• Journal of information and communication convergence engineering
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• 제7권4호
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• pp.530-534
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• 2009

C-axis-oriented ZnO thin films were successfully deposited on p-Si (100) in an RF magnetron sputtering system. Deposition conditions such as deposition power, working pressure, and oxygen gas ratio $O_2/(O_2+Ar)$ were varied. Crystalline structures of the deposited ZnO films were investigated by a scanning electron microscope (SEM) technique. Results show that the deposition parameters can have a strong impact on the preferred orientations and grain sizes of the deposited ZnO films.

• 한국전기전자재료학회논문지
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• 제17권3호
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• pp.329-332
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• 2004

ZnO thin films were grown with different plume-substrate angles by pulsed laser deposition (PLD) to control the amount of ablated species arriving on a substrate per laser shot. The angles between plume propagation direction and substrate plane (P-S angle) were 0$^{\circ}$, 45$^{\circ}$ and 90$^{\circ}$. The growth time was changed in order to adjust film thickness. From the XRD pattern exhibiting a dominant (002) and a minor (101) XRD peak of ZnO, all films were found to be well oriented along c-axis. From the AFM image, it was found that the grain size of ZnO thin film was increased, as P-S angle decreased. UV intensity investigated by PL (Photoluminescence) increased as P-S angle decreased.

• Transactions on Electrical and Electronic Materials
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• 제6권4호
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• pp.186-189
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• 2005

We have fabricated superconducting HTSC ceramic thick films by chemical process. c-axis oriented HTSC thick films have been attempted bi-axially textured Ni tapes. The x-ray diffraction pattern of the HTSC thick films contained superconducting phase crystal. The critical temperature and critical current density was 110K.

• 센서학회지
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• 제4권2호
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• pp.45-50
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• 1995

The excellent c-axis oriented zinc oxide thin films were prepared by the RF magnetron sputtering method on glass substrates. Optimum fabrication conditions of the ZnO films were such that RF power, substrate temperature, and gas pressure of mixture Ar(50%):$O_{2}$(50%) were 150 W, $200^{\circ}C$, and 5 mTorr, respectively. In these conditions, the deposition rate was $310\;{\AA}/min$, and the resistivity of the film was $1{\times}10^6\;{\Omega}{\cdot}cm$. The ZnO film also showed high c-axis orientation and crystalinity according to XRD pattern and SEM photograph. A fabricated interdigital transducer generated 1st mode surface acoustic wave at 46.6 MHz and 2nd mode surface acoustic wave at 52.5 MHz. At the 1st mode, the phase velocity of surface acoustic wave and the electromechanical coupling coefficient were 2795 m/sec and 0.031 %, respectivly. At the 2nd mode, they were 3149 m/sec and 0.019 %. respectivly.

• Progress in Superconductivity
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• 제12권1호
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• pp.68-73
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• 2010

Y123 films have been deposited on $LaAlO_3$ (100) single-crystal and IBAD substrates by spray pyrolysis method using nitrate precursors. Ultrasonic atomization was adopted to decrease the droplet size, spraying angle and its moving velocity toward substrate for introducing the preheating tube furnace in appropriate location. A small preheating tube furnace was installed between spraying nozzle and substrate for fast drying and enhanced decomposition of precursors. C-axis oriented films were obtained on both LAO and IBAD substrates at deposition temperature of around $710{\sim}750^{\circ}C$ and working pressures of 10~15 torr. Thick c-axis epitaxial film with the thickness of $0.3{\sim}0.6\;{\mu}m$ was obtained on LAO single-crystal by 10 min deposition. But the XRD results of the film deposited on IBAD template at same deposition condition showed that the buffer layers of the IBAD metal substrate was affected by long residence of metal substrate at high temperature for YBCO deposition.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2007년도 춘계학술발표회 초록집
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• pp.147-148
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• 2007

In this study, the technology to grow oriented nanotube thin film from dip-coated $TiO_2$ using hydrothermal method has been successfully developed. The effects of preparation parameters, such as reaction temperature, duration and post treatment conditions on the film morphologies and the adherence to the substrate, have been examined. A general formation mechanism of oriented titanate nanotube thin film is proposed in terms of the detailed observation of the products via two dimensional surface FESEM studies and HRTEM images. The overall formation of $TiO_2-based$ nanotube thin film can be summarized with three successive steps: (1) $TiO_2$ dissolving and amorphous $Na_2TiO_3$ deposition process; (2) layered $Na_2Ti_3O_7$ formation via spontaneous crystallization and rapid growth process; (3) formation of nanotube thin film via $Na_2Ti_3O_7$ splitting and multilayer scrolling process of (100) planes around the c axis of $Na_2Ti_3O_7$.

• 한국콘텐츠학회:학술대회논문집
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• 한국콘텐츠학회 2007년도 추계 종합학술대회 논문집
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• pp.804-806
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• 2007

ZnO박막을 c-축 방향으로 실리콘(Si 100)기판 위에 rf 마그네트론 스퍼터링 법으로 증착 하였고, 증착변수가 박막의 결정학적, 전기적 특성에 미치는 영향을 연구하였다. 기판온도 $200^{\circ}C$, rf전력이 150W, 산소:아르곤 가스의 비율이 50%:50%, 그리고 증착압력이 10mTorr의 조건에서 증착된 박막이 강한 c-축 성장과 우수한 결정성을 나타내었다. 증착변수의 변화에 의한 ZnO 박막의 전기비저항은 크게 영향을 받고 있었는데, 산소비율이 증가할수록, 기판온도가 감소할수록, 비저항이 증가하였다.

• 한국세라믹학회지
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• 제38권8호
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• pp.761-764
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• 2001

새로운 AlN 박막 제조용 단일 전구체로 AlCl$_3$: $^{t}$ BuNH$_2$을 합성하였다. c축으로 배향된 AlN 박막을 80$0^{\circ}C$에서 사파이어(0006) 단결정 위에 MOCVD 공정으로 증착시켰다. 본 전구체를 사용함으로 박막내의 잔류탄소 및 산소의 오염을 크게 낮출수 있었으며 Al:N의 비율이 1:1인 화학량론비의 AlN 박막을 제조할 수 있었다. 단일 전구체의 결정 구조는 단결정 X선 구조분석과 원소분석을 통하여 규명하였으며 박막분석은 SEM, XRD, SEM, AFM과 RBS 등으로 행하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.9-13
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• 1995

In this paper, Zinc Oxide films, with a high degree of c-axis orientation, have been grown on glass substrates by a rf magnetron sputtering. The maximum crystal orientation was found to occur with substrate temperature 150$^{\circ}C$, input power 190W, oxygen rate 50%, target-substrate distance 55mm. It is proposed to achieve high-resistivity ZnO films by increasing the annealing temperature. The piezoelectric layers, preferred oriented with (002) perpendicular to the layer with 4.9$^{\circ}$, could be obtained by the annealing temperature 300$^{\circ}C$ in oxygen atmosphere. It is indicated that the relative permittivity is range from 8.9 to 9.8 in the frequency ranging from 10KHz to 5MHz.

• Progress in Superconductivity
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• 제13권2호
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• pp.127-132
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• 2011

Many research groups have been manufacturing coated conductor by various processes such as PLD, MOD, and MOCVD, but the methods with production cost suitable for wide and massive application of coated conductor did not develop yet. Spray pyrolysis method adopting ultrasonic atomization was tried as one of the possible option. GdBCO precursor films have been deposited on IBAD substrate by spray pyrolysis method at low temperature and converted to GdBCO by post heat treatment. Ultrasonic atomization was used to generate fine droplets from precursor solution of Gd, Ba, and Cu nitrate dissolved in water. Primary GdBCO films were deposited at $500^{\circ}C$ and oxygen partial pressure of 1 torr. After that, the films were converted at various temperatures and low oxygen partial pressures. C-Axis oriented films were obtained IBAD substrates at conversion temperature of around $870^{\circ}C$ and oxygen partial pressures of 500 mtorr ~ 1 torr in a vacuum. Thick c-axis epitaxial film with the thickness of 0.4 ~ 0.5 ${\mu}m$ was obtained on IBAD substrate. C-axis epitaxial GdBCO films were successfully prepared by ex-situ methods using nitrate precursors on IBAD metal substrate. Converted GdBCO films have very dense microstructures with good grain connectivity. EDS composition analysis of the film showed a number of Cu-rich phase in surface. The precursor solution having high copper concent with the composition of Gd : Ba : Cu = 1 : 2 : 4 showed the better grain connectivity and electrical conductivity.