• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2000.10a
• /
• pp.101-104
• /
• 2000

Milli-structure components are classified as component group whose size is between macro and micro scale. that is, about less than 20mm and larger than 1mm. The forming of these components has a typical phenomenon of bulk deformation with thin sheets because of the forming size. In order to conventional metal forming, where numerical process simulation is already idly applied, the micro-forming process is characterized by some scale effects which have to be considered in an advanced process simulation. milli-structure rectangular cup drawing is analyzed and designed using the finite element method and experiment. The result of the finite element analysis is confirmed by a series of experiment.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.10 no.5
• /
• pp.58-64
• /
• 2011

In this paper, research on the manufacturing technology of hexagonal structure core is investigated. Also the optimal forming process of the honeycomb core is developed and the rolling process is analyzed using finite element code, $DEFORM^{TM}$-3D. The standard honeycomb has a uniform hexagonal structure defined by the material, cell size, cell wall thickness and bulk density. Honeycomb core products can be made from any thin, flat material. The most common cell configuration is the hexagon but there are many other shapes for special applications. Because of the precision shape and the thin thickness, the honeycomb core is not easy to manufacture in the metal forming process. Through this study it was confirmed that after the rolling process, the section of honeycomb close to the standard shape can be obtained. This result is reflected to the manufacturing process design for the honeycomb core.

• Proceedings of the KSME Conference
• /
• 2000.11a
• /
• pp.754-758
• /
• 2000

Milli-structure components are classified as component group whose size is between macro and micro scale. that is, about less than 20mm and larger than 1mm. The forming of these components has a typical phenomenon of bulk deformation with thin sheets because of the forming size. In order to conventional metal forming, where numerical process simulation is already fully applied, the micro-forming process is characterized by some scale effects which have to be considered in an advanced process simulation. milli-structure rectangular cup drawing is analyzed and designed using the finite element method and experiment. The result of the finite element analysis is confirmed by a series of experiments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1994.11a
• /
• pp.86-89
• /
• 1994

This paper describes the fabrication and basic characteristics of a Si Hall device fabricated on a SOI(Si-on-insulator) structure. In which SOI structure was formed by SOB(Si-wafer direct bonding) technology and the insulator of the SOI structure was used as the dielectrical isolation layer of a Hall device. The Hall voltage and sensitivity of the implemented SDB SOI Hall devices showed good linearity with respectivity to the applied magnetic flux density and supple iud current. The product sensitivity of the SDB SOI Hall device was average 670 V/A$.$T and its value has been increased up to 3 times compared to that of bulk Si with buried layer of 10$\mu\textrm{m}$. Moreover, this device can be used at high-temperature, high-radiation and in corrosive environments.

• Electrical & Electronic Materials
• /
• v.8 no.2
• /
• pp.165-170
• /
• 1995

This paper describes the fabrication and characteristics of a Si Hall sensor fabricated on a SOI (Si-on-insulator) structure. The SOI structure was formed by SDB(Si-wafer direct bonding) technology and the insulator of the SOI structure was used as the dielectrical isolation layer of a Hall sensor. The Hall voltage and sensitivity of the implemented SDB SOI Hall sensors showed good linearity with respect to the applied magnetic flux density and supplied current. The product sensitivity of the SDB SOI Hall sensor was average 600V/A.T and its value has been increased up to 3 times compared to that of bulk Si with buried layer of 10.mu.m. Moreover, this sensor can be used at high-temperature, high-radiation and in corrosive environments.

• Proceedings of the KSR Conference
• /
• 2004.10a
• /
• pp.940-956
• /
• 2004

In the course of studying the design of securing the 100-year-long durability of 100 years the subway structure according to the requested service by the Seoul Metropolitan Subway Construction Headquarters, we analyzed 14 construction sites adopting the durability design in subway line No. 9 and concluded as follows: 1. When comparing with 158, the environment index presented for securing 100-year-long durability of subway structure in subway line No. 9, the index of durability was verified as 159.7$\~$179.8 2. When examining the increase value of durability index, we verified that the constructors didn't make various choices in method but they employed the uniformly selected system. 3. Under consideration of the bid form, the construction under bid contract in bulk gave the impacts on the construction cost with attention to selection of the durability index, while the construction under alternative contract in bid adopted uniformly the standard presented by the ordering party.

• ETRI Journal
• /
• v.13 no.4
• /
• pp.25-34
• /
• 1991

The stability and the electronic structure of $In_0.5$.$Ga_0.5$P-based superlattices are examined through self-consistent ab initio pseudopotential calculations. A chalcopyrite-like structure is found to be the lowest energy state over (001) and (111) monolayer superlattices (MLS). Our calculations indicate that all the ordered structures in bulk form are unstable against phase segregation into binary constituents at T = 0 while for epitaxial growth, the chalcopyrite phase is stabilized. The fundamental band gaps of the ordered structures are found to be direct and smaller than that of disordered alloys. The lowering of the band gap is explainable by band folding and pushing effects. We find the reduction of the band gap to be largest for the (111) MLS.

• Journal of Magnetics
• /
• v.12 no.3
• /
• pp.93-96
• /
• 2007

We investigated the electronic structure and magnetic properties of zinc-blende CrP/SrBi interface by using the all-electron full-potential linearized augmented plane wave method within the generalized gradient approximation. It is found that the half-metallicity is destroyed when the two half-metals are in contact. Magnetic moments of the atoms forming the supercell differ considerably from the respective values obtained for the bulk structures of the two materials. Cr atoms being and not being in contact with Bi atoms have magnetic moment 3.43 and $2.69{\mu}_B$, respectively. Bi atoms lose their majority electrons which results in their negative polarization. Alkaline Sr atoms are very weakly negatively polarized. The spin distribution within the supercell is such that well separated regions of positive and negative polarization are seen, especially around the layer of P atoms being in contact with the layer of Sr atoms.

• Journal of the Korean Vacuum Society
• /
• v.12 no.S1
• /
• pp.104-106
• /
• 2003

In this study, the electronic structures and physical properties of Ni$_2$MnGa alloy films and their dependence on the order-disorder structural transitions were investigated. The results show that the ordered films behave nearly the same as the bulk $Ni_2$MnGa alloy, including the martensitic transformation at 200 K. Unexpectedly, the disordering in $Ni_2$MnGa alloy films does not lead to any appreciable magnetic ordering down to 4 K. An annealing of the disordered films restores the ordered structure with an almost full recovery of the magnetic and the transport properties of the ordered $Ni_2$MnGa alloy films. A possible explanation of the disappearance of magnetic moment in the disordered film is given by using the ab initio first-principles electronic-structure calculations.

• Journal of the Korean Magnetics Society
• /
• v.18 no.6
• /
• pp.206-210
• /
• 2008

According to the recent reports the bulk bcc Rh is ferromagnetic with a small difference of energy compared to paramagnetic state. In this study, the electronic structure and magnetism for bcc Rh(001) surface are investigated by means of the all-electron full potential linearized augmented plane wave method within the generalized gradient approximation. It is found that the surface ferromagnetic state is preferable over the paramagnetic one. For unrelaxed system, the magnetic moment of the surface layer, $0.48{\mu}B$, is slightly increased comparing with the bulk value, $0.41{\mu}B$ while the value of the subsurface layer, $0.23{\mu}B$, is much smaller than the bulk value. The total energy and atomic force calculations show that the surface layer is relaxed downward and the subsurface layer moves upward to reduce the layer distance between the surface and subsurface layers by 7.0 %. The relaxation effect leads to weakening the surface magnetic properties. Specifically, the value of the magnetic moment of the surface atom is decreased to $0.36{\mu}B$. Since the spin polarization of the subsurface layer is only $0.14{\mu}B$, it is concluded that the bcc Rh(001) surface is rather weakly ferromagnetic.