박막 시료의 기판 효과에 의한 grain boundary특성의 차이로부터 기인된다.

• 한국세라믹학회지
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• 제42권7호
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• pp.475-482
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• 2005

Zn$_{l-x}$Co$_{x}$O (x = 0.05 - 0.20) films were grown on Coming 7059 glass by sol-gel process. A homogeneous and stable Zn$_{l-x}$Co$_{x}$O sol was prepared by dissolving zinc acetate dihydrate (Zn(CH$_{3}$COO)$_{2}$$\cdot$2H$_{2}$O), cobalt acetate tetrahydrate ((CH$_{3}$)$_{2}$$\cdot$CHOH) and aluminium chloride hexahydrate (AlCl$_{3}$ $\cdot$ 6H$_{2}$O) as solute in solution of isopropanol ((CH$_{3}$)$_{2}$$\cdot$CHOH) and monoethanolamine (MEA:H$_{2}$NCH$_{2}$CH$_{2}$OH). The films grown by spin coating method were postheated in air at 650°C for 1 h and annealed in the condition of vacuum (5 $\times$ 10$^{-6}$ Torr) at 300$^{\circ}C$ for 30 min and investigated the nature of c-axis preferred orientation and physical properties with different Co concentrations. Znl_xCOxO thin films with different Co concentrations were well oriented along the c-axis, but especially a highly c-axis oriented Zn$_{l-x}$Co$_{x}$O thin film was grown at 10 at$\%$ Co concentration. The transmittance spectra showed that Zn$_{l-x}$Co$_{x}$O thin films occur typical d-d transitions and sp-d exchange interaction became activated with increasing Co concentration. The electrical resistivity of the films at 10 at$\%$ Co had the lowest value due to the highest c-axis orientation. X-ray photoelectron spectroscopy and alternating gradient magnetometer analyses indicated that no Co metal cluster was formed, and the ferromagnetic properties appeared, respectively. The characteristics of the electrical resistivity and room temperature ferromagnetism of Zn$_{l-x}$Co$_{x}$O thin films suggested the possibility for the application to dilute magnetic semiconductors.

• E2M - 전기 전자와 첨단 소재
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• 제10권5호
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• pp.425-433
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• 1997

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and 82$0^{\circ}C$ and the highly condensed ozone gas pressure(PO$_3$) in vacuum chamber was varied between 2.0$\times$10$^{-6}$ and 2.3$\times$10$^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and 795$^{\circ}C$ and single phase of Bi 2201 existed in the lower region than 785$^{\circ}C$. Whereas, PO$_3$dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with T$_{c}$(onset) of about 90 K and T$_{c}$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as CaCuO$_2$was observed in all of the obtained films.lms.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.1071-1074
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• 2002

This paper presents Bi thin films have been fabricated by atomic layer-by-layer deposition and co-deposition at an IBS method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure$(PO_3)$ in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}Torr$. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$: and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.278-280
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• 2001

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure($PO_3$) in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.278-280
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• 2001

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 Phase with temperature and ozone pressure, the substrate temperature was varied between 655 and 820$^{\circ}C$ and the highly condensed ozone gas pressure(PO$_3$) in vacuum chamber was varied between 2.0x10$\^$-6/ and 2.3x10$\^$-5/ Torr. Bi 2212 Phase appeared in the temperature range of 750 and 795$^{\circ}C$ and single phase of Bi 2201 existed in the lower region than 785$^{\circ}C$. Whereas, PO$_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with T$\sub$c/(onset) of about 70 K and T$\sub$c/(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as CaCuO$_2$ was observed in all of the obtained films.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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• pp.115-118
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• 2000

Uncooled pyroelectric infrared detectors based on BST(B $a_{-x}$S $r_{x}$Ti $O_3$) thin films have been fabricated by RF magnetron sputtering and surface Micromachining technology. The detectors form BST thin film ferroelectric capacitors grown by RF magnetron sputtering on N/O/N(S $i_3$ $N_4$/ $SiO_2$/S $i_3$ $N_4$) membrane. The sputtered BST thin film exhibits highly c-axis oriented crystal structure that no poling treatment for sensing applications is required. This is an essential factor to increase the yield for realization of an infrared image sensor. surface-Micromachining technology is used to lower the thermal mass of the detector by giving maximum sensor efficiency Gold-black is evaporated on top of the sensing elements used the thermal evaporator. fabricated uncooled pyroelectric infrared detectors is highly output voltage at the low temperature(1$^{\circ}C$).).).

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.27.1-27.1
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• 2009

In recent years, ZnO nanostructures have drawn considerable attentions for the development of futuristic electronic devices due to their superior structural and optical properties. As the growth of ZnO nanowires by MOCVD is a bottom-up technique, the nature of substrates has a vital role for the dimension and alignment of the nanowires. However, in the pursuit of next generation ZnO based nanodevices, it would be highly preferred if well-ordered ZnO nanowires could be obtained on various substrates like sapphire, silicon, glass etc. Vertically aligned nanowires were grown on A and C-plane sapphire substrates, where as nanopencils were obtained on R-plane sapphire substrates. In addition, C-axis oriented vertical nanowires were also found using an interfacial layer(aluminum nitride film) on silicon substrates. On the other hand, long nanowires were found on Ga-doped ZnO film on glass substrates. Structural and optical properties of the ZnO nanowires on various substrates were also investigated.