• Journal of Korean Vacuum Science & Technology
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• v.1 no.1
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• pp.13-18
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• 1997

The critical phenomena in nickel films have been studied by observing the resistivity behavior with temperatures near the Curie point. We observed the thickness dependence of the Curie point in nickel films, that is, the thinner the film is, the lower the Curie point is. This is as expected. Using the heat capacity data, we also found the amplitude ratios of bulk and film systems to be 1.222 and 1.197(average0, respectively. These values are cose to the theoretical prediction of 1.46 given by the Heisenberg, S=$\infty$ Model.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2002.05a
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• pp.1244-1249
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• 2002

In this study, the physical characteristics of steel-wire sound absorbing materials with different thickness and bulk density is experimentally obtained in terms of the porosity and specific flow resistivity. Based on the experimental results, the following conclusions can be made. The porosities of steel-wire sound absorbing materials are smaller than those of general absorbing materials, which are inversely proportional to the volume densities. For the porosity measurement with a good accuracy, the dynamic correction based on the system compliance should be involved in porosity measurement. In addition, the flow condition for the precise measurement of the specific flow resistivity of steel-wire sound absorbing materials should be limited in the laminar flow region.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.242-244
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• 1996

Platinum thin films were deposited on Si-wafer by DC magnetron sputtering for RTD (Resistance Thermometer Devices). We investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. The Resistivity and Sheet Resistivity were decreased with increasing the temperature of substrate and the annealing time at $1000^{\circ}C$. At substrate temperature $300^{\circ}C$, input power 7(w/$cm^2$), working vacuum 5mtorr and annealing conditions $1000^{\circ}C$, 240min we obtained $10.65{\mu}{\Omega}{\cdot}cm$, Resistivity of Pt thin film and $3000{\sim}3900ppm/^{\circ}C$, TCR(temperature coefficient of resistance) closed to the bulk value.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.2
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• pp.152-155
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• 2007

In this study, we fabricated FBAR(film bulk acoustic resonator) by using $Li_{2}CO_{3}:ZnO$ as a function of annealing temperature and concentrated on effect of frequency characteristic of FBAR. The results show that the annealing affects resistivity and crystallity. The optimum properties were observed for film annealed at $500^{\circ}C$. The resistivity was $1.5{\times}10^{11}\;{\Omega}{\cdot}cm$ and the roughness was 21.10 nm. And the return loss is improved from -24.9 at $300^{\circ}C$ to -29.8 at $500^{\circ}C$ without the resonant frequency change. We finally confirmed the improvement on the frequency characteristics of FBAR device by annealing process at the optimized condition.

• Journal of Sensor Science and Technology
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• v.18 no.3
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• pp.234-238
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• 2009

We have investigated the effects of dopant on the thermoelectric properties that $La_{(1-x)}M_xCoO_3$(M=Sr, Ca;x=0, 0.1) bulk ceramics fabricated by the conventional solid state reaction method. The Seebeck coefficient of $La_{(1-x)}M_xCoO_3$(M=Sr, Ca;x=0, 0.1) bulk ceramics was measured at wide temperature range from 300 K to 673 K. The thermoelectric properties(Seebeck coefficient and electrical resistivity) depend strongly on the kinds of dopants. Sr and Ca dopant decrease the Seebeck coefficient. Density of sintered $La_{0.9}Sr_{0.1}CoO_3$ ceramic at 1523 K was 7.12 $g/cm^2$ and Seebeck coefficient was 35 ${\mu}V/K$ at 663 K. However, the electrical resistivity of the Sr doped sample was low and stable.

• 전기의세계
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• v.26 no.5
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• pp.83-89
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• 1977

This paper described the minority carrier lifetime in Si epitaxial layer, and also the voltage (V) versus current (I) characteristics of high resistivity Si epitaxial layer0substrate junction. The measured lifetime in Si epi-layer was much shorter than in bulk, and the temperature dependence of lifetime was found to agree well with Shockley-Read model of recombination which applies to high resistivity n-type materials. The V-I curve showed; an ohmic region (I.var.V), a sublinear region (I.var.V$^{1}$2/), a space charge limited current region (I.var.V$^{2}$), and finally a negative resistance region. We investigated these phenomena by the theory of the relaxation semiconductor.

• Journal of the Korean Ceramic Society
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• v.25 no.4
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• pp.321-328
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• 1988

The sintering phenomena, electrical resistivity, dielectric and piezoelectric properties of lead titanate ceramics modified by the partial substitution of La for Pb and Mn for Ti, (Pb1-1.5xLax)(Ti1-yMny)O3 ceramics, have been investigated. In (Pb1-1.5xLax)(Ti1-yMny)O3 system, with increasing lanthanum content, the realtive bulk density increased, but the Curie point and tetragonality (c/a) decreased. The tetragonal-to-cubic phase transition boundary existed in the range of 0.20

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.889-891
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• 1998

Copper films have been deposited on glass substrate via a thermal decomposition of copper(II) formate using a focused $Ar^+$ laser emitting at 514 nm. The growth kinetics of these Cu films was investigated as a function of laser power and scan speed which varied in the range of 70-150 mW and 0.1-20 mm/s, respectively. The resistivity of the copper films was a factor of about 20 higher than· that of bulk value, but the resistivity decreased due to changes in morphology and porosity of the deposit after annealing at $300^{\circ}C$, 5 min. and was about $10{\mu}{\Omega}cm$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.224-227
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• 1996

Platinum thin films were deposited on Si-wafer by DC magnetron sputtering for RTD (Resistance Thermometer Devices). We investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. The deposition rate was increased with increasing the input power but decreased with increasing Ar gas pressure. The resistivity were decreased wish increasing the temperature of substrate and the annealing time at 1000$^{\circ}C$. At substrate temperature 300$^{\circ}C$, input power 7(w/$\textrm{cm}^2$), working vacuum 5mtorr and annealing conditions 1000$^{\circ}C$, 240 min we obtained 10.65${\mu}$Ω$.$cm, resistivity of Pt thin film closed to the bulk value.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.8
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• pp.359-364
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• 2003

Ageing characteristics of RTV coating materials by corona discharge have been studied. The hydrophobicity recovery of RTV coating materials with 300${\mu}{\textrm}{m}$ thickness was identical with a bulk silicone materials. The RTV coating materials hydrophobicity has been almost lost when its were discharged during 40 seconds by corona discharge of 10㎸, and recovered after about 45 hours. The resistivity of RTV coating materials has not been recovered after 45 hours, though after 80 hours the initiation resistivity value has been recovered up to 95%. There was no critical change of compounds(such as Si and Al) on RTV surfaces by the corona discharge treatment until 100 seconds. In the test of arc erosion, it was seen that the coating sample with silicone rubber as a base material have more longer burn-out time than other samples with FRP or glass base.