• 한국세라믹학회지
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• 제51권5호
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• pp.498-504
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• 2014

Particulate nitride composites have been fabricated by sintering the compacted powder of AlN and 5 - 64.3 mol% $Al_2O_3$, with a small addition of $Y_2O_3$ ($Y_2O_3$/AlN, 1 wt%), in 1-atm nitrogen gas at $1650-1900^{\circ}C$. The composites were characterized in terms of sintering behavior, phase relations, microstructure and thermal shock resistance. AlN, 27R AlN pseudopolytype, and alminium oxynitride (AlON, $5AlN{\cdot}9Al_2O_3$) were found to existin the sintered material. Regardless of batch composition, the AlN-$Al_2O_3$ powder compacts exhibited similar sintering behavior; however, the degree of shrinkage commonly increased with increasing $Al_2O_3$ content, consequently giving high sintered bulk density. By increasing the $Al_2O_3$ addition up to ${\geq}50 mol%$, the matrix phase in the sintered material was converted from AlN or 27R to AlON. Above $1850^{\circ}C$, a liquid phase was formed by the reaction of $Al_2O_3$ with AlN, aided by $Y_2O_3$ and mainly existed at the grain boundaries of AlON. Thermal shock resistance was superior in the sintered composite consisting of AlON with dispersed AlN or AlN matrix phase.

• 한국전기전자재료학회논문지
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• 제26권10호
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• pp.754-759
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• 2013

Aluminum oxide($Al_2O_3$) film deposited by atomic layer deposition (ALD) is known to supply excellent surface passivation properties on crystalline Si surfaces. Since $Al_2O_3$ has fixed negative charge, it forms effective surface passivation by field effect passivation on the rear side in p-type silicon solar cell. However, $Al_2O_3$ layer formed by ALD process needs very long process time, which is not applicable in mass production of silicon solar cells. In this paper, plasma-assisted ALD(PA-ALD) was applied to form $Al_2O_3$ to reduce the process time. $Al_2O_3$ synthesized by ALD on c-Si (100) wafers contains a very thin interfacial $SiO_2$ layer, which was confirmed by FTIR and TEM. To improve passivation quality of $Al_2O_3$ layer, the deposition temperature was changed in range of $150{\sim}350^{\circ}C$, then the annealing temperature and time were varied. As a result, the silicon wafer with aluminum oxide film formed in $250^{\circ}C$, $400^{\circ}C$ and 10 min for the deposition temperature, the annealing temperature and time, respectively, showed the best lifetime of 1.6ms. We also observed blistering with nanometer size during firing of $Al_2O_3$ deposited on p-type silicon.

• 동력기계공학회지
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• 제15권6호
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• pp.67-72
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• 2011

In the present study, crack healing effect and residual stress of $Al_2O_3$ ceramics were investigated by changing the sintering temperature and heat treatment conditions. And also it was investigated that the influence of different filler loadings of nano-sized SiC particles on the crack healing behavior of $Al_2O_3$ ceramics. The test samples were characterized by three point bend flexural tests to evaluate their mechanical properties. The morphological changes were studied by FE-SEM and EDS. The test results indicated that the $Al_2O_3$ with nano-sized SiC ceramics sintered at $1800^{\circ}C$ were showed highest density. Sintering temperature at $1800^{\circ}C$, the bending strength of heat treatment in air atmosphere specimens showed about 42 % increment in comparison to the un-heat treated specimens. The cracked specimens can be healed by heat treatment in vacuum atmosphere but the crack healing effect of $Al_2O_3$ ceramics, which is heat treated in air atmosphere was higher than that of heat treated in vacuum atmosphere. $Al_2O_3$ with 30 wt% of SiC ceramics indicated higher crack healing ability than that with 15 wt% of SiC ceramics. The FE-SEM images showed that the median cracks and pores were disappeared after heat treatment in air.

• 한국세라믹학회지
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• 제35권7호
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• pp.721-725
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• 1998

본 연구에서는 Boron과 Carbon black이 소결조재로 첨가된 탄화규소 분말을 $1950^{\circ}C$에서 상압소결 방법으로 시편을 제조하고 꺽임강도, 파괴인성, 비마모량을 측정하고 파단면 및 마찰마모면의 미세구조를 SEM으로 관찰하여 마찰마모특성과 미세구조와의 관계를 규명하였다. 또한 마모상대재료로서 SiC pin과 $Al_{2}O_{3}$ pin을 사용하였을때 마찰마모특성과 미세구조와의 관계도 비교 검토하였으며 다음과 같은 결론을 얻었다. 1. SiC pin을 사용한 경우 소결시편의 비마모량은 $Al_{2}O_{3}$ pin을 사용한 경우보다 많았으나, 가압하중이 증가하면 $Al_{2}O_{3}$ pin을 사용한 경우가 SiC pin을 사용한 경우보다 비마모량의 증가율이 6.5배로 되었다. 2. Pin의 비마모량은 SiC pin의 경우가 $Al_{2}O_{3}$의 경우보다 많았으나 가압하중이 증가하면 $Al_{2}O_{3}$ pin의 경우가 SiC pin의 경우보다 비마모향의 증가율이 약4배로 되었다. 3. 마모상대재료의 마찰계수가 작은 경우에는 마모면의 미세구조가 평활하면서 crack이 나타나지 않았으나, 마찰계수가 큰 경우에는 마모면이 평활치 못하고 crack의 전파현상이 크게 나타났다. 4. 사용된 Pin의 마찰계수가 큰 경우에는 고상소결한 SiC 시편도 액상소결한 시편과 마찰마모 특성이 유사하였다.

• 한국산학기술학회논문지
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• 제14권10호
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• pp.4672-4678
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• 2013

알루미늄 금속이 용해될 시 대기와 접촉한 용탕 표면에서 생성되는 알루미늄 드로스는 알루미늄 생산 공정에서 발생되는 필수적인 부산물이다. 그러나 알루미늄 드로스의 대부분은 매립에 의한 처리가 이루어지고 있어 환경오염의 원인이 되고 있다. 본 연구에서는 알루미늄 드로스를 재자원화 하여 SCR(Selective Catalytic Reduction) 촉매의 담체에 일부 대체하는 연구를 진행하였다. 재활용 된 알루미늄 드로스를 촉매 원료 $WO_3$, $V_2O_5$, $TiO_2$와 혼합하여 $V_2O_5-WO_3/TiO_2-Al_2O_3$ SCR촉매를 제조하였다. 제조 된 $V_2O_5-WO_3/TiO_2-Al_2O_3$ SCR촉매는 XRD, XRF, BET 분석을 통해 특성평가를 진행 하였으며, 내구성 평가를 통해 $Al_2O_3$ 함량이 증가할수록 V$V_2O_5-WO_3/TiO_2-Al_2O_3$ SCR촉매의 강도가 증가하는 것을 확인 할 수 있었다. MR(Micro-Reactor)을 이용한 촉매 활성평가를 진행하여 촉매의 실사용 온도 $350^{\circ}C{\sim}400^{\circ}C$에서 90%이상의 촉매효율을 나타내었다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2016년도 추계학술대회 논문집
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• pp.107-107
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• 2016

TiCrAlSiN films were developed in order to improve the high-temperature oxidation resistance, corrosion resistance, and mechanical properties of conventional TiN films that are widely used as hard films to protect and increase the lifetime and performance of cutting tools or die molds. In this study, a nano-multilayered TiAlCrSiN film was deposited by cathodic arc plasma deposition. It displayed relatively good oxidation resistance at $700-900^{\circ}C$, owing to the formation protective oxides of $Al_2O_3$, $Cr_2O_3$, and $SiO_2$, and semiprotective $TiO_2$. At $1000^{\circ}C$, the increased temperature led to the formation of the imperfect oxide scale that consisted primarily of the outer ($TiO_2$,$Al_2O_3$)-mixed scale and inner ($TiO_2$, $Al_2O_3$, $Cr_2O_3$)-mixed scale.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권11호
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• pp.544-549
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• 2001

The mechanical and electrical properties of the hot-pressed and pressureless annealed SiC-39vo1.%TiB$_2$electroconductive ceramic composites were investigated as functions of the liquid additives of $Al_2O_3+Y_2O_3$ and the sintering temperature. The result of phase analysis for the SiC-39vo1.%TiB$_2$ composites by XRD revealed $\alpha -SiC(6H),\; TiB_2,\; and YAG(Al_5Y_3O_{12})$ crystal phase. The relative density of SiC-39vo1.% $TiB_2$ composites was increased with increased $Al_2O_3+Y_2O_3$ contents. The fracture toughness showed the highest value of $7.8 MPa.m_{1/2}$ for composites added with 12 wt% $Al_2O_3+Y_2O_3$additives at $1750^{\circk}C$. The electrical resistivity of the SiC-39vo1.%$TiB_2$composites was all positive temperature coefficient resistance(PTCR) in the temperature range of $25S^{\circ}C \;to\; 700^{\circ}C$.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권2호
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• pp.92-97
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• 2000

The mechanical and electrical properties of the hot-pressed and annealed $\beta$-SiC+39vol. %ZrB2 electroconductive ceramic composites were investigated by adding 1, 2, 3wt% Al2O3+Y2O3(6:4wt%) of the liquid forming additives. In this microstructures, no reactions were observed between $\beta-SiC$ and ZrB2. The relative density is over 90.8% of the theoretical density and the porosity decreased with increasing Al2O3+Y2O3 contents. Phase analysis of the composites by XRD revealed $\alpha-SiC(6H, 4H)$, ZrB2 and $\beta-SiC$(15R). Flexural srength showed the highest of 315.5MPa for composites added with 3wt% Al2O3+Y2O3 additives as room temperature. Owing to crack deflection and crack bridging of fracture toughness mechanism, the fracture toughness showed 5.5MPa.m1/2 and 5.3MPa.m1/2 for composites added with 2wt% and 3wt% Al2O3+Y2O3 additives respectively at room temperature. The area fraction of the elongated SiC grain in the etched surface of sample showed 65% and 65.1% for composite added with 2wt% and 3wt% Al2O3+Y2O3 additives respectively. The electrical resistivity at room temperature. The electrical resistivity of the composites wall all positive temperature coefficient(PTCR) against temperature up to $700^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.265-265
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• 2007

In the present work, we have studied low temperature sintering and microwave dielectric properties of $ZnAl_2O_4$-zinc borosilicate (ZBS, 65ZnO-$25B_2O_3-10SiO_2$) glass composites. The focus of this paper was on the improvement of sinterability, low dielectric constant, and on the theoretical proof regarding of microwave dielectric properties in $ZnAl_2O_4$-ZBS glass composites, respectively. The $ZnAl_2O_4$ with 60 vo1% ZBS glass ensured successful sintering below $900^{\circ}C$. It is considered that the non-reactive liquid phase sintering (NPLS) occurred. In addition, $ZnAl_2O_4$ was observed in the $ZnAl_2O_4$-(x)ZBS composites, indicating that there were no reactions between $ZnAl_2O_4$ and ZBS glass. $ZnB_2O_4\;and\;Zn_2SiO_4$ with the willemite structure as the secondary phase was observed in the all $ZnAl_2O_4$-(x)ZBScomposites. In terms of dielectric properties, the application of the $ZnAl_2O_4$-(x)ZBS composites sintered at $900^{\circ}C$ to LTCC substrate were shown to be appropriate; $ZnAl_2O_4$-60ZBS (${\varepsilon}_r$= 6.7, $Q{\times}f$ value= 13,000 GHz, ${\tau}_f$= -30 ppm/$^{\circ}C$). Also, in this work was possible theoretical proof regarding of microwave dielectric properties in $ZnAl_2O_4$-(x)ZBS composites.

• The Korean Journal of Ceramics
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• 제1권3호
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• pp.137-142
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• 1995

Monodispersed $Al_2O_3-TiO_2$ Powder was prepared by metal-alkoxide hydrolsis. A homogeneous nucleation/growth occurred in the solutions containing ethanol, butanol and acetonitrile, and resulted in spherical, submicrometer-sized powder. The titania and the alumina crystals were formed at $800^{\circ}C$ and $1000^{\circ}C$, respectively. These crystala were subsequently reacted each other beyond $1320^{\circ}C$ and formed $Al_2TiO_5$. The relative densities of sintered bodies prepared with as-received powder were examined at the temperature range of 1300-$1500^{\circ}C$ and they were about 79% at $1300^{\circ}C$. The formation of aluminum titanata decreased the relative density at the temperature range of 1300-$1450^{\circ}C$, and at above $1450^{\circ}C$, the relative density started to increase again. It was observed that $\alpha-Al_2O_3$-doped aluminum titanate was more stable than pure aluminum titante at $1200^{\circ}C$.